CN116802770A - 基板处理装置、基板处理方法以及基板制造方法 - Google Patents

基板处理装置、基板处理方法以及基板制造方法 Download PDF

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Publication number
CN116802770A
CN116802770A CN202280008888.6A CN202280008888A CN116802770A CN 116802770 A CN116802770 A CN 116802770A CN 202280008888 A CN202280008888 A CN 202280008888A CN 116802770 A CN116802770 A CN 116802770A
Authority
CN
China
Prior art keywords
substrate
laser
wafer
laser light
absorbing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280008888.6A
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English (en)
Chinese (zh)
Inventor
田之上隼斗
荒木健人
山下阳平
白石豪介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN116802770A publication Critical patent/CN116802770A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
CN202280008888.6A 2021-01-15 2022-01-04 基板处理装置、基板处理方法以及基板制造方法 Pending CN116802770A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021005325 2021-01-15
JP2021-005325 2021-01-15
PCT/JP2022/000014 WO2022153886A1 (ja) 2021-01-15 2022-01-04 基板処理装置、基板処理方法及び基板製造方法

Publications (1)

Publication Number Publication Date
CN116802770A true CN116802770A (zh) 2023-09-22

Family

ID=82447585

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280008888.6A Pending CN116802770A (zh) 2021-01-15 2022-01-04 基板处理装置、基板处理方法以及基板制造方法

Country Status (6)

Country Link
US (1) US20240312804A1 (https=)
JP (1) JP7607678B2 (https=)
KR (1) KR20230130074A (https=)
CN (1) CN116802770A (https=)
TW (1) TWI903011B (https=)
WO (1) WO2022153886A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI903011B (zh) * 2021-01-15 2025-11-01 日商東京威力科創股份有限公司 基板處理裝置、基板處理方法及基板製造方法
JP7719633B2 (ja) * 2021-06-02 2025-08-06 株式会社ディスコ ウェーハの加工方法
WO2025216062A1 (ja) * 2024-04-09 2025-10-16 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体

Citations (6)

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JPH08129189A (ja) * 1992-11-16 1996-05-21 Tokyo Electron Ltd 液晶ディスプレイ基板の製造方法、その装置、半導体結晶の評価方法、半導体結晶薄膜の製造方法及び半導体結晶薄膜の製造装置
JP2012187618A (ja) * 2011-03-11 2012-10-04 V Technology Co Ltd ガラス基板のレーザ加工装置
WO2015182558A1 (ja) * 2014-05-28 2015-12-03 日本電気硝子株式会社 ガラス基板の製造方法、及び電子デバイス
US20170125268A1 (en) * 2013-08-01 2017-05-04 International Business Machines Corporation Wafer debonding using mid-wavelength infrared radiation ablation
CN109216159A (zh) * 2017-06-30 2019-01-15 株式会社迪思科 晶片生成装置
JP2019126844A (ja) * 2018-01-19 2019-08-01 パナソニック株式会社 レーザスライス装置、及びレーザスライス方法

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JP4565804B2 (ja) * 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
US7534498B2 (en) * 2002-06-03 2009-05-19 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
WO2005024908A2 (en) * 2003-09-05 2005-03-17 Si2 Technologies, Inc. Laser transfer articles and method of making
JP2007220749A (ja) 2006-02-14 2007-08-30 Seiko Epson Corp 半導体装置の製造方法
JP2009135448A (ja) * 2007-11-01 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法及び半導体装置の作製方法
US8003483B2 (en) * 2008-03-18 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP2010222233A (ja) * 2009-02-27 2010-10-07 Central Glass Co Ltd 断熱合わせガラス
JP5257314B2 (ja) * 2009-09-29 2013-08-07 大日本印刷株式会社 積層体、準備用支持体、積層体の製造方法、及びデバイスの製造方法
JP2012015150A (ja) * 2010-06-29 2012-01-19 Ushio Inc レーザリフトオフ方法及びレーザリフトオフ装置
JP5802106B2 (ja) * 2010-11-15 2015-10-28 東京応化工業株式会社 積層体、および分離方法
JP5909854B2 (ja) 2011-03-01 2016-04-27 ウシオ電機株式会社 レーザリフトオフ装置およびレーザリフトオフ方法
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TW202236925A (zh) * 2021-01-15 2022-09-16 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08129189A (ja) * 1992-11-16 1996-05-21 Tokyo Electron Ltd 液晶ディスプレイ基板の製造方法、その装置、半導体結晶の評価方法、半導体結晶薄膜の製造方法及び半導体結晶薄膜の製造装置
JP2012187618A (ja) * 2011-03-11 2012-10-04 V Technology Co Ltd ガラス基板のレーザ加工装置
US20170125268A1 (en) * 2013-08-01 2017-05-04 International Business Machines Corporation Wafer debonding using mid-wavelength infrared radiation ablation
WO2015182558A1 (ja) * 2014-05-28 2015-12-03 日本電気硝子株式会社 ガラス基板の製造方法、及び電子デバイス
CN109216159A (zh) * 2017-06-30 2019-01-15 株式会社迪思科 晶片生成装置
JP2019126844A (ja) * 2018-01-19 2019-08-01 パナソニック株式会社 レーザスライス装置、及びレーザスライス方法

Also Published As

Publication number Publication date
TWI903011B (zh) 2025-11-01
JPWO2022153886A1 (https=) 2022-07-21
KR20230130074A (ko) 2023-09-11
JP7607678B2 (ja) 2024-12-27
US20240312804A1 (en) 2024-09-19
WO2022153886A1 (ja) 2022-07-21
TW202234508A (zh) 2022-09-01

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