KR20250073533A - 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치 및 고체 촬상 장치의 구동 방법 - Google Patents

촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치 및 고체 촬상 장치의 구동 방법 Download PDF

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KR20250073533A
KR20250073533A KR1020257015559A KR20257015559A KR20250073533A KR 20250073533 A KR20250073533 A KR 20250073533A KR 1020257015559 A KR1020257015559 A KR 1020257015559A KR 20257015559 A KR20257015559 A KR 20257015559A KR 20250073533 A KR20250073533 A KR 20250073533A
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electrode
photoelectric conversion
potential
charge accumulation
conversion layer
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Korean (ko)
Inventor
히데아키 토가시
후미히코 코가
테츠지 야마구치
신타로우 히라타
타이이치로 와타나베
요시히로 안도
토요타카 카타오카
사토시 케이노
유키오 카네다
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소니그룹주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
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    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
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    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
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    • H10F39/80—Constructional details of image sensors
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    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
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    • H10F39/805—Coatings
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
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    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
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    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
KR1020257015559A 2016-03-01 2017-02-28 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치 및 고체 촬상 장치의 구동 방법 Pending KR20250073533A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JPJP-P-2016-038777 2016-03-01
JP2016038777 2016-03-01
JPJP-P-2016-193919 2016-09-30
JP2016193919A JP6780421B2 (ja) 2016-03-01 2016-09-30 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
KR1020177022537A KR102810497B1 (ko) 2016-03-01 2017-02-28 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치, 및, 고체 촬상 장치의 구동 방법
PCT/JP2017/007819 WO2017150540A1 (en) 2016-03-01 2017-02-28 Imaging element, stacked-type imaging element, solid-state imaging device, and driving method for solid-state imaging device

Related Parent Applications (1)

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KR1020177022537A Division KR102810497B1 (ko) 2016-03-01 2017-02-28 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치, 및, 고체 촬상 장치의 구동 방법

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KR20250073533A true KR20250073533A (ko) 2025-05-27

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KR1020177022537A Active KR102810497B1 (ko) 2016-03-01 2017-02-28 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치, 및, 고체 촬상 장치의 구동 방법
KR1020257015559A Pending KR20250073533A (ko) 2016-03-01 2017-02-28 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치 및 고체 촬상 장치의 구동 방법

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Country Status (6)

