KR870008055A - 질화 알루미늄 소결체 및 그 제조방법 - Google Patents

질화 알루미늄 소결체 및 그 제조방법 Download PDF

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KR870008055A
KR870008055A KR870001437A KR870001437A KR870008055A KR 870008055 A KR870008055 A KR 870008055A KR 870001437 A KR870001437 A KR 870001437A KR 870001437 A KR870001437 A KR 870001437A KR 870008055 A KR870008055 A KR 870008055A
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elements
cut aluminum
sintered body
aluminum sintered
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KR870001437A
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KR900006122B1 (ko
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히데끼 사또
노부유끼 미즈노야
미쓰요시 엔도
슌이찌로오 다나까
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와다리 스기이찌로오
가부시끼가이샤 도시바
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Priority claimed from JP3382486A external-priority patent/JPS62197372A/ja
Priority claimed from JP3382686A external-priority patent/JPS62197374A/ja
Priority claimed from JP61171914A external-priority patent/JPH0738491B2/ja
Application filed by 와다리 스기이찌로오, 가부시끼가이샤 도시바 filed Critical 와다리 스기이찌로오
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    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
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    • C04B41/87Ceramics
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C30/00Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
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    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
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    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
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    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5133Metallising, e.g. infiltration of sintered ceramic preforms with molten metal with a composition mainly composed of one or more of the refractory metals
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    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/85Coating or impregnation with inorganic materials
    • C04B41/88Metals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
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    • H01L23/00Details of semiconductor or other solid state devices
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    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
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    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/901Printed circuit
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/24917Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

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Abstract

내용 없음

Description

질화 알루미늄 소결체 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (4)

  1. 적어도 그 표면의 일부에 도전성 금속화층이 있는 절화 알루미늄 소결체에 있어서, 그 도전성 금속화층이
    가) 몰리브덴, 텅스텐 및 탄탈로된 그룹(그룹 I)군에서 선택된 적어도 한가지 및,
    나) 주기율표의 제 Ⅲ족 원소, 제 Ⅳa쪽 원소, 희토류 원소 및 악티늄쪽 원소로 된 그룹(그룹 Ⅱ)에서 선택된 적어도 한가지를 구성상의 성분 원소로서 포함하고 있는 것을 특징으로 하는 절화 알루미늄 소결체.
  2. 제 1 항에 있어서, 그 구성상이 그 성분 원소 단체(單體), 그 성분 원소를 포함하는 화합물 또는 고용체, 또는 이들 단체, 화합물 및 고용체중의 두개 이상의 혼합체인 것을 특징으로 하는 절화 알루미늄 소결체.
  3. 제 1 항에 있어서, 그 절화 알루미늄 소결체가 반도체용 기판인 것을 특징으로 하는 절화 알루미늄 소결체.
  4. 절화 알루미늄의 소결전의 구체(驅體)의 몰리브덴, 텅스텐, 탄탈 및 이들중 한가지 또는 두가지 이상을 포함하고 있는 화합물의 군에서 선택된 적어도 한가지와 주기율표의 Ⅲ쪽 원소, Ⅳa쪽 원소, 희토류 원소(희토류 원소는 Sc. Y를 포함하는 란탄계이다), 악티늄 쪽계 원소 및 이들중 한가지 또는 두가지 이상을 포함하고 있는 화합물의 군에서 선택된 적어도 한가지를 포함하는 페이스트를 도포하고 계속해서 전체를 동시에 소결하는 것을 특징으로 하는 도전성 금속화층이 있는 절화 알루미늄 소결체의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870001437A 1986-02-20 1987-02-20 질화알루미늄 소결체 및 그 제조방법 KR900006122B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP3382486A JPS62197372A (ja) 1986-02-20 1986-02-20 導電性メタライズ層を有する窒化アルミニウム焼結体の製造方法
JP61-33824 1986-02-20
JP3382686A JPS62197374A (ja) 1986-02-20 1986-02-20 導電性メタライズ層を有する窒化アルミニウム焼結体の製造方法
JP33826 1986-02-20
JP33824 1986-02-20
JP61171914A JPH0738491B2 (ja) 1986-07-23 1986-07-23 回路基板の製造方法及び回路基板

