IT8219185A0 - Circuito di protezione per dispositivi a circuito integrato. - Google Patents

Circuito di protezione per dispositivi a circuito integrato.

Info

Publication number
IT8219185A0
IT8219185A0 IT8219185A IT1918582A IT8219185A0 IT 8219185 A0 IT8219185 A0 IT 8219185A0 IT 8219185 A IT8219185 A IT 8219185A IT 1918582 A IT1918582 A IT 1918582A IT 8219185 A0 IT8219185 A0 IT 8219185A0
Authority
IT
Italy
Prior art keywords
devices
integrated circuit
circuit
protection
protection circuit
Prior art date
Application number
IT8219185A
Other languages
English (en)
Other versions
IT1151504B (it
Inventor
Leslie Ronald Avery
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT8219185A0 publication Critical patent/IT8219185A0/it
Application granted granted Critical
Publication of IT1151504B publication Critical patent/IT1151504B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08146—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in bipolar transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
IT19185/82A 1981-01-30 1982-01-19 Circuito di protezione per dispositivi a circuito integrato IT1151504B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23035781A 1981-01-30 1981-01-30
US32621981A 1981-12-01 1981-12-01

Publications (2)

Publication Number Publication Date
IT8219185A0 true IT8219185A0 (it) 1982-01-19
IT1151504B IT1151504B (it) 1986-12-24

Family

ID=26924154

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19185/82A IT1151504B (it) 1981-01-30 1982-01-19 Circuito di protezione per dispositivi a circuito integrato

Country Status (8)

Country Link
KR (1) KR860000714B1 (it)
CA (1) CA1179406A (it)
DE (1) DE3201933C2 (it)
ES (2) ES508976A0 (it)
FI (1) FI74166C (it)
FR (1) FR2499325B1 (it)
GB (2) GB2092377B (it)
IT (1) IT1151504B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948951A (ja) * 1982-09-14 1984-03-21 Toshiba Corp 半導体保護装置
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
US4562454A (en) * 1983-12-29 1985-12-31 Motorola, Inc. Electronic fuse for semiconductor devices
KR900008746B1 (ko) * 1986-11-19 1990-11-29 삼성전자 주식회사 접합 파괴장치 반도체장치
DE3835569A1 (de) * 1988-10-19 1990-05-03 Telefunken Electronic Gmbh Schutzanordnung
DE4004526C1 (it) * 1990-02-14 1991-09-05 Texas Instruments Deutschland Gmbh, 8050 Freising, De
US5224169A (en) * 1991-05-13 1993-06-29 Thomson Consumer Electronics, Inc. Protection arrangement for an audio output channel
US5235489A (en) * 1991-06-28 1993-08-10 Sgs-Thomson Microelectronics, Inc. Integrated solution to high voltage load dump conditions
USD794465S1 (en) 2015-08-28 2017-08-15 The Procter & Gamble Company Container
USD793867S1 (en) 2015-08-28 2017-08-08 The Procter & Gamble Company Container
USD793250S1 (en) 2015-09-07 2017-08-01 The Procter & Gamble Company Container

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
DE1901075A1 (de) * 1969-01-10 1970-08-13 Bosch Gmbh Robert Zweipoliges elektrisches Schaltelement
JPS55113358A (en) * 1979-02-23 1980-09-01 Hitachi Ltd Semiconductor device
GB2056808A (en) * 1979-08-17 1981-03-18 Lumenition Ltd Power transistor protection

Also Published As

Publication number Publication date
DE3201933C2 (de) 1987-01-08
GB2141301A (en) 1984-12-12
ES8307416A1 (es) 1983-06-16
FR2499325A1 (fr) 1982-08-06
FI820197L (fi) 1982-07-31
GB2141301B (en) 1985-07-24
IT1151504B (it) 1986-12-24
FR2499325B1 (fr) 1985-07-26
FI74166B (fi) 1987-08-31
FI74166C (fi) 1987-12-10
ES508976A0 (es) 1983-06-16
CA1179406A (en) 1984-12-11
DE3201933A1 (de) 1982-08-12
ES520411A0 (es) 1984-03-01
GB8413887D0 (en) 1984-07-04
ES8403245A1 (es) 1984-03-01
GB2092377A (en) 1982-08-11
KR830009654A (ko) 1983-12-22
GB2092377B (en) 1985-07-31
KR860000714B1 (ko) 1986-06-07

Similar Documents

Publication Publication Date Title
IT8322946A0 (it) Circuito di protezione per dispositivi a circuito integrato.
IT8220203A0 (it) Circuito di protezione integrato.
IT8221971A0 (it) Dispositivo a circuito integrato a semiconduttori.
IT8221323A0 (it) Circuito di respirazione.
IT8124892A0 (it) Dispositivo a circuito integrato a semiconduttori.
IT8323550A0 (it) Circuito di interfaccia.
DE3270937D1 (en) Protection element for a semiconductor device
IT8124940A0 (it) Circuito integrato a semiconduttori.
IT8322983A0 (it) Procedimento per fabbricare un dispositivo a circuito integrato a semiconduttori.
IT8321325A0 (it) Circuito di completamento di chiamate.
IT8421908A0 (it) Dispositivo a circuito integrato a semiconduttore.
IT8224203A0 (it) Dispositivo a circuito integrato a semiconduttori.
IT8423066A0 (it) Circuito di protezione antidisturbi per circuiti integrati.
IT8020126A0 (it) Circuito integrato a semiconduttori.
IT8224720A0 (it) Circuito demultiplatore.
IT7924170A0 (it) Circuito di protezione.
IT8121938A0 (it) Circuito per la protezione di transistori.
IT8219185A0 (it) Circuito di protezione per dispositivi a circuito integrato.
IT8122142A0 (it) Dispositivo a circuito integrato a semiconduttori.
IT8223283A0 (it) Dispositivo a circuito integrato a semiconduttori.
IT1207305B (it) Diodo per circuito integrato monolitico.
NO156707C (no) Overspenningsbeskyttelsesanordning.
IT8124890A0 (it) Dispositivo a circuito integrato a semiconduttori.
IT8219677A0 (it) Dispositivo a semiconduttori.
IT1206117B (it) Circuito demultiplatore.

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19990128