KR840002337A - 전기절연성 탄화규소 소결체(炭火硅素燒結體) - Google Patents

전기절연성 탄화규소 소결체(炭火硅素燒結體) Download PDF

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Publication number
KR840002337A
KR840002337A KR1019820005315A KR820005315A KR840002337A KR 840002337 A KR840002337 A KR 840002337A KR 1019820005315 A KR1019820005315 A KR 1019820005315A KR 820005315 A KR820005315 A KR 820005315A KR 840002337 A KR840002337 A KR 840002337A
Authority
KR
South Korea
Prior art keywords
compound
compounds
silicon carbide
electrically insulating
sintered body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019820005315A
Other languages
English (en)
Korean (ko)
Inventor
사또루 오기하라
Original Assignee
미다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미다 가쓰시게, 가부시기 가이샤 히다찌 세이사꾸쇼 filed Critical 미다 가쓰시게
Publication of KR840002337A publication Critical patent/KR840002337A/ko
Abandoned legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/575—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Inorganic Insulating Materials (AREA)
KR1019820005315A 1981-12-07 1982-11-25 전기절연성 탄화규소 소결체(炭火硅素燒結體) Abandoned KR840002337A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP197133 1981-12-07
JP56197133A JPS5899172A (ja) 1981-12-07 1981-12-07 電気絶縁基板

Publications (1)

Publication Number Publication Date
KR840002337A true KR840002337A (ko) 1984-06-25

Family

ID=16369295

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019820005315A Abandoned KR840002337A (ko) 1981-12-07 1982-11-25 전기절연성 탄화규소 소결체(炭火硅素燒結體)

Country Status (5)

Country Link
US (1) US4561010A (enExample)
EP (1) EP0081365B1 (enExample)
JP (1) JPS5899172A (enExample)
KR (1) KR840002337A (enExample)
DE (1) DE3273066D1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101442A (ja) * 1981-12-11 1983-06-16 Hitachi Ltd 電気的装置用基板
JPS5921579A (ja) * 1982-07-29 1984-02-03 大森　守 炭化珪素焼結成形体とその製造方法
JPS6066843A (ja) * 1983-09-22 1985-04-17 Hitachi Ltd 集積回路パツケ−ジ
EP0218796B1 (en) * 1985-08-16 1990-10-31 Dai-Ichi Seiko Co. Ltd. Semiconductor device comprising a plug-in-type package
JPS6271271A (ja) * 1985-09-24 1987-04-01 Sharp Corp 炭化珪素半導体の電極構造
US4701427A (en) * 1985-10-17 1987-10-20 Stemcor Corporation Sintered silicon carbide ceramic body of high electrical resistivity
DE3621450A1 (de) * 1986-06-26 1988-01-14 Kempten Elektroschmelz Gmbh Elektrisch isolierende substratwerkstoffe aus polykristallinem siliciumcarbid und verfahren zu ihrer herstellung durch isostatisches heisspressen
JPH0719898B2 (ja) * 1987-01-30 1995-03-06 日本電気株式会社 光電気集積回路
JP2772001B2 (ja) * 1988-11-28 1998-07-02 株式会社日立製作所 半導体装置
US5323025A (en) * 1989-05-18 1994-06-21 Murata Mfg. Co., Ltd. Pyroelectric IR-sensor having a low thermal conductive ceramic substrate
US5109268A (en) * 1989-12-29 1992-04-28 Sgs-Thomson Microelectronics, Inc. Rf transistor package and mounting pad
DE4110858A1 (de) * 1991-04-04 1992-10-08 Wild Heerbrugg Ag Zweiachsiger neigungsmesser
JPH05308107A (ja) * 1991-07-01 1993-11-19 Sumitomo Electric Ind Ltd 半導体装置及びその製作方法
JPH05136304A (ja) * 1991-11-14 1993-06-01 Mitsubishi Electric Corp 半導体モジユール及びそれを用いたパワー制御装置
JP2677735B2 (ja) * 1992-05-22 1997-11-17 三菱電機株式会社 混成集積回路装置
JP3662955B2 (ja) * 1994-09-16 2005-06-22 株式会社東芝 回路基板および回路基板の製造方法
US5897341A (en) * 1998-07-02 1999-04-27 Fujitsu Limited Diffusion bonded interconnect
WO2002018297A2 (de) * 2000-09-02 2002-03-07 Andreas Roosen Verfahren zur herstellung eines hochohmigen siliziumcarbid sinterkörpers
KR100477184B1 (ko) * 2002-05-17 2005-03-17 휴먼사이언스테크놀러지(주) 티타늄 이온박막을 갖는 탄화규소 소결체의 제조방법
JP2004228352A (ja) * 2003-01-23 2004-08-12 Mitsubishi Electric Corp 電力半導体装置
JP2005191148A (ja) * 2003-12-24 2005-07-14 Sanyo Electric Co Ltd 混成集積回路装置およびその製造方法
US7700202B2 (en) * 2006-02-16 2010-04-20 Alliant Techsystems Inc. Precursor formulation of a silicon carbide material
US7564129B2 (en) * 2007-03-30 2009-07-21 Nichicon Corporation Power semiconductor module, and power semiconductor device having the module mounted therein
US20100123140A1 (en) * 2008-11-20 2010-05-20 General Electric Company SiC SUBSTRATES, SEMICONDUCTOR DEVICES BASED UPON THE SAME AND METHODS FOR THEIR MANUFACTURE
DE102009000192A1 (de) * 2009-01-14 2010-07-15 Robert Bosch Gmbh Sinterwerkstoff, Sinterverbindung sowie Verfahren zum Herstellen eines Sinterverbindung
CN114582850A (zh) * 2020-11-30 2022-06-03 上海华为技术有限公司 一种电子元件和电子设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4172109A (en) * 1976-11-26 1979-10-23 The Carborundum Company Pressureless sintering beryllium containing silicon carbide powder composition
US4209474A (en) * 1977-08-31 1980-06-24 General Electric Company Process for preparing semiconducting silicon carbide sintered body
JPS5930671B2 (ja) * 1978-12-15 1984-07-28 株式会社日立製作所 焼結体製造用炭化珪素粉末組成物
JPS55116667A (en) * 1979-02-28 1980-09-08 Asahi Glass Co Ltd Silicon carbide sintered body
JPS55144472A (en) * 1979-04-24 1980-11-11 Atomic Energy Authority Uk Silicon carbide and its manufacture
JPS55143042A (en) * 1979-04-25 1980-11-08 Hitachi Ltd Semiconductor device
DE3064598D1 (en) * 1979-11-05 1983-09-22 Hitachi Ltd Electrically insulating substrate and a method of making such a substrate
DE3044162A1 (de) * 1980-11-24 1982-06-03 Annawerk Keramische Betriebe GmbH, 8633 Rödental Polykristalliner formkoerper aus siliziumkarbid und verfahren zu seiner herstellung
JPS57160970A (en) * 1981-03-27 1982-10-04 Omori Mamoru Silicon carbide sintered formed body and manufacture
JPS5891146A (ja) * 1981-11-24 1983-05-31 Kyocera Corp 炭化珪素質焼結体

Also Published As

Publication number Publication date
EP0081365A1 (en) 1983-06-15
US4561010A (en) 1985-12-24
JPS5899172A (ja) 1983-06-13
EP0081365B1 (en) 1986-09-03
JPS631267B2 (enExample) 1988-01-12
DE3273066D1 (en) 1986-10-09

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Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1902 Submission of document of abandonment before decision of registration

St.27 status event code: N-1-6-B10-B11-nap-PC1902

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000