TW202432633A - 聚合物、含有該聚合物之抗蝕劑組合物、使用其之構件之製造方法及圖案形成方法 - Google Patents

聚合物、含有該聚合物之抗蝕劑組合物、使用其之構件之製造方法及圖案形成方法 Download PDF

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Publication number
TW202432633A
TW202432633A TW112136241A TW112136241A TW202432633A TW 202432633 A TW202432633 A TW 202432633A TW 112136241 A TW112136241 A TW 112136241A TW 112136241 A TW112136241 A TW 112136241A TW 202432633 A TW202432633 A TW 202432633A
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TW
Taiwan
Prior art keywords
group
substituent
carbon atoms
polymer
integer
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TW112136241A
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English (en)
Chinese (zh)
Inventor
榎本智至
町田康平
古澤孝弘
Original Assignee
日商東洋合成工業股份有限公司
國立大學法人大阪大學
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Application filed by 日商東洋合成工業股份有限公司, 國立大學法人大阪大學 filed Critical 日商東洋合成工業股份有限公司
Publication of TW202432633A publication Critical patent/TW202432633A/zh

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/38—Esters containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F230/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
    • C08F230/04—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials For Photolithography (AREA)
TW112136241A 2022-09-22 2023-09-22 聚合物、含有該聚合物之抗蝕劑組合物、使用其之構件之製造方法及圖案形成方法 TW202432633A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-150870 2022-09-22
JP2022150870 2022-09-22

Publications (1)

Publication Number Publication Date
TW202432633A true TW202432633A (zh) 2024-08-16

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Family Applications (1)

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TW112136241A TW202432633A (zh) 2022-09-22 2023-09-22 聚合物、含有該聚合物之抗蝕劑組合物、使用其之構件之製造方法及圖案形成方法

Country Status (4)

Country Link
JP (1) JPWO2024062998A1 (https=)
KR (1) KR20250069650A (https=)
TW (1) TW202432633A (https=)
WO (1) WO2024062998A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026048572A1 (ja) * 2024-08-28 2026-03-05 富士フイルム株式会社 感光性組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP4955732B2 (ja) 2009-05-29 2012-06-20 信越化学工業株式会社 ネガ型レジスト組成物及びこれを用いたパターン形成方法
JP5401221B2 (ja) 2009-09-04 2014-01-29 富士フイルム株式会社 感活性光線性または感放射線性組成物およびそれを用いたパターン形成方法
JP2017207532A (ja) * 2016-05-16 2017-11-24 東洋合成工業株式会社 レジスト組成物及びそれを用いたデバイスの製造方法
JP7079647B2 (ja) * 2018-04-17 2022-06-02 東洋合成工業株式会社 組成物及びそれを用いたデバイスの製造方法
JP7304693B2 (ja) * 2018-12-19 2023-07-07 東京エレクトロン株式会社 レジスト組成物およびレジストパターン形成方法
JP7249198B2 (ja) * 2019-04-19 2023-03-30 東洋合成工業株式会社 オニウム塩、組成物及びそれを用いたデバイスの製造方法

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Publication number Publication date
KR20250069650A (ko) 2025-05-19
JPWO2024062998A1 (https=) 2024-03-28
WO2024062998A1 (ja) 2024-03-28

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