KR860000714B1 - 집적회로 보호장치 - Google Patents

집적회로 보호장치 Download PDF

Info

Publication number
KR860000714B1
KR860000714B1 KR8200403A KR820000403A KR860000714B1 KR 860000714 B1 KR860000714 B1 KR 860000714B1 KR 8200403 A KR8200403 A KR 8200403A KR 820000403 A KR820000403 A KR 820000403A KR 860000714 B1 KR860000714 B1 KR 860000714B1
Authority
KR
South Korea
Prior art keywords
semiconductor
semiconductor region
semiconductor layer
region
conductivity type
Prior art date
Application number
KR8200403A
Other languages
English (en)
Korean (ko)
Other versions
KR830009654A (ko
Inventor
로날드 애버리 레슬리
Original Assignee
글렌 에이취. 브루스틀
알. 씨. 에이 코오포레이숀
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 글렌 에이취. 브루스틀, 알. 씨. 에이 코오포레이숀 filed Critical 글렌 에이취. 브루스틀
Publication of KR830009654A publication Critical patent/KR830009654A/ko
Application granted granted Critical
Publication of KR860000714B1 publication Critical patent/KR860000714B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08146—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in bipolar transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
KR8200403A 1981-01-30 1982-01-30 집적회로 보호장치 KR860000714B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US23035781A 1981-01-30 1981-01-30
US230357 1981-01-30
US32621981A 1981-12-01 1981-12-01
US326219 1981-12-01

Publications (2)

Publication Number Publication Date
KR830009654A KR830009654A (ko) 1983-12-22
KR860000714B1 true KR860000714B1 (ko) 1986-06-07

Family

ID=26924154

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8200403A KR860000714B1 (ko) 1981-01-30 1982-01-30 집적회로 보호장치

Country Status (8)

Country Link
KR (1) KR860000714B1 (es)
CA (1) CA1179406A (es)
DE (1) DE3201933A1 (es)
ES (2) ES508976A0 (es)
FI (1) FI74166C (es)
FR (1) FR2499325B1 (es)
GB (2) GB2092377B (es)
IT (1) IT1151504B (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948951A (ja) * 1982-09-14 1984-03-21 Toshiba Corp 半導体保護装置
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
US4562454A (en) * 1983-12-29 1985-12-31 Motorola, Inc. Electronic fuse for semiconductor devices
KR900008746B1 (ko) * 1986-11-19 1990-11-29 삼성전자 주식회사 접합 파괴장치 반도체장치
DE3835569A1 (de) * 1988-10-19 1990-05-03 Telefunken Electronic Gmbh Schutzanordnung
DE4004526C1 (es) * 1990-02-14 1991-09-05 Texas Instruments Deutschland Gmbh, 8050 Freising, De
US5224169A (en) * 1991-05-13 1993-06-29 Thomson Consumer Electronics, Inc. Protection arrangement for an audio output channel
US5235489A (en) * 1991-06-28 1993-08-10 Sgs-Thomson Microelectronics, Inc. Integrated solution to high voltage load dump conditions
USD794465S1 (en) 2015-08-28 2017-08-15 The Procter & Gamble Company Container
USD793867S1 (en) 2015-08-28 2017-08-08 The Procter & Gamble Company Container
USD793250S1 (en) 2015-09-07 2017-08-01 The Procter & Gamble Company Container

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
DE1901075A1 (de) * 1969-01-10 1970-08-13 Bosch Gmbh Robert Zweipoliges elektrisches Schaltelement
JPS55113358A (en) * 1979-02-23 1980-09-01 Hitachi Ltd Semiconductor device
GB2056808A (en) * 1979-08-17 1981-03-18 Lumenition Ltd Power transistor protection

Also Published As

Publication number Publication date
IT1151504B (it) 1986-12-24
FI74166C (fi) 1987-12-10
DE3201933C2 (es) 1987-01-08
ES520411A0 (es) 1984-03-01
GB2092377B (en) 1985-07-31
FR2499325B1 (fr) 1985-07-26
FR2499325A1 (fr) 1982-08-06
DE3201933A1 (de) 1982-08-12
ES8403245A1 (es) 1984-03-01
GB2092377A (en) 1982-08-11
GB2141301B (en) 1985-07-24
CA1179406A (en) 1984-12-11
GB2141301A (en) 1984-12-12
FI820197L (fi) 1982-07-31
ES8307416A1 (es) 1983-06-16
GB8413887D0 (en) 1984-07-04
FI74166B (fi) 1987-08-31
KR830009654A (ko) 1983-12-22
ES508976A0 (es) 1983-06-16
IT8219185A0 (it) 1982-01-19

Similar Documents

Publication Publication Date Title
US4567500A (en) Semiconductor structure for protecting integrated circuit devices
KR860000712B1 (ko) 집적회로 보호장치
US5077591A (en) Electrostatic discharge protection for semiconductor input devices
US4939616A (en) Circuit structure with enhanced electrostatic discharge protection
US5166089A (en) Method of making electrostatic discharge protection for semiconductor input devices
JPH08511662A (ja) 集積回路のためのｓｃｒ静電放電保護
JPH069018B2 (ja) 半導体構造
US7019338B1 (en) Subscriber interface protection circuit
EP0103306B1 (en) Semiconductor protective device
KR860000714B1 (ko) 집적회로 보호장치
EP1046193B1 (en) An integrated circuit provided with esd protection means
US4686602A (en) Protective circuit arrangement for protecting semiconductor components
GB2079085A (en) Transistor protection circuit
JPH07193261A (ja) 保護半導体コンポーネント
EP0564473B1 (en) Electrostatic discharge protection device
US6897546B1 (en) Semiconductor device including a functional element having a PN junction
US6784499B2 (en) Semiconductor device serving as a protecting element
JP2656045B2 (ja) 静電放電保護回路
US6781804B1 (en) Protection of the logic well of a component including an integrated MOS power transistor
JPS6211787B2 (es)
JPH05267588A (ja) 半導体保護装置
KR100192469B1 (ko) 이에스디 보호회로
US5166764A (en) Input protection device
JPS6242394B2 (es)
JP2901275B2 (ja) 半導体集積回路装置

Legal Events

Date Code Title Description
E902 Notification of reason for refusal
G160 Decision to publish patent application
O035 Opposition [patent]: request for opposition
O073 Decision to grant registration after opposition [patent]: decision to grant registration
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20010604

Year of fee payment: 16

EXPY Expiration of term