KR880001060A - 반도체 장치 제조공정 - Google Patents
반도체 장치 제조공정 Download PDFInfo
- Publication number
- KR880001060A KR880001060A KR870004798A KR870004798A KR880001060A KR 880001060 A KR880001060 A KR 880001060A KR 870004798 A KR870004798 A KR 870004798A KR 870004798 A KR870004798 A KR 870004798A KR 880001060 A KR880001060 A KR 880001060A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- device manufacturing
- manufacturing process
- indium phosphide
- atoms
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims 7
- 230000005669 field effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 claims 9
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 4
- 230000007547 defect Effects 0.000 claims 3
- 238000005468 ion implantation Methods 0.000 claims 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052717 sulfur Inorganic materials 0.000 claims 2
- 239000011593 sulfur Substances 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 239000011701 zinc Substances 0.000 claims 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 claims 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 1
- 229910052753 mercury Inorganic materials 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 239000011669 selenium Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 1
- 239000011135 tin Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따라서 제조한 공핍형, n - 채널, 금속 - 절연체 - 반도체 전계효과 트랜지스터(MISFET)의 측면도. 제2도는 본 발명에 따라서 제조한 n - 채널과, 금속 - 반도체 전계효과 트랜지스터(MESFET)의 측면도. 제3도는 본 발명에 따라서 제조한 n채널, 증가형, 금속 - 절연체 - 반도체 전계효과 트랜지스터(MISFET)의 측면도.
Claims (12)
- n형 또는 p형 인듐 인화물로 이루어지는 기판 및 반-절연 인듐 인화물로 이루어지고 상기 기판의 적어도 일부의 표면과 접촉하는 제1영역을 포함하는 장치를 제조하기 위한 공정에 있어서, 반-절연 인듐 인화물의 층은 철로 도우프 되어 있으면서 MOCVD로 증식되어 있으며, 적어도 제1영역의 일부분은 풀림에 이어서 이온 주입에 의해 캐리어가 활성화되는 것을 특징으로 하는 반도체장치 제조공정.
- 제1항에 있어서, 철의 농도는 1015및 1018atoms/cm3사이의 농도인 것을 특징으로 하는 반도체장치 제조공정.
- 제1항에 있어서, 반절연 인듐 인화물층 표면의 결함도는 5×103defects/cm2보다 적으며 양호하게는 103defects/cm2또는 100defects/cm2또는 10defects/cm|2보다 적은 것을 특징으로 하는 반도체장치 제조공정.
- 제1항에 있어서, 주입되는 이온을 실리콘, 게르마늄, 주석, 유황, 셀레늄 및 텔륨으로부터 선택된 적어도 하나의 도우너 이온, 또는 아연, 카드뮴, 수은, 베릴륨, 마그네슘 및 망간으로부터 선택된 적어도 하나의 억셉터 이온인 것을 특징으로 하는 반도체장치 제조공정.
- 제1항에 있어서, 이온 주입의 이온 에너지는 100 및 800kev 사이이며 양호하게는 300 및 500kev 사이 또는 340 및 410kev 사이인 것을 특징으로 하는 반도체장치 제조공정.
- 제1항에 있어서, 상기 풀림 작용은 일분 및 한시간 사이, 양호하게는 15 및 20분 사이의 기간동안 600내지 850℃의 온도범위에서 실행되는 것을 특징으로 하는반도체장치 제조공정.
- 제1항에 있어서, 상기풀림 작용은 인화물과 가스로, 양호하게는 H2에 대해 PH3로 이루어지는 대기권에서 실행되는 것을 특징으로 하는 반도체장치 제조공정.
- 제1항에 있어서, 상기 이온주입은 100 및 300℃사이의 온도 범위에서 이루어지는 것을 특징으로 하는 반도체장치 제조공정.
- 제1항에 있어서, 제1영역의 두께는 1/2 및 10㎛, 양호하게는 1 및 4㎛ 또는 2 및 3㎛ 사이인 것을 특징으로 하는 반도체장치 제조공정.
- 제1항에 있어서, n-형 인듐 인화물은 1×1017atoms/cm3에서 포화까지, 양호하게는 약 8×1018에서 3.5×1019atoms/cm3까지의 농도 범위에서 유황으로 도우프 되는 것을 특징으로 하는 반도체장치 제조공정.
- 제1항에 있어서, p-형 인듐 인화물은 약 1×107에서 2×1018atoms/cm3까지의 농도 범위에서 아연으로 도우프 되는 것을 특징으로 하는 반도체장치 제조공정.
