KR850007819A - 부식액 조성물 - Google Patents
부식액 조성물Info
- Publication number
- KR850007819A KR850007819A KR1019850002570A KR850002570A KR850007819A KR 850007819 A KR850007819 A KR 850007819A KR 1019850002570 A KR1019850002570 A KR 1019850002570A KR 850002570 A KR850002570 A KR 850002570A KR 850007819 A KR850007819 A KR 850007819A
- Authority
- KR
- South Korea
- Prior art keywords
- solution composition
- corrosive solution
- corrosive
- composition
- solution
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
- C04B41/5353—Wet etching, e.g. with etchants dissolved in organic solvents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US604,112 | 1984-04-26 | ||
US06/604,112 US4517106A (en) | 1984-04-26 | 1984-04-26 | Soluble surfactant additives for ammonium fluoride/hydrofluoric acid oxide etchant solutions |
Publications (2)
Publication Number | Publication Date |
---|---|
KR850007819A true KR850007819A (ko) | 1985-12-09 |
KR900001290B1 KR900001290B1 (ko) | 1990-03-05 |
Family
ID=24418225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850002570A KR900001290B1 (ko) | 1984-04-26 | 1985-04-17 | 부식액 조성물 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4517106A (ko) |
EP (1) | EP0159579A3 (ko) |
JP (1) | JP2547394B2 (ko) |
KR (1) | KR900001290B1 (ko) |
CA (1) | CA1241898A (ko) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4620934A (en) * | 1984-04-26 | 1986-11-04 | Allied Corporation | Soluble fluorinated cycloalkane sulfonate surfactant additives for NH4 |
US4761245A (en) * | 1987-01-27 | 1988-08-02 | Olin Corporation | Etching solutions containing ammonium fluoride and an alkylphenol polyglycidol ether surfactant |
US4761244A (en) * | 1987-01-27 | 1988-08-02 | Olin Corporation | Etching solutions containing ammonium fluoride and an alkyl polyaccharide surfactant |
US4863563A (en) * | 1987-01-27 | 1989-09-05 | Olin Corporation | Etching solutions containing ammonium fluoride and a nonionic alkyl amine glycidol adduct and method of etching |
WO1989011517A1 (en) * | 1988-05-16 | 1989-11-30 | Olin Corporation | Etching solutions containing anionic sulfate esters of alkylphenol polyglycidol ethers |
US5277835A (en) * | 1989-06-26 | 1994-01-11 | Hashimoto Chemical Industries Co., Ltd. | Surface treatment agent for fine surface treatment |
EP0405886B1 (en) * | 1989-06-26 | 1996-11-27 | Hashimoto Chemical Industries Co., Ltd. | Surface treatment agent for fine surface treatment |
US5164018A (en) * | 1992-03-18 | 1992-11-17 | Barcelona Jr Russell L | Water-spot remover containing hydrofluoric acid, ammonium fluoride, and an alcohol |
WO1994018696A1 (en) * | 1993-02-04 | 1994-08-18 | Daikin Industries, Ltd. | Wet-etching composition for semiconductors excellent in wettability |
US5320709A (en) * | 1993-02-24 | 1994-06-14 | Advanced Chemical Systems International Incorporated | Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution |
TW294831B (ko) * | 1995-04-26 | 1997-01-01 | Handotai Energy Kenkyusho Kk | |
KR0175009B1 (ko) * | 1995-07-28 | 1999-04-01 | 김광호 | 식각용액 및 이를 이용한 반도체 장치의 식각방법 |
WO1997018582A1 (fr) * | 1995-11-15 | 1997-05-22 | Daikin Industries, Ltd. | Solution de nettoyage de plaquettes et son procede de production |
