TWI716904B - 感光性樹脂組合物及抗蝕劑圖案之形成方法 - Google Patents

感光性樹脂組合物及抗蝕劑圖案之形成方法 Download PDF

Info

Publication number
TWI716904B
TWI716904B TW108121218A TW108121218A TWI716904B TW I716904 B TWI716904 B TW I716904B TW 108121218 A TW108121218 A TW 108121218A TW 108121218 A TW108121218 A TW 108121218A TW I716904 B TWI716904 B TW I716904B
Authority
TW
Taiwan
Prior art keywords
photosensitive resin
resin composition
mass
alkali
soluble polymer
Prior art date
Application number
TW108121218A
Other languages
English (en)
Chinese (zh)
Other versions
TW202005995A (zh
Inventor
加持義貴
国松真一
松田隆之
Original Assignee
日商旭化成股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商旭化成股份有限公司 filed Critical 日商旭化成股份有限公司
Publication of TW202005995A publication Critical patent/TW202005995A/zh
Application granted granted Critical
Publication of TWI716904B publication Critical patent/TWI716904B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061—Etching masks
    • H05K3/064—Photoresists
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerisation Methods In General (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Graft Or Block Polymers (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
TW108121218A 2018-06-22 2019-06-19 感光性樹脂組合物及抗蝕劑圖案之形成方法 TWI716904B (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2018118562 2018-06-22
JP2018118600 2018-06-22
JP2018118614 2018-06-22
JP2018-118614 2018-06-22
JP2018-118600 2018-06-22
JP2018-118562 2018-06-22
JP2018-118803 2018-06-22
JP2018118803 2018-06-22

Publications (2)

Publication Number Publication Date
TW202005995A TW202005995A (zh) 2020-02-01
TWI716904B true TWI716904B (zh) 2021-01-21

Family

ID=68983426

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108121218A TWI716904B (zh) 2018-06-22 2019-06-19 感光性樹脂組合物及抗蝕劑圖案之形成方法

Country Status (5)

Country Link
JP (3) JP7169351B2 (ja)
KR (2) KR20240046924A (ja)
CN (2) CN112352197A (ja)
TW (1) TWI716904B (ja)
WO (1) WO2019244724A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240012326A1 (en) * 2021-01-29 2024-01-11 Asahi Kasei Kabushiki Kaisha Photosensitive element, and method for forming resist pattern
TWI830425B (zh) 2021-10-25 2024-01-21 日商旭化成股份有限公司 感光性元件、及光阻圖案之形成方法
TW202330643A (zh) 2022-01-14 2023-08-01 日商旭化成股份有限公司 感光性樹脂組成物、感光性樹脂積層體、及光阻圖案之形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016163540A1 (ja) * 2015-04-08 2016-10-13 旭化成株式会社 感光性樹脂組成物
CN108027559A (zh) * 2015-09-11 2018-05-11 旭化成株式会社 感光性树脂组合物

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202457A (ja) 1983-05-02 1984-11-16 Asahi Chem Ind Co Ltd 改良された光重合性積層体
JP2005031575A (ja) * 2003-07-11 2005-02-03 Asahi Kasei Electronics Co Ltd ブラックマトリックス形成用材料
EP2045629B1 (en) 2006-07-25 2013-09-04 Hitachi Chemical Company, Ltd. Resin composition for optical waveguide, resin film for optical waveguide, and optical waveguide
TW200908839A (en) * 2007-08-09 2009-02-16 Nichigo Morton Co Ltd Solder mask, photoresist pattern forming method and the light-emitting device thereof
JP2009204800A (ja) * 2008-02-27 2009-09-10 Fujifilm Corp 感光性組成物、及び感光性フィルム
JP2010249884A (ja) 2009-04-10 2010-11-04 Dupont Mrc Dryfilm Ltd 光重合性樹脂組成物およびこれを用いた感光性フィルム
JP5948539B2 (ja) 2012-01-27 2016-07-06 旭化成株式会社 感光性樹脂組成物
JP6257164B2 (ja) 2013-03-28 2018-01-10 旭化成株式会社 レジストパターンの形成方法
JP2015152726A (ja) * 2014-02-13 2015-08-24 三洋化成工業株式会社 感光性樹脂組成物
WO2016017596A1 (ja) 2014-07-28 2016-02-04 日立化成株式会社 感光性樹脂組成物、感光性エレメント、レジストパターンの製造方法及びプリント配線板の製造方法
US10338468B2 (en) 2014-09-24 2019-07-02 Asahi Kasei Kabushiki Kaisha Photosensitive resin composition, photosensitive resin laminate, resin pattern production method, cured film, and display device
JP2016224162A (ja) 2015-05-28 2016-12-28 日立化成株式会社 レジストパターンの形成方法、プリント配線板の製造方法及び感光性エレメント
JP2016224161A (ja) 2015-05-28 2016-12-28 日立化成株式会社 レジストパターンの形成方法、プリント配線板の製造方法及び感光性エレメント
JP6782417B2 (ja) 2015-07-29 2020-11-11 昭和電工マテリアルズ株式会社 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP6819160B2 (ja) * 2015-11-26 2021-01-27 Jsr株式会社 感光性樹脂組成物、レジストパターンの形成方法、および金属パターンの製造方法
JP6869263B2 (ja) * 2016-12-05 2021-05-12 旭化成株式会社 感光性樹脂組成物、感光性樹脂積層体、樹脂パターンの製造方法及び硬化膜パターン製造方法
CN116300314A (zh) * 2017-03-01 2023-06-23 旭化成株式会社 感光性树脂组合物
JP6454391B2 (ja) 2017-09-21 2019-01-16 旭化成株式会社 レジストパターンの形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016163540A1 (ja) * 2015-04-08 2016-10-13 旭化成株式会社 感光性樹脂組成物
CN108027559A (zh) * 2015-09-11 2018-05-11 旭化成株式会社 感光性树脂组合物

Also Published As

Publication number Publication date
JPWO2019244724A1 (ja) 2021-03-11
WO2019244724A1 (ja) 2019-12-26
KR20240046924A (ko) 2024-04-11
CN118778362A (zh) 2024-10-15
JP7169351B2 (ja) 2022-11-10
JP2023010735A (ja) 2023-01-20
JP7480252B2 (ja) 2024-05-09
KR20210013119A (ko) 2021-02-03
JP2024100770A (ja) 2024-07-26
KR102655468B1 (ko) 2024-04-05
TW202005995A (zh) 2020-02-01
CN112352197A (zh) 2021-02-09

Similar Documents

Publication Publication Date Title
JP7340581B2 (ja) 感光性樹脂組成物
JP7480252B2 (ja) 感光性樹脂組成物およびレジストパターンの形成方法
JP7340643B2 (ja) 感光性樹脂組成物及び感光性樹脂積層体
JP7170723B2 (ja) 感光性樹脂組成物およびレジストパターンの形成方法
JP2023061998A (ja) 感光性樹脂組成物及びレジストパターンの形成方法
JP2005215142A (ja) 感光性樹脂組成物及び積層体
TWI818456B (zh) 感光性樹脂積層體及其製造方法
TWI752606B (zh) 感光性樹脂組合物及感光性元件
WO2018105620A1 (ja) 感光性樹脂組成物及び感光性樹脂積層体
CN108469717B (zh) 感光性树脂组合物及感光性树脂层叠体
WO2019142786A1 (ja) 感光性樹脂積層体およびその製造方法
JP2010271395A (ja) 感光性樹脂組成物、感光性樹脂積層体、レジストパターン形成方法及び導体パターンの製造方法
JP2009229660A (ja) 感光性樹脂組成物および積層体