KR860004072A - 전기회로 기판상의 실리레이티드 폴리머 절연층의 형성 및 저급알킬 폴리실세스 퀴옥산의 제조방법 - Google Patents

전기회로 기판상의 실리레이티드 폴리머 절연층의 형성 및 저급알킬 폴리실세스 퀴옥산의 제조방법 Download PDF

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KR860004072A
KR860004072A KR1019850007985A KR850007985A KR860004072A KR 860004072 A KR860004072 A KR 860004072A KR 1019850007985 A KR1019850007985 A KR 1019850007985A KR 850007985 A KR850007985 A KR 850007985A KR 860004072 A KR860004072 A KR 860004072A
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polysilses
lower alkyl
quoxane
insulating layer
silicided
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KR1019850007985A
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KR880000853B1 (ko
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순-이찌(외 4) 후꾸야마
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야마모도 다꾸마
후지쓰 가부시끼 가이샤
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Priority claimed from JP59228885A external-priority patent/JPS61108628A/ja
Priority claimed from JP60063359A external-priority patent/JPS61224330A/ja
Priority claimed from JP60104035A external-priority patent/JPS61292342A/ja
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Abstract

내용 없음

Description

전기회로 기판상의 실리레이티드 폴리머 절연층의 형성 및 저급알킬 폴리실세스 퀴옥산의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 메틸 폴리실세스 퀴옥산의 중량 평균분자량과 여러압력들에서의 중합시간의 평방근간의 상화관계를 나타내는 도표.
제2도는 트리메틸 실리레이티드 메틸 폴리실세스퀴옥산을 통하는 적외선 전달과 파형수간의 상호 관계를 나타내는 도표.
제3도는 중량평균 분자량과 트리메틸 실리레이티드 메틸폴리실세스퀴옥산의 용융점간의 상호관계를 나타내는 도표.

Claims (16)

  1. (a)유기용액을 형성하도록 -20℃ 내지 -50℃의 온도에서 유기용매내에 저급알킬 3기능 실란을 분해하는 단계와, (b) 1,000 내지 3,000 pa로 가압된 불활성 가스하의 -20℃ 내지 -50℃이 온도에서 상기 유기용액내에 물을 방울방울 떨어뜨려줌으로서 상기 저급알킬 3기능 실란을 가수분해하는 단계와 그리고 (c)1,000 내지 3,000pa로 가압된 불활성 가스하에서 60℃ 내지 100℃의 온도에서 밑에 깔려있는 수상과 함께 상기 유기용액을 점진적으로 가열하는 단계를 포함하는 다음 일반식을 갖는 것이 특징인 저급알킬 폴리실세스 퀴옥산의 제조방법.
  3. 위에서, R은 CH3또는 C2H5이며, n은 약 50 내지 약 10,000의 정수임.
  4. 제1항에서, 상기 저급알킬 폴리실세스퀴옥산은 메틸폴리실세스퀴옥산이며, 그의 중량 평균 분자량은 약 6.7X106내지 1.34X108인 것이 특징인 저급 알킬 폴리실세스 퀴옥산의 제조방법.
  5. 제1항에서, 상기 저급알킬 폴리실세스 퀴옥산은 에틸폴리실세스 퀴옥산이며, 그의 중량 평균 분자량은 약 6.7X103내지 1.34X106인 것이 특징인 저급 알킬 폴리실세스 퀴옥산의 제조방법.
  6. 다음 일반식을 갖는 실리레이티드 저급 알킬 폴리실세스 퀴옥산의 유기용액을 높이에서 계단차를 갖는 회로기판상에 바르는 단계와, 용매를 증발시키는 단계와, 그리고 상기 중합체의 표면을 평평하게 하도록 상기 실리레이티드 저급 알킬 폴리실세스 퀴옥산을 용융시키고 또한 그 중합체를 경화시키는 단계를 포함하는 표면이 평평한 절연층의 형성방법.
  8. 위에서, R은 CH3또는 C2H5이며, n은 약 50 내지 약 2,000의 정수임.
  9. 제4항에서, 상기 실리레이티드 저급알킬 폴리실세스 퀴옥산은 트리메틸시릴 단말그룹들을 갖는 메틸 폴리실세스 퀴옥산이며, 그의 중량 평균 분자량은 약 7.0 X 103내지 2.7X105인것이 특징인 표면이 평평한 절연층의 형성방법.
  10. 제4항에서, 상기 실리레이티드 저급알킬 폴리실세스 퀴옥산은 트리에틸 실리레이티드 단말그룹들을 갖는 에틸폴리실세스 퀴옥산이며, 그의 중량 평균 분자량은 약 8.4 X 103내지 3.2X105인것이 특징인 표면이 평평한 절연층의 형성방법.
  11. 제4항에서, 상기 절연층은 패시베이션 박막인 것이 특징인 표면이 평평한 절연층의 형성방법.
  12. 제4항에서, 상기 절연층은 층을 절연시키는 층으로서, 그위에 유기물질의 절연층을 가지며, 그에의해 2중층의 절연층이 형성되는 것이 특징인 표면이 평평한 절연층의 형성방법.
  13. 다음 일반식을 갖는 실리레이티드 오가노폴리실세스 퀴옥산의 유기용액을 높이에서 계단차를 갖는 회로기판상에 바르는 단계와, 용매를 증발시키는 단계와, 그리고 상기 중합체를 평평하게 하도록 상기 실리레이티드 오가노폴리실세스 퀴옥산을 용융시키고 또한 그 중합체를 경화시키는 단계를 포함하는 것이 특징인 표면이 평평한 절연층의 형성방법.
  15. 여기서, R은 알킬 또는 페닐그룹이며, n은 50 내지 약 2,000의 정수임.
  16. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850007985A 1984-11-01 1985-10-29 저급알킬 폴리실세스퀴옥산의 제조방법 KR880000853B1 (ko)

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Application Number Priority Date Filing Date Title
JP59-228885 1984-11-01
JP59228885A JPS61108628A (ja) 1984-11-01 1984-11-01 低級アルキルポリシルセスキオキサンの製法
JP60063359A JPS61224330A (ja) 1985-03-29 1985-03-29 パツシベ−シヨン膜の形成方法
JP60-063359 1985-03-29
JP60104035A JPS61292342A (ja) 1985-05-17 1985-05-17 多層配線構造体の製法
JP60-104035 1985-05-17

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DE3587442T2 (de) 1993-10-21
KR880000853B1 (ko) 1988-05-26
US4670299A (en) 1987-06-02
US4988514A (en) 1991-01-29
KR900005894B1 (ko) 1990-08-13
DE3587041T2 (de) 1993-05-19
DE3587442D1 (de) 1993-08-12
EP0198976A2 (en) 1986-10-29
DE3587041D1 (de) 1993-03-11
EP0406911B1 (en) 1993-07-07
EP0406911A1 (en) 1991-01-09
EP0198976B1 (en) 1993-01-27
EP0198976A3 (en) 1988-03-23
KR890011519A (ko) 1989-08-14

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