JP3188843B2 (ja) * | 1996-08-28 | 2001-07-16 | ステラケミファ株式会社 | 微細加工表面処理剤及び微細加工表面処理方法 |
GB9621949D0 (en) * | 1996-10-22 | 1996-12-18 | Molloy Malachy J | Floor and tile anti-slip treatment |
KR100248113B1 (ko) * | 1997-01-21 | 2000-03-15 | 이기원 | 전자 표시 장치 및 기판용 세정 및 식각 조성물 |
US6284721B1 (en) | 1997-01-21 | 2001-09-04 | Ki Won Lee | Cleaning and etching compositions |
US6074951A (en) * | 1997-05-29 | 2000-06-13 | International Business Machines Corporation | Vapor phase etching of oxide masked by resist or masking material |
US5876879A (en) * | 1997-05-29 | 1999-03-02 | International Business Machines Corporation | Oxide layer patterned by vapor phase etching |
US5838055A (en) * | 1997-05-29 | 1998-11-17 | International Business Machines Corporation | Trench sidewall patterned by vapor phase etching |
US5939336A (en) * | 1998-08-21 | 1999-08-17 | Micron Technology, Inc. | Aqueous solutions of ammonium fluoride in propylene glycol and their use in the removal of etch residues from silicon substrates |
US6248704B1 (en) | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
ITMI20020178A1 (it) * | 2002-02-01 | 2003-08-01 | Ausimont Spa | Uso di additivi fluorurati nell'etching o polishing di circuiti integrati |
US6740571B2 (en) * | 2002-07-25 | 2004-05-25 | Mosel Vitelic, Inc. | Method of etching a dielectric material in the presence of polysilicon |
KR100634164B1 (ko) * | 2003-03-13 | 2006-10-16 | 삼성전자주식회사 | 반도체 제조 공정에 사용되는 세정액 |
AU2004271225B2 (en) * | 2003-09-09 | 2010-01-21 | Csg Solar Ag | Improved method of forming openings in an organic resin material |
CN100561668C (zh) * | 2003-09-09 | 2009-11-18 | Csg索拉尔有限公司 | 在有机树脂材料中形成开口的改进方法 |
US7446051B2 (en) * | 2003-09-09 | 2008-11-04 | Csg Solar Ag | Method of etching silicon |
WO2005024959A1 (en) * | 2003-09-09 | 2005-03-17 | Csg Solar, Ag | Adjustment of masks by re-flow |
KR100621541B1 (ko) * | 2004-02-06 | 2006-09-14 | 삼성전자주식회사 | 듀얼다마신 배선 형성방법 및 듀얼다마신 공정에서 보호막제거용 식각액 |
JP4776191B2 (ja) * | 2004-08-25 | 2011-09-21 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法 |
US7112289B2 (en) * | 2004-11-09 | 2006-09-26 | General Chemical Performance Products Llc | Etchants containing filterable surfactant |
US7241920B2 (en) * | 2004-11-09 | 2007-07-10 | General Chemical Performance Products, Llc | Filterable surfactant composition |
US7846349B2 (en) * | 2004-12-22 | 2010-12-07 | Applied Materials, Inc. | Solution for the selective removal of metal from aluminum substrates |
KR20080027244A (ko) * | 2005-05-13 | 2008-03-26 | 사켐,인코포레이티드 | 산화물의 선택적 습식 에칭 |
JP4677890B2 (ja) * | 2005-11-29 | 2011-04-27 | 信越半導体株式会社 | 埋め込み拡散エピタキシャルウエーハの製造方法および埋め込み拡散エピタキシャルウエーハ |
JP4816250B2 (ja) | 2006-05-25 | 2011-11-16 | 三菱瓦斯化学株式会社 | エッチング液組成物及びエッチング方法 |
US8153019B2 (en) * | 2007-08-06 | 2012-04-10 | Micron Technology, Inc. | Methods for substantially equalizing rates at which material is removed over an area of a structure or film that includes recesses or crevices |
US7872978B1 (en) * | 2008-04-18 | 2011-01-18 | Link—A—Media Devices Corporation | Obtaining parameters for minimizing an error event probability |
US8398779B2 (en) * | 2009-03-02 | 2013-03-19 | Applied Materials, Inc. | Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates |
KR20120032487A (ko) * | 2009-06-24 | 2012-04-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기판의 재생 처리 및 soi 기판의 제작 방법 |
US8278187B2 (en) * | 2009-06-24 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate by stepwise etching with at least two etching treatments |
JP2011228651A (ja) * | 2010-03-30 | 2011-11-10 | Semiconductor Energy Lab Co Ltd | 半導体基板の再生方法、再生半導体基板の作製方法、及びsoi基板の作製方法 |
CN108384548A (zh) * | 2018-02-24 | 2018-08-10 | 苏州晶瑞化学股份有限公司 | 一种非金属氧化物膜用缓冲蚀刻液 |
CN111471463B (zh) * | 2020-04-24 | 2021-10-19 | 湖北兴福电子材料有限公司 | 一种二氧化硅薄膜的蚀刻液 |
CN116144365B (zh) * | 2023-01-30 | 2023-10-03 | 江苏美阳电子材料有限公司 | 一种缓冲氧化腐蚀液及其制备方法和应用 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1228083A (ko) * | 1968-06-10 | 1971-04-15 | ||
US4055458A (en) * | 1975-08-07 | 1977-10-25 | Bayer Aktiengesellschaft | Etching glass with HF and fluorine-containing surfactant |
JPS5884974A (ja) * | 1981-11-13 | 1983-05-21 | Daikin Ind Ltd | エツチング剤組成物 |
JPS58188132A (ja) * | 1982-04-28 | 1983-11-02 | Toyo Soda Mfg Co Ltd | レジストと基板との密着性強化方法 |
JPS6039176A (ja) * | 1983-08-10 | 1985-02-28 | Daikin Ind Ltd | エッチング剤組成物 |
-
1984
- 1984-04-26 US US06/604,112 patent/US4517106A/en not_active Expired - Lifetime
-
1985
- 1985-03-28 CA CA000477790A patent/CA1241898A/en not_active Expired
- 1985-04-01 EP EP85103888A patent/EP0159579A3/en not_active Withdrawn
- 1985-04-17 KR KR1019850002570A patent/KR900001290B1/ko not_active IP Right Cessation
- 1985-04-24 JP JP60088465A patent/JP2547394B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0159579A2 (en) | 1985-10-30 |
JP2547394B2 (ja) | 1996-10-23 |
JPS60249332A (ja) | 1985-12-10 |
KR900001290B1 (ko) | 1990-03-05 |
US4517106A (en) | 1985-05-14 |
CA1241898A (en) | 1988-09-13 |
EP0159579A3 (en) | 1988-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR850007819A (ko) | 부식액 조성물 | |
BR8602690A (pt) | Composicao detergente | |
BR8505358A (pt) | Composicoes | |
BR8500872A (pt) | Composicao detergente | |
BR8602691A (pt) | Composicao detergente | |
BR8506598A (pt) | Composicao detergente | |
MX163529B (es) | Composicion quimicoluminiscente | |
RO96802A (ro) | Compozitie erbicida lichida | |
DK198586A (da) | Vaskemiddelsammensaetning | |
DK548285A (da) | Belaegningssammensaetning | |
DK17385D0 (da) | Oxadiazinonforbindelser | |
ATA90486A (de) | Waschmittelzusammensetzung | |
DK163662C (da) | N-chlorsulfonyl-2-oxindol-1-carboxamid-forbindelser | |
BR8506543A (pt) | Composicao de copoliester-carbonato | |
DE3564103D1 (de) | Novel alpha-aminoalkyl-alpha-alkylphenylacetonitriles | |
KR880700053A (ko) | 세제 조성물 | |
BR8505272A (pt) | Composicao detergente | |
FR2597117B1 (fr) | Composition anti-corrosion | |
PT80822A (fr) | Composition ocytocique | |
RO93277A (ro) | Compozitie erbicida sinergetica | |
RO91526A (ro) | Compozitie erbicida sinergetica | |
DK138585D0 (da) | Vaskemiddel | |
AT387591B (de) | Korrosionsinhibitorpraeparat | |
IT8423382A1 (it) | Composizione tricocosmetica | |
DK473284D0 (da) | Fiberholdig komposition |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20020128 Year of fee payment: 13 |
|
LAPS | Lapse due to unpaid annual fee |