KR830005718A - 마무리 된 웨이퍼들의 평탄성을 개량하는 방법 및 장치 - Google Patents

마무리 된 웨이퍼들의 평탄성을 개량하는 방법 및 장치 Download PDF

Info

Publication number
KR830005718A
KR830005718A KR1019810001005A KR810001005A KR830005718A KR 830005718 A KR830005718 A KR 830005718A KR 1019810001005 A KR1019810001005 A KR 1019810001005A KR 810001005 A KR810001005 A KR 810001005A KR 830005718 A KR830005718 A KR 830005718A
Authority
KR
South Korea
Prior art keywords
carrier
wafers
turntable
wafer
flatness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019810001005A
Other languages
English (en)
Other versions
KR840002114B1 (ko
Inventor
제롬 왈쉬 로버트
Original Assignee
존 엘머 마우리
몬산토 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 존 엘머 마우리, 몬산토 캄파니 filed Critical 존 엘머 마우리
Publication of KR830005718A publication Critical patent/KR830005718A/ko
Application granted granted Critical
Publication of KR840002114B1 publication Critical patent/KR840002114B1/ko
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/015Temperature control
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/02Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

내용 없음

Description

연마된 웨이퍼의 평탄성을 개량 하는방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 캐리어(carrier)에 장착된 웨이퍼(wafer)를 연마하는 방법을 수행하는 장치와 턴 테이블(Turn-table)치 마무리헤드(Head)에 대한 압력판 조합을 개략적으로 도시하는 대표적인 종래기술의 횡단면도.
제2도는 제1도의 선 2-2를 따라 취한 웨이퍼가 장착된 캐리어의 수직단면도.
제3도는 마무리패드(pad)를 지지하는 수냉된 굽어진 턴테이블과 웨이퍼와의 횡단 비평면 접촉을 도시하는 제1도에 도시된 장치의 확대단면도.
제4도는 본 발명에 따른 장치의 제 3도와 유사한 단면도.

Claims (14)