Publications (2)

Publication Number Publication Date
KR870008055A true KR870008055A (ko) 1987-09-24
KR900006122B1 KR900006122B1 (ko) 1990-08-24

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ID=27288220

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KR1019870001437A KR900006122B1 (ko) 1986-02-20 1987-02-20 질화알루미늄 소결체 및 그 제조방법

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Country Link
US (1) US4770953A (ko)
EP (1) EP0235682B2 (ko)
KR (1) KR900006122B1 (ko)
DE (1) DE3789628T3 (ko)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6265991A (ja) * 1985-09-13 1987-03-25 株式会社東芝 高熱伝導性セラミツクス基板
JPH0680873B2 (ja) * 1986-07-11 1994-10-12 株式会社東芝 回路基板
JPS6318648A (ja) * 1986-07-11 1988-01-26 Toshiba Corp 窒化アルミニウム回路基板
US5529852A (en) * 1987-01-26 1996-06-25 Sumitomo Electric Industries, Ltd. Aluminum nitride sintered body having a metallized coating layer on its surface
CA1333241C (en) * 1987-01-26 1994-11-29 Akira Sasame Aluminum nitride sintered body formed with metallized layer and method of manufacturing the same
US4906511A (en) * 1987-02-12 1990-03-06 Kabushiki Kaisha Toshiba Aluminum nitride circuit board
US4883704A (en) * 1987-03-30 1989-11-28 Kabushiki Kaisha Toshiba Circuit substrate comprising nitride type ceramics, method for preparing it, and metallizing composition for use in it
JPH0676790B2 (ja) * 1987-07-30 1994-09-28 株式会社東芝 イグナイタ
JP2544398B2 (ja) * 1987-08-27 1996-10-16 富士通株式会社 A1nセラミックスのメタライズ方法
US5017434A (en) * 1988-01-27 1991-05-21 Enloe Jack H Electronic package comprising aluminum nitride and aluminum nitride-borosilicate glass composite
JPH01203270A (ja) * 1988-02-08 1989-08-16 Sumitomo Electric Ind Ltd 高熱伝導性窒化アルミニウム焼結体及びその製造法
JP2949586B2 (ja) * 1988-03-07 1999-09-13 株式会社日立製作所 電導材及びその製造法
US5264388A (en) * 1988-05-16 1993-11-23 Sumitomo Electric Industries, Inc. Sintered body of aluminum nitride
US5272009A (en) * 1988-10-21 1993-12-21 Battelle Memorial Institute Laminate material and its use as heat-sink
JP2765885B2 (ja) * 1988-11-14 1998-06-18 新光電気工業株式会社 窒化アルミニウム回路基板及びその製造方法
JP2774560B2 (ja) * 1989-03-31 1998-07-09 株式会社東芝 窒化アルミニウムメタライズ基板
US4908116A (en) * 1989-06-01 1990-03-13 The Board Of Trustees At The Leland Stanford Junior University Capillary electrophoretic device employing structure permitting electrical contact through ionic movement
US5041700A (en) * 1989-09-27 1991-08-20 Kabushiki Kaisha Toshiba Circuit board including an aluminum nitride substrate and a multilayered metal oxynitride structure
US5830570A (en) * 1989-12-19 1998-11-03 Kyocera Corporation Aluminum nitride substrate and process for preparation thereof
US5370907A (en) * 1990-06-15 1994-12-06 Sumitomo Electric Industries, Ltd. Forming a metallized layer on an AlN substrate by applying and heating a paste of a metal composed of W and Mo
JPH0461293A (ja) * 1990-06-29 1992-02-27 Toshiba Corp 回路基板及びその製造方法