- 제1항에 있어서, 상기 장치는 적어도 하나의 공핍형 MISFET 또는 적어도 하나의 MESFET 또는 적어도 하나의 증가형 MISFET 또는 적어도 하나의 JFET, 또는 FET의 적합한 조합을 포함하는 적어도 하나의 전계효과 트랜지스터를 포함하는 것을 특징으로 하는 반도체장치 제조공정.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80-864,198 | 1986-05-16 | ||
US06/864,198 US4738934A (en) | 1986-05-16 | 1986-05-16 | Method of making indium phosphide devices |
US864198 | 1986-05-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880001060A true KR880001060A (ko) | 1988-03-31 |
KR910008713B1 KR910008713B1 (ko) | 1991-10-19 |
Family
ID=25342732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870004798A KR910008713B1 (ko) | 1986-05-16 | 1987-05-15 | 반도체 장치 제조공정 |
Country Status (7)
Country | Link |
---|---|
US (1) | US4738934A (ko) |
EP (1) | EP0251458B1 (ko) |
JP (1) | JPH0716003B2 (ko) |
KR (1) | KR910008713B1 (ko) |
CA (1) | CA1332696C (ko) |
DE (1) | DE3784565T2 (ko) |
HK (1) | HK117393A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100451661B1 (ko) * | 1995-11-21 | 2004-11-20 | 몬테카티니 테크놀로지 에스. 알. 엘. | 에틸렌을옥시클로리네이션하기위한촉매,이촉매의제조방법및이촉매를사용한옥시클로리네이션방법 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR880009419A (ko) * | 1987-01-26 | 1988-09-15 | 이찌하라 시로 | 반도체소자의 제조방법 및 그 방법에 의해 제조된 반도체 소자 |
GB8913198D0 (en) * | 1989-06-08 | 1989-07-26 | British Telecomm | Guard ring structure |
CZ279488B6 (cs) * | 1990-09-25 | 1995-05-17 | Lonza A.G. | Způsob mikrobiologické výroby hydroxylovaných heterocyklů |
US5656538A (en) * | 1995-03-24 | 1997-08-12 | The Board Of Trustees Of The University Of Illinois | Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices |
US5821147A (en) * | 1995-12-11 | 1998-10-13 | Lucent Technologies, Inc. | Integrated circuit fabrication |
US5861335A (en) * | 1997-03-21 | 1999-01-19 | Advanced Micro Devices, Inc. | Semiconductor fabrication employing a post-implant anneal within a low temperature high pressure nitrogen ambient to improve channel and gate oxide reliability |
US6214678B1 (en) * | 1997-05-21 | 2001-04-10 | Hughes Electronics Corp | Growth technique for low noise high electron mobility transistors by metal organic vapor phase epitaxy |
US6060402A (en) * | 1998-07-23 | 2000-05-09 | The Whitaker Corporation | Process for selective recess etching of epitaxial field effect transistors with a novel etch-stop layer |
JP2000100829A (ja) * | 1998-09-25 | 2000-04-07 | Sony Corp | 接合型電界効果トランジスタおよびその製造方法 |
US6051865A (en) * | 1998-11-09 | 2000-04-18 | Advanced Micro Devices, Inc. | Transistor having a barrier layer below a high permittivity gate dielectric |
US6287946B1 (en) * | 1999-05-05 | 2001-09-11 | Hrl Laboratories, Llc | Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers |
US6891202B2 (en) * | 2001-12-14 | 2005-05-10 | Infinera Corporation | Oxygen-doped Al-containing current blocking layers in active semiconductor devices |
FR2845523B1 (fr) * | 2002-10-07 | 2005-10-28 | Procede pour realiser un substrat par transfert d'une plaquette donneuse comportant des especes etrangeres, et plaquette donneuse associee | |
US20090072205A1 (en) * | 2003-05-07 | 2009-03-19 | Sumitomo Electric Industries, Ltd. | Indium phosphide substrate, indium phosphide single crystal and process for producing them |
US20070138515A1 (en) * | 2005-12-19 | 2007-06-21 | M/A-Com, Inc. | Dual field plate MESFET |
US7485514B2 (en) * | 2006-01-05 | 2009-02-03 | Winslow Thomas A | Method for fabricating a MESFET |
US8759225B2 (en) * | 2012-09-04 | 2014-06-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to form a CMOS image sensor |
EP2982783A4 (en) * | 2013-03-26 | 2017-01-04 | JX Nippon Mining & Metals Corporation | Compound semiconductor wafer, photoelectric conversion element, and method for producing group iii-v compound semiconductor single crystals |
US8941123B2 (en) * | 2013-05-30 | 2015-01-27 | International Business Machines Corporation | Local interconnects by metal-III-V alloy wiring in semi-insulating III-V substrates |
RU2654984C1 (ru) * | 2017-07-05 | 2018-05-23 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" | Способ изготовления легированных областей |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4404172A (en) * | 1981-01-05 | 1983-09-13 | Western Electric Company, Inc. | Method and apparatus for forming and growing a single crystal of a semiconductor compound |
US4601095A (en) * | 1981-10-27 | 1986-07-22 | Sumitomo Electric Industries, Ltd. | Process for fabricating a Schottky-barrier gate field effect transistor |
FR2517120A1 (fr) * | 1981-11-26 | 1983-05-27 | Michel Salvi | Procede de fabrication d'un composant semiconducteur par diffusion avec implantation ionique prealable et composant obtenu |
JPS58145154A (ja) * | 1982-02-22 | 1983-08-29 | Nec Corp | 電界効果形半導体装置 |
JPS5950567A (ja) * | 1982-09-16 | 1984-03-23 | Hitachi Ltd | 電界効果トランジスタの製造方法 |
US4505023A (en) * | 1982-09-29 | 1985-03-19 | The United States Of America As Represented By The Secretary Of The Navy | Method of making a planar INP insulated gate field transistor by a virtual self-aligned process |
US4611388A (en) * | 1983-04-14 | 1986-09-16 | Allied Corporation | Method of forming an indium phosphide-boron phosphide heterojunction bipolar transistor |
US4544417A (en) * | 1983-05-27 | 1985-10-01 | Westinghouse Electric Corp. | Transient capless annealing process for the activation of ion implanted compound semiconductors |
US4555273A (en) * | 1984-02-27 | 1985-11-26 | The United States Of America As Represented By The Secretary Of The Navy | Furnace transient anneal process |
JPS6149484A (ja) * | 1984-08-18 | 1986-03-11 | Matsushita Electric Ind Co Ltd | 化合物半導体素子及びその製造方法 |
-
1986
- 1986-05-16 US US06/864,198 patent/US4738934A/en not_active Expired - Lifetime
-
1987
- 1987-05-11 EP EP87304155A patent/EP0251458B1/en not_active Expired - Lifetime
- 1987-05-11 DE DE8787304155T patent/DE3784565T2/de not_active Expired - Fee Related
- 1987-05-14 CA CA000537177A patent/CA1332696C/en not_active Expired - Fee Related
- 1987-05-15 KR KR1019870004798A patent/KR910008713B1/ko not_active IP Right Cessation
- 1987-05-16 JP JP62118127A patent/JPH0716003B2/ja not_active Expired - Lifetime
-
1993
- 1993-10-28 HK HK1173/93A patent/HK117393A/xx not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100451661B1 (ko) * | 1995-11-21 | 2004-11-20 | 몬테카티니 테크놀로지 에스. 알. 엘. | 에틸렌을옥시클로리네이션하기위한촉매,이촉매의제조방법및이촉매를사용한옥시클로리네이션방법 |
Also Published As
Publication number | Publication date |
---|---|
KR910008713B1 (ko) | 1991-10-19 |
CA1332696C (en) | 1994-10-25 |
EP0251458A2 (en) | 1988-01-07 |
HK117393A (en) | 1993-11-05 |
JPH0716003B2 (ja) | 1995-02-22 |
EP0251458B1 (en) | 1993-03-10 |
DE3784565T2 (de) | 1993-06-24 |
JPS62283671A (ja) | 1987-12-09 |
EP0251458A3 (en) | 1988-09-14 |
US4738934A (en) | 1988-04-19 |
DE3784565D1 (de) | 1993-04-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR880001060A (ko) | 반도체 장치 제조공정 | |
KR850002177A (ko) | 얕은 n형 영역을 형성하는 방법 | |
KR890003044A (ko) | 반도체 장치 및 그의 제조방법 | |
IE52184B1 (en) | Device isolation in silicon semiconductor substrates | |
KR950034738A (ko) | 박막 트랜지스터의 구조 및 제조방법 | |
KR870006679A (ko) | 전기효과 트랜지스터 | |
EP0414400A3 (en) | Mosfet depletion device | |
JPS5743455A (en) | Complementary type semiconductor device | |
GB1503249A (en) | Semiconductor devices | |
KR930005272A (ko) | Ldd형 mos 트랜지스터 및 그의 제조방법 | |
KR950026029A (ko) | Mos트랜지스터 반도체 장치 및 그의 제조방법 | |
Anholt et al. | Mechanism of EL2 effects on GaAs field‐effect transistor threshold voltages | |
KR920003555A (ko) | 등온이단계 급속 열처리에 의한 내열성 자기정렬 게이트 GaAs MESFET의 제조방법 | |
KR940004711A (ko) | 폴리실리콘층 형성방법 | |
KR920015632A (ko) | 소이모스소자 제조방법 | |
KR940004851A (ko) | 모스(mos) 트랜지스터 제조방법 | |
KR910005441A (ko) | 실리사이드를 사용한 매설 접촉 형성방법 | |
KR950015569A (ko) | 반도체장치의 제조방법 | |
KR910010714A (ko) | 메모리 집적회로 및 그 제조공정 | |
KR960039216A (ko) | Soi기판을 사용하는 반도체장치의 트랜지스터 제조방법 | |
JPS6449266A (en) | Transistor | |
KR890004399A (ko) | 집적 반도체회로를 내포하고 있는 기판에 저고유 접촉저항을 갖는 접점을 제조하는 방법 | |
EP0309828A3 (en) | An electronic semiconductor device, in particular a silicon-gate field-effect mos transistor, for high input voltages | |
KR910020940A (ko) | 고 접합파괴전압을 갖는 모오스 트랜지스터 및 그 제조방법 | |
KR880013258A (ko) | 반도체 장치의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20060929 Year of fee payment: 16 |
|
EXPY | Expiration of term |