  1. 마무리된 웨이퍼 평탄성을 개량하는 방법에 있어서, 변형가능한 얇은 디스크 웨이퍼 캐리어 첫번째 표면을 회전가능한 탄성 패드 압력판 표면위에 진공장치하며, 상기 캐리어 두번째 표면은 그곳에 장치된 적어도 하나의 얇은 웨이퍼를 가지고, 탄성 패드 압력판 표면을 향해 안쪽으로 블록형태로 웨이퍼 캐리어를 변형하며, 오목캐리어 두번째 표면은 웨이퍼를 이송하고, 웨이퍼에 장치된 상기 오목캐리어 표면을 턴테이블에 장치된 회전가능한 마무리 표면과 접촉시키고, 턴 테이블은 가장자리 표면굽힘에 축으로 나타나며, 굽힘은 웨이퍼들의 접촉표면으로부터 멀어지고 회전가능하게 웨이퍼를 마무리하는 것을 포함하는 것으로 특징되는 마무리된 웨이퍼들의 평탄성을 개량하는 방법 및 장치.
  2. 1항에 따른 방법에 있어서, 마무리가 턴 테이블의 회전과 회전 가능한 압력판과 오목 캐리어 장치된 웨이퍼들의 마찰구동회전을 통해 이뤄지는 것을 특징으로 하는 마무리된 웨이퍼들의 평탄성을 개량하는 방법 및 장치.
  3. 1항에 따른 방법에 있어서, 턴테이블과 압력판 모두가 독립적으로 회전가능하게 구동되는 것으로 특징되는 마무리된 웨이퍼들의 평탄성을 개량하는 방법 및 장치.
  4. 1항에 따른 방법에 있어서, 변형 가능한 얇은 디스크 웨이퍼 캐리어가 캐리어 디스크 첫번째 표면과 압력판 사이에 놓이며 캐리어 디스크의 변형 제어를 증진시키는 진공실을 정의하는 탄성량과의 접촉을 통해 압력판에 진공장치되는 것으로 특징되는 마무리된 웨이퍼들의 평탄성을 개량하는 방법 및 장치.
  5. 4항에 따른 방법에 있어서, 압력판, 캐리어 및 웨이퍼들이 턴테이블 마무리 표면위에 위치되며 캐리어판이 회전의 축으로부터 가장자리까지 아래쪽으로 굽어지는 턴테이블을 향해 두번째 표면 오목으로 변형되는 것을 특징되는 마무리된 웨이퍼들의 평탄성을 개량하는 방법 및 장치.
  6. 1항에 따른 방법에 있어서, 웨이퍼들이 약 200에서 약 750㎛의 두께를 갖는 반도체 물질로 구성되는 것을 특징되는 마무리된 웨이퍼들의 평탄성을 개량하는 방법 및 장치.
  7. 6항에 따른 방법에 있어서, 물질이 실리콘인 것으로 특징되는 마무리된 웨이퍼들의 평탄성을 개량하는 방법 및 장치.
  8. 7항에 따른 방법에 있어서, 마무리된 웨이퍼가 약 2.5㎛보다 작은 방사상 경사를 갖는 것으로 특징되는 마무리된 웨이퍼들의 평탄성을 개량하는 방법 및 장치.
  9. 8항에 따른 방법에 있어서, 웨이퍼 평탄성 평균이 약 1.5㎛보다 작은 것으로 특징되는 마무리된 웨이퍼들의 평탄성을 개량하는 방법 및 장치.
  10. 마무리된 웨이퍼 평탄성을 개량하는 장치에 있어서, 회전가능한 압력판에 장치된 탄성링에 장치된 얇은 변형 가능한 캐리어 디스크, 실을 형성하는 상기 압력판과 탄성링과 첫번째 캐리어 표면, 캐리어 디스크를 실을 향해 안쪽으로 블록형태로 변형하기 위한 진공장치와 연결된 상기실, 오목한 두번째 표면에 장치된 웨이퍼들을 갖는 상기 변형된 캐리어, 턴테이블의 첫번째 표면과 마무리용 패드로부터 열을 뺏는 내부 냉각장치를 갖는 마무리용 패드 장치된 턴테이블과 회전할 수 있게 접촉할 수 있는 상기 웨이퍼들, 두번째 표면을 향해 턴테이블의 열적굽힘의 결과로 마무리중에 첫번째 표면보다 더 냉각된 턴테이블 두번째 표면을 포함하는 것으로 특징되는 마무리된 웨이퍼들의 평탄성을 개량하는 방법 및 장치.
  11. 10항에 따른 장치에 있어서, 웨이퍼들이 캐리어의 오목표면 왁스장치되는 것으로 특징된 마무리된 웨이퍼들의 평탄성을 개량하는 방법 및 장치.
  12. 10항에 따른 장치에 있어서, 회전가능한 턴테이블이 웨이퍼 장치된 캐리어, 압력판의 마찰구동회전을 제공하는 것으로 특징되는 마무리된 웨이퍼들의 평탄성을 개량하는 방법 및 장치.
  13. 10항에 따른 장치에 있어서, 웨이퍼들이 독립된 압력판 회전구동장치를 통해 회전되는 것으로 특징된 마무리된 웨이퍼들의 평탄성을 개량하는 방법 및 장치.
  14. 10항에 따른 장치에 있어서, 복수개의 압력판, 캐리어장치는 턴테이블과 접촉할 수 있으며, 다수의 장치는 턴테이블의 각각의 반경 크기에서 턴테이블과 접촉할 수 있는 것으로 특징된 마무리된 웨이퍼들의 평탄성을 개량하는 방법 및 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019810001005A 1980-03-27 1981-03-27 연마된 웨이퍼의 평탄성 개량 장치 Expired KR840002114B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US134.714 1980-03-27
US06/134,714 US4313284A (en) 1980-03-27 1980-03-27 Apparatus for improving flatness of polished wafers
US134714 2002-04-29

Publications (2)

Publication Number Publication Date
KR830005718A true KR830005718A (ko) 1983-09-09
KR840002114B1 KR840002114B1 (ko) 1984-11-15

Family

ID=22464634

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019810001005A Expired KR840002114B1 (ko) 1980-03-27 1981-03-27 연마된 웨이퍼의 평탄성 개량 장치

Country Status (6)

Country Link
US (1) US4313284A (ko)
JP (1) JPS5720436A (ko)
KR (1) KR840002114B1 (ko)
DE (1) DE3112019A1 (ko)
GB (1) GB2072550B (ko)
IT (1) IT1137514B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114346788A (zh) * 2020-09-28 2022-04-15 莱玛特·沃尔特斯有限公司 双面或单面加工机

