KR20260042521A - 감광성 수지 조성물, 함불소 수지 경화물의 제조 방법, 함불소 수지, 함불소 수지막, 뱅크 및 표시 소자 - Google Patents

감광성 수지 조성물, 함불소 수지 경화물의 제조 방법, 함불소 수지, 함불소 수지막, 뱅크 및 표시 소자

Info

Publication number
KR20260042521A
KR20260042521A KR1020267004698A KR20267004698A KR20260042521A KR 20260042521 A KR20260042521 A KR 20260042521A KR 1020267004698 A KR1020267004698 A KR 1020267004698A KR 20267004698 A KR20267004698 A KR 20267004698A KR 20260042521 A KR20260042521 A KR 20260042521A
Authority
KR
South Korea
Prior art keywords
group
fluorine
containing resin
repeating unit
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020267004698A
Other languages
English (en)
Korean (ko)
Inventor
유즈루 가네코
사토루 미야자와
게이코 사사키
아스카 사노
유스케 노무라
Original Assignee
샌트랄 글래스 컴퍼니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 샌트랄 글래스 컴퍼니 리미티드 filed Critical 샌트랄 글래스 컴퍼니 리미티드
Publication of KR20260042521A publication Critical patent/KR20260042521A/ko
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18Monomers containing fluorine
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/22Esters containing halogen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F14/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F14/18Monomers containing fluorine
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/04Polymerisation in solution
    • C08F2/06Organic solvent
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/46Polymerisation initiated by wave energy or particle radiation
    • C08F2/48Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/46Polymerisation initiated by wave energy or particle radiation
    • C08F2/48Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/46Polymerisation initiated by wave energy or particle radiation
    • C08F2/54Polymerisation initiated by wave energy or particle radiation by X-rays or electrons
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22Oxygen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22Oxygen
    • C08F212/24Phenols or alcohols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/22Esters containing halogen
    • C08F220/24Esters containing halogen containing perhaloalkyl radicals
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/282Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing two or more oxygen atoms
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F236/00Copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds
    • C08F236/02Copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds
    • C08F236/04Copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds conjugated
    • C08F236/14Copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds conjugated containing elements other than carbon and hydrogen
    • C08F236/16Copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds conjugated containing elements other than carbon and hydrogen containing halogen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F279/00Macromolecular compounds obtained by polymerising monomers on to polymers of monomers having two or more carbon-to-carbon double bonds as defined in group C08F36/00
    • C08F279/02Macromolecular compounds obtained by polymerising monomers on to polymers of monomers having two or more carbon-to-carbon double bonds as defined in group C08F36/00 on to polymers of conjugated dienes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/08Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
    • C08F290/12Polymers provided for in subclasses C08C or C08F
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00Chemical modification by after-treatment
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/12Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional [2D] radiating surfaces
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Emergency Medicine (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Polymerisation Methods In General (AREA)
  • Graft Or Block Polymers (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020267004698A 2018-11-26 2019-11-18 감광성 수지 조성물, 함불소 수지 경화물의 제조 방법, 함불소 수지, 함불소 수지막, 뱅크 및 표시 소자 Pending KR20260042521A (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JPJP-P-2018-219938 2018-11-26
JP2018219938 2018-11-26
JP2018227767 2018-12-05
JPJP-P-2018-227767 2018-12-05
JPJP-P-2019-172138 2019-09-20
JP2019172138 2019-09-20
PCT/JP2019/045009 WO2020110793A1 (ja) 2018-11-26 2019-11-18 感光性樹脂組成物、含フッ素樹脂硬化物の製造方法、含フッ素樹脂、含フッ素樹脂膜、バンク及び表示素子
KR1020217019916A KR102929030B1 (ko) 2018-11-26 2019-11-18 감광성 수지 조성물, 함불소 수지 경화물의 제조 방법, 함불소 수지, 함불소 수지막, 뱅크 및 표시 소자

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020217019916A Division KR102929030B1 (ko) 2018-11-26 2019-11-18 감광성 수지 조성물, 함불소 수지 경화물의 제조 방법, 함불소 수지, 함불소 수지막, 뱅크 및 표시 소자

Publications (1)

Publication Number Publication Date
KR20260042521A true KR20260042521A (ko) 2026-03-31

Family

ID=70852912

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020267004698A Pending KR20260042521A (ko) 2018-11-26 2019-11-18 감광성 수지 조성물, 함불소 수지 경화물의 제조 방법, 함불소 수지, 함불소 수지막, 뱅크 및 표시 소자
KR1020217019916A Active KR102929030B1 (ko) 2018-11-26 2019-11-18 감광성 수지 조성물, 함불소 수지 경화물의 제조 방법, 함불소 수지, 함불소 수지막, 뱅크 및 표시 소자

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020217019916A Active KR102929030B1 (ko) 2018-11-26 2019-11-18 감광성 수지 조성물, 함불소 수지 경화물의 제조 방법, 함불소 수지, 함불소 수지막, 뱅크 및 표시 소자

Country Status (6)

Country Link
US (2) US11939459B2 (https=)
JP (2) JP7401785B2 (https=)
KR (2) KR20260042521A (https=)
CN (1) CN113166294B (https=)
TW (1) TWI838424B (https=)
WO (1) WO2020110793A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022092155A1 (https=) 2020-10-28 2022-05-05
CN116829674A (zh) * 2021-02-08 2023-09-29 中央硝子株式会社 拒液剂、固化性组合物、固化物、分隔壁、有机电致发光元件、含氟涂膜的制造方法及含氟涂膜
JPWO2022190714A1 (https=) * 2021-03-09 2022-09-15
WO2024058265A1 (ja) * 2022-09-16 2024-03-21 株式会社Eneosマテリアル 共役ジエン系重合体、重合体組成物、架橋物、及びタイヤ

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0234617A (ja) * 1988-07-22 1990-02-05 Hitachi Ltd 含フツ素系熱硬化性樹脂組成物
JP4081905B2 (ja) * 1999-02-23 2008-04-30 旭硝子株式会社 含フッ素ジエン化合物の製造方法
JP2002040650A (ja) * 2000-07-25 2002-02-06 Fujifilm Arch Co Ltd ネガ型感光性樹脂組成物
JP2003221406A (ja) 2002-01-31 2003-08-05 Asahi Glass Co Ltd 水性分散液
KR101319775B1 (ko) 2005-04-21 2013-10-17 아사히 가라스 가부시키가이샤 광경화성 조성물, 미세 패턴 형성체 및 그 제조 방법
TW200714131A (en) 2005-07-29 2007-04-01 Sanyo Electric Co Organic electroluminescent element and organic electroluminescent display device
EP1995635A4 (en) * 2006-03-16 2011-03-30 Asahi Glass Co Ltd NEGATIVE LIGHT-SENSITIVE FLUORATED AROMATIC RESIN COMPOSITION
US8900788B2 (en) * 2006-10-18 2014-12-02 Tokyo Ohka Kogyo Co., Ltd. Resist composition for immersion exposure and method of forming resist pattern
JP2008250155A (ja) 2007-03-30 2008-10-16 Fujifilm Corp 離隔壁付基板及びその製造方法、カラーフィルタ及びその製造方法、並びに表示装置
JP5111299B2 (ja) 2007-09-20 2013-01-09 富士フイルム株式会社 着色硬化性組成物、着色パターン、カラーフィルタの製造方法、カラーフィルタ、及び液晶表示装置
JP5431225B2 (ja) 2010-03-29 2014-03-05 新日鉄住金化学株式会社 アルカリ現像性感光性樹脂組成物、及びこれを用いて形成した表示素子向け隔壁、並びに表示素子
WO2012057058A1 (ja) 2010-10-29 2012-05-03 住友化学株式会社 感光性樹脂組成物、パターン構造物、表示装置および隔壁
CN103261968A (zh) 2010-12-20 2013-08-21 旭硝子株式会社 感光性树脂组合物、间隔壁、彩色滤光膜及有机el元件
WO2012111595A1 (ja) 2011-02-14 2012-08-23 住友化学株式会社 有機エレクトロルミネッセンス装置とその製造方法
KR20150067226A (ko) 2012-11-21 2015-06-17 후지필름 가부시키가이샤 감광성 수지 조성물, 경화막의 제조 방법, 경화막, 유기 el 표시 장치 및 액정 표시 장치
JP6171927B2 (ja) 2013-12-25 2017-08-02 Jsr株式会社 感放射線性樹脂組成物、硬化膜、発光素子および発光層の形成方法
JP6398774B2 (ja) 2014-02-18 2018-10-03 Agc株式会社 ネガ型感光性樹脂組成物、樹脂硬化膜、隔壁および光学素子
KR20160138058A (ko) 2014-03-31 2016-12-02 스미또모 가가꾸 가부시키가이샤 격벽을 갖는 기판
JP6500458B2 (ja) 2015-01-29 2019-04-17 三菱ケミカル株式会社 感光性樹脂組成物、それで構成される硬化部材、及びそれを備えた画像表示装置
CN107430341B (zh) * 2015-02-05 2021-03-05 Agc株式会社 感光性树脂组合物、树脂膜的制造方法、有机半导体元件的制造方法
CN105238197A (zh) 2015-11-15 2016-01-13 孟红琳 一种高导热率的导热涂料
CN105609656B (zh) 2016-01-06 2017-05-17 京东方科技集团股份有限公司 一种有机电致发光器件及显示装置
CN109641992B (zh) 2016-08-29 2021-09-21 Agc株式会社 含氟聚合物、其制造方法、以及具备含氟聚合物的固化物的物品
CN109661855B (zh) 2016-09-05 2022-07-08 三菱化学株式会社 有机场致发光元件间隔壁形成用感光性树脂组合物、间隔壁、有机场致发光元件、图像显示装置及照明
JP6663380B2 (ja) 2017-03-22 2020-03-11 信越化学工業株式会社 ポリイミド前駆体の重合体、ポジ型感光性樹脂組成物、ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
KR20200096487A (ko) 2017-12-04 2020-08-12 도레이 카부시키가이샤 기판, 광 확산 방지용 수지 조성물 및 화상 표시 장치
JP2019102664A (ja) 2017-12-04 2019-06-24 株式会社ブイ・テクノロジー Led表示パネルの製造方法
JP7375546B2 (ja) 2017-12-11 2023-11-08 Agc株式会社 ネガ型感光性樹脂組成物
WO2019176785A1 (ja) 2018-03-14 2019-09-19 東レ株式会社 ネガ型感光性着色組成物、硬化膜、それを用いたタッチパネル
WO2019225702A1 (ja) 2018-05-23 2019-11-28 セントラル硝子株式会社 パターン膜付き基板の製造方法および含フッ素共重合体

Also Published As

Publication number Publication date
TWI838424B (zh) 2024-04-11
JP7755181B2 (ja) 2025-10-16
KR102929030B1 (ko) 2026-02-23
KR20210097737A (ko) 2021-08-09
US12460031B2 (en) 2025-11-04
JPWO2020110793A1 (ja) 2021-10-21
JP7401785B2 (ja) 2023-12-20
CN113166294A (zh) 2021-07-23
US11939459B2 (en) 2024-03-26
JP2024028789A (ja) 2024-03-05
US20240270952A1 (en) 2024-08-15
CN113166294B (zh) 2024-01-12
TW202030553A (zh) 2020-08-16
WO2020110793A1 (ja) 2020-06-04
US20230027085A1 (en) 2023-01-26

Similar Documents

Publication Publication Date Title
JP7755181B2 (ja) 感光性樹脂組成物、含フッ素樹脂硬化物の製造方法
TWI465849B (zh) 光阻組成物及光阻圖型形成方法,及化合物與其所形成之酸產生劑
TWI475319B (zh) 光阻組成物,光阻圖型之形成方法,高分子化合物及化合物
KR20160124680A (ko) 송액성이 개선된 포토리소그래피용 약액 및 이를 포함하는 레지스트 조성물
KR102793761B1 (ko) 패턴막 구비 기판의 제조 방법 및 함불소 공중합체
WO2020027206A1 (ja) 光学部品形成用組成物及び光学部品、並びに、化合物及び樹脂
CN111655662B (zh) 化合物、树脂、组合物、抗蚀图案形成方法、电路图案形成方法和树脂的纯化方法
JP7853585B2 (ja) 発光素子の製造方法
TWI895532B (zh) 含氟樹脂、撥液劑、感光性樹脂組合物、硬化物及顯示器
TWI894435B (zh) 縮醛化合物、含有該化合物之添加劑及含有該化合物之阻劑用組成物
TWI911388B (zh) 感光性樹脂組合物、硬化物、含氟樹脂硬化膜及顯示器
KR20230144044A (ko) 발액제, 경화성 조성물, 경화물, 격벽, 유기 전계 발광 소자, 함불소 도막의 제조 방법 및 함불소 도막
KR20230147110A (ko) 표면 조정제, 감광성 수지 조성물, 경화물 및 디스플레이
KR20080023585A (ko) 감광성 화합물 및 이를 포함하는 포토레지스트 조성물

Legal Events

Date Code Title Description
A16 Divisional, continuation or continuation in part application filed

Free format text: ST27 STATUS EVENT CODE: A-0-1-A10-A16-DIV-PA0104 (AS PROVIDED BY THE NATIONAL OFFICE)

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A16-div-PA0104

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)