JPWO2023054263A1 - - Google Patents
Info
- Publication number
- JPWO2023054263A1 JPWO2023054263A1 JP2023551471A JP2023551471A JPWO2023054263A1 JP WO2023054263 A1 JPWO2023054263 A1 JP WO2023054263A1 JP 2023551471 A JP2023551471 A JP 2023551471A JP 2023551471 A JP2023551471 A JP 2023551471A JP WO2023054263 A1 JPWO2023054263 A1 JP WO2023054263A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/062—Vertical dipping system
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021160607 | 2021-09-30 | ||
| PCT/JP2022/035722 WO2023054263A1 (ja) | 2021-09-30 | 2022-09-26 | 炭化ケイ素単結晶ウエハ、炭化ケイ素単結晶インゴット及び炭化ケイ素単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023054263A1 true JPWO2023054263A1 (https=) | 2023-04-06 |
| JPWO2023054263A5 JPWO2023054263A5 (https=) | 2024-06-21 |
Family
ID=85782662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023551471A Pending JPWO2023054263A1 (https=) | 2021-09-30 | 2022-09-26 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12325935B2 (https=) |
| EP (1) | EP4411029A4 (https=) |
| JP (1) | JPWO2023054263A1 (https=) |
| KR (1) | KR20240072094A (https=) |
| CN (1) | CN118043504A (https=) |
| WO (1) | WO2023054263A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4411030A4 (en) * | 2021-09-30 | 2025-10-08 | Central Glass Co Ltd | SILICON CARBIDE MONOCRYSTALLINE WAFER AND SILICON CARBIDE MONOCRYSTALLINE INGOT |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2923260B2 (ja) | 1997-03-19 | 1999-07-26 | 東洋炭素株式会社 | 単結晶引上装置、高純度黒鉛材料及びその製造方法 |
| JP4853449B2 (ja) * | 2007-10-11 | 2012-01-11 | 住友金属工業株式会社 | ＳｉＣ単結晶の製造方法、ＳｉＣ単結晶ウエハ及びＳｉＣ半導体デバイス |
| EP2245217A1 (en) | 2007-12-12 | 2010-11-03 | Dow Corning Corporation | Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes |
| JP4469396B2 (ja) | 2008-01-15 | 2010-05-26 | 新日本製鐵株式会社 | 炭化珪素単結晶インゴット、これから得られる基板及びエピタキシャルウェハ |
| JP5803519B2 (ja) * | 2011-09-29 | 2015-11-04 | トヨタ自動車株式会社 | ＳｉＣ単結晶の製造方法及び製造装置 |
| WO2014034080A1 (ja) | 2012-08-26 | 2014-03-06 | 国立大学法人名古屋大学 | ３Ｃ－ＳｉＣ単結晶およびその製造方法 |
| JP6238249B2 (ja) | 2013-05-20 | 2017-11-29 | 国立研究開発法人産業技術総合研究所 | 炭化珪素単結晶及びその製造方法 |
| JP6152981B2 (ja) | 2013-08-02 | 2017-06-28 | 株式会社デンソー | 炭化珪素単結晶 |
| KR102160863B1 (ko) * | 2014-09-30 | 2020-09-28 | 쇼와 덴코 가부시키가이샤 | 탄화규소 단결정 웨이퍼 |
| JP6090287B2 (ja) | 2014-10-31 | 2017-03-08 | トヨタ自動車株式会社 | ＳｉＣ単結晶の製造方法 |
| WO2017047536A1 (ja) | 2015-09-14 | 2017-03-23 | 新日鐵住金株式会社 | ＳｉＣ単結晶の製造装置、ＳｉＣ単結晶の製造方法及びＳｉＣ単結晶材 |
| JP6595897B2 (ja) * | 2015-12-14 | 2019-10-23 | 東洋炭素株式会社 | 液相エピタキシャル成長方法及び単結晶ＳｉＣの製造方法 |
| JP6200018B2 (ja) | 2016-03-15 | 2017-09-20 | 新日鉄住金マテリアルズ株式会社 | 炭化珪素単結晶ウェハ |
| US20170321345A1 (en) * | 2016-05-06 | 2017-11-09 | Ii-Vi Incorporated | Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof |
| JP6845418B2 (ja) | 2017-01-13 | 2021-03-17 | セントラル硝子株式会社 | 炭化ケイ素単結晶ウェハ、インゴット及びその製造方法 |
| JP2018188330A (ja) * | 2017-05-02 | 2018-11-29 | トヨタ自動車株式会社 | ＳｉＣ単結晶基板の製造方法 |
| JP6758491B2 (ja) * | 2017-05-17 | 2020-09-23 | 三菱電機株式会社 | ＳｉＣエピタキシャルウエハおよびその製造方法 |
| JP7415224B2 (ja) | 2020-03-31 | 2024-01-17 | 株式会社アイシン | 移動装置 |
| CN112779603A (zh) * | 2020-12-23 | 2021-05-11 | 北京天科合达半导体股份有限公司 | 一种高质量低缺陷碳化硅单晶、其制备方法及应用 |
| EP4411030A4 (en) * | 2021-09-30 | 2025-10-08 | Central Glass Co Ltd | SILICON CARBIDE MONOCRYSTALLINE WAFER AND SILICON CARBIDE MONOCRYSTALLINE INGOT |
| JP2023127894A (ja) * | 2022-03-02 | 2023-09-14 | 株式会社デンソー | 炭化珪素単結晶およびその製造方法 |
-
2022
- 2022-09-26 US US18/683,013 patent/US12325935B2/en active Active
- 2022-09-26 WO PCT/JP2022/035722 patent/WO2023054263A1/ja not_active Ceased
- 2022-09-26 KR KR1020237045444A patent/KR20240072094A/ko active Pending
- 2022-09-26 CN CN202280066171.7A patent/CN118043504A/zh active Pending
- 2022-09-26 JP JP2023551471A patent/JPWO2023054263A1/ja active Pending
- 2022-09-26 EP EP22876130.0A patent/EP4411029A4/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202336298A (zh) | 2023-09-16 |
| CN118043504A (zh) | 2024-05-14 |
| US12325935B2 (en) | 2025-06-10 |
| US20240368806A1 (en) | 2024-11-07 |
| EP4411029A1 (en) | 2024-08-07 |
| WO2023054263A1 (ja) | 2023-04-06 |
| KR20240072094A (ko) | 2024-05-23 |
| EP4411029A4 (en) | 2025-10-22 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231114 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250616 |