KR20230130074A - 기판 처리 장치, 기판 처리 방법 및 기판 제조 방법 - Google Patents

기판 처리 장치, 기판 처리 방법 및 기판 제조 방법 Download PDF

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Publication number
KR20230130074A
KR20230130074A KR1020237027150A KR20237027150A KR20230130074A KR 20230130074 A KR20230130074 A KR 20230130074A KR 1020237027150 A KR1020237027150 A KR 1020237027150A KR 20237027150 A KR20237027150 A KR 20237027150A KR 20230130074 A KR20230130074 A KR 20230130074A
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KR
South Korea
Prior art keywords
substrate
laser
wafer
laser light
absorption layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020237027150A
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English (en)
Korean (ko)
Inventor
하야토 타노우에
켄토 아라키
요헤이 야마시타
고우스케 시라이시
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20230130074A publication Critical patent/KR20230130074A/ko
Ceased legal-status Critical Current

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    • H01L21/67092—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
    • H01L21/185—
    • H01L21/304—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
KR1020237027150A 2021-01-15 2022-01-04 기판 처리 장치, 기판 처리 방법 및 기판 제조 방법 Ceased KR20230130074A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021005325 2021-01-15
JPJP-P-2021-005325 2021-01-15
PCT/JP2022/000014 WO2022153886A1 (ja) 2021-01-15 2022-01-04 基板処理装置、基板処理方法及び基板製造方法

Publications (1)

Publication Number Publication Date
KR20230130074A true KR20230130074A (ko) 2023-09-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237027150A Ceased KR20230130074A (ko) 2021-01-15 2022-01-04 기판 처리 장치, 기판 처리 방법 및 기판 제조 방법

Country Status (6)

Country Link
US (1) US20240312804A1 (https=)
JP (1) JP7607678B2 (https=)
KR (1) KR20230130074A (https=)
CN (1) CN116802770A (https=)
TW (1) TWI903011B (https=)
WO (1) WO2022153886A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI903011B (zh) * 2021-01-15 2025-11-01 日商東京威力科創股份有限公司 基板處理裝置、基板處理方法及基板製造方法
JP7719633B2 (ja) * 2021-06-02 2025-08-06 株式会社ディスコ ウェーハの加工方法
WO2025216062A1 (ja) * 2024-04-09 2025-10-16 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220749A (ja) 2006-02-14 2007-08-30 Seiko Epson Corp 半導体装置の製造方法

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JP3196132B2 (ja) * 1992-11-16 2001-08-06 東京エレクトロン株式会社 液晶ディスプレイ基板の製造方法、半導体結晶の評価方法、半導体結晶薄膜の製造方法及び半導体結晶薄膜の製造装置
WO2002084631A1 (en) * 2001-04-11 2002-10-24 Sony Corporation Element transfer method, element arrangmenet method using the same, and image display apparatus production method
JP4565804B2 (ja) * 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
US7534498B2 (en) * 2002-06-03 2009-05-19 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
WO2005024908A2 (en) * 2003-09-05 2005-03-17 Si2 Technologies, Inc. Laser transfer articles and method of making
JP2009135448A (ja) * 2007-11-01 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法及び半導体装置の作製方法
US8003483B2 (en) * 2008-03-18 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP2010222233A (ja) * 2009-02-27 2010-10-07 Central Glass Co Ltd 断熱合わせガラス
JP5257314B2 (ja) * 2009-09-29 2013-08-07 大日本印刷株式会社 積層体、準備用支持体、積層体の製造方法、及びデバイスの製造方法
JP2012015150A (ja) * 2010-06-29 2012-01-19 Ushio Inc レーザリフトオフ方法及びレーザリフトオフ装置
JP5802106B2 (ja) * 2010-11-15 2015-10-28 東京応化工業株式会社 積層体、および分離方法
JP5909854B2 (ja) 2011-03-01 2016-04-27 ウシオ電機株式会社 レーザリフトオフ装置およびレーザリフトオフ方法
JP2012187618A (ja) * 2011-03-11 2012-10-04 V Technology Co Ltd ガラス基板のレーザ加工装置
US9214353B2 (en) 2012-02-26 2015-12-15 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
US9586291B2 (en) * 2012-11-28 2017-03-07 Globalfoundries Inc Adhesives for bonding handler wafers to device wafers and enabling mid-wavelength infrared laser ablation release
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JPWO2015182558A1 (ja) * 2014-05-28 2017-04-20 日本電気硝子株式会社 ガラス基板の製造方法、及び電子デバイス
JP6976745B2 (ja) * 2017-06-30 2021-12-08 株式会社ディスコ ウエーハ生成装置
JP7123759B2 (ja) 2018-01-19 2022-08-23 パナソニックホールディングス株式会社 レーザスライス装置、及びレーザスライス方法
WO2019220666A1 (ja) * 2018-05-17 2019-11-21 信越エンジニアリング株式会社 ワーク分離装置及びワーク分離方法
TWI903011B (zh) * 2021-01-15 2025-11-01 日商東京威力科創股份有限公司 基板處理裝置、基板處理方法及基板製造方法
TW202236925A (zh) * 2021-01-15 2022-09-16 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
CN116723910A (zh) * 2021-01-15 2023-09-08 东京毅力科创株式会社 基板处理装置和基板处理方法
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Publication number Priority date Publication date Assignee Title
JP2007220749A (ja) 2006-02-14 2007-08-30 Seiko Epson Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
TWI903011B (zh) 2025-11-01
JPWO2022153886A1 (https=) 2022-07-21
JP7607678B2 (ja) 2024-12-27
US20240312804A1 (en) 2024-09-19
WO2022153886A1 (ja) 2022-07-21
TW202234508A (zh) 2022-09-01
CN116802770A (zh) 2023-09-22

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