CN116410001A - 一种基板、制备方法及应用 - Google Patents
一种基板、制备方法及应用 Download PDFInfo
- Publication number
- CN116410001A CN116410001A CN202111678980.7A CN202111678980A CN116410001A CN 116410001 A CN116410001 A CN 116410001A CN 202111678980 A CN202111678980 A CN 202111678980A CN 116410001 A CN116410001 A CN 116410001A
- Authority
- CN
- China
- Prior art keywords
- powder
- aluminum nitride
- substrate
- temperature rising
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000000843 powder Substances 0.000 claims abstract description 77
- 239000000919 ceramic Substances 0.000 claims abstract description 67
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 62
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 29
- 230000008569 process Effects 0.000 claims abstract description 19
- 238000005245 sintering Methods 0.000 claims abstract description 19
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- 230000000630 rising effect Effects 0.000 claims description 28
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 25
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 22
- 235000015895 biscuits Nutrition 0.000 claims description 15
- 238000005266 casting Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 13
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 12
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 12
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 12
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000002202 Polyethylene glycol Substances 0.000 claims description 11
- 229920001223 polyethylene glycol Polymers 0.000 claims description 11
- 238000000498 ball milling Methods 0.000 claims description 10
- 239000002002 slurry Substances 0.000 claims description 10
- 239000011268 mixed slurry Substances 0.000 claims description 8
- 102100032047 Alsin Human genes 0.000 claims description 5
- 101710187109 Alsin Proteins 0.000 claims description 5
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 4
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 claims description 4
- 238000004321 preservation Methods 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000001272 pressureless sintering Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 abstract description 11
