KR20240072094A - 탄화규소 단결정 웨이퍼, 탄화규소 단결정 잉곳 및 탄화규소 단결정의 제조방법 - Google Patents

탄화규소 단결정 웨이퍼, 탄화규소 단결정 잉곳 및 탄화규소 단결정의 제조방법 Download PDF

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Publication number
KR20240072094A
KR20240072094A KR1020237045444A KR20237045444A KR20240072094A KR 20240072094 A KR20240072094 A KR 20240072094A KR 1020237045444 A KR1020237045444 A KR 1020237045444A KR 20237045444 A KR20237045444 A KR 20237045444A KR 20240072094 A KR20240072094 A KR 20240072094A
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South Korea
Prior art keywords
silicon carbide
single crystal
carbide single
wafer
less
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KR1020237045444A
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English (en)
Korean (ko)
Inventor
도모노리 우메자키
가즈토 구마가이
가쿠 고노
Original Assignee
샌트랄 글래스 컴퍼니 리미티드
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Publication of KR20240072094A publication Critical patent/KR20240072094A/ko
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/062—Vertical dipping system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020237045444A 2021-09-30 2022-09-26 탄화규소 단결정 웨이퍼, 탄화규소 단결정 잉곳 및 탄화규소 단결정의 제조방법 Pending KR20240072094A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021160607 2021-09-30
JPJP-P-2021-160607 2021-09-30
PCT/JP2022/035722 WO2023054263A1 (ja) 2021-09-30 2022-09-26 炭化ケイ素単結晶ウエハ、炭化ケイ素単結晶インゴット及び炭化ケイ素単結晶の製造方法

Publications (1)

Publication Number Publication Date
KR20240072094A true KR20240072094A (ko) 2024-05-23

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KR1020237045444A Pending KR20240072094A (ko) 2021-09-30 2022-09-26 탄화규소 단결정 웨이퍼, 탄화규소 단결정 잉곳 및 탄화규소 단결정의 제조방법

Country Status (6)

Country Link
US (1) US12325935B2 (https=)
EP (1) EP4411029A4 (https=)
JP (1) JPWO2023054263A1 (https=)
KR (1) KR20240072094A (https=)
CN (1) CN118043504A (https=)
WO (1) WO2023054263A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4411030A4 (en) * 2021-09-30 2025-10-08 Central Glass Co Ltd SILICON CARBIDE MONOCRYSTALLINE WAFER AND SILICON CARBIDE MONOCRYSTALLINE INGOT

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009167047A (ja) 2008-01-15 2009-07-30 Nippon Steel Corp 炭化珪素単結晶インゴット、これから得られる基板及びエピタキシャルウェハ
JP2015030640A (ja) 2013-08-02 2015-02-16 株式会社デンソー 炭化珪素単結晶
JP2016088794A (ja) 2014-10-31 2016-05-23 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP2016164120A (ja) 2016-03-15 2016-09-08 新日鉄住金マテリアルズ株式会社 炭化珪素単結晶ウェハ
WO2017047536A1 (ja) 2015-09-14 2017-03-23 新日鐵住金株式会社 ＳｉＣ単結晶の製造装置、ＳｉＣ単結晶の製造方法及びＳｉＣ単結晶材
JP2018111639A (ja) 2017-01-13 2018-07-19 セントラル硝子株式会社 炭化ケイ素単結晶ウェハ、インゴット及びその製造方法

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JP2923260B2 (ja) 1997-03-19 1999-07-26 東洋炭素株式会社 単結晶引上装置、高純度黒鉛材料及びその製造方法
JP4853449B2 (ja) * 2007-10-11 2012-01-11 住友金属工業株式会社 ＳｉＣ単結晶の製造方法、ＳｉＣ単結晶ウエハ及びＳｉＣ半導体デバイス
EP2245217A1 (en) 2007-12-12 2010-11-03 Dow Corning Corporation Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes
JP5803519B2 (ja) * 2011-09-29 2015-11-04 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法及び製造装置
WO2014034080A1 (ja) 2012-08-26 2014-03-06 国立大学法人名古屋大学 ３Ｃ－ＳｉＣ単結晶およびその製造方法
JP6238249B2 (ja) 2013-05-20 2017-11-29 国立研究開発法人産業技術総合研究所 炭化珪素単結晶及びその製造方法
KR102160863B1 (ko) * 2014-09-30 2020-09-28 쇼와 덴코 가부시키가이샤 탄화규소 단결정 웨이퍼
JP6595897B2 (ja) * 2015-12-14 2019-10-23 東洋炭素株式会社 液相エピタキシャル成長方法及び単結晶ＳｉＣの製造方法
US20170321345A1 (en) * 2016-05-06 2017-11-09 Ii-Vi Incorporated Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof
JP2018188330A (ja) * 2017-05-02 2018-11-29 トヨタ自動車株式会社 ＳｉＣ単結晶基板の製造方法
JP6758491B2 (ja) * 2017-05-17 2020-09-23 三菱電機株式会社 ＳｉＣエピタキシャルウエハおよびその製造方法
JP7415224B2 (ja) 2020-03-31 2024-01-17 株式会社アイシン 移動装置
CN112779603A (zh) * 2020-12-23 2021-05-11 北京天科合达半导体股份有限公司 一种高质量低缺陷碳化硅单晶、其制备方法及应用
EP4411030A4 (en) * 2021-09-30 2025-10-08 Central Glass Co Ltd SILICON CARBIDE MONOCRYSTALLINE WAFER AND SILICON CARBIDE MONOCRYSTALLINE INGOT
JP2023127894A (ja) * 2022-03-02 2023-09-14 株式会社デンソー 炭化珪素単結晶およびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009167047A (ja) 2008-01-15 2009-07-30 Nippon Steel Corp 炭化珪素単結晶インゴット、これから得られる基板及びエピタキシャルウェハ
JP2015030640A (ja) 2013-08-02 2015-02-16 株式会社デンソー 炭化珪素単結晶
JP2016088794A (ja) 2014-10-31 2016-05-23 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
WO2017047536A1 (ja) 2015-09-14 2017-03-23 新日鐵住金株式会社 ＳｉＣ単結晶の製造装置、ＳｉＣ単結晶の製造方法及びＳｉＣ単結晶材
JP2016164120A (ja) 2016-03-15 2016-09-08 新日鉄住金マテリアルズ株式会社 炭化珪素単結晶ウェハ
JP2018111639A (ja) 2017-01-13 2018-07-19 セントラル硝子株式会社 炭化ケイ素単結晶ウェハ、インゴット及びその製造方法

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TW202336298A (zh) 2023-09-16
CN118043504A (zh) 2024-05-14
US12325935B2 (en) 2025-06-10
US20240368806A1 (en) 2024-11-07
EP4411029A1 (en) 2024-08-07
WO2023054263A1 (ja) 2023-04-06
JPWO2023054263A1 (https=) 2023-04-06
EP4411029A4 (en) 2025-10-22

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