CN116410003A - 一种基板、制备方法及应用 - Google Patents
一种基板、制备方法及应用 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 63
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000000919 ceramic Substances 0.000 claims abstract description 80
- 238000005245 sintering Methods 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 35
- 239000000843 powder Substances 0.000 claims description 30
- 239000011888 foil Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 13
- 230000000630 rising effect Effects 0.000 claims description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910018509 Al—N Inorganic materials 0.000 claims description 7
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 7
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- 238000005266 casting Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 238000000498 ball milling Methods 0.000 claims description 3
- 238000009694 cold isostatic pressing Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 238000001272 pressureless sintering Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- -1 polyethylene Polymers 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 239000004698 Polyethylene Substances 0.000 claims 1
- 229920000573 polyethylene Polymers 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 239000007790 solid phase Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000010936 titanium Substances 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 238000004806 packaging method and process Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 230000005284 excitation Effects 0.000 description 5
- 239000006104 solid solution Substances 0.000 description 5
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000009877 rendering Methods 0.000 description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011268 mixed slurry Substances 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000883 Ti6Al4V Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
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Abstract
本发明提出一种Ti‑AlN陶瓷基板、制备方法及应用，包括以下步骤：制备AlN陶瓷胶片；制备Ti‑AlN陶瓷素片；将所述Ti‑AlN陶瓷素片进行反应烧结，获得Ti‑AlN陶瓷基板。本发明利用固相扩散法制备获得Ti‑AlN陶瓷基板，具有高导热率、低成本的优点；适用于第三代半导体器件及发光器件。
Description
技术领域
本发明涉及封装基板领域，具体地涉及一种高导热Ti-AlN陶瓷基板及其制备方法、应用。
背景技术
随着大规模集成电路的发展，人们对于封装用基板的要求也越来越高。其中，高热导率、高强度、低介电常数是集成电路对封装用基板的最基本要求。
封装用基片还应与硅片具有良好的热匹配、易成型、高表面平整度、易金属化、易加工、低成本等特点和一定的力学性能。
氮化铝(AlN)作为一种综合性能优良新型的先进陶瓷材料，具有优良的热传导性，可靠的电绝缘性，低的介电常数和介电损耗，无毒以及与硅相匹配的热膨胀系数等一系列优良特性，被认为是新一代高集程度半导体基片和电子器件封装的理想材料，受到了国内外研究者的广泛重视。在理论上，AlN的热导率为320W/(m·K)，工业上实际制备的多晶氮化铝的热导率也可达100～250W/(m)，该数值是传统基板材料氧化铝热导率的5倍～10倍。
但如何进一步提高现有氮化铝陶瓷基板的性能并降低其制造成本是值得研究的技术问题。
发明内容
针对以上技术问题，本发明拟提出一种氮化硅与氮化铝陶瓷的复合基板，利用各自的优点，制备一种具有高强度、高导热率的封装基板。
具体地，本发明所提出的技术方案如下：
一种Ti-AlN陶瓷基板的制备方法，包括以下步骤：
制备AlN陶瓷胶片；
制备Ti-AlN陶瓷素片；
将所述Ti-AlN陶瓷素片进行反应烧结，获得Ti-AlN陶瓷基板。
可选地，所述制备AlN陶瓷胶片包括：
将氮化铝粉、氧化钇粉、聚乙二醇、聚乙二醇缩丁醛和乙醇进行混合，经搅拌、球磨后得到流延浆料；
经流延工艺得到AlN陶瓷胶片。
可选地，其中，氮化铝粉、氧化钇粉、聚乙二醇、聚乙二醇缩丁醛和乙醇的质量比为9.5∶0.5∶1∶1∶20。
可选地，所述制备Ti-AlN陶瓷素片包括：
将TC4箔带切割后与所述AlN陶瓷胶片叠加进行冷等静压成型、排胶得到Ti-AlN陶瓷素片。
可选地，所述反应烧结是将Ti-AlN陶瓷素片置于氮气气氛下进行无压烧结。
可选地，所述反应烧结的温度曲线为：0-900℃升温速度为10℃/min；900℃保温1h； 900℃-1200℃升温速度为5℃/min；1200℃-1700℃升温速度为2℃/min；1700℃-1800℃升温速度为1℃/min；1800℃保温4h。
可选地，所述TC4箔的成分包括Ti-6Al-V；和/或所述TC4箔的厚度为0.01mm。
可选地，所述冷等静压压力约为100MPa、保压时间约30min。
本发明还提出一种Ti-AlN陶瓷基板，包括叠置的AlN陶瓷衬底、过渡层、AlN薄膜层及Ti种子层。
可选地，所述过渡层为Ti-Al-N层。
本发明还提出一种第三代半导体功率器件，包括本发明所提出的陶瓷基板，其中所述陶瓷基板作为第三代半导体功率器件的热电分离载板。
本发明还提出一种发光器件，包括本发明所提出的陶瓷基板，其中陶瓷基板作为发光器件的承载基板。
本发明具有以下优势：
(1)TC4箔和AlN陶瓷基板的结合会在界面处发生固相扩散反应，生成Ti-Al-N三元固溶体，大大提高了其界面结合强度，优于目前常用的DPC工艺；
(2)TC4箔中的Ti会在氮气气氛中氮化为TiN，成为陶瓷基板后期金属覆铜的种子层，省去磁控溅射工艺，大大提高生产效率，降低工艺复杂程度和成本；
(3)TC4箔中的Al元素在氮气中反应为AlN，这与基体和TiN的结合良好，提高界面层的导热率；
(4)原料TC4箔工业化程度较高，成本远低于高纯磁控溅射用金属Ti靶，从而大大降低陶瓷基板金属化的成本，提高生产效率。
附图说明
图1是本发明其中一实施例的Ti-AlN陶瓷基板制备工艺流程图。
图2是本发明其中一实施例的Ti-AlN陶瓷基板截面背散射图。
图3是本发明其中一实施例的Ti-AlN陶瓷基板应用于第三代半导体器件的结构示意图。
图4是本发明其中一实施例的Ti-AlN陶瓷基板应用于发光器件的结构示意图。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护范围。