- 239000003292 glue Substances 0.000 abstract description 8
- 229910052799 carbon Inorganic materials 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000007599 discharging Methods 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 5
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 230000005284 excitation Effects 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000009877 rendering Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/422—Carbon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9646—Optical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
本发明提供一种基板、制备方法及应用,属于封装基板技术领域。其中,本发明中基板的制备方法具体步骤包括:形成AIN‑Al2O3‑C的复相陶瓷素坯;对复相陶瓷素坯进行烧结处理以得到氮化铝陶瓷基板。本发明通过在氮化铝粉中加入氧化铝粉以及石墨粉,利用碳热还原合成氮化铝,通过反应生成的氮化铝取代部分原料中的氮化铝粉,由于氧化铝粉和石墨粉的成本大大低于氮化铝粉,以进一步降低氮化铝陶瓷基板的制备成本。另外,本发明以石墨粉作为碳源,可以省去传统工艺中的空气排胶步骤,以简化工艺,提高效率。
Description
技术领域
本发明属于封装基板技术领域,具体涉及一种基板、一种基板的制备方法、以及基板在第三代半导体功率器件与发光器件中的应用。
背景技术
氮化铝作为一种综合性能优良的先进陶瓷材料,具有较高的热传导性,可靠的电绝缘性,较低的介电常数和介电损耗,以及与硅相匹配的热膨胀系数等一系列优良特性,被认为是新一代高集程度半导体基片和电子器件封装的理想材料。然而,传统的氮化铝陶瓷主要是直接采用氮化铝粉为原料,而原材料氮化铝粉末价格昂贵,且氮化铝的烧结工艺比较苛刻,这进一步增加氮化铝陶瓷基板的制备成本。另外,传统成型技术中的流延料浆经过流延工艺得到陶瓷胶片后,需要进行排胶处理,以得到陶瓷素片。
因此,需要开发一种新的氮化铝陶瓷基板及其制备方法、应用,以降低制备成本以及简化工艺。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一,提供一种基板,一种基板的制备方法,以及基板在第三代半导体功率器件与发光器件中的应用。
本发明的一方面,提供一种基板的制备方法,具体步骤包括:形成AIN-Al2O3-C的复相陶瓷素坯;
对所述复相陶瓷素坯进行烧结处理以得到氮化铝陶瓷基板。
进一步地,所述形成AIN-Al2O3-C的复相陶瓷素坯,包括:
将氮化铝粉、氧化铝粉、石墨粉、氟化钙粉、氧化钇粉、聚乙二醇、聚乙二醇缩丁醛以及乙醇以及进行混合搅拌处理,以得到混合料浆;
将所述混合料浆进行球磨处理,并经过筛除泡后得到流延浆料;
将所述流延浆料经过流延工艺后得到复相陶瓷素坯。
进一步地,所述氮化铝粉、所述氧化铝粉、所述石墨粉、所述氟化钙粉、所述氧化钇粉、所述聚乙二醇、所述聚乙二醇缩丁醛以及所述乙醇之间的质量比范围为(8~9):(1~3):(0.4~0.7):(0.1~0.3):(0.1~0.3):(0.5~1.5):(0.5~1.5):(16~22)。
进一步地,所述氮化铝粉、所述氧化铝粉、所述石墨粉、所述氟化钙粉、所述氧化钇粉、所述聚乙二醇、所述聚乙二醇缩丁醛以及所述乙醇之间的质量比为7:2:0.6:0.2:0.2:1:1:20。
进一步地,所述搅拌处理的时间范围为0.5h~1.5h,所述球磨处理的时间范围为7h~9h。
进一步地,所述对所述复相陶瓷素坯进行烧结处理以得到所述氮化铝陶瓷基板,包括:
将所述复相陶瓷素坯在氮气气氛下进行无压烧结,以得到所述氮化铝陶瓷基板。
进一步地,所述烧结过程采用下述升温过程:第一升温阶段:0℃-500℃温度区间,升温速度为2℃/min;500℃保温4h;第二升温阶段:500℃-1200℃温度区间,升温速度为5℃/min;第三升温阶段:1200℃-1700℃温度区间,升温速度为2℃/min;第四升温阶段:1600℃-1820℃温度区间,升温速度为1℃/min;1820℃保温4h。
本发明的另一方面,提供一种基板,采用前文记载的所述制备方法制得。
本发明的另一方面,提供一种包含前文记载所述基板的第三代半导体功率器件,所述基板作为所述第三代半导体功率器件热电分离的载板。
本发明的另一方面,提供一种包含前文记载所述基板的发光器件,所述发光器件还包括线路层、发光芯片、荧光粉和围墙;其中,
所述发光芯片包括紫外芯片、紫光芯片以及蓝光芯片中的至少一种;
