KR20240046924A - 감광성 수지 조성물 및 레지스트 패턴의 형성 방법 - Google Patents

감광성 수지 조성물 및 레지스트 패턴의 형성 방법 Download PDF

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Publication number
KR20240046924A
KR20240046924A KR1020247010981A KR20247010981A KR20240046924A KR 20240046924 A KR20240046924 A KR 20240046924A KR 1020247010981 A KR1020247010981 A KR 1020247010981A KR 20247010981 A KR20247010981 A KR 20247010981A KR 20240046924 A KR20240046924 A KR 20240046924A
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KR
South Korea
Prior art keywords
mass
photosensitive resin
resin composition
alkali
meth
Prior art date
Application number
KR1020247010981A
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English (en)
Korean (ko)
Inventor
요시타카 가모치
신이치 구니마츠
다카유키 마츠다
Original Assignee
아사히 가세이 가부시키가이샤
아사히 가세이 가부시키가이샤
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Application filed by 아사히 가세이 가부시키가이샤, 아사히 가세이 가부시키가이샤 filed Critical 아사히 가세이 가부시키가이샤
Publication of KR20240046924A publication Critical patent/KR20240046924A/ko

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/46Polymerisation initiated by wave energy or particle radiation
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06Hydrocarbons
    • C08F212/08Styrene
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04Acids; Metal salts or ammonium salts thereof
    • C08F220/06Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/38Treatment before imagewise removal, e.g. prebaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061Etching masks
    • H05K3/064Photoresists
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerisation Methods In General (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Graft Or Block Polymers (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
KR1020247010981A 2018-06-22 2019-06-11 감광성 수지 조성물 및 레지스트 패턴의 형성 방법 KR20240046924A (ko)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2018118562 2018-06-22
JPJP-P-2018-118562 2018-06-22
JP2018118600 2018-06-22
JPJP-P-2018-118614 2018-06-22
JPJP-P-2018-118803 2018-06-22
JP2018118614 2018-06-22
JPJP-P-2018-118600 2018-06-22
JP2018118803 2018-06-22
KR1020207036582A KR102655468B1 (ko) 2018-06-22 2019-06-11 감광성 수지 조성물 및 레지스트 패턴의 형성 방법
PCT/JP2019/023149 WO2019244724A1 (ja) 2018-06-22 2019-06-11 感光性樹脂組成物およびレジストパターンの形成方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020207036582A Division KR102655468B1 (ko) 2018-06-22 2019-06-11 감광성 수지 조성물 및 레지스트 패턴의 형성 방법

Publications (1)

Publication Number Publication Date
KR20240046924A true KR20240046924A (ko) 2024-04-11

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Family Applications (2)

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KR1020247010981A KR20240046924A (ko) 2018-06-22 2019-06-11 감광성 수지 조성물 및 레지스트 패턴의 형성 방법
KR1020207036582A KR102655468B1 (ko) 2018-06-22 2019-06-11 감광성 수지 조성물 및 레지스트 패턴의 형성 방법

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Country Status (5)

Country Link
JP (3) JP7169351B2 (ja)
KR (2) KR20240046924A (ja)
CN (2) CN112352197A (ja)
TW (1) TWI716904B (ja)
WO (1) WO2019244724A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240012326A1 (en) * 2021-01-29 2024-01-11 Asahi Kasei Kabushiki Kaisha Photosensitive element, and method for forming resist pattern
TWI830425B (zh) 2021-10-25 2024-01-21 日商旭化成股份有限公司 感光性元件、及光阻圖案之形成方法
TW202330643A (zh) 2022-01-14 2023-08-01 日商旭化成股份有限公司 感光性樹脂組成物、感光性樹脂積層體、及光阻圖案之形成方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202457A (ja) 1983-05-02 1984-11-16 Asahi Chem Ind Co Ltd 改良された光重合性積層体
JP2010249884A (ja) 2009-04-10 2010-11-04 Dupont Mrc Dryfilm Ltd 光重合性樹脂組成物およびこれを用いた感光性フィルム
JP2013156369A (ja) 2012-01-27 2013-08-15 Asahi Kasei E-Materials Corp 感光性樹脂組成物
JP2014191318A (ja) 2013-03-28 2014-10-06 Asahi Kasei E-Materials Corp レジストパターンの形成方法
JP2016224161A (ja) 2015-05-28 2016-12-28 日立化成株式会社 レジストパターンの形成方法、プリント配線板の製造方法及び感光性エレメント
JP2016224162A (ja) 2015-05-28 2016-12-28 日立化成株式会社 レジストパターンの形成方法、プリント配線板の製造方法及び感光性エレメント

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005031575A (ja) * 2003-07-11 2005-02-03 Asahi Kasei Electronics Co Ltd ブラックマトリックス形成用材料
EP2045629B1 (en) 2006-07-25 2013-09-04 Hitachi Chemical Company, Ltd. Resin composition for optical waveguide, resin film for optical waveguide, and optical waveguide
TW200908839A (en) * 2007-08-09 2009-02-16 Nichigo Morton Co Ltd Solder mask, photoresist pattern forming method and the light-emitting device thereof
JP2009204800A (ja) * 2008-02-27 2009-09-10 Fujifilm Corp 感光性組成物、及び感光性フィルム
JP2015152726A (ja) * 2014-02-13 2015-08-24 三洋化成工業株式会社 感光性樹脂組成物
WO2016017596A1 (ja) 2014-07-28 2016-02-04 日立化成株式会社 感光性樹脂組成物、感光性エレメント、レジストパターンの製造方法及びプリント配線板の製造方法
US10338468B2 (en) 2014-09-24 2019-07-02 Asahi Kasei Kabushiki Kaisha Photosensitive resin composition, photosensitive resin laminate, resin pattern production method, cured film, and display device
CN114437251B (zh) 2015-04-08 2024-02-20 旭化成株式会社 感光性树脂组合物
JP6782417B2 (ja) 2015-07-29 2020-11-11 昭和電工マテリアルズ株式会社 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
KR102443749B1 (ko) * 2015-09-11 2022-09-15 아사히 가세이 가부시키가이샤 감광성 수지 조성물
JP6819160B2 (ja) * 2015-11-26 2021-01-27 Jsr株式会社 感光性樹脂組成物、レジストパターンの形成方法、および金属パターンの製造方法
JP6869263B2 (ja) * 2016-12-05 2021-05-12 旭化成株式会社 感光性樹脂組成物、感光性樹脂積層体、樹脂パターンの製造方法及び硬化膜パターン製造方法
CN116300314A (zh) * 2017-03-01 2023-06-23 旭化成株式会社 感光性树脂组合物
JP6454391B2 (ja) 2017-09-21 2019-01-16 旭化成株式会社 レジストパターンの形成方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202457A (ja) 1983-05-02 1984-11-16 Asahi Chem Ind Co Ltd 改良された光重合性積層体
JP2010249884A (ja) 2009-04-10 2010-11-04 Dupont Mrc Dryfilm Ltd 光重合性樹脂組成物およびこれを用いた感光性フィルム
JP2013156369A (ja) 2012-01-27 2013-08-15 Asahi Kasei E-Materials Corp 感光性樹脂組成物
JP2014191318A (ja) 2013-03-28 2014-10-06 Asahi Kasei E-Materials Corp レジストパターンの形成方法
JP2016224161A (ja) 2015-05-28 2016-12-28 日立化成株式会社 レジストパターンの形成方法、プリント配線板の製造方法及び感光性エレメント
JP2016224162A (ja) 2015-05-28 2016-12-28 日立化成株式会社 レジストパターンの形成方法、プリント配線板の製造方法及び感光性エレメント

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JPWO2019244724A1 (ja) 2021-03-11
WO2019244724A1 (ja) 2019-12-26
CN118778362A (zh) 2024-10-15
JP7169351B2 (ja) 2022-11-10
JP2023010735A (ja) 2023-01-20
TWI716904B (zh) 2021-01-21
JP7480252B2 (ja) 2024-05-09
KR20210013119A (ko) 2021-02-03
JP2024100770A (ja) 2024-07-26
KR102655468B1 (ko) 2024-04-05
TW202005995A (zh) 2020-02-01
CN112352197A (zh) 2021-02-09

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