除非另外具体说明，本发明中使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明中使用的“包括”或者“包含”等既不限定所提及的形状、数字、步骤、操作、构件、原件和/或它们的组，也不排除出现或加入一个或多个其他不同的形状、数字、步骤、动作、操作、构件、原件和/或它们的组。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示技术特征的数量与顺序。
实施例1
本发明提出一种Ti-AlN陶瓷基板的制备方法，如图1所示，包括以下步骤：
S1：制备AlN陶瓷胶片；
具体地，将氮化铝粉、氧化钇粉、聚乙二醇、聚乙二醇缩丁醛和乙醇进行混合，搅拌1h后得到混合料浆；之后将混合料浆放入聚四氟乙烯罐中球磨12h，球磨后料浆进行过筛除泡后得到流延浆料，浆料经过流延工艺后得到AlN陶瓷胶片。其中，氮化铝粉、氧化钇粉、聚乙二醇、聚乙二醇缩丁醛和乙醇的质量比(8-12)∶(0.25-1)∶(0.75-1.5)∶(0.5-1.5)∶ (15-25)。其中，最优的质量比为9.5∶0.5∶1∶1∶20。
S2：制备Ti-AlN陶瓷素片；
具体地，将TC4箔带切割后与AlN陶瓷胶片叠加进行冷等静压成型，最后经过500℃空气排胶得到Ti-AlN陶瓷素片。其中，本发明例如TC4箔的成分为Ti-6Al-V；厚度为0.01mm；冷等静压压力为100MPa；保压时间30min。
S3：将所述Ti-AlN陶瓷素片进行反应烧结，获得Ti-AlN陶瓷基板。
具体地，将步骤S1和S2中制备的陶瓷素片置于氮化硼模具中在氮气气氛下进行无压烧结得制品。其中，烧结曲线例如：升温速率为：0-900℃升温速度为10℃/min；900℃保温1h；900℃-1200℃升温速度为5℃/min；1200℃-1700℃升温速度为2℃/min；1700℃-1800℃升温速度为1℃/min；1800℃保温4h。
在高温烧结过程中，TC4箔和AlN陶瓷基板的结合会在界面处发生固相扩散反应，生成Ti-Al-N三元固溶体，大大提高了其界面结合强度，优于目前常用的DPC工艺。
TC4箔中的Ti会在氮气气氛中氮化为TiN，成为陶瓷基板后期金属覆铜的种子层，省去磁控溅射工艺，大大提高生产效率，降低工艺复杂程度和成本。
TC4箔中的Al元素在氮气中反应为AlN，这与基体和TiN的结合良好，提高界面层的导热率。
本发明的反应机理为固相扩散+反应烧结，首先TC4中含有的铝元素较低温度时会首先形成液相，向氮化铝侧发生扩散，促进AlN的烧结，并加固界面；此外，TC4中的金属Ti在高温区域(＞1200℃)会与氮化铝发生固溶生成Ti-Al-N不饱和固溶体，同样可以获得结合优异的Ti-AlN界面。
其中，如图2所示，为本发明的Ti-AlN陶瓷基板截面背散射图，TC4的主要成分为Ti-6Al-4V合金，TC4箔在氮气氛中生成TiN和AlN等化合物，增强与AlN基底的界面结合力。
实施例2
本发明还提出一种根据实施例1的制备方法所获得的Ti-AlN陶瓷基板，包括叠置的 AlN陶瓷衬底、过渡层、AlN薄膜层及Ti种子层。其中，所述过渡层为Ti-Al-N层。
氮化铝薄膜厚0.3-1mm，过渡层厚0.05-0.1mm，Ti种子层厚0.1-0.2mm。
实施例3
如图3所示，作为本发明的一个实施例，公开一种第三代半导体功率器件，其组成一般包括：陶瓷基板、功率器件、热沉、热沉上热界面材料、丝焊等；所述陶瓷基板作为第三代半导体功率器件热电分离的陶瓷载板。其中该陶瓷基板采用本发明实施例2所提出的陶瓷基板。该功率器件例如是IGBT器件。
实施例4
如图4所示，作为本发明的一个实施例，公开了一种发光器件，其组成一般包括：陶瓷基板、导电金属层(线路层)，发光芯片，围坝(或围墙)，外部封装材料。
其中，导电金属层(线路层)位于陶瓷基板表面，通过磁控溅射沉积铜、钛等金属薄膜作为晶种层，再由光刻胶或干膜等图形化方式配合电镀进行铜厚膜沉积，并在铜金属表面进行化学镀镍和化学镀金等最终精饰。金属层的材质一般为铜，镍，金等材料。铜层厚度为0.05-1mm，镍层厚度为2-10μm，金层厚度为50-250nm。此外陶瓷基底表面可以进行直接覆铜DBC工艺制备得铜图案，铜图形厚度为0.05-3mm。发光芯片连接至导电金属层 (线路层)；可以采用固晶胶将激发芯片阵列粘结至陶瓷基板；外部封装材料用于封装激发芯片阵列和荧光粉，其材料一般为硅胶。
作为本发明的一个优选高显色白光应用方案，发光器件中的荧光粉采用钇铝石榴石系荧光粉和(Sr，Ca)AlSiN3:Eu红色荧光粉；