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US (5) US10714532B2 (enExample)
EP (1) EP3424089A1 (enExample)
JP (1) JP6780421B2 (enExample)
KR (2) KR102810497B1 (enExample)
CN (4) CN118099175A (enExample)
WO (1) WO2017150540A1 (enExample)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8736733B2 (en) 2010-03-19 2014-05-27 Invisage Technologies, Inc. Dark current reduction in image sensors via dynamic electrical biasing
WO2016019258A1 (en) 2014-07-31 2016-02-04 Emanuele Mandelli Image sensors with noise reduction
TWI756207B (zh) * 2016-03-01 2022-03-01 日商新力股份有限公司 成像元件、堆疊型成像元件、固態成像裝置及用於固態成像裝置之驅動方法
JP6780421B2 (ja) * 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
JP2018060910A (ja) 2016-10-05 2018-04-12 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像装置
JP6926450B2 (ja) 2016-11-22 2021-08-25 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP6929643B2 (ja) * 2016-12-27 2021-09-01 キヤノン株式会社 撮像装置および撮像システム
KR102635858B1 (ko) * 2017-01-05 2024-02-15 삼성전자주식회사 이미지 센서
KR102831200B1 (ko) * 2017-02-02 2025-07-10 서울반도체 주식회사 발광 다이오드 패키지
US10425601B1 (en) 2017-05-05 2019-09-24 Invisage Technologies, Inc. Three-transistor active reset pixel
JP7099073B2 (ja) * 2017-06-21 2022-07-12 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
CN115332277A (zh) 2017-06-21 2022-11-11 索尼半导体解决方案公司 成像元件、层叠式成像元件和固态成像装置
EP3671840A4 (en) * 2017-08-16 2020-08-19 Sony Corporation IMAGING ELEMENT, LAYERING IMAGING ELEMENT AND SEMICONDUCTOR IMAGING DEVICE
TW201911549A (zh) * 2017-08-16 2019-03-16 日商索尼股份有限公司 攝像元件、積層型攝像元件及固體攝像裝置
JP2019036641A (ja) 2017-08-16 2019-03-07 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP2019041018A (ja) * 2017-08-25 2019-03-14 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
EP4350772A3 (en) * 2017-08-31 2024-06-05 Sony Semiconductor Solutions Corporation Imaging element, laminated imaging element, and solid-state imaging device
CN111448663B (zh) * 2017-12-05 2024-04-16 索尼公司 摄像元件、层叠型摄像元件和固态摄像装置
JP2019114576A (ja) 2017-12-20 2019-07-11 ソニーセミコンダクタソリューションズ株式会社 光電変換素子および固体撮像装置
US11581370B2 (en) 2018-01-31 2023-02-14 Sony Corporation Photoelectric conversion element and imaging device
WO2019151049A1 (ja) * 2018-01-31 2019-08-08 ソニー株式会社 光電変換素子、固体撮像装置及び電子装置
WO2019150987A1 (ja) * 2018-01-31 2019-08-08 ソニー株式会社 光電変換素子および撮像装置
WO2019151042A1 (ja) * 2018-01-31 2019-08-08 ソニー株式会社 光電変換素子、固体撮像装置及び電子装置
WO2019150989A1 (ja) * 2018-01-31 2019-08-08 ソニー株式会社 光電変換素子および撮像装置
WO2019150971A1 (ja) * 2018-01-31 2019-08-08 ソニー株式会社 光電変換素子および撮像装置
EP3748956B1 (en) 2018-02-01 2023-09-27 Sony Semiconductor Solutions Corporation Solid-state imaging device and method for manufacturing same, and electronic apparatus
JP7486417B2 (ja) * 2018-03-19 2024-05-17 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像装置
TWI820114B (zh) * 2018-04-20 2023-11-01 日商索尼股份有限公司 攝像元件、積層型攝像元件及固體攝像裝置
CN111971796B (zh) * 2018-04-20 2024-07-19 索尼公司 摄像器件、堆叠式摄像器件和固态摄像装置
CN112119500B (zh) * 2018-05-21 2025-06-17 索尼公司 固态摄像元件及其制造方法
US11477404B2 (en) 2018-06-05 2022-10-18 Sony Semiconductor Solutions Corporation Imaging device
US11515360B2 (en) 2018-06-08 2022-11-29 Sony Semiconductor Solutions Corporation Imaging device, stacked imaging device, and solid-state imaging apparatus
WO2019240207A1 (ja) * 2018-06-15 2019-12-19 ソニーセミコンダクタソリューションズ株式会社 撮像装置およびその製造方法、電子機器
TWI891386B (zh) * 2018-06-15 2025-07-21 日商索尼股份有限公司 固體攝像元件
JP2020004922A (ja) * 2018-07-02 2020-01-09 セイコーエプソン株式会社 光電変換装置、電子機器および光電変換装置の製造方法
CN112368836B (zh) 2018-07-03 2024-11-19 索尼半导体解决方案公司 成像元件和固态成像装置
US12002823B2 (en) 2018-07-03 2024-06-04 Sony Semiconductor Solutions Corporation Solid-state image sensor with imaging device blocks that each include imaging devices
DE112019003626T5 (de) 2018-07-17 2021-05-27 Sony Corporation Bildgebungselement und bildgebungsvorrichtung
KR102786022B1 (ko) * 2018-07-17 2025-03-26 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
TWI840383B (zh) 2018-07-26 2024-05-01 日商索尼半導體解決方案公司 固體攝像裝置
TWI840387B (zh) 2018-07-26 2024-05-01 日商索尼股份有限公司 固態攝像元件、固態攝像裝置及固態攝像元件之讀出方法
WO2020026636A1 (ja) 2018-07-30 2020-02-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子装置
DE112019003858T5 (de) 2018-07-30 2021-04-22 Sony Corporation Photoelektrisches umwandlungselement, festkörper-bildgebungsvorrichtung und elektronische vorrichtung
WO2020027081A1 (ja) 2018-07-30 2020-02-06 ソニー株式会社 撮像素子および撮像装置
WO2020026851A1 (ja) 2018-07-31 2020-02-06 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP7240833B2 (ja) * 2018-08-01 2023-03-16 日本放送協会 撮像素子
CN109065587A (zh) * 2018-08-07 2018-12-21 京东方科技集团股份有限公司 显示基板及其制造方法、显示装置
CN109087929A (zh) * 2018-08-23 2018-12-25 德淮半导体有限公司 背照式图像传感器及其制造方法
WO2020050170A1 (ja) 2018-09-04 2020-03-12 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP7468347B2 (ja) 2018-09-28 2024-04-16 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
KR102625276B1 (ko) 2018-10-10 2024-01-12 삼성전자주식회사 이미지 센서
US12074178B2 (en) 2018-12-28 2024-08-27 Sony Semiconductor Solutions Corporation Imaging device and electronic apparatus
KR102710266B1 (ko) 2019-01-07 2024-09-27 삼성전자주식회사 이미지 센서 및 이의 제조 방법
WO2020166309A1 (ja) 2019-02-15 2020-08-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
WO2020179300A1 (ja) * 2019-03-04 2020-09-10 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、固体撮像装置の製造方法および電子機器
EP3951877B1 (en) 2019-03-29 2025-06-04 Sony Semiconductor Solutions Corporation Solid-state imaging device and electronic apparatus
JP7624608B2 (ja) * 2019-04-25 2025-01-31 パナソニックＩｐマネジメント株式会社 撮像装置
WO2020225987A1 (ja) * 2019-05-07 2020-11-12 パナソニックＩｐマネジメント株式会社 撮像装置
KR102736230B1 (ko) * 2019-05-17 2024-11-28 삼성전자주식회사 광전 변환 소자, 유기 센서 및 전자 장치
CN113728451B (zh) 2019-05-24 2025-09-16 索尼集团公司 摄像元件、层叠式摄像元件和固态摄像装置以及摄像元件的制造方法
JP7578104B2 (ja) * 2019-05-24 2024-11-06 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
KR20250004388A (ko) * 2019-06-21 2025-01-07 소니 세미컨덕터 솔루션즈 가부시키가이샤 광전 변환 소자, 광검출 장치, 광검출 시스템, 전자 기기 및 이동체
JP2021048152A (ja) * 2019-09-17 2021-03-25 ソニーセミコンダクタソリューションズ株式会社 半導体素子および半導体装置
US20220376128A1 (en) * 2019-09-27 2022-11-24 Sony Semiconductor Solutions Corporation Imaging device and electronic apparatus
TWI875889B (zh) * 2019-12-26 2025-03-11 日商索尼半導體解決方案公司 攝像裝置及電子機器
WO2021153294A1 (ja) * 2020-01-29 2021-08-05 ソニーグループ株式会社 撮像素子および撮像装置
CN114846609A (zh) 2020-01-29 2022-08-02 索尼半导体解决方案公司 固态成像元件和电子设备
KR102776688B1 (ko) 2020-03-31 2025-03-11 소니그룹주식회사 촬상 소자 및 촬상 장치
CN115244694B (zh) * 2020-03-31 2025-11-25 松下知识产权经营株式会社 摄像装置
KR20220032923A (ko) 2020-09-08 2022-03-15 삼성전자주식회사 이미지 센서
US12484322B2 (en) 2020-09-25 2025-11-25 Sony Semiconductor Solutions Corporation Solid-state imaging device and electronic apparatus
TW202232743A (zh) 2020-09-25 2022-08-16 日商索尼半導體解決方案公司 固態攝像裝置及電子機器
JP2021101491A (ja) * 2021-03-31 2021-07-08 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
WO2022230292A1 (ja) 2021-04-30 2022-11-03 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器および移動体
US20240365574A1 (en) 2021-07-28 2024-10-31 Sony Semiconductor Solutions Corporation Imaging element and imaging device
JPWO2023074120A1 (enExample) 2021-10-29 2023-05-04
US12176364B2 (en) * 2021-12-27 2024-12-24 Omnivision Technologies, Inc. Passivation-enhanced image sensor and surface-passivation method
WO2024070293A1 (ja) 2022-09-30 2024-04-04 ソニーセミコンダクタソリューションズ株式会社 光電変換素子および光検出装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011138927A (ja) 2009-12-28 2011-07-14 Sony Corp 固体撮像装置とその製造方法、及び電子機器

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56137684A (en) * 1980-03-31 1981-10-27 Ricoh Co Ltd Photoelectric transducing element
US6468065B1 (en) 1999-09-29 2002-10-22 Anvil Iron Works, Inc. Brick molding apparatus
JP2006120922A (ja) * 2004-10-22 2006-05-11 Fuji Film Microdevices Co Ltd 光電変換膜積層型カラー固体撮像装置
JP2006270021A (ja) * 2005-02-28 2006-10-05 Fuji Photo Film Co Ltd 積層型光電変換素子
JP2007081137A (ja) * 2005-09-14 2007-03-29 Fujifilm Corp 光電変換素子及び固体撮像素子
US8665363B2 (en) * 2009-01-21 2014-03-04 Sony Corporation Solid-state image device, method for producing the same, and image pickup apparatus
US8901541B2 (en) * 2009-04-07 2014-12-02 Rohm Co., Ltd. Photoelectric conversion device and image pick-up device
US9123653B2 (en) * 2009-07-23 2015-09-01 Sony Corporation Solid-state imaging device, method of manufacturing the same, and electronic apparatus
JP5564847B2 (ja) * 2009-07-23 2014-08-06 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2011124501A (ja) * 2009-12-14 2011-06-23 Sharp Corp 固体撮像装置およびその製造方法
JP5448877B2 (ja) * 2010-01-25 2014-03-19 富士フイルム株式会社 放射線検出器
JP5533046B2 (ja) * 2010-03-05 2014-06-25 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器
KR101774491B1 (ko) * 2011-10-14 2017-09-13 삼성전자주식회사 유기 포토다이오드를 포함하는 유기 픽셀, 이의 제조 방법, 및 상기 유기 픽셀을 포함하는 장치들
KR101861650B1 (ko) * 2011-10-17 2018-05-29 삼성전자주식회사 이미지 센서, 이를 포함하는 전자 시스템 및 그 이미지 센싱 방법
JP5895650B2 (ja) * 2012-03-28 2016-03-30 ソニー株式会社 撮像装置および撮像表示システム
US9490441B2 (en) * 2012-08-02 2016-11-08 Sony Corporation Semiconductor device, method of manufacturing semiconductor device, solid-state image pickup unit, and electronic apparatus
JP2015053296A (ja) * 2013-01-28 2015-03-19 ソニー株式会社 半導体素子およびこれを備えた半導体装置
US20150029425A1 (en) 2013-07-26 2015-01-29 Hon Hai Precision Industry Co., Ltd. Auto-stereoscopic display device
JP6108172B2 (ja) * 2013-09-02 2017-04-05 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
CN105659389B (zh) * 2013-10-25 2018-10-19 夏普株式会社 光电转换元件、光电转换模块以及太阳光发电系统
KR102197069B1 (ko) * 2014-02-04 2020-12-30 삼성전자 주식회사 이미지 센서 및 이미지 처리 장치
JP6597610B2 (ja) 2014-07-17 2019-10-30 ソニー株式会社 光電変換素子、撮像装置、光センサ及び光電変換素子の製造方法
JP2016058559A (ja) * 2014-09-10 2016-04-21 ソニー株式会社 固体撮像装置およびその駆動方法、並びに電子機器
CN104861958B (zh) * 2015-05-14 2017-02-15 北京理工大学 一种钙钛矿/聚合物复合发光材料及其制备方法
DE102016122658B4 (de) * 2015-12-04 2021-07-15 Canon Kabushiki Kaisha Abbildungsvorrichtung und Abbildungssystem
JP6780421B2 (ja) 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
TWI756207B (zh) * 2016-03-01 2022-03-01 日商新力股份有限公司 成像元件、堆疊型成像元件、固態成像裝置及用於固態成像裝置之驅動方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011138927A (ja) 2009-12-28 2011-07-14 Sony Corp 固体撮像装置とその製造方法、及び電子機器

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