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4450652A (en) * 1981-09-04 1984-05-29 Monsanto Company Temperature control for wafer polishing
US4680893A (en) * 1985-09-23 1987-07-21 Motorola, Inc. Apparatus for polishing semiconductor wafers
US4918870A (en) * 1986-05-16 1990-04-24 Siltec Corporation Floating subcarriers for wafer polishing apparatus
US4811522A (en) * 1987-03-23 1989-03-14 Gill Jr Gerald L Counterbalanced polishing apparatus
JP2628308B2 (ja) * 1987-08-26 1997-07-09 スピ−ドファム株式会社 平面研磨装置用加圧ヘッド
JP2612012B2 (ja) * 1987-11-16 1997-05-21 三菱マテリアル株式会社 研磨装置
JPH01159171A (ja) * 1987-12-15 1989-06-22 Toshiba Corp 研磨定盤
US5357716A (en) * 1988-10-20 1994-10-25 Olympus Optical Company Limited Holding device for holding optical element to be ground
US5399528A (en) * 1989-06-01 1995-03-21 Leibovitz; Jacques Multi-layer fabrication in integrated circuit systems
US5291692A (en) * 1989-09-14 1994-03-08 Olympus Optical Company Limited Polishing work holder
US5104828A (en) * 1990-03-01 1992-04-14 Intel Corporation Method of planarizing a dielectric formed over a semiconductor substrate
US5127196A (en) * 1990-03-01 1992-07-07 Intel Corporation Apparatus for planarizing a dielectric formed over a semiconductor substrate
US5036630A (en) * 1990-04-13 1991-08-06 International Business Machines Corporation Radial uniformity control of semiconductor wafer polishing
GB9008531D0 (en) * 1990-04-17 1990-06-13 Logitech Ltd Monitoring and control of surface curvature
USRE36890E (en) * 1990-07-31 2000-10-03 Motorola, Inc. Gradient chuck method for wafer bonding employing a convex pressure
FR2677293A1 (fr) * 1991-06-06 1992-12-11 Commissariat Energie Atomique Machine de polissage a tete support de plaquettes perfectionnee.
US5267418A (en) * 1992-05-27 1993-12-07 International Business Machines Corporation Confined water fixture for holding wafers undergoing chemical-mechanical polishing
TW227540B (ko) * 1992-06-15 1994-08-01 Philips Electronics Nv
EP0579298B1 (en) * 1992-06-15 1997-09-03 Koninklijke Philips Electronics N.V. Method of manufacturing a plate having a plane main surface, method of manufacturing a plate having parallel main surfaces, and device suitable for implementing said methods
JP2655975B2 (ja) * 1992-09-18 1997-09-24 三菱マテリアル株式会社 ウェーハ研磨装置
US5377451A (en) * 1993-02-23 1995-01-03 Memc Electronic Materials, Inc. Wafer polishing apparatus and method
US5329734A (en) * 1993-04-30 1994-07-19 Motorola, Inc. Polishing pads used to chemical-mechanical polish a semiconductor substrate
US5435772A (en) * 1993-04-30 1995-07-25 Motorola, Inc. Method of polishing a semiconductor substrate
JP3311116B2 (ja) * 1993-10-28 2002-08-05 株式会社東芝 半導体製造装置
US5733175A (en) * 1994-04-25 1998-03-31 Leach; Michael A. Polishing a workpiece using equal velocity at all points overlapping a polisher
US5605487A (en) * 1994-05-13 1997-02-25 Memc Electric Materials, Inc. Semiconductor wafer polishing appartus and method
US5607341A (en) * 1994-08-08 1997-03-04 Leach; Michael A. Method and structure for polishing a wafer during manufacture of integrated circuits
US5651724A (en) * 1994-09-08 1997-07-29 Ebara Corporation Method and apparatus for polishing workpiece
US5908530A (en) * 1995-05-18 1999-06-01 Obsidian, Inc. Apparatus for chemical mechanical polishing
US5658185A (en) * 1995-10-25 1997-08-19 International Business Machines Corporation Chemical-mechanical polishing apparatus with slurry removal system and method
US5851140A (en) * 1997-02-13 1998-12-22 Integrated Process Equipment Corp. Semiconductor wafer polishing apparatus with a flexible carrier plate
US6056632A (en) * 1997-02-13 2000-05-02 Speedfam-Ipec Corp. Semiconductor wafer polishing apparatus with a variable polishing force wafer carrier head
JPH10235552A (ja) * 1997-02-24 1998-09-08 Ebara Corp ポリッシング装置
US6244946B1 (en) 1997-04-08 2001-06-12 Lam Research Corporation Polishing head with removable subcarrier
US6425812B1 (en) 1997-04-08 2002-07-30 Lam Research Corporation Polishing head for chemical mechanical polishing using linear planarization technology
US5885135A (en) * 1997-04-23 1999-03-23 International Business Machines Corporation CMP wafer carrier for preferential polishing of a wafer
