KR850007148A - 고집적 밀도를 가능케하는 dram용 데이터 입출력 회로 - Google Patents

고집적 밀도를 가능케하는 dram용 데이터 입출력 회로

Info

Publication number
KR850007148A
KR850007148A KR1019850001317A KR850001317A KR850007148A KR 850007148 A KR850007148 A KR 850007148A KR 1019850001317 A KR1019850001317 A KR 1019850001317A KR 850001317 A KR850001317 A KR 850001317A KR 850007148 A KR850007148 A KR 850007148A
Authority
KR
South Korea
Prior art keywords
density
dram
data input
output circuit
enables high
Prior art date
Application number
KR1019850001317A
Other languages
English (en)
Other versions
KR910002963B1 (ko
Inventor
아쓰시 다까쓰기
Original Assignee
오기뎅기고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오기뎅기고오교 가부시끼가이샤 filed Critical 오기뎅기고오교 가부시끼가이샤
Publication of KR850007148A publication Critical patent/KR850007148A/ko
Application granted granted Critical
Publication of KR910002963B1 publication Critical patent/KR910002963B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR1019850001317A 1984-03-02 1985-03-02 고집적 밀도를 가능케하는 dram용 데이터 입출력 회로 KR910002963B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59038758A JPH0787037B2 (ja) 1984-03-02 1984-03-02 半導体メモリ回路のデータ書込方法
JP38758 1984-03-02

Publications (2)

Publication Number Publication Date
KR850007148A true KR850007148A (ko) 1985-10-30
KR910002963B1 KR910002963B1 (ko) 1991-05-11

Family

ID=12534183

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850001317A KR910002963B1 (ko) 1984-03-02 1985-03-02 고집적 밀도를 가능케하는 dram용 데이터 입출력 회로

Country Status (5)

Country Link
US (1) US4646272A (ko)
EP (1) EP0154314B1 (ko)
JP (1) JPH0787037B2 (ko)
KR (1) KR910002963B1 (ko)
DE (1) DE3582811D1 (ko)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212991A (ja) * 1985-07-10 1987-01-21 Fujitsu Ltd 半導体記憶装置
US5237532A (en) * 1986-06-30 1993-08-17 Kabushiki Kaisha Toshiba Serially-accessed type memory device for providing an interleaved data read operation
US4872161A (en) * 1987-03-19 1989-10-03 Matsushita Electric Industrial Co., Ltd. Bus circuit for eliminating undesired voltage amplitude
JPH0612609B2 (ja) * 1987-03-27 1994-02-16 株式会社東芝 半導体メモリ
JP2569554B2 (ja) * 1987-05-13 1997-01-08 三菱電機株式会社 ダイナミツクｒａｍ
JPH01128292A (ja) * 1987-11-13 1989-05-19 Sanyo Electric Co Ltd 半導体記憶回路
US4926384A (en) * 1988-01-25 1990-05-15 Visic, Incorporated Static ram with write recovery in selected portion of memory array
US4878198A (en) * 1988-01-25 1989-10-31 Visic, Incorporated Static ram with common data line equalization
JPH0283891A (ja) * 1988-09-20 1990-03-23 Fujitsu Ltd 半導体メモリ
US4954987A (en) * 1989-07-17 1990-09-04 Advanced Micro Devices, Inc. Interleaved sensing system for FIFO and burst-mode memories
JPH0834058B2 (ja) * 1990-03-19 1996-03-29 シャープ株式会社 半導体メモリ装置
JPH0438793A (ja) * 1990-06-04 1992-02-07 Toshiba Corp データ転送制御回路およびこれを用いたダイナミック型半導体記憶装置
US5305281A (en) * 1992-08-06 1994-04-19 National Semiconductor Corporation Multiple array memory device with staggered read/write for high speed data access
US5592436A (en) * 1992-08-28 1997-01-07 Kabushiki Kaisha Toshiba Data transfer system
JP2825401B2 (ja) * 1992-08-28 1998-11-18 株式会社東芝 半導体記憶装置
JPH06231576A (ja) * 1993-02-04 1994-08-19 Nec Corp 半導体記憶装置
KR100230230B1 (ko) * 1993-12-24 1999-11-15 윤종용 메모리 어드레싱 방법 및 장치
JPH08273368A (ja) * 1995-03-28 1996-10-18 Toshiba Microelectron Corp 半導体記憶装置
KR0167299B1 (ko) * 1995-12-21 1999-02-01 문정환 메모리의 컬럼스위치 인에이블신호 발생회로
JP3569417B2 (ja) * 1996-07-19 2004-09-22 株式会社ルネサステクノロジ 半導体メモリ
JPH11134224A (ja) * 1997-10-29 1999-05-21 Fujitsu Ltd 信号観測方法及び信号観測装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4330852A (en) * 1979-11-23 1982-05-18 Texas Instruments Incorporated Semiconductor read/write memory array having serial access
US4344156A (en) * 1980-10-10 1982-08-10 Inmos Corporation High speed data transfer for a semiconductor memory
JPS581891A (ja) * 1982-04-23 1983-01-07 Hitachi Ltd モノリシツク記憶装置
JPS58220294A (ja) * 1982-06-16 1983-12-21 Mitsubishi Electric Corp 半導体記憶装置
JPS5956284A (ja) * 1982-09-24 1984-03-31 Hitachi Micro Comput Eng Ltd 半導体記憶装置
JPS59116988A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 半導体メモリ装置
US4567579A (en) * 1983-07-08 1986-01-28 Texas Instruments Incorporated Dynamic memory with high speed nibble mode

Also Published As

Publication number Publication date
JPH0787037B2 (ja) 1995-09-20
DE3582811D1 (de) 1991-06-20
EP0154314A3 (en) 1988-05-04
US4646272A (en) 1987-02-24
JPS60185292A (ja) 1985-09-20
KR910002963B1 (ko) 1991-05-11
EP0154314B1 (en) 1991-05-15
EP0154314A2 (en) 1985-09-11

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