KR20240047383A - 실리콘 웨이퍼의 세정방법 및 제조방법 - Google Patents
실리콘 웨이퍼의 세정방법 및 제조방법 Download PDFInfo
- Publication number
- KR20240047383A KR20240047383A KR1020247006492A KR20247006492A KR20240047383A KR 20240047383 A KR20240047383 A KR 20240047383A KR 1020247006492 A KR1020247006492 A KR 1020247006492A KR 20247006492 A KR20247006492 A KR 20247006492A KR 20240047383 A KR20240047383 A KR 20240047383A
- Authority
- KR
- South Korea
- Prior art keywords
- cleaning
- silicon wafer
- wafer
- sio
- etching
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 159
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 93
- 239000010703 silicon Substances 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 88
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 119
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 64
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000007864 aqueous solution Substances 0.000 claims abstract description 23
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 10
- 230000003750 conditioning effect Effects 0.000 claims abstract 2
- 238000012545 processing Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 230000003746 surface roughness Effects 0.000 claims description 8
- 238000007788 roughening Methods 0.000 abstract description 17
- 238000005406 washing Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 157
- 238000007254 oxidation reaction Methods 0.000 description 22
- 239000000203 mixture Substances 0.000 description 16
- 230000003647 oxidation Effects 0.000 description 16
- 239000000243 solution Substances 0.000 description 14
- 239000000126 substance Substances 0.000 description 13
- 235000011114 ammonium hydroxide Nutrition 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 230000007547 defect Effects 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000005498 polishing Methods 0.000 description 6
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000005871 repellent Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021142210A JP7279753B2 (ja) | 2021-09-01 | 2021-09-01 | シリコンウェーハの洗浄方法および製造方法 |
| JPJP-P-2021-142210 | 2021-09-01 | ||
| PCT/JP2022/027965 WO2023032488A1 (ja) | 2021-09-01 | 2022-07-19 | シリコンウェーハの洗浄方法および製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240047383A true KR20240047383A (ko) | 2024-04-12 |
Family
ID=85412144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247006492A KR20240047383A (ko) | 2021-09-01 | 2022-07-19 | 실리콘 웨이퍼의 세정방법 및 제조방법 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7279753B2 (ja) |
| KR (1) | KR20240047383A (ja) |
| CN (1) | CN117941033A (ja) |
| TW (1) | TW202312264A (ja) |
| WO (1) | WO2023032488A1 (ja) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766195A (ja) | 1993-06-29 | 1995-03-10 | Sumitomo Sitix Corp | シリコンウェーハの表面酸化膜形成方法 |
| JPH07240394A (ja) | 1994-02-28 | 1995-09-12 | Sumitomo Sitix Corp | 半導体ウェーハの表面洗浄方法 |
| JPH10242107A (ja) | 1997-02-18 | 1998-09-11 | Internatl Business Mach Corp <Ibm> | 超小型電子回路基板の改良された洗浄方法 |
| JPH11121419A (ja) | 1997-10-16 | 1999-04-30 | Nec Corp | 半導体基板の処理薬液及び半導体基板の薬液処理方法 |
| JP2011082372A (ja) | 2009-10-08 | 2011-04-21 | Sumco Corp | シリコンウェーハの洗浄溶液およびそれを使用した洗浄方法 |
| JP2012523706A (ja) | 2009-04-08 | 2012-10-04 | サンソニックス | 基板から汚染物質を除去するための方法および装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3473063B2 (ja) * | 1993-11-15 | 2003-12-02 | 松下電器産業株式会社 | シリコン基板の洗浄方法 |
| JP2012054451A (ja) * | 2010-09-02 | 2012-03-15 | Shin Etsu Chem Co Ltd | 貼り合わせ基板の製造方法および半導体基板洗浄液 |
| JP6206173B2 (ja) | 2013-12-26 | 2017-10-04 | 信越半導体株式会社 | 半導体ウェーハの洗浄方法 |
| US20150357180A1 (en) | 2014-06-10 | 2015-12-10 | Sunedison Semiconductor Limited (Uen201334164H) | Methods for cleaning semiconductor substrates |
| JP7142435B2 (ja) | 2017-12-29 | 2022-09-27 | Ａｉｒｅｖ株式会社 | 要約装置、要約方法、及び要約プログラム |
-
2021
- 2021-09-01 JP JP2021142210A patent/JP7279753B2/ja active Active
-
2022
- 2022-07-19 WO PCT/JP2022/027965 patent/WO2023032488A1/ja active Application Filing
- 2022-07-19 KR KR1020247006492A patent/KR20240047383A/ko unknown
- 2022-07-19 CN CN202280058117.8A patent/CN117941033A/zh active Pending
- 2022-07-22 TW TW111127471A patent/TW202312264A/zh unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766195A (ja) | 1993-06-29 | 1995-03-10 | Sumitomo Sitix Corp | シリコンウェーハの表面酸化膜形成方法 |
| JPH07240394A (ja) | 1994-02-28 | 1995-09-12 | Sumitomo Sitix Corp | 半導体ウェーハの表面洗浄方法 |
| JPH10242107A (ja) | 1997-02-18 | 1998-09-11 | Internatl Business Mach Corp <Ibm> | 超小型電子回路基板の改良された洗浄方法 |
| JPH11121419A (ja) | 1997-10-16 | 1999-04-30 | Nec Corp | 半導体基板の処理薬液及び半導体基板の薬液処理方法 |
| JP2012523706A (ja) | 2009-04-08 | 2012-10-04 | サンソニックス | 基板から汚染物質を除去するための方法および装置 |
| JP2011082372A (ja) | 2009-10-08 | 2011-04-21 | Sumco Corp | シリコンウェーハの洗浄溶液およびそれを使用した洗浄方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117941033A (zh) | 2024-04-26 |
| JP7279753B2 (ja) | 2023-05-23 |
| JP2023035388A (ja) | 2023-03-13 |
| TW202312264A (zh) | 2023-03-16 |
| WO2023032488A1 (ja) | 2023-03-09 |
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