US6110025A (en) * 1997-05-07 2000-08-29 Obsidian, Inc. Containment ring for substrate carrier apparatus
US6116990A (en) * 1997-07-25 2000-09-12 Applied Materials, Inc. Adjustable low profile gimbal system for chemical mechanical polishing
US6113479A (en) * 1997-07-25 2000-09-05 Obsidian, Inc. Wafer carrier for chemical mechanical planarization polishing
US5931719A (en) * 1997-08-25 1999-08-03 Lsi Logic Corporation Method and apparatus for using pressure differentials through a polishing pad to improve performance in chemical mechanical polishing
US5975998A (en) * 1997-09-26 1999-11-02 Memc Electronic Materials , Inc. Wafer processing apparatus
US5948699A (en) * 1997-11-21 1999-09-07 Sibond, L.L.C. Wafer backing insert for free mount semiconductor polishing apparatus and process
US6531397B1 (en) 1998-01-09 2003-03-11 Lsi Logic Corporation Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing
US5985094A (en) * 1998-05-12 1999-11-16 Speedfam-Ipec Corporation Semiconductor wafer carrier
US6106379A (en) * 1998-05-12 2000-08-22 Speedfam-Ipec Corporation Semiconductor wafer carrier with automatic ring extension
US6129610A (en) * 1998-08-14 2000-10-10 International Business Machines Corporation Polish pressure modulation in CMP to preferentially polish raised features
US6187681B1 (en) * 1998-10-14 2001-02-13 Micron Technology, Inc. Method and apparatus for planarization of a substrate
JP3537688B2 (ja) * 1998-11-24 2004-06-14 富士通株式会社 磁気ヘッドの加工方法
DE60133231T2 (de) * 2000-01-31 2008-07-03 Shin-Etsu Handotai Co., Ltd. Polierverfahren
US6446948B1 (en) 2000-03-27 2002-09-10 International Business Machines Corporation Vacuum chuck for reducing distortion of semiconductor and GMR head wafers during processing
US6666756B1 (en) 2000-03-31 2003-12-23 Lam Research Corporation Wafer carrier head assembly
US6488565B1 (en) 2000-08-29 2002-12-03 Applied Materials, Inc. Apparatus for chemical mechanical planarization having nested load cups
US6755723B1 (en) 2000-09-29 2004-06-29 Lam Research Corporation Polishing head assembly
DE10054159A1 (de) * 2000-11-02 2002-05-16 Wacker Siltronic Halbleitermat Verfahren zur Montage von Halbleiterscheiben
US6394886B1 (en) * 2001-10-10 2002-05-28 Taiwan Semiconductor Manufacturing Company, Ltd Conformal disk holder for CMP pad conditioner
US7214548B2 (en) * 2004-08-30 2007-05-08 International Business Machines Corporation Apparatus and method for flattening a warped substrate
JP4902433B2 (ja) * 2007-06-13 2012-03-21 株式会社荏原製作所 研磨装置の研磨面加熱、冷却装置
JP5038259B2 (ja) * 2008-08-26 2012-10-03 株式会社日立ハイテクノロジーズ クリーニング装置およびクリーニング方法
US20100112905A1 (en) * 2008-10-30 2010-05-06 Leonard Borucki Wafer head template for chemical mechanical polishing and a method for its use
JP5266507B2 (ja) * 2011-02-28 2013-08-21 アキム株式会社 部品搬送装置
JP6161999B2 (ja) * 2013-08-27 2017-07-12 株式会社荏原製作所 研磨方法および研磨装置
CN105437076A (zh) * 2014-08-27 2016-03-30 中芯国际集成电路制造(上海)有限公司 晶片轮廓实时控制方法和系统
JP6592355B2 (ja) * 2015-01-30 2019-10-16 株式会社荏原製作所 連結機構および基板研磨装置
JP6376085B2 (ja) * 2015-09-03 2018-08-22 信越半導体株式会社 研磨方法及び研磨装置
JP6312229B1 (ja) * 2017-06-12 2018-04-18 信越半導体株式会社 研磨方法及び研磨装置
CN118366915B (zh) * 2024-05-14 2024-12-06 山东有研艾斯半导体材料有限公司 一种改善晶圆单面抛光后表面形貌及表面平整度的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2241478A (en) * 1940-04-17 1941-05-13 Joseph F Remington Skiving machine
US2405417A (en) * 1943-07-09 1946-08-06 Galvin Mfg Corp Apparatus for grinding the surfaces of small objects
US2869294A (en) * 1957-07-02 1959-01-20 Abrading Systems Company Lapping machine
US3170273A (en) * 1963-01-10 1965-02-23 Monsanto Co Process for polishing semiconductor materials
US3475867A (en) * 1966-12-20 1969-11-04 Monsanto Co Processing of semiconductor wafers
US3611654A (en) * 1969-09-30 1971-10-12 Alliance Tool & Die Corp Polishing machine or similar abrading apparatus
FR2097216A5 (ko) * 1970-05-27 1972-03-03 Anvar
US3747282A (en) * 1971-11-29 1973-07-24 E Katzke Apparatus for polishing wafers
US3977130A (en) * 1975-05-12 1976-08-31 Semimetals, Inc. Removal-compensating polishing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114346788A (zh) * 2020-09-28 2022-04-15 莱玛特·沃尔特斯有限公司 双面或单面加工机

Also Published As

Publication number Publication date
US4313284A (en) 1982-02-02
DE3112019C2 (ko) 1992-06-11
IT8120742A0 (it) 1981-03-26
IT1137514B (it) 1986-09-10
KR840002114B1 (ko) 1984-11-15
GB2072550A (en) 1981-10-07
JPH0112631B2 (ko) 1989-03-01
JPS5720436A (en) 1982-02-02
GB2072550B (en) 1983-07-27
DE3112019A1 (de) 1982-01-28

Similar Documents

Publication Publication Date Title
KR830005718A (ko) 마무리 된 웨이퍼들의 평탄성을 개량하는 방법 및 장치
US6220944B1 (en) Carrier head to apply pressure to and retain a substrate
US5607341A (en) Method and structure for polishing a wafer during manufacture of integrated circuits
KR20180111612A (ko) 진공 흡착 패드 및 기판 보유 지지 장치
JPH01216768A (ja) 半導体基板の研磨方法及びその装置
KR102523271B1 (ko) 연마 패드, 연마 장치 및 실리콘 웨이퍼를 연마하기 위한 방법
CN115070606A (zh) 一种用于对硅片进行抛光的抛光垫和抛光设备
EP0860238A2 (en) Polishing apparatus
US3924361A (en) Method of shaping semiconductor workpieces
JP2001358098A (ja) 化学的機械的研磨装置の研磨ヘッド
TWI840128B (zh) 定盤、拋光設備和拋光方法
JPH07171757A (ja) ウエーハ研磨装置
JPS632656A (ja) ウエハ研磨方法及びそれに用いるウエハ研磨基板
JPH10217108A (ja) ウェーハ研磨装置
JPH09225812A (ja) 半導体基板の研磨方法及びその装置
TWI855562B (zh) 定盤、拋光設備和拋光方法
JPH1094958A (ja) 基板研磨方法及びこの実施に用いる研磨装置
JP4169432B2 (ja) 被加工物の保持具、研磨装置及び研磨方法
JPH10113859A (ja) 半導体ウエハの化学的機械的研磨方法
KR20040056634A (ko) 화학적 기계적 연마 장치
JPH10315119A (ja) 研磨布
JPH07124862A (ja) ウエーハ研磨装置
KR100649007B1 (ko) 화학 기계적 연마 장치 및 이를 만드는 방법
JPH07164312A (ja) ウエハ研磨装置
JP3992307B2 (ja) 薄板の研磨加工用のプレートおよびその製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19810327

PG1501 Laying open of application
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19840423

Patent event code: PE09021S01D

PG1605 Publication of application before grant of patent
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19850201

PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 19850305

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 19850305

End annual number: 3

Start annual number: 1

PR1001 Payment of annual fee

Payment date: 19870916

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 19880130

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 19890909

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 19901005

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 19910930

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 19920929

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 19930922

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 19941103

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 19951110

Start annual number: 12

End annual number: 12

PC1801 Expiration of term
PR1001 Payment of annual fee

Payment date: 19961108

Start annual number: 13

End annual number: 13