US5200249A (en) * 1990-08-15 1993-04-06 W. R. Grace & Co.-Conn. Via metallization for AlN ceramic electronic package
US5173354A (en) * 1990-12-13 1992-12-22 Cornell Research Foundation, Inc. Non-beading, thin-film, metal-coated ceramic substrate
US5288769A (en) * 1991-03-27 1994-02-22 Motorola, Inc. Thermally conducting adhesive containing aluminum nitride
US5775403A (en) * 1991-04-08 1998-07-07 Aluminum Company Of America Incorporating partially sintered preforms in metal matrix composites
US5570502A (en) * 1991-04-08 1996-11-05 Aluminum Company Of America Fabricating metal matrix composites containing electrical insulators
US5616421A (en) * 1991-04-08 1997-04-01 Aluminum Company Of America Metal matrix composites containing electrical insulators
US5158912A (en) * 1991-04-09 1992-10-27 Digital Equipment Corporation Integral heatsink semiconductor package
CA2113451A1 (en) * 1991-09-12 1993-03-18 Yi-Hung Chiao Method of making co-fired, multilayer substrates
DE4138214A1 (de) * 1991-11-21 1993-05-27 Daimler Benz Ag Verfahren zur metallisierung von aluminiumnitridkeramik
JPH07507973A (ja) * 1992-05-12 1995-09-07 ザ カーボランダム カンパニー 窒化アルミニウムの薄膜金属化及びロウ付け
US5311399A (en) * 1992-06-24 1994-05-10 The Carborundum Company High power ceramic microelectronic package
JPH06206772A (ja) * 1992-11-18 1994-07-26 Toshiba Corp 窒化アルミニウム焼結体およびセラミック回路基板
JPH0715101A (ja) * 1993-06-25 1995-01-17 Shinko Electric Ind Co Ltd 酸化物セラミック回路基板及びその製造方法
JP3724592B2 (ja) * 1993-07-26 2005-12-07 ハイニックス セミコンダクター アメリカ インコーポレイテッド 半導体基板の平坦化方法
JP2634133B2 (ja) * 1993-08-03 1997-07-23 日本特殊陶業株式会社 高誘電体層を有する窒化アルミニウム多層配線基板及びその製造方法
JPH07142822A (ja) * 1993-09-20 1995-06-02 Fujitsu Ltd 回路基板及びその製造方法
US5482903A (en) * 1993-12-22 1996-01-09 International Business Machines Corporation Aluminum nitride body utilizing a vitreous sintering additive
JP3286651B2 (ja) * 1993-12-27 2002-05-27 株式会社住友金属エレクトロデバイス セラミック多層配線基板およびその製造法並びにセラミック多層配線基板用導電材料
US5626943A (en) * 1994-06-02 1997-05-06 The Carborundum Company Ultra-smooth ceramic substrates and magnetic data storage media prepared therefrom
DE69531980T2 (de) * 1994-08-23 2004-07-29 At & T Corp. Metallisierung von keramischen Materialien durch Auftrag einer haftenden reduzierbaren Schicht
US5552232A (en) * 1994-12-21 1996-09-03 International Business Machines Corporation Aluminum nitride body having graded metallurgy
US5928768A (en) * 1995-03-20 1999-07-27 Kabushiki Kaisha Toshiba Silicon nitride circuit board
KR100261793B1 (ko) * 1995-09-29 2000-07-15 니시무로 타이죠 고강도 고신뢰성 회로기판 및 그 제조방법
JPH09260543A (ja) * 1996-03-22 1997-10-03 Toshiba Corp 窒化アルミニウム配線基板およびその製造方法
US6033787A (en) * 1996-08-22 2000-03-07 Mitsubishi Materials Corporation Ceramic circuit board with heat sink
JPH1067586A (ja) * 1996-08-27 1998-03-10 Dowa Mining Co Ltd パワーモジュール用回路基板およびその製造方法
US6143432A (en) * 1998-01-09 2000-11-07 L. Pierre deRochemont Ceramic composites with improved interfacial properties and methods to make such composites
