FR2499325B1 - Circuit de protection pour dispositifs a circuits integres - Google Patents

Circuit de protection pour dispositifs a circuits integres

Info

Publication number
FR2499325B1
FR2499325B1 FR828201502A FR8201502A FR2499325B1 FR 2499325 B1 FR2499325 B1 FR 2499325B1 FR 828201502 A FR828201502 A FR 828201502A FR 8201502 A FR8201502 A FR 8201502A FR 2499325 B1 FR2499325 B1 FR 2499325B1
Authority
FR
France
Prior art keywords
devices
integrated circuits
protection circuit
protection
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR828201502A
Other languages
English (en)
Other versions
FR2499325A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2499325A1 publication Critical patent/FR2499325A1/fr
Application granted granted Critical
Publication of FR2499325B1 publication Critical patent/FR2499325B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08146—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in bipolar transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
FR828201502A 1981-01-30 1982-01-29 Circuit de protection pour dispositifs a circuits integres Expired FR2499325B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23035781A 1981-01-30 1981-01-30
US32621981A 1981-12-01 1981-12-01

Publications (2)

Publication Number Publication Date
FR2499325A1 FR2499325A1 (fr) 1982-08-06
FR2499325B1 true FR2499325B1 (fr) 1985-07-26

Family

ID=26924154

Family Applications (1)

Application Number Title Priority Date Filing Date
FR828201502A Expired FR2499325B1 (fr) 1981-01-30 1982-01-29 Circuit de protection pour dispositifs a circuits integres

Country Status (8)

Country Link
KR (1) KR860000714B1 (fr)
CA (1) CA1179406A (fr)
DE (1) DE3201933C2 (fr)
ES (2) ES8307416A1 (fr)
FI (1) FI74166C (fr)
FR (1) FR2499325B1 (fr)
GB (2) GB2092377B (fr)
IT (1) IT1151504B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948951A (ja) * 1982-09-14 1984-03-21 Toshiba Corp 半導体保護装置
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
US4562454A (en) * 1983-12-29 1985-12-31 Motorola, Inc. Electronic fuse for semiconductor devices
KR900008746B1 (ko) * 1986-11-19 1990-11-29 삼성전자 주식회사 접합 파괴장치 반도체장치
DE3835569A1 (de) * 1988-10-19 1990-05-03 Telefunken Electronic Gmbh Schutzanordnung
DE4004526C1 (fr) * 1990-02-14 1991-09-05 Texas Instruments Deutschland Gmbh, 8050 Freising, De
US5224169A (en) * 1991-05-13 1993-06-29 Thomson Consumer Electronics, Inc. Protection arrangement for an audio output channel
US5235489A (en) * 1991-06-28 1993-08-10 Sgs-Thomson Microelectronics, Inc. Integrated solution to high voltage load dump conditions
USD794465S1 (en) 2015-08-28 2017-08-15 The Procter & Gamble Company Container
USD793867S1 (en) 2015-08-28 2017-08-08 The Procter & Gamble Company Container
USD793250S1 (en) 2015-09-07 2017-08-01 The Procter & Gamble Company Container

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
DE1901075A1 (de) * 1969-01-10 1970-08-13 Bosch Gmbh Robert Zweipoliges elektrisches Schaltelement
JPS55113358A (en) * 1979-02-23 1980-09-01 Hitachi Ltd Semiconductor device
GB2056808A (en) * 1979-08-17 1981-03-18 Lumenition Ltd Power transistor protection

Also Published As

Publication number Publication date
ES508976A0 (es) 1983-06-16
FI74166B (fi) 1987-08-31
GB2141301B (en) 1985-07-24
FI74166C (fi) 1987-12-10
DE3201933A1 (de) 1982-08-12
KR830009654A (ko) 1983-12-22
CA1179406A (fr) 1984-12-11
GB2141301A (en) 1984-12-12
IT1151504B (it) 1986-12-24
DE3201933C2 (de) 1987-01-08
FR2499325A1 (fr) 1982-08-06
GB2092377B (en) 1985-07-31
GB2092377A (en) 1982-08-11
GB8413887D0 (en) 1984-07-04
ES520411A0 (es) 1984-03-01
ES8403245A1 (es) 1984-03-01
ES8307416A1 (es) 1983-06-16
FI820197L (fi) 1982-07-31
KR860000714B1 (ko) 1986-06-07
IT8219185A0 (it) 1982-01-19

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