DE3587041T2 - Verfahren zur herstellung von isolatorschichten aus silylierten polysilsesquioxanen auf elektronischen gedruckten schaltung. - Google Patents

Verfahren zur herstellung von isolatorschichten aus silylierten polysilsesquioxanen auf elektronischen gedruckten schaltung.

Info

Publication number
DE3587041T2
DE3587041T2 DE19853587041 DE3587041T DE3587041T2 DE 3587041 T2 DE3587041 T2 DE 3587041T2 DE 19853587041 DE19853587041 DE 19853587041 DE 3587041 T DE3587041 T DE 3587041T DE 3587041 T2 DE3587041 T2 DE 3587041T2
Authority
DE
Germany
Prior art keywords
polysilesesquioxanes
silylated
printed circuit
insulator layers
electronic printed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19853587041
Other languages
English (en)
Other versions
DE3587041D1 (de
Inventor
Shun-Ichi Fukuyama
Yasuhiro Yoneda
Masashi Miyagawa
Kota Nishii
Azuma Matsuura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59228885A external-priority patent/JPS61108628A/ja
Priority claimed from JP60063359A external-priority patent/JPS61224330A/ja
Priority claimed from JP60104035A external-priority patent/JPS61292342A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3587041D1 publication Critical patent/DE3587041D1/de
Publication of DE3587041T2 publication Critical patent/DE3587041T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02137—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/481—Insulating layers on insulating parts, with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676—Single layer compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
DE19853587041 1984-11-01 1985-10-31 Verfahren zur herstellung von isolatorschichten aus silylierten polysilsesquioxanen auf elektronischen gedruckten schaltung. Expired - Fee Related DE3587041T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP59228885A JPS61108628A (ja) 1984-11-01 1984-11-01 低級アルキルポリシルセスキオキサンの製法
JP60063359A JPS61224330A (ja) 1985-03-29 1985-03-29 パツシベ−シヨン膜の形成方法
JP60104035A JPS61292342A (ja) 1985-05-17 1985-05-17 多層配線構造体の製法

Publications (2)

Publication Number Publication Date
DE3587041D1 DE3587041D1 (de) 1993-03-11
DE3587041T2 true DE3587041T2 (de) 1993-05-19

Family

ID=27298149

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19853587041 Expired - Fee Related DE3587041T2 (de) 1984-11-01 1985-10-31 Verfahren zur herstellung von isolatorschichten aus silylierten polysilsesquioxanen auf elektronischen gedruckten schaltung.
DE19853587442 Expired - Fee Related DE3587442T2 (de) 1984-11-01 1985-10-31 Verfahren zur Herstellung von Polysilsesquioxanen.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19853587442 Expired - Fee Related DE3587442T2 (de) 1984-11-01 1985-10-31 Verfahren zur Herstellung von Polysilsesquioxanen.

Country Status (4)

