KR880009419A - 반도체소자의 제조방법 및 그 방법에 의해 제조된 반도체 소자 - Google Patents
반도체소자의 제조방법 및 그 방법에 의해 제조된 반도체 소자 Download PDFInfo
- Publication number
- KR880009419A KR880009419A KR1019880000595A KR880000595A KR880009419A KR 880009419 A KR880009419 A KR 880009419A KR 1019880000595 A KR1019880000595 A KR 1019880000595A KR 880000595 A KR880000595 A KR 880000595A KR 880009419 A KR880009419 A KR 880009419A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- manufacturing
- prepared
- single crystal
- substrate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 16
- 238000000034 method Methods 0.000 title claims 8
- 238000004519 manufacturing process Methods 0.000 title claims 7
- 239000000758 substrate Substances 0.000 claims 9
- 239000013078 crystal Substances 0.000 claims 6
- 150000001875 compounds Chemical class 0.000 claims 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- 229910052799 carbon Inorganic materials 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 3
- 150000002500 ions Chemical class 0.000 claims 3
- 239000007788 liquid Substances 0.000 claims 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/934—Sheet resistance, i.e. dopant parameters
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (8)
- 리퀴드 인켑슬레이티드 크조크랄스키법에 의해 제조된 1×1015㎝3또는 그 이하의 탄소농도를 갖는 IIIb-Vb족 화합물 단결정반도체기판을 제조하고, 도전불순물 이온들을 상기 단결정 반도체기판에 주입하여 어닐링하는 단계로 구성됨을 특징으로 하는 반도체소자의 제조방법.
- 제1항에 있어서, 상기 IIIb-Vb족 화합물의 반도체가 GaAs, Ga1-XInAs(), InP등으로 구성된 군(郡)에서 선택되는 것을 특징으로하는 반도체소자의 제조방법.
- 제1항에 있어서, 상기기판의 고유저항이 1×103내지 1×107Ω·㎝임을 특징으로 하는 반도체소자의 제조방법.
- 리퀴드 인켑슬레이티드 크조크랄스키법에 의해 제조된 1×1015㎝-3또는 그 이하의 탄소농도를 갖는 IIIb-Vb족 화합물 단결정반도체기판을 제조하고, 도전불순물 이온을 상기 단결정반도체기판에 주입하여, 약 800℃ 내지 1000℃에서 2분 내지 15분 동안 어닐링하고, 0.29℃/초 내지 90℃/초의 냉각속도로 600℃ 또는 그 이하온도까지 냉각하는 단계로 구성됨을 특징으로 하는 반도체소자의 제조방법.
- 제4항에 있어서, 상기 IIIb-Vb족 화합물의 반도체가 GaAs, Ga1-xInxAs(), InP등으로 구성된 군에서 선정되는 것을 특징으로 하는 반도체소자의 제조방법.
- 제4항에 있어서, 상기 기판의 고유저항이 1×105내지 1×107Ω·㎝임을 특징으로 하는 반도체소자의 제조방법.
- 제4항에 있어서, 어닐링된 기판의 고유저항이 1×107Ω·㎝ 또는 그 이상임을 특징으로 하는 반도체소자의 제조방법.
- 리퀴드 인켑슬레이티드 크조크랄스키법에 의해 제조된 1×1015㎝-3또는 그 이하의 탄소농도를 갖는 IIIb-Vb족 화합물 단결정반도체기판을 제조하고, 도전불순물 이온들을 상기 단결정 반도체기판에 주입하고, 어닐링하는 단계로 구성된 반도체소자 제조방법에 의해서 제도된 반도체소자.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-15839 | 1987-01-26 | ||
JP62015839A JPS63184327A (ja) | 1987-01-26 | 1987-01-26 | 半導体装置 |
JP62225746A JP2516641B2 (ja) | 1987-09-09 | 1987-09-09 | 無機化合物単結晶基板のアニ―ル方法 |
JP62-225746 | 1987-09-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR880009419A true KR880009419A (ko) | 1988-09-15 |
Family
ID=26352064
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880000595A KR880009419A (ko) | 1987-01-26 | 1988-01-26 | 반도체소자의 제조방법 및 그 방법에 의해 제조된 반도체 소자 |
Country Status (2)
Country | Link |
---|---|
US (1) | US5051376A (ko) |
KR (1) | KR880009419A (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1989008158A1 (en) * | 1988-02-24 | 1989-09-08 | Nippon Mining Co., Ltd. | Single crystal of compound semiconductor, process for its production and semiconductor device manufactured by using same |
US5228927A (en) * | 1988-03-25 | 1993-07-20 | Shin-Etsu Handotai Company Limited | Method for heat-treating gallium arsenide monocrystals |
US5209811A (en) * | 1988-03-25 | 1993-05-11 | Shin-Etsu Handotai Company Limited Of Japan | Method for heat-treating gallium arsenide monocrystals |
AUPQ439299A0 (en) * | 1999-12-01 | 1999-12-23 | Silverbrook Research Pty Ltd | Interface system |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4158851A (en) * | 1976-03-29 | 1979-06-19 | Sumitomo Electric Industries, Ltd. | Semi-insulating gallium arsenide single crystal |
JPS5440075A (en) * | 1977-09-06 | 1979-03-28 | Futaba Denshi Kogyo Kk | Compound semiconductor wafer |
JPS58181799A (ja) * | 1982-04-16 | 1983-10-24 | Nippon Telegr & Teleph Corp <Ntt> | 硼素を添加したGaAs単結晶の製造方法 |
US4505023A (en) * | 1982-09-29 | 1985-03-19 | The United States Of America As Represented By The Secretary Of The Navy | Method of making a planar INP insulated gate field transistor by a virtual self-aligned process |
USH291H (en) * | 1983-03-01 | 1987-06-02 | The United States Of America As Represented By The Secretary Of The Navy | Fully ion implanted junction field effect transistor |
US4544417A (en) * | 1983-05-27 | 1985-10-01 | Westinghouse Electric Corp. | Transient capless annealing process for the activation of ion implanted compound semiconductors |
JPS6046022A (ja) * | 1983-08-23 | 1985-03-12 | Sumitomo Electric Ind Ltd | イオン注入用基板の前処理方法 |
JPS6057923A (ja) * | 1983-09-09 | 1985-04-03 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体結晶の均質化方法 |
US4602965A (en) * | 1984-03-13 | 1986-07-29 | Communications Satellite Corporation | Method of making FETs in GaAs by dual species implantation of silicon and boron |
US4594173A (en) * | 1984-04-19 | 1986-06-10 | Westinghouse Electric Corp. | Indium doped gallium arsenide crystals and method of preparation |
US4759822A (en) * | 1984-10-12 | 1988-07-26 | Triquint Semiconductor Inc. | Methods for producing an aperture in a surface |
JPS61199641A (ja) * | 1985-02-28 | 1986-09-04 | Oki Electric Ind Co Ltd | 化合物半導体素子の製造方法 |
JPS62128525A (ja) * | 1985-11-29 | 1987-06-10 | Matsushita Electric Ind Co Ltd | 化合物半導体基板のアニ−ル方法 |
US4738934A (en) * | 1986-05-16 | 1988-04-19 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of making indium phosphide devices |
-
1988
- 1988-01-26 KR KR1019880000595A patent/KR880009419A/ko not_active Application Discontinuation
-
1990
- 1990-01-11 US US07/463,642 patent/US5051376A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5051376A (en) | 1991-09-24 |
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A201 | Request for examination | ||
N231 | Notification of change of applicant | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |