KR20260004590A - 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템 - Google Patents

기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템

Info

Publication number
KR20260004590A
KR20260004590A KR1020257043071A KR20257043071A KR20260004590A KR 20260004590 A KR20260004590 A KR 20260004590A KR 1020257043071 A KR1020257043071 A KR 1020257043071A KR 20257043071 A KR20257043071 A KR 20257043071A KR 20260004590 A KR20260004590 A KR 20260004590A
Authority
KR
South Korea
Prior art keywords
substrate
laser
laser light
wafer
absorption layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257043071A
Other languages
English (en)
Korean (ko)
Inventor
요헤이 야마시타
하야토 타노우에
야스타카 미조모토
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=76575431&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR20260004590(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20260004590A publication Critical patent/KR20260004590A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6542—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by using coherent radiation, e.g. using a laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • H01L21/268—
    • H01L21/67092—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/019—Removal of at least a part of a substrate on which semiconductor layers have been formed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/03—Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting

Landscapes

  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Manufacturing Optical Record Carriers (AREA)
KR1020257043071A 2019-12-26 2020-12-09 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템 Pending KR20260004590A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2019236190 2019-12-26
JPJP-P-2019-236190 2019-12-26
JPJP-P-2020-011824 2020-01-28
JP2020011824 2020-01-28
KR1020227025085A KR102905960B1 (ko) 2019-12-26 2020-12-09 기판 처리 방법 및 기판 처리 장치
PCT/JP2020/045884 WO2021131711A1 (ja) 2019-12-26 2020-12-09 基板処理方法及び基板処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020227025085A Division KR102905960B1 (ko) 2019-12-26 2020-12-09 기판 처리 방법 및 기판 처리 장치

Publications (1)

Publication Number Publication Date
KR20260004590A true KR20260004590A (ko) 2026-01-08

Family

ID=76575431

Family Applications (5)

Application Number Title Priority Date Filing Date
KR1020257043071A Pending KR20260004590A (ko) 2019-12-26 2020-12-09 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템
KR1020227025085A Active KR102905960B1 (ko) 2019-12-26 2020-12-09 기판 처리 방법 및 기판 처리 장치
KR1020257043052A Pending KR20260008836A (ko) 2019-12-26 2020-12-09 기판 처리 방법 및 기판 처리 장치
KR1020257043181A Pending KR20260008839A (ko) 2019-12-26 2020-12-09 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템
KR1020257043161A Pending KR20260008837A (ko) 2019-12-26 2020-12-09 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템

Family Applications After (4)

Application Number Title Priority Date Filing Date
KR1020227025085A Active KR102905960B1 (ko) 2019-12-26 2020-12-09 기판 처리 방법 및 기판 처리 장치
KR1020257043052A Pending KR20260008836A (ko) 2019-12-26 2020-12-09 기판 처리 방법 및 기판 처리 장치
KR1020257043181A Pending KR20260008839A (ko) 2019-12-26 2020-12-09 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템
KR1020257043161A Pending KR20260008837A (ko) 2019-12-26 2020-12-09 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템

Country Status (7)

Country Link
US (5) US12322656B2 (https=)
EP (1) EP4079445A4 (https=)
JP (7) JP7304433B2 (https=)
KR (5) KR20260004590A (https=)
CN (5) CN120637206A (https=)
TW (7) TWI886074B (https=)
WO (1) WO2021131711A1 (https=)

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TW202326839A (zh) * 2021-08-06 2023-07-01 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
JP7678881B2 (ja) * 2021-08-16 2025-05-16 東京エレクトロン株式会社 処理方法及び処理システム
JP7623094B2 (ja) * 2021-09-02 2025-01-28 東京エレクトロン株式会社 レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置
JP7690038B2 (ja) * 2021-09-06 2025-06-09 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20250153272A1 (en) 2022-01-31 2025-05-15 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
WO2023176519A1 (ja) 2022-03-17 2023-09-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2023238542A1 (ja) * 2022-06-07 2023-12-14 東京エレクトロン株式会社 基板処理システム及び基板処理方法
JPWO2024241936A1 (https=) 2023-05-25 2024-11-28
KR20260036558A (ko) * 2023-07-05 2026-03-17 도쿄엘렉트론가부시키가이샤 처리 시스템 및 처리 방법
WO2025011712A1 (de) * 2023-07-13 2025-01-16 Innolite Gmbh Vorrichtung und verfahren zur laserbestrahlung eines werkstückrohlings für die herstellung einer werkstückoberfläche
CN121890269A (zh) * 2024-08-13 2026-04-17 东京毅力科创株式会社 半导体装置的制造方法
WO2026038301A1 (ja) * 2024-08-13 2026-02-19 東京エレクトロン株式会社 半導体装置の製造方法
WO2026038302A1 (ja) * 2024-08-13 2026-02-19 東京エレクトロン株式会社 半導体装置の製造方法

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KR102760744B1 (ko) * 2018-04-27 2025-02-03 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법

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EP4079445A1 (en) 2022-10-26
TWI867116B (zh) 2024-12-21
CN120637204A (zh) 2025-09-12
JP2025072682A (ja) 2025-05-09
JP7641434B2 (ja) 2025-03-06
TWI884111B (zh) 2025-05-11
TW202510178A (zh) 2025-03-01
JP2023126270A (ja) 2023-09-07
JP2025113476A (ja) 2025-08-01
CN114830295B (zh) 2025-06-10
JP7843396B2 (ja) 2026-04-09
KR20220120612A (ko) 2022-08-30
TW202510169A (zh) 2025-03-01
JP7641435B2 (ja) 2025-03-06
JP2025003664A (ja) 2025-01-09
TW202533365A (zh) 2025-08-16
KR20260008836A (ko) 2026-01-16
JPWO2021131711A1 (https=) 2021-07-01
TW202510207A (zh) 2025-03-01
CN120637205A (zh) 2025-09-12
US20250259898A1 (en) 2025-08-14
JP7304433B2 (ja) 2023-07-06
US20250259897A1 (en) 2025-08-14
JP7579916B2 (ja) 2024-11-08
TW202543047A (zh) 2025-11-01
JP7611456B1 (ja) 2025-01-09
CN114830295A (zh) 2022-07-29
TWI886074B (zh) 2025-06-01
KR20260008839A (ko) 2026-01-16
TW202510179A (zh) 2025-03-01
KR102905960B1 (ko) 2025-12-31
US20230023577A1 (en) 2023-01-26
JP2025010542A (ja) 2025-01-21
KR20260008837A (ko) 2026-01-16
WO2021131711A1 (ja) 2021-07-01
TWI892908B (zh) 2025-08-01
US20250259896A1 (en) 2025-08-14
US20250259899A1 (en) 2025-08-14
EP4079445A4 (en) 2023-12-27
US12322656B2 (en) 2025-06-03
TWI912193B (zh) 2026-01-11
JP2025003662A (ja) 2025-01-09
JP7727869B2 (ja) 2025-08-21
CN120637207A (zh) 2025-09-12
CN120637206A (zh) 2025-09-12
TWI894051B (zh) 2025-08-11
TW202129823A (zh) 2021-08-01

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