Country Link
US (2) US4670299A (de)
EP (2) EP0406911B1 (de)
KR (2) KR880000853B1 (de)
DE (2) DE3587041T2 (de)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4670299A (en) * 1984-11-01 1987-06-02 Fujitsu Limited Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board
JPS6243424A (ja) * 1985-08-20 1987-02-25 Shin Etsu Chem Co Ltd シルセスキオキサン乳濁液の製造方法
US4981530A (en) * 1988-11-28 1991-01-01 International Business Machines Corporation Planarizing ladder-type silsesquioxane polymer insulation layer
US5081202A (en) * 1989-11-17 1992-01-14 Mitsubishi Denki Kabushiki Kaisha High purity phenyl silicone ladder polymer and method for producing the same
FR2656617A1 (fr) * 1989-12-28 1991-07-05 Thomson Csf Procede de synthese de polysilsesquioxanes et applications des produits contenus.
US5043789A (en) * 1990-03-15 1991-08-27 International Business Machines Corporation Planarizing silsesquioxane copolymer coating
US5196251A (en) * 1991-04-30 1993-03-23 International Business Machines Corporation Ceramic substrate having a protective coating thereon and a method for protecting a ceramic substrate
JPH04353521A (ja) * 1991-05-30 1992-12-08 Toray Dow Corning Silicone Co Ltd オルガノポリシルセスキオキサンおよびその製造方法
US5145723A (en) * 1991-06-05 1992-09-08 Dow Corning Corporation Process for coating a substrate with silica
JP2923408B2 (ja) * 1992-12-21 1999-07-26 三菱電機株式会社 高純度シリコーンラダーポリマーの製造方法
US6423651B1 (en) 1993-12-27 2002-07-23 Kawasaki Steel Corporation Insulating film of semiconductor device and coating solution for forming insulating film and method of manufacturing insulating film
JP3078326B2 (ja) * 1994-03-11 2000-08-21 川崎製鉄株式会社 絶縁膜形成用塗布液およびその製造方法ならびに半導体装置用絶縁膜の形成方法およびこれを適用する半導体装置の製造方法
DE4446533C1 (de) * 1994-12-24 1996-03-14 Bosch Gmbh Robert Verfahren zur Herstellung von keramischen Verbundkörpern und deren Verwendung
CA2202653A1 (en) * 1995-08-15 1997-02-27 Akihito Saitoh Curable polymethyl silsesouioxane composition
US5942802A (en) * 1995-10-09 1999-08-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of producing the same
JP3635156B2 (ja) * 1996-08-19 2005-04-06 ダウ コーニング アジア株式会社 硬化性ポリメチルシルセスキオキサン組成物
JP3635171B2 (ja) * 1996-11-28 2005-04-06 ダウ コーニング アジア株式会社 ポリマー相溶性ポリメチルシルセスキオキサン
JP3635179B2 (ja) * 1997-02-24 2005-04-06 ダウ コーニング アジア株式会社 シリル化ポリメチルシルセスキオキサン、その製造方法、それを用いた組成物
JP3635181B2 (ja) * 1997-02-24 2005-04-06 ダウ コーニング アジア株式会社 剥離性硬化皮膜形成用組成物
JP3635180B2 (ja) * 1997-02-24 2005-04-06 ダウ コーニング アジア株式会社 シリル化ポリメチルシルセスキオキサン、その製造方法、それを用いた組成物
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
US6143855A (en) 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
KR100519510B1 (ko) * 1998-12-18 2006-01-27 주식회사 하이닉스반도체 실란과 방향족 화합물로 구성된 분자내 대환상 공간을 가지는 저유전율 화합물
US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
TR200101846T2 (tr) * 1998-12-22 2001-12-21 Firmenich Sa Yüzerme özellikleri olan gözenekli polimetilsilseskioksan
EP1190277B1 (de) * 1999-06-10 2009-10-07 AlliedSignal Inc. Spin-on-glass antireflektionsbeschichtungen aufweisender halbleiter für photolithographie
US6423772B1 (en) * 1999-07-16 2002-07-23 Institute Of Chemistry, Chinese Academy Of Sciences Organo-bridged ladderlike polysiloxane, tube-like organosilicon polymers, complexes thereof, and the method for producing the same
US6440560B1 (en) 1999-07-26 2002-08-27 International Business Machines Corporation Nanoparticles formed with rigid connector compounds
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6440550B1 (en) 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
KR20000063142A (ko) * 2000-02-17 2000-11-06 이응찬 폴리오르가노실세스키옥산 제조용 출발물질,폴리오르가노실세스키옥산 및 폴리오르가노실세스키옥산제조방법
US6759098B2 (en) 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US6368400B1 (en) * 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
KR100486622B1 (ko) * 2000-11-17 2005-05-03 차국헌 폴리메틸실세스퀴옥산 공중합체와 그 제조방법 및 이를이용한 저유전성 코팅막
US7456488B2 (en) * 2002-11-21 2008-11-25 Advanced Technology Materials, Inc. Porogen material
US7108771B2 (en) * 2001-12-13 2006-09-19 Advanced Technology Materials, Inc. Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films
US7423166B2 (en) * 2001-12-13 2008-09-09 Advanced Technology Materials, Inc. Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
JP4066332B2 (ja) * 2002-10-10 2008-03-26 日本エー・エス・エム株式会社 シリコンカーバイド膜の製造方法
US6991959B2 (en) * 2002-10-10 2006-01-31 Asm Japan K.K. Method of manufacturing silicon carbide film
US6849561B1 (en) * 2003-08-18 2005-02-01 Asm Japan K.K. Method of forming low-k films
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
ATE429796T1 (de) * 2004-05-19 2009-05-15 Koninkl Philips Electronics Nv Film zum gebrauch in haushaltsgeräten
DE102007004838A1 (de) * 2007-01-31 2008-08-07 Wacker Chemie Ag Verfahren zur Herstellung von Organopolysiloxanen
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
WO2009136486A1 (ja) * 2008-05-08 2009-11-12 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 化粧料
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
KR100987390B1 (ko) * 2010-03-05 2010-10-13 (주)우주아이텍 티에프티-엘씨디의 게이트 절연막 구조 및 그 제조방법
KR20110112641A (ko) * 2010-04-07 2011-10-13 한국과학기술연구원 광활성 그룹을 측쇄로 가지는 사다리 구조의 폴리실세스퀴옥산 및 이의 제조방법
KR101249798B1 (ko) * 2010-08-18 2013-04-03 한국과학기술연구원 선택적으로 구조가 제어된 폴리실세스퀴옥산의 제조방법 및 이로부터 제조된 폴리실세스퀴옥산
KR20140035324A (ko) 2010-12-22 2014-03-21 다우 코닝 코포레이션 다면체 올리고머 실세스퀴옥산 화합물을 형성하는 방법
US9333454B2 (en) 2011-01-21 2016-05-10 International Business Machines Corporation Silicone-based chemical filter and silicone-based chemical bath for removing sulfur contaminants
US8900491B2 (en) 2011-05-06 2014-12-02 International Business Machines Corporation Flame retardant filler
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9186641B2 (en) 2011-08-05 2015-11-17 International Business Machines Corporation Microcapsules adapted to rupture in a magnetic field to enable easy removal of one substrate from another for enhanced reworkability
US8741804B2 (en) 2011-10-28 2014-06-03 International Business Machines Corporation Microcapsules adapted to rupture in a magnetic field
US9716055B2 (en) 2012-06-13 2017-07-25 International Business Machines Corporation Thermal interface material (TIM) with thermally conductive integrated release layer
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
DE102022205830A1 (de) 2021-09-27 2023-03-30 Robert Bosch Gesellschaft mit beschränkter Haftung (Poly-)Silsesquioxan ausbildende Kompositzusammensetzung
WO2023046995A1 (de) 2021-09-27 2023-03-30 Robert Bosch Gmbh (poly-)silsesquioxan ausbildende kompositzusammensetzung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3017386A (en) * 1959-01-21 1962-01-16 Gen Electric Benzene soluble phenyl silsesquioxanes
US4349609A (en) * 1979-06-21 1982-09-14 Fujitsu Limited Electronic device having multilayer wiring structure
DE3065150D1 (en) * 1979-06-21 1983-11-10 Fujitsu Ltd Improved electronic device having multilayer wiring structure
DE3173441D1 (en) * 1980-08-26 1986-02-20 Japan Synthetic Rubber Co Ltd Ladder-like lower alkylpolysilsesquioxanes and process for their preparation
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition
EP0076656B1 (de) * 1981-10-03 1988-06-01 Japan Synthetic Rubber Co., Ltd. In Lösungsmitteln lösliche Organopolysilsesquioxane, Verfahren zu ihrer Herstellung, Zusammensetzungen und Halbleitervorrichtungen, die diese verwenden
JPS59109565A (ja) * 1982-12-16 1984-06-25 Fujitsu Ltd コ−テイング樹脂溶液およびその製造方法
DE3574418D1 (en) * 1984-05-30 1989-12-28 Fujitsu Ltd Pattern-forming material and its production and use
US4670299A (en) * 1984-11-01 1987-06-02 Fujitsu Limited Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board
US4719125A (en) * 1985-10-11 1988-01-12 Allied Corporation Cyclosilazane polymers as dielectric films in integrated circuit fabrication technology

Also Published As

Publication number Publication date
EP0406911A1 (de) 1991-01-09
DE3587442T2 (de) 1993-10-21
US4988514A (en) 1991-01-29
KR880000853B1 (ko) 1988-05-26
EP0198976A3 (en) 1988-03-23
KR860004072A (ko) 1986-06-16
KR890011519A (ko) 1989-08-14
US4670299A (en) 1987-06-02
KR900005894B1 (ko) 1990-08-13
EP0198976A2 (de) 1986-10-29
EP0406911B1 (de) 1993-07-07
EP0198976B1 (de) 1993-01-27
DE3587041D1 (de) 1993-03-11
DE3587442D1 (de) 1993-08-12

Similar Documents

Publication Publication Date Title
DE3587041T2 (de) Verfahren zur herstellung von isolatorschichten aus silylierten polysilsesquioxanen auf elektronischen gedruckten schaltung.
DE3483003D1 (de) Verfahren zur herstellung einer gedruckten leiterplatte.
DE3673359D1 (de) Verfahren zur herstellung von gedruckten schaltungsplatten.
DE3575512D1 (de) Verfahren zur herstellung einer keramischen leiterplatte.
DE3280409D1 (de) Mehrschichtige gedruckte leiterplatte und verfahren zu ihrer herstellung.
DE3686125D1 (de) Verfahren zur herstellung einer integrierten schaltung.
DE58907030D1 (de) Verfahren zur Herstellung von Leiterplatten.
DE68921732T2 (de) Verfahren zur Herstellung von gedruckten Mehrschicht-Leiterplatten.
DE3587100D1 (de) Verfahren zur herstellung einer auf der halbleiter-auf-isolator-technologie basierenden integrierten schaltung.
DE3785487D1 (de) Verfahren zur herstellung von traegern fuer gedruckte schaltungen.
DE3482545D1 (de) Gedruckte schaltungsplatte zur montierung eines elektronischen elementes und herstellungsverfahren dafuer.
DE69105625D1 (de) Verfahren zur Herstellung von gedruckten Mehrschicht-Leiterplatten.
DE69325936T2 (de) Verfahren zur Herstellung von Platten für gedruckte Schaltungen
DE68923417D1 (de) Verfahren zur herstellung von keramischen elektronischen schichtbauelementen.
DE3576430D1 (de) Verfahren zur herstellung von gegenseitig isolierten inseln aus monokristallinem silizium.
DE59710622D1 (de) Verfahren zur herstellung von mehrschichtlackierungen auf elektrisch leitfähigen substraten
ATA74086A (de) Verfahren zur herstellung von elektrisch leitenden strukturen auf nichtleitern
DE3769484D1 (de) Verfahren zur herstellung von gedruckten leiterplatten.
DE3580760D1 (de) Verfahren zur herstellung von buten-1 aus aethylen.
DE3585729D1 (de) Verfahren zur herstellung einer keramischen mehrschichtleiterplatte mit kupfermetallisierung.
DE59201356D1 (de) Verfahren zur Herstellung elektrisch leitender Verbindungen an Leiterplatten.
DE3484733D1 (de) Verfahren zur herstellung einer dielektrisch isolierten integrierten schaltungsanordnung.
DE316886T1 (de) Verfahren zur herstellung einer gedruckten schaltungsplatte.
DE69023816D1 (de) Verfahren zur Herstellung gedruckter Schaltungsplatten.
DE59106557D1 (de) Verfahren zur Herstellung von Leiterplatten.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee