CN117941033A - 硅晶圆的清洗方法及制造方法 - Google Patents

硅晶圆的清洗方法及制造方法 Download PDF

Info

Publication number
CN117941033A
CN117941033A CN202280058117.8A CN202280058117A CN117941033A CN 117941033 A CN117941033 A CN 117941033A CN 202280058117 A CN202280058117 A CN 202280058117A CN 117941033 A CN117941033 A CN 117941033A
Authority
CN
China
Prior art keywords
cleaning
silicon wafer
wafer
sio
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280058117.8A
Other languages
English (en)
Chinese (zh)
Inventor
藤井康太
阿部达夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of CN117941033A publication Critical patent/CN117941033A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN202280058117.8A 2021-09-01 2022-07-19 硅晶圆的清洗方法及制造方法 Pending CN117941033A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-142210 2021-09-01
JP2021142210A JP7279753B2 (ja) 2021-09-01 2021-09-01 シリコンウェーハの洗浄方法および製造方法
PCT/JP2022/027965 WO2023032488A1 (ja) 2021-09-01 2022-07-19 シリコンウェーハの洗浄方法および製造方法

Publications (1)

Publication Number Publication Date
CN117941033A true CN117941033A (zh) 2024-04-26

Family

ID=85412144

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280058117.8A Pending CN117941033A (zh) 2021-09-01 2022-07-19 硅晶圆的清洗方法及制造方法

Country Status (5)

Country Link
JP (1) JP7279753B2 (ja)
KR (1) KR20240047383A (ja)
CN (1) CN117941033A (ja)
TW (1) TW202312264A (ja)
WO (1) WO2023032488A1 (ja)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766195A (ja) 1993-06-29 1995-03-10 Sumitomo Sitix Corp シリコンウェーハの表面酸化膜形成方法
JP3473063B2 (ja) * 1993-11-15 2003-12-02 松下電器産業株式会社 シリコン基板の洗浄方法
JPH07240394A (ja) 1994-02-28 1995-09-12 Sumitomo Sitix Corp 半導体ウェーハの表面洗浄方法
US5800626A (en) 1997-02-18 1998-09-01 International Business Machines Corporation Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates
JP3039483B2 (ja) 1997-10-16 2000-05-08 日本電気株式会社 半導体基板の処理薬液及び半導体基板の薬液処理方法
WO2010118206A2 (en) 2009-04-08 2010-10-14 Sunsonix Process and apparatus for removal of contaminating material from substrates
JP5671793B2 (ja) 2009-10-08 2015-02-18 株式会社Sumco 仕上研磨を施したシリコンウェーハの洗浄方法
JP2012054451A (ja) * 2010-09-02 2012-03-15 Shin Etsu Chem Co Ltd 貼り合わせ基板の製造方法および半導体基板洗浄液
JP6206173B2 (ja) 2013-12-26 2017-10-04 信越半導体株式会社 半導体ウェーハの洗浄方法
US20150357180A1 (en) 2014-06-10 2015-12-10 Sunedison Semiconductor Limited (Uen201334164H) Methods for cleaning semiconductor substrates
JP7142435B2 (ja) 2017-12-29 2022-09-27 Ａｉｒｅｖ株式会社 要約装置、要約方法、及び要約プログラム

Also Published As

Publication number Publication date
TW202312264A (zh) 2023-03-16
KR20240047383A (ko) 2024-04-12
JP2023035388A (ja) 2023-03-13
WO2023032488A1 (ja) 2023-03-09
JP7279753B2 (ja) 2023-05-23

Similar Documents

Publication Publication Date Title
JP5976013B2 (ja) Ｓｏｉ構造体のデバイス層中の金属含有量の減少方法、およびこのような方法により製造されるｓｏｉ構造体
KR100220926B1 (ko) 소수성 실리콘 웨이퍼의 세정방법
US6348157B1 (en) Cleaning method
JP2014508405A5 (ja)
CN101657889B (zh) 制备应变硅的清洁表面的改善的方法
JP2005194294A (ja) 洗浄液及び半導体装置の製造方法
Meuris et al. Implementation of the IMEC-cleaning in advanced CMOS manufacturing
TWI795547B (zh) 矽晶圓的洗淨方法
US20070193686A1 (en) Method of manufacturing semiconductor substrate and method of evaluating quality of semiconductor substrate
US6444582B1 (en) Methods for removing silicon-oxy-nitride layer and wafer surface cleaning
JP4817887B2 (ja) 半導体基板の洗浄方法
EP1950326A1 (en) Method for removal of bulk metal contamination from III-V semiconductor substrates
CN116918041A (zh) 硅晶圆的清洗方法、硅晶圆的制造方法及硅晶圆
CN117941033A (zh) 硅晶圆的清洗方法及制造方法
JP2004260189A (ja) 洗浄液及びこれを利用した基板の洗浄方法
WO2022190830A1 (ja) シリコンウェーハの洗浄方法、シリコンウェーハの製造方法及びシリコンウェーハ
WO2023032497A1 (ja) シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法
JP2022138089A (ja) シリコンウェーハの洗浄方法、シリコンウェーハの製造方法及びシリコンウェーハ
Fyen et al. Cleaning, rinsing and drying issues in post-Cu CMP cleaning: A case study
Park et al. Dynamic wetting behavior of silicon wafers in alkaline solutions of interest to semiconductor processing
Kim et al. Corrosion in aluminum chemical mechanical planarization for sub-quarter-micron dynamic random access memory devices
JP5385566B2 (ja) 研磨クロスの金属汚染評価方法
CN115232680A (zh) 一种用于半导体晶圆清洗过程中的清洗液组合物
Masaoka et al. Effect of Dilute Hydrogen Peroxide in Ultrapure Water on Sige Epitaxial Process
JP2004134600A (ja) シリコンウェハ用洗浄液およびシリコンウェハの洗浄方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination