KR20250069650A - 폴리머, 이 폴리머를 함유하는 레지스트 조성물, 그것을 사용한 부재의 제조 방법 및 패턴 형성 방법 - Google Patents

폴리머, 이 폴리머를 함유하는 레지스트 조성물, 그것을 사용한 부재의 제조 방법 및 패턴 형성 방법 Download PDF

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Publication number
KR20250069650A
KR20250069650A KR1020257012618A KR20257012618A KR20250069650A KR 20250069650 A KR20250069650 A KR 20250069650A KR 1020257012618 A KR1020257012618 A KR 1020257012618A KR 20257012618 A KR20257012618 A KR 20257012618A KR 20250069650 A KR20250069650 A KR 20250069650A
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South Korea
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group
substituent
carbon atoms
polymer
unit
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Pending
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KR1020257012618A
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English (en)
Korean (ko)
Inventor
사토시 에노모토
코헤이 마치다
타카히로 코자와
Original Assignee
도요 고세이 고교 가부시키가이샤
고꾸리쯔 다이가꾸 호우징 오사까 다이가꾸
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Application filed by 도요 고세이 고교 가부시키가이샤, 고꾸리쯔 다이가꾸 호우징 오사까 다이가꾸 filed Critical 도요 고세이 고교 가부시키가이샤
Publication of KR20250069650A publication Critical patent/KR20250069650A/ko
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/38—Esters containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F230/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
    • C08F230/04—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials For Photolithography (AREA)
KR1020257012618A 2022-09-22 2023-09-13 폴리머, 이 폴리머를 함유하는 레지스트 조성물, 그것을 사용한 부재의 제조 방법 및 패턴 형성 방법 Pending KR20250069650A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022150870 2022-09-22
JPJP-P-2022-150870 2022-09-22
PCT/JP2023/033450 WO2024062998A1 (ja) 2022-09-22 2023-09-13 ポリマー、該ポリマーを含有するレジスト組成物、それを用いた部材の製造方法及びパターン形成方法

Publications (1)

Publication Number Publication Date
KR20250069650A true KR20250069650A (ko) 2025-05-19

Family

ID=90454393

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257012618A Pending KR20250069650A (ko) 2022-09-22 2023-09-13 폴리머, 이 폴리머를 함유하는 레지스트 조성물, 그것을 사용한 부재의 제조 방법 및 패턴 형성 방법

Country Status (4)

Country Link
JP (1) JPWO2024062998A1 (https=)
KR (1) KR20250069650A (https=)
TW (1) TW202432633A (https=)
WO (1) WO2024062998A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026048572A1 (ja) * 2024-08-28 2026-03-05 富士フイルム株式会社 感光性組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0990637A (ja) 1995-07-14 1997-04-04 Fujitsu Ltd レジスト組成物及びレジストパターンの形成方法
JP2010276910A (ja) 2009-05-29 2010-12-09 Shin-Etsu Chemical Co Ltd ネガ型レジスト組成物及びこれを用いたパターン形成方法
JP2011053622A (ja) 2009-09-04 2011-03-17 Fujifilm Corp 感活性光線性または感放射線性組成物およびそれを用いたパターン形成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017207532A (ja) * 2016-05-16 2017-11-24 東洋合成工業株式会社 レジスト組成物及びそれを用いたデバイスの製造方法
JP7079647B2 (ja) * 2018-04-17 2022-06-02 東洋合成工業株式会社 組成物及びそれを用いたデバイスの製造方法
JP7304693B2 (ja) * 2018-12-19 2023-07-07 東京エレクトロン株式会社 レジスト組成物およびレジストパターン形成方法
JP7249198B2 (ja) * 2019-04-19 2023-03-30 東洋合成工業株式会社 オニウム塩、組成物及びそれを用いたデバイスの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0990637A (ja) 1995-07-14 1997-04-04 Fujitsu Ltd レジスト組成物及びレジストパターンの形成方法
JP2010276910A (ja) 2009-05-29 2010-12-09 Shin-Etsu Chemical Co Ltd ネガ型レジスト組成物及びこれを用いたパターン形成方法
JP2011053622A (ja) 2009-09-04 2011-03-17 Fujifilm Corp 感活性光線性または感放射線性組成物およびそれを用いたパターン形成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Proc. of SPIE Vol. 11854 118540A-4(2021)

Also Published As

Publication number Publication date
JPWO2024062998A1 (https=) 2024-03-28
TW202432633A (zh) 2024-08-16
WO2024062998A1 (ja) 2024-03-28

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Patent event date: 20250417

Patent event code: PA01051R01D

Comment text: International Patent Application

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