KR870003010A - 실란의 제조방법 - Google Patents
실란의 제조방법 Download PDFInfo
- Publication number
- KR870003010A KR870003010A KR1019860007233A KR860007233A KR870003010A KR 870003010 A KR870003010 A KR 870003010A KR 1019860007233 A KR1019860007233 A KR 1019860007233A KR 860007233 A KR860007233 A KR 860007233A KR 870003010 A KR870003010 A KR 870003010A
- Authority
- KR
- South Korea
- Prior art keywords
- silane
- component element
- producing
- silicon
- yield
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/06—Hydrogen phosphides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
- C01B33/043—Monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B6/00—Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B6/00—Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
- C01B6/06—Hydrides of aluminium, gallium, indium, thallium, germanium, tin, lead, arsenic, antimony, bismuth or polonium; Monoborane; Diborane; Addition complexes thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 규소-마그네슘합금에 있어서, SiH4및 Si2H6의 수율과 제3성분인 Al의 함량간의 관계를 도시하는 그래프.
Claims (6)
- 일반식 SinH2n+2(식중(n=1 또는 2)로 표시되는 실란의 제조방법에 있어서,(a) 제3성분원소로서 Li,Na,K,Ca,Ba,Ti,Zr,Nb,Cr,Mo,Mn,Fe,Co,Ni,Pd,Cu,Ag,Zn,Cd,Al,Sn,Pb,Bi,Se, S 및 C로 이루어진 군에서 선택된 적어도 하나의 원소를 함유하는 규소-마그네슘함금을 제조하고,(b) 제3성분원소를 함유하는 합금을 암모니아 용매중에서 산과 반응시킴으로써,(c) SiH4에 대한 Si2H6의 생성비를 변화시키는 것을 특징으로 하는 실란의 제조방법.
- 제1항에 있어서,제3성분원소의 함유량은 규소의 그램원자에 대하여 적어도 0.1%인 것을 특징으로 하는 실란의 제조방법.
- 제1항에 있어서,제3성분원소의 함유량은 규소의 그램원자에 대하여 적어도 0.2%인 것을 특징으로 하는 실란의 제조방법.
- 제2항에 있어서,제3성분원소를 다량함유량으로써 Si2H6의 수율을 증가시키는 것을 특징으로 하는 실란의 제조방법.
- 제3항에 있어서,제3성분원소를 다량함유량으로써 Si2H6의 수율을 증가시키는 것을 특징으로 하는 실란의 제조방법.
- 제1항에 있어서,산은 염화암모늄 또는 브롬화암모늄인 것을 특징으로 하는 실란의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (15)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP193253 | 1985-09-03 | ||
JP60-193253 | 1985-09-03 | ||
JP60-193252 | 1985-09-03 | ||
JP60193253A JPH0714810B2 (ja) | 1985-09-03 | 1985-09-03 | 水素化ケイ素の製造方法 |
JP60-193250 | 1985-09-03 | ||
JP60-193254 | 1985-09-03 | ||
JP193250 | 1985-09-03 | ||
JP60193254A JPH0714811B2 (ja) | 1985-09-03 | 1985-09-03 | 水素化ケイ素の製造方法 |
JP60193251A JPH0714808B2 (ja) | 1985-09-03 | 1985-09-03 | 水素化ケイ素の製造方法 |
JP193251 | 1985-09-03 | ||
JP193252 | 1985-09-03 | ||
JP60193250A JPH078722B2 (ja) | 1985-09-03 | 1985-09-03 | 水素化ケイ素の製造方法 |
JP60193252A JPH0714809B2 (ja) | 1985-09-03 | 1985-09-03 | 水素化ケイ素の製造方法 |
JP193254 | 1985-09-03 | ||
JP60-193251 | 1985-09-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870003010A true KR870003010A (ko) | 1987-04-14 |
KR900000445B1 KR900000445B1 (ko) | 1990-01-30 |
Family
ID=27529073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860007233A KR900000445B1 (ko) | 1985-09-03 | 1986-08-30 | 실란의 제조 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4808392A (ko) |
EP (1) | EP0215606B1 (ko) |
KR (1) | KR900000445B1 (ko) |
AU (1) | AU585641B2 (ko) |
CA (1) | CA1266161A (ko) |
DE (1) | DE3671204D1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006041272A1 (en) * | 2004-10-12 | 2006-04-20 | The Ministry Of Education And Sciences Of Republic Kazakhstan Republican State Enterprise 'center Of Chemical-Technological Researches' | Method of silane production |
US8163261B2 (en) * | 2005-04-05 | 2012-04-24 | Voltaix, Llc | System and method for making Si2H6 and higher silanes |
FR2950336B1 (fr) * | 2009-09-23 | 2011-10-07 | Air Liquide | Production de silanes par broyage de grains d'alliage de silicium sous atmosphere hydrogene |
FR2950337B1 (fr) * | 2009-09-23 | 2011-10-21 | Air Liquide | Production de silanes par broyage de grains de silice melanges a un metal tel que mg ou al sous atmosphere hydrogene |
FR2950335B1 (fr) * | 2009-09-23 | 2011-10-07 | Air Liquide | Production de silanes par broyage de grains de silicium melange a un metal tel que mg, al, ca, zn sous atmosphere hydrogene |
FR2950334B1 (fr) * | 2009-09-23 | 2011-10-07 | Air Liquide | Production de silanes par broyage de grains de silicium sous atmosphere hydrogene |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE926069C (de) * | 1952-09-17 | 1955-04-04 | Metallgesellschaft Ag | Verfahren zur Herstellung von Silanen aus Magnesiumsilicid |
GB946105A (en) * | 1959-04-27 | 1964-01-08 | Ishizuka Hiroshi | Continuous process for the manufacture of pure monosilane and apparatus therefor |
US4610859A (en) * | 1983-12-29 | 1986-09-09 | Mitsui Toatsu Chemicals, Inc. | Process for producing silicon hydrides |
-
1986
- 1986-08-27 AU AU62004/86A patent/AU585641B2/en not_active Ceased
- 1986-08-28 CA CA000516999A patent/CA1266161A/en not_active Expired - Fee Related
- 1986-08-30 KR KR1019860007233A patent/KR900000445B1/ko not_active IP Right Cessation
- 1986-09-02 DE DE8686306767T patent/DE3671204D1/de not_active Expired - Fee Related
- 1986-09-02 EP EP86306767A patent/EP0215606B1/en not_active Expired - Lifetime
-
1987
- 1987-06-29 US US07/068,759 patent/US4808392A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR900000445B1 (ko) | 1990-01-30 |
EP0215606A2 (en) | 1987-03-25 |
EP0215606B1 (en) | 1990-05-16 |
AU6200486A (en) | 1987-03-05 |
US4808392A (en) | 1989-02-28 |
EP0215606A3 (en) | 1987-05-20 |
CA1266161A (en) | 1990-02-27 |
AU585641B2 (en) | 1989-06-22 |
DE3671204D1 (de) | 1990-06-21 |
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