作为本发明的另一个优选高显色白光应用方案，发光器件中的荧光粉采用钇铝石榴石系荧光粉、(Sr，Ca)AlSiN3:Eu红色荧光粉和KSF红色荧光粉；
作为本发明的另一个优选高显色照明应用方案，发光器件中的荧光粉采用 (Sr，Ca)AlSiN3:Eu氮化物红粉和(Sr，Ba)2SiO4:Eu硅酸盐荧光粉；
作为本发明的一个优选高色域背光应用方案，发光器件中的荧光粉采用B-塞隆荧光粉和KSF红色荧光粉。
其中，发光芯片阵列中的发光芯片可以为紫外、紫光、蓝光、绿光、红光或红外发光芯片中一种或多种。
例如：发光芯片阵列中的发光芯片采用蓝光芯片、绿光芯片和红色芯片组合，形成RGB全彩；发光芯片阵列中的发光芯片采用紫外芯片，用于杀菌；发光芯片阵列中的发光芯片采用蓝光芯片和红光芯片的组合，用于植物照明；发光芯片阵列中的发光芯片为红外芯片用于设备图像识别。
发光芯片阵列中的发光芯片为紫外、紫光、蓝光芯片中一种或多种时，还可以起激发芯片的作用，此时发光器件中还包括荧光粉，荧光粉受激发芯片激发而发光。荧光粉可以为钇铝石榴石系荧光粉、(Sr，Ca)AlSiN3:Eu红色荧光粉、KSF红色荧光粉，β-塞隆荧光粉，(Sr，Ba)2SiO4:Eu硅酸盐荧光粉中的一种或多种。
发光芯片阵列还可以为激发芯片和发光芯片的组合。
本发明相对于现有技术具有如下优势：
(1)TC4箔和AlN陶瓷基板的结合会在界面处发生固相扩散反应，生成Ti-Al-N三元固溶体，大大提高了其界面结合强度，优于目前常用的DPC工艺；
(2)TC4箔中的Ti会在氮气气氛中氮化为TiN，成为陶瓷基板后期金属覆铜的种子层，省去磁控溅射工艺，大大提高生产效率，降低工艺复杂程度和成本；
(3)TC4箔中的Al元素在氮气中反应为AlN，这与基体和TiN的结合良好，提高界面层的导热率；
(4)原料TC4箔工业化程度较高，成本远低于高纯磁控溅射用金属Ti靶，从而大大降低陶瓷基板金属化的成本，提高生产效率。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。
Claims (12)
1.一种Ti-AlN陶瓷基板的制备方法，其特征在于，包括以下步骤：
制备AlN陶瓷胶片；
制备Ti-AlN陶瓷素片；
将所述Ti-AlN陶瓷素片进行反应烧结，获得Ti-AlN陶瓷基板。
2.根据权利要求1所述的Ti-AlN陶瓷基板的制备方法，其特征在于，所述制备AlN陶瓷胶片包括：
将氮化铝粉、氧化钇粉、聚乙二醇、聚乙二醇缩丁醛和乙醇进行混合，经搅拌、球磨后得到流延浆料；
经流延工艺得到AlN陶瓷素片。
3.根据权利要求2所述的Ti-AlN陶瓷基板的制备方法，其特征在于，其中，氮化铝粉、氧化钇粉、聚乙二醇、聚乙二醇缩丁醛和乙醇的质量比为(8-12)∶(0.25-1)∶(0.75-1.5)∶(0.5-1.5)∶(15-25)。
4.根据权利要求1或2所述的Ti-AlN陶瓷基板的制备方法，其特征在于，所述制备Ti-AlN陶瓷素片包括：
将TC4箔带切割后与所述AlN陶瓷胶片叠加进行冷等静压成型、排胶得到Ti-AlN陶瓷素片。
5.根据权利要求1所述的Ti-AlN陶瓷基板的制备方法，其特征在于，所述反应烧结是将Ti-AlN陶瓷素片置于氮气气氛下进行无压烧结。
6.根据权利要求5所述的Ti-AlN陶瓷基板的制备方法，其特征在于，所述反应烧结的温度曲线为：0-900℃升温速度为10℃/min；900℃保温1h；900℃-1200℃升温速度为5℃/min；1200℃-1700℃升温速度为2℃/min；1700℃-1800℃升温速度为1℃/min；1800℃保温4h。
7.根据权利要求4所述的Ti-AlN陶瓷基板的制备方法，其特征在于，所述TC4箔的成分包括Ti-6AI-V；和/或所述TC4箔的厚度为0.01mm。
8.根据权利要求4所述的Ti-AlN陶瓷基板的制备方法，其特征在于，所述冷等静压压力约为50-120MPa、保压时间约10-45min。
9.一种Ti-AlN陶瓷基板，其特征在于，包括叠置的AlN陶瓷衬底、过渡层、AlN薄膜层及Ti种子层。
10.根据权利要求9所述Ti-AlN陶瓷基板，其特征在于，所述过渡层为Ti-Al-N层。
11.一种第三代半导体功率器件，其特征在于，包括权利要求9-10任一项所述的陶瓷基板，所述陶瓷基板作为所述第三代半导体功率器件热电分离的载板。
12.一种发光器件，其特征在于，包括权利要求9-10任一项所述的陶瓷基板，所述陶瓷基板作为所述发光器件的承载基板。
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