所述荧光粉包括钇铝石榴石系荧光粉、(Sr,Ca)AlSiN3:Eu红色荧光粉、KSF红色荧光粉、β-塞隆荧光粉、(Sr,Ba)2SiO4:Eu硅酸盐荧光粉中的至少一种。
本发明提供一种基板的制备方法,具体步骤包括:形成AIN-Al2O3-C的复相陶瓷素坯;对复相陶瓷素坯进行烧结处理以得到氮化铝陶瓷基板。本发明通过在氮化铝粉中加入氧化铝粉以及石墨粉,利用碳热还原合成氮化铝,通过反应生成的氮化铝取代部分原料中的氮化铝粉,由于氧化铝粉和石墨粉的成本大大低于氮化铝粉,以进一步降低氮化铝陶瓷基板的制备成本。另外,本发明以石墨粉作为碳源,可以省去传统工艺中的空气排胶步骤,以简化工艺,提高效率。
附图说明
图1为本发明一实施例的一种氮化铝陶瓷基板制备方法的流程框图;
图2为本发明另一实施例的一种氮化铝陶瓷基板制备方法的流程示意图;
图3为本发明另一实施例的IGBT器件的结构示意图;
图4为本发明另一实施例的集成发光器件的结构示意图。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案,下面结合附图和具体实施方式对本发明作进一步详细描述。显然,所描述的实施例是本发明的一部分实施例,而不是全部的实施例。基于所描述的本发明的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护范围。
除非另外具体说明,本发明中使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明中使用的“包括”或者“包含”等既不限定所提及的形状、数字、步骤、动作、操作、构件、原件和/或它们的组,也不排除出现或加入一个或多个其他不同的形状、数字、步骤、动作、操作、构件、原件和/或它们的组。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示技术特征的数量与顺序。
如图1和图2所示,本发明的一方面,提供一种氮化铝陶瓷基板的制备方法S100,具体步骤包括S110~S120:
S110、形成AIN-Al2O3-C的复相陶瓷素坯。
需要说明的是,本实施例基于氧化铝粉与碳粉成本大大低于氮化铝,因此,通过利用碳热还原合成氮化铝,以取代部分氮化铝原料,进而降低制备成本。
具体的,本实施例将氮化铝粉、氧化铝粉、石墨粉、氟化钙粉、氧化钇粉、聚乙二醇、聚乙二醇缩丁醛以及乙醇以及进行混合搅拌处理,且搅拌处理的时间范围为0.5h~1.5h,以得到混合料浆。之后,将所述混合料浆放入聚四氟乙烯罐中进行球磨处理,且球磨处理的时间范围为7h~9h,球磨处理后经过筛除泡后得到流延浆料。再将流延浆料经过流延工艺后得到AIN-Al2O3-C复相陶瓷素坯,即该复相陶瓷素坯包含氮化铝、氧化铝以及碳元素。
需要说明的是,本实施例的原料中石墨粉作为碳源,这样,可以完全省去传统工艺中的空气排胶工艺。
进一步需要说明的是,本实施例的氟化钙粉与氧化钇粉为烧结助剂,在陶瓷烧结过程中起到促进烧结致密性的作用。
进一步地,本实施例的氮化铝粉、氧化铝粉、石墨粉、氟化钙粉、氧化钇粉、聚乙二醇、聚乙二醇缩丁醛以及乙醇之间的质量比范围为(8~9):(1~3):(0.4~0.7):(0.1~0.3):(0.1~0.3):(0.5~1.5):(0.5~1.5):(16~22)。
具体的,氮化铝粉、氧化铝粉、石墨粉、氟化钙粉、氧化钇粉、聚乙二醇、聚乙二醇缩丁醛以及乙醇之间的质量比为7:2:0.6:0.2:0.2:1:1:20。
需要说明的是,本实施例利用碳热还原合成氮化铝原料,以取代部分AlN粉体,其中,氧化铝粉与碳粉的质量占比达10-50wt.%,旨在利用反应放热加速基板烧结,促进组织致密化。
S120、对复相陶瓷素坯进行烧结处理以得到所述氮化铝陶瓷基板。
具体的,将复相陶瓷素坯置于氮化硼模具中在氮气气氛下进行无压烧结,以得到所述氮化铝陶瓷基板。
需要说明的是,本示例的烧结过程的烧结温度范围为1750℃~1870℃,具体采用下述升温过程:第一升温阶段:0℃-500℃温度区间,升温速度为2℃/min;500℃保温4h;第二升温阶段:500℃-1200℃温度区间,升温速度为5℃/min;第三升温阶段:1200℃-1700℃温度区间,升温速度为2℃/min;第四升温阶段:1600℃-1820℃温度区间,升温速度为1℃/min;1820℃保温4h。
需要说明的是,本实施例的流延工艺中的有机胶在氮气气氛中裂解中生成碳,这样可以加速碳热还原反应的进行,从而提高氮化铝的纯度。
本实施例利用一步法碳热反应烧结制备氮化铝陶瓷基板,制备工艺简单,实现低温烧结与成本控制等目标。
本发明的另一方面,提供一种氮化铝陶瓷基板,采用前文记载的所述制备方法制得,具体制备过程参考前文记载,在此不再赘述。
本发明的另一方面,提供一种包含前文记载的基板的第三代半导体功率器件,该第三代半导体功率器件包括陶瓷基板、功率器件、热沉、热界面材料、丝焊等。其中,本实施例的基板为氮化铝陶瓷基板,将该陶瓷基板作为第三代半导体功率器件热电分离的陶瓷载板。
本发明的另一方面,提供一种包含前文记载的基板的发光器件,该发光器件还包括线路层、发光芯片、荧光粉、围墙(或围坝)以及封装胶、键合线等外部封装材料。
具体的,本实施例的发光芯片包括紫外芯片、紫光芯片、绿光芯片、红光芯片、红外发光芯片以及蓝光芯片中的至少一种,对此不作具体限定。