US6323549B1 (en) * 1996-08-29 2001-11-27 L. Pierre deRochemont Ceramic composite wiring structures for semiconductor devices and method of manufacture
US5920037A (en) * 1997-05-12 1999-07-06 International Business Machines Corporation Conductive bonding design for metal backed circuits
US6004624A (en) 1997-07-02 1999-12-21 International Business Machines Corporation Method for the controlling of certain second phases in aluminum nitride
JP4812144B2 (ja) 1998-07-22 2011-11-09 住友電気工業株式会社 窒化アルミニウム焼結体及びその製造方法
DE60115099T2 (de) 2000-01-26 2006-07-13 NGK Spark Plug Co., Ltd., Nagoya Keramisches Bauteil zum Verbinden, Verfahren zu seiner Herstellung, Vakuumschalter und Vakuumgefäss
EP1122780A3 (en) * 2000-01-31 2004-01-02 Ngk Insulators, Ltd. Laminated radiation member, power semiconductor apparatus and method for producing the same
US6607836B2 (en) * 2000-10-23 2003-08-19 Ngk Insulators, Ltd. Material of low volume resistivity, an aluminum nitride sintered body and a member used for the production of semiconductors
US20020185487A1 (en) * 2001-05-02 2002-12-12 Ramesh Divakar Ceramic heater with heater element and method for use thereof
US6732914B2 (en) * 2002-03-28 2004-05-11 Sandia National Laboratories Braze system and method for reducing strain in a braze joint
US6867978B2 (en) * 2002-10-08 2005-03-15 Intel Corporation Integrated heat spreader package for heat transfer and for bond line thickness control and process of making
WO2005098942A1 (ja) * 2004-04-05 2005-10-20 Mitsubishi Materials Corporation Ai/ain接合体、パワーモジュール用基板及びパワーモジュール並びにai/ain接合体の製造方法
US20070251938A1 (en) * 2006-04-26 2007-11-01 Watlow Electric Manufacturing Company Ceramic heater and method of securing a thermocouple thereto
CN107112299B (zh) * 2015-01-29 2019-10-01 京瓷株式会社 电路基板以及电子装置
CN109487198B (zh) * 2018-12-20 2024-01-30 西安赛尔电子材料科技有限公司 一种用于可伐合金表面稀土金属-钼二元渗镀层的制备方法
CN114538933B (zh) * 2020-11-24 2022-11-22 娄底市安地亚斯电子陶瓷有限公司 一种行波管夹持杆的制备方法
CN116410003A (zh) * 2021-12-31 2023-07-11 江苏博睿光电股份有限公司 一种基板、制备方法及应用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3927815A (en) * 1971-11-22 1975-12-23 Ngk Insulators Ltd Method for producing multilayer metallized beryllia ceramics
JPS5811390B2 (ja) * 1977-02-18 1983-03-02 株式会社東芝 熱伝導性基板の製造方法
JPS5848926A (ja) * 1981-09-18 1983-03-23 Hitachi Ltd 絶縁型半導体装置
DE3247985C2 (de) * 1982-12-24 1992-04-16 W.C. Heraeus Gmbh, 6450 Hanau Keramischer Träger
US4659611A (en) * 1984-02-27 1987-04-21 Kabushiki Kaisha Toshiba Circuit substrate having high thermal conductivity
JPS61142759A (ja) * 1984-12-14 1986-06-30 Ngk Spark Plug Co Ltd Icパツケ−ジ用基板

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EP0235682B2 (en) 1997-11-12
US4770953A (en) 1988-09-13
EP0235682B1 (en) 1994-04-20
EP0235682A3 (en) 1988-08-17
EP0235682A2 (en) 1987-09-09
DE3789628D1 (de) 1994-05-26
DE3789628T2 (de) 1994-09-01
KR900006122B1 (ko) 1990-08-24
DE3789628T3 (de) 1998-04-02

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