FI74166C - Skyddskrets foer integrerade kretsanordningar. - Google Patents
Skyddskrets foer integrerade kretsanordningar. Download PDFInfo
- Publication number
- FI74166C FI74166C FI820197A FI820197A FI74166C FI 74166 C FI74166 C FI 74166C FI 820197 A FI820197 A FI 820197A FI 820197 A FI820197 A FI 820197A FI 74166 C FI74166 C FI 74166C
- Authority
- FI
- Finland
- Prior art keywords
- semiconductor
- region
- transistor
- conductivity type
- protection circuit
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08146—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in bipolar transistor switches
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23035781A | 1981-01-30 | 1981-01-30 | |
| US23035781 | 1981-01-30 | ||
| US32621981A | 1981-12-01 | 1981-12-01 | |
| US32621981 | 1981-12-01 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI820197L FI820197L (fi) | 1982-07-31 |
| FI74166B FI74166B (fi) | 1987-08-31 |
| FI74166C true FI74166C (fi) | 1987-12-10 |
Family
ID=26924154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI820197A FI74166C (fi) | 1981-01-30 | 1982-01-22 | Skyddskrets foer integrerade kretsanordningar. |
Country Status (8)
| Country | Link |
|---|---|
| KR (1) | KR860000714B1 (es) |
| CA (1) | CA1179406A (es) |
| DE (1) | DE3201933C2 (es) |
| ES (2) | ES8307416A1 (es) |
| FI (1) | FI74166C (es) |
| FR (1) | FR2499325B1 (es) |
| GB (2) | GB2092377B (es) |
| IT (1) | IT1151504B (es) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5948951A (ja) * | 1982-09-14 | 1984-03-21 | Toshiba Corp | 半導体保護装置 |
| US4484244A (en) * | 1982-09-22 | 1984-11-20 | Rca Corporation | Protection circuit for integrated circuit devices |
| US4562454A (en) * | 1983-12-29 | 1985-12-31 | Motorola, Inc. | Electronic fuse for semiconductor devices |
| KR900008746B1 (ko) * | 1986-11-19 | 1990-11-29 | 삼성전자 주식회사 | 접합 파괴장치 반도체장치 |
| DE3835569A1 (de) * | 1988-10-19 | 1990-05-03 | Telefunken Electronic Gmbh | Schutzanordnung |
| DE4004526C1 (es) * | 1990-02-14 | 1991-09-05 | Texas Instruments Deutschland Gmbh, 8050 Freising, De | |
| US5224169A (en) * | 1991-05-13 | 1993-06-29 | Thomson Consumer Electronics, Inc. | Protection arrangement for an audio output channel |
| US5235489A (en) * | 1991-06-28 | 1993-08-10 | Sgs-Thomson Microelectronics, Inc. | Integrated solution to high voltage load dump conditions |
| USD794465S1 (en) | 2015-08-28 | 2017-08-15 | The Procter & Gamble Company | Container |
| USD793867S1 (en) | 2015-08-28 | 2017-08-08 | The Procter & Gamble Company | Container |
| USD793250S1 (en) | 2015-09-07 | 2017-08-01 | The Procter & Gamble Company | Container |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3524113A (en) * | 1967-06-15 | 1970-08-11 | Ibm | Complementary pnp-npn transistors and fabrication method therefor |
| DE1901075A1 (de) * | 1969-01-10 | 1970-08-13 | Bosch Gmbh Robert | Zweipoliges elektrisches Schaltelement |
| JPS55113358A (en) * | 1979-02-23 | 1980-09-01 | Hitachi Ltd | Semiconductor device |
| GB2056808A (en) * | 1979-08-17 | 1981-03-18 | Lumenition Ltd | Power transistor protection |
-
1982
- 1982-01-19 IT IT19185/82A patent/IT1151504B/it active
- 1982-01-19 GB GB8201501A patent/GB2092377B/en not_active Expired
- 1982-01-22 FI FI820197A patent/FI74166C/fi not_active IP Right Cessation
- 1982-01-22 DE DE3201933A patent/DE3201933C2/de not_active Expired
- 1982-01-22 ES ES508976A patent/ES8307416A1/es not_active Expired
- 1982-01-29 CA CA000395261A patent/CA1179406A/en not_active Expired
- 1982-01-29 FR FR828201502A patent/FR2499325B1/fr not_active Expired
- 1982-01-30 KR KR8200403A patent/KR860000714B1/ko not_active IP Right Cessation
-
1983
- 1983-03-08 ES ES520411A patent/ES8403245A1/es not_active Expired
-
1984
- 1984-05-31 GB GB08413887A patent/GB2141301B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| ES508976A0 (es) | 1983-06-16 |
| FI74166B (fi) | 1987-08-31 |
| GB2141301B (en) | 1985-07-24 |
| DE3201933A1 (de) | 1982-08-12 |
| KR830009654A (ko) | 1983-12-22 |
| CA1179406A (en) | 1984-12-11 |
| GB2141301A (en) | 1984-12-12 |
| FR2499325B1 (fr) | 1985-07-26 |
| IT1151504B (it) | 1986-12-24 |
| DE3201933C2 (de) | 1987-01-08 |
| FR2499325A1 (fr) | 1982-08-06 |
| GB2092377B (en) | 1985-07-31 |
| GB2092377A (en) | 1982-08-11 |
| GB8413887D0 (en) | 1984-07-04 |
| ES520411A0 (es) | 1984-03-01 |
| ES8403245A1 (es) | 1984-03-01 |
| ES8307416A1 (es) | 1983-06-16 |
| FI820197L (fi) | 1982-07-31 |
| KR860000714B1 (ko) | 1986-06-07 |
| IT8219185A0 (it) | 1982-01-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM | Patent lapsed |
Owner name: RCA CORPORATION |