需要说明的是,本实施例的发光芯片为紫外芯片、紫光芯片、蓝光芯片中的一种或多种时,还可以起激发芯片的作用,此时发光器件中还包括荧光粉,荧光粉受激发芯片激发而发光。
在一些优选实施例中,发光芯片阵列中的发光芯片采用蓝光芯片、绿光芯片和红色芯片组合,形成RGB全彩。
在另一些优选实施例中,发光芯片阵列中的发光芯片采用紫外芯片,用于杀菌。
在另一些优选实施例中,发光芯片阵列中的发光芯片采用蓝光芯片和红光芯片的组合,用于植物照明。
在另一些优选实施例中,发光芯片阵列中的发光芯片为红外芯片,用于设备图像识别。
在另一些优选实施例中,发光芯片阵列还可以为激发芯片和发光芯片的组合。
进一步的,本实施例的荧光粉包括钇铝石榴石系荧光粉、(Sr,Ca)AlSiN3:Eu红色荧光粉、KSF红色荧光粉、β-塞隆荧光粉、(Sr,Ba)2SiO4:Eu硅酸盐荧光粉中的至少一种,对此不作具体限定。
作为本发明的一个优选高显色白光应用方案,发光器件中的荧光粉采用钇铝石榴石系荧光粉和(Sr,Ca)AlSiN3:Eu红色荧光粉。
作为本发明的另一个优选高显色白光应用方案,发光器件中的荧光粉采用钇铝石榴石系荧光粉、(Sr,Ca)AlSiN3:Eu红色荧光粉和KSF红色荧光粉。
作为本发明的另一个优选高显色照明应用方案,发光器件中的荧光粉采用(Sr,Ca)AlSiN3:Eu氮化物红粉和(Sr,Ba)2SiO4:Eu硅酸盐荧光粉。
作为本发明的另一个优选高色域背光应用方案,发光器件中的荧光粉采用β-塞隆荧光粉和KSF红色荧光粉。
下面将以具体实施例对氮化铝陶瓷基板的制备方法及其应用进行说明:
实施例1
本发明提出一种氮化铝陶瓷基板的制备方法,如图1所示,包括以下步骤:
S1:形成AIN-Al2O3-C的复相陶瓷素坯。
具体地,将氮化铝粉、氧化铝粉、石墨粉、氟化钙粉、氧化钇粉、聚乙二醇、聚乙二醇缩丁醛和乙醇进行混合,搅拌1h后得到混合料浆;之后将混合料浆放入聚四氟乙烯罐中球磨8h,有机粘附球磨处理4h,球磨后料浆进行过筛除泡后得到流延浆料,浆料经过流延工艺处理2h,再经脱脂处理18h后得到复相陶瓷素片。
其中,氮化铝粉、氧化铝粉、石墨粉、氟化钙粉、氧化钇粉、聚乙二醇、聚乙二醇缩丁醛和乙醇之间的质量比为7:2:0.6:0.2:0.2:1:1:20。
S2、对复相陶瓷素坯进行烧结处理以得到氮化铝陶瓷基板。
具体地,将复相陶瓷素坯在氮气中,并在1820℃的温度下进行烧结,以得到氮化铝陶瓷基板。
其中,升温过程如下:升温速率为:0-500℃升温速度为2℃/min;500℃保温4h;500℃-1200℃升温速度为5℃/min;1200℃-1700℃升温速度为2℃/min;1600℃-1820℃升温速度为1℃/min;1820℃保温4h。
实施例2
本发明还提出一种根据实施例1的制备方法所获得的氮化铝陶瓷基板在绝缘栅双极型晶体管器件(Insulated Gate Bipolar Transistor,IGBT)中的应用。
具体地,如图3所示,该器件主要包括热沉、陶瓷基板、芯片以及丝焊线等,其中,热沉与陶瓷基板之间通过基底粘结层连接,芯片与陶瓷基板通过芯片粘结层连接,以及,利用硅胶进行封装。本实施例的氮化铝陶瓷基板作为第三代半导体功率器件热电分离的陶瓷载板。
本实施例的IGBT器件由双极型三极管和绝缘栅型场效应管组成的复合全控型电压驱动式功率半导体器件,其兼有金属-氧化物半导体场效应晶体管的高输入阻抗和电力晶体管的低导通压降两方面的优点。
实施例3
本发明还提出一种根据实施例1的制备方法所获得的氮化铝陶瓷基板在集成发光器件中的应用。
具体地,如图4所示,该发光器件包括陶瓷基板、导电金属层(线路层),发光芯片阵列,围坝(或围墙),固晶胶,外部封装材料等;其中,发光芯片阵列中的发光芯片可以为紫外、紫光、蓝光、绿光、红光或红外发光芯片中一种或多种。
需要说明的是,本实施例的发光芯片为紫外芯片、紫光芯片、蓝光芯片中的一种或多种时,还可以起激发芯片的作用,此时发光器件中还包括荧光粉,荧光粉受激发芯片激发而发光。
进一步需要说明的是,本实施例的线路层为导电金属层,位于陶瓷基板表面,通过磁控溅射沉积铜、钛等金属薄膜作为晶种层,再由光刻胶或干膜等图形化方式配合电镀进行铜厚膜沉积,并在铜金属表面进行化学镀镍和化学镀金等最终精饰。其中,金属层的材质一般为铜,镍,金等材料,一般来说,铜层厚度为0.05-1mm,镍层厚度为2-10μm,金层厚度为50-250nm。
此外,陶瓷基板表面可以进行直接覆铜DBC工艺制备得铜图案,铜图案厚度为0.05-3mm。之后,将发光芯片连接至导电金属层(线路层),再采用固晶胶将激发芯片阵列粘结至陶瓷基板;并且,将外部封装材料用于封装激发芯片阵列和荧光粉,该外部封装材料一般为硅胶。
本发明提供一种基板、制备方法及应用,具有以下有益效果:
第一、本发明原料中的氧化铝粉和石墨粉成本大大低于氮化铝,利用碳热还原合成氮化铝原料,取代部分氮化铝粉体,大大降低原材料成本,以及利用反应放热加速基板烧结,促进组织致密化。
第二、本发明的原料中以石墨粉作为碳源,可以完全省去传统工艺中的空气排胶工艺,以简化工艺,提高效率。
第三、本发明流延工艺中的有机胶在氮气气氛中裂解中生成碳可以加速碳热还原反应的进行,从而提高氮化铝的纯度。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。
Claims (10)
1.一种基板的制备方法,其特征在于,具体步骤包括:形成AIN-Al2O3-C的复相陶瓷素坯;
对所述复相陶瓷素坯进行烧结处理以得到氮化铝陶瓷基板。
2.根据权利要求1所述的方法,其特征在于,所述形成AIN-Al2O3-C的复相陶瓷素坯,包括:
将氮化铝粉、氧化铝粉、石墨粉、氟化钙粉、氧化钇粉、聚乙二醇、聚乙二醇缩丁醛以及乙醇以及进行混合搅拌处理,以得到混合料浆;
将所述混合料浆进行球磨处理,并经过筛除泡后得到流延浆料;
将所述流延浆料经过流延工艺后得到复相陶瓷素坯。
3.根据权利要求2所述的方法,其特征在于,所述氮化铝粉、所述氧化铝粉、所述石墨粉、所述氟化钙粉、所述氧化钇粉、所述聚乙二醇、所述聚乙二醇缩丁醛以及所述乙醇之间的质量比范围为(8~9):(1~3):(0.4~0.7):(0.1~0.3):(0.1~0.3):(0.5~1.5):(0.5~1.5):(16~22)。
4.根据权利要求3所述的方法,其特征在于,所述氮化铝粉、所述氧化铝粉、所述石墨粉、所述氟化钙粉、所述氧化钇粉、所述聚乙二醇、所述聚乙二醇缩丁醛以及所述乙醇之间的质量比为7:2:0.6:0.2:0.2:1:1:20。
5.根据权利要求2所述的方法,其特征在于,所述搅拌处理的时间范围为0.5h~1.5h,所述球磨处理的时间范围为7h~9h。
6.根据权利要求1至5任一项所述的方法,其特征在于,所述对所述复相陶瓷素坯进行烧结处理以得到所述氮化铝陶瓷基板,包括:
将所述复相陶瓷素坯在氮气气氛下进行无压烧结,以得到所述氮化铝陶瓷基板。
7.根据权利要求6所述的方法,其特征在于,所述烧结过程采用下述升温过程:第一升温阶段:0℃-500℃温度区间,升温速度为2℃/min;500℃保温4h;第二升温阶段:500℃-1200℃温度区间,升温速度为5℃/min;第三升温阶段:1200℃-1700℃温度区间,升温速度为2℃/min;第四升温阶段:1600℃-1820℃温度区间,升温速度为1℃/min;1820℃保温4h。
8.一种基板,其特征在于,根据权利要求1至7任一项所述的制备方法制得。
9.一种包含权利要求8所述基板的第三代半导体功率器件,其特征在于,所述基板作为所述第三代半导体功率器件热电分离的载板。
10.一种包含权利要求8所述基板的发光器件,其特征在于,所述发光器件还包括线路层、发光芯片、荧光粉和围墙;其中,
所述发光芯片包括紫外芯片、紫光芯片以及蓝光芯片中的至少一种;
所述荧光粉包括钇铝石榴石系荧光粉、(Sr,Ca)AlSiN3:Eu红色荧光粉、KSF红色荧光粉、β-塞隆荧光粉、(Sr,Ba)2SiO4:Eu硅酸盐荧光粉中的至少一种。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111678980.7A CN116410001A (zh) | 2021-12-31 | 2021-12-31 | 一种基板、制备方法及应用 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111678980.7A CN116410001A (zh) | 2021-12-31 | 2021-12-31 | 一种基板、制备方法及应用 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN116410001A true CN116410001A (zh) | 2023-07-11 |
Family
ID=87050176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111678980.7A Pending CN116410001A (zh) | 2021-12-31 | 2021-12-31 | 一种基板、制备方法及应用 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN116410001A (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1403409A (zh) * | 2001-09-07 | 2003-03-19 | 北京航空材料研究院 | 一种制备氮化铝陶瓷基片的方法 |
CN101734923A (zh) * | 2009-12-04 | 2010-06-16 | 西安交通大学 | 一种氮化铝多孔陶瓷及其制备方法 |
CN103730565A (zh) * | 2014-01-17 | 2014-04-16 | 北京大学东莞光电研究院 | 一种氮化铝cob led光源及封装方法 |
CN103755351A (zh) * | 2013-12-30 | 2014-04-30 | 莱鼎电子材料科技有限公司 | Led用低成本氮化铝陶瓷基片的生产方法 |
CN105546499A (zh) * | 2016-02-25 | 2016-05-04 | 深圳市格天光电有限公司 | 一种散热器和覆晶工矿灯 |
CN110467443A (zh) * | 2019-09-19 | 2019-11-19 | 广东工业大学 | 一种氮化铝/氧化铝复相陶瓷及其制备方法 |
-
2021
- 2021-12-31 CN CN202111678980.7A patent/CN116410001A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1403409A (zh) * | 2001-09-07 | 2003-03-19 | 北京航空材料研究院 | 一种制备氮化铝陶瓷基片的方法 |
CN101734923A (zh) * | 2009-12-04 | 2010-06-16 | 西安交通大学 | 一种氮化铝多孔陶瓷及其制备方法 |
CN103755351A (zh) * | 2013-12-30 | 2014-04-30 | 莱鼎电子材料科技有限公司 | Led用低成本氮化铝陶瓷基片的生产方法 |
CN103730565A (zh) * | 2014-01-17 | 2014-04-16 | 北京大学东莞光电研究院 | 一种氮化铝cob led光源及封装方法 |
CN105546499A (zh) * | 2016-02-25 | 2016-05-04 | 深圳市格天光电有限公司 | 一种散热器和覆晶工矿灯 |
CN110467443A (zh) * | 2019-09-19 | 2019-11-19 | 广东工业大学 | 一种氮化铝/氧化铝复相陶瓷及其制备方法 |
Non-Patent Citations (1)
Title |
---|
王永兰等: "LED照明设计与应用", 电子科技大学出版社, pages: 57 * |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102738363B (zh) | 反射树脂片、发光二极管装置及其制造方法 | |
CN100378974C (zh) | 散热器和使用了该散热器的半导体元件和半导体封装体 | |
EP1854339B1 (en) | Illumination system comprising a green-emitting ceramic luminescence converter | |
JP5076017B2 (ja) | 発光装置 | |
US20100012964A1 (en) | Illumination system comprising monolithic ceramic luminescence converter | |
CN102683570B (zh) | 一种复合陶瓷基板封装的白光led及其制备方法 | |
JP5740344B2 (ja) | 発光装置の製造方法 | |
WO2006111907A2 (en) | Illumination system comprising a ceramic luminescence converter | |
JP2007266172A (ja) | 発光素子用配線基板ならびに発光装置 | |
JPH05504933A (ja) | 窒化アルミニウム基板への銅の直接結合 | |
CN106825978A (zh) | 一种用于陶瓷与金属焊接的钎料及焊接方法 | |
CN103000776A (zh) | Led芯片及led芯片的制造方法 | |
JP2006041230A (ja) | 発光素子用配線基板ならびに発光装置 | |
TW200814379A (en) | Luminescent light source and method for manufacturing the same | |
JP3408298B2 (ja) | 高熱伝導性窒化けい素メタライズ基板,その製造方法および窒化けい素モジュール | |
CN116410001A (zh) | 一种基板、制备方法及应用 | |
Cheng et al. | White LEDs with high optical consistency packaged using 3D ceramic substrate | |
CN108346587A (zh) | 芯片封装器件及封装方法 | |
Zhang et al. | Reliable and efficient phosphor-in-glass-based chip-scale packaging for high-power white LEDs | |
JP2006066409A (ja) | 発光素子用配線基板および発光装置ならびに発光素子用配線基板の製造方法 | |
JPH10233533A (ja) | 発光装置の形成方法及び形成装置 | |
CN116409985A (zh) | 一种基板、制备方法及应用 | |
JP2011071554A (ja) | 発光素子用配線基板ならびに発光装置 | |
CN116410002A (zh) | 一种基板、制备方法及应用 | |
CN116410018A (zh) | 一种基板、制备方法及应用 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |