TWI903011B - 基板處理裝置、基板處理方法及基板製造方法 - Google Patents

基板處理裝置、基板處理方法及基板製造方法

Info

Publication number
TWI903011B
TWI903011B TW111100003A TW111100003A TWI903011B TW I903011 B TWI903011 B TW I903011B TW 111100003 A TW111100003 A TW 111100003A TW 111100003 A TW111100003 A TW 111100003A TW I903011 B TWI903011 B TW I903011B
Authority
TW
Taiwan
Prior art keywords
laser
substrate
absorption layer
spacing
wafer
Prior art date
Application number
TW111100003A
Other languages
English (en)
Chinese (zh)
Other versions
TW202234508A (zh
Inventor
田之上隼斗
荒木健人
山下陽平
白石豪介
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202234508A publication Critical patent/TW202234508A/zh
Application granted granted Critical
Publication of TWI903011B publication Critical patent/TWI903011B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
TW111100003A 2021-01-15 2022-01-03 基板處理裝置、基板處理方法及基板製造方法 TWI903011B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021005325 2021-01-15
JP2021-005325 2021-01-15

Publications (2)

Publication Number Publication Date
TW202234508A TW202234508A (zh) 2022-09-01
TWI903011B true TWI903011B (zh) 2025-11-01

Family

ID=82447585

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111100003A TWI903011B (zh) 2021-01-15 2022-01-03 基板處理裝置、基板處理方法及基板製造方法

Country Status (6)

Country Link
US (1) US20240312804A1 (https=)
JP (1) JP7607678B2 (https=)
KR (1) KR20230130074A (https=)
CN (1) CN116802770A (https=)
TW (1) TWI903011B (https=)
WO (1) WO2022153886A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI903011B (zh) * 2021-01-15 2025-11-01 日商東京威力科創股份有限公司 基板處理裝置、基板處理方法及基板製造方法
JP7719633B2 (ja) * 2021-06-02 2025-08-06 株式会社ディスコ ウェーハの加工方法
WO2025216062A1 (ja) * 2024-04-09 2025-10-16 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070048891A1 (en) * 2001-04-11 2007-03-01 Sony Corporation Device transferring method, and device arraying method
US20080318030A1 (en) * 2003-09-05 2008-12-25 Si2 Technologies, Inc. Laser transfer articles and method of making
JP2012015150A (ja) * 2010-06-29 2012-01-19 Ushio Inc レーザリフトオフ方法及びレーザリフトオフ装置
JP2016525801A (ja) * 2013-08-01 2016-08-25 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 中波長赤外線アブレーションを用いるウェハ剥離

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3196132B2 (ja) * 1992-11-16 2001-08-06 東京エレクトロン株式会社 液晶ディスプレイ基板の製造方法、半導体結晶の評価方法、半導体結晶薄膜の製造方法及び半導体結晶薄膜の製造装置
JP4565804B2 (ja) * 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
US7534498B2 (en) * 2002-06-03 2009-05-19 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
JP2007220749A (ja) 2006-02-14 2007-08-30 Seiko Epson Corp 半導体装置の製造方法
JP2009135448A (ja) * 2007-11-01 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法及び半導体装置の作製方法
US8003483B2 (en) * 2008-03-18 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP2010222233A (ja) * 2009-02-27 2010-10-07 Central Glass Co Ltd 断熱合わせガラス
JP5257314B2 (ja) * 2009-09-29 2013-08-07 大日本印刷株式会社 積層体、準備用支持体、積層体の製造方法、及びデバイスの製造方法
JP5802106B2 (ja) * 2010-11-15 2015-10-28 東京応化工業株式会社 積層体、および分離方法
JP5909854B2 (ja) 2011-03-01 2016-04-27 ウシオ電機株式会社 レーザリフトオフ装置およびレーザリフトオフ方法
JP2012187618A (ja) * 2011-03-11 2012-10-04 V Technology Co Ltd ガラス基板のレーザ加工装置
US9214353B2 (en) 2012-02-26 2015-12-15 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
US9586291B2 (en) * 2012-11-28 2017-03-07 Globalfoundries Inc Adhesives for bonding handler wafers to device wafers and enabling mid-wavelength infrared laser ablation release
US20140144593A1 (en) * 2012-11-28 2014-05-29 International Business Machiness Corporation Wafer debonding using long-wavelength infrared radiation ablation
JPWO2015182558A1 (ja) * 2014-05-28 2017-04-20 日本電気硝子株式会社 ガラス基板の製造方法、及び電子デバイス
JP6976745B2 (ja) * 2017-06-30 2021-12-08 株式会社ディスコ ウエーハ生成装置
JP7123759B2 (ja) 2018-01-19 2022-08-23 パナソニックホールディングス株式会社 レーザスライス装置、及びレーザスライス方法
WO2019220666A1 (ja) * 2018-05-17 2019-11-21 信越エンジニアリング株式会社 ワーク分離装置及びワーク分離方法
TWI903011B (zh) * 2021-01-15 2025-11-01 日商東京威力科創股份有限公司 基板處理裝置、基板處理方法及基板製造方法
TW202236925A (zh) * 2021-01-15 2022-09-16 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
CN116723910A (zh) * 2021-01-15 2023-09-08 东京毅力科创株式会社 基板处理装置和基板处理方法
US12300615B2 (en) * 2022-11-17 2025-05-13 International Business Machines Corporation Infrared debond damage mitigation by copper fill pattern

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070048891A1 (en) * 2001-04-11 2007-03-01 Sony Corporation Device transferring method, and device arraying method
US20080318030A1 (en) * 2003-09-05 2008-12-25 Si2 Technologies, Inc. Laser transfer articles and method of making
JP2012015150A (ja) * 2010-06-29 2012-01-19 Ushio Inc レーザリフトオフ方法及びレーザリフトオフ装置
JP2016525801A (ja) * 2013-08-01 2016-08-25 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 中波長赤外線アブレーションを用いるウェハ剥離

Also Published As

Publication number Publication date
JPWO2022153886A1 (https=) 2022-07-21
KR20230130074A (ko) 2023-09-11
JP7607678B2 (ja) 2024-12-27
US20240312804A1 (en) 2024-09-19
WO2022153886A1 (ja) 2022-07-21
TW202234508A (zh) 2022-09-01
CN116802770A (zh) 2023-09-22

Similar Documents

Publication Publication Date Title
JP7720425B2 (ja) 改質層形成装置
JP7109537B2 (ja) 基板処理システム及び基板処理方法
TWI870947B (zh) 基板處理系統及基板處理方法
TWI903011B (zh) 基板處理裝置、基板處理方法及基板製造方法
CN115335968A (zh) 基板处理方法和基板处理装置
JP7577137B2 (ja) 基板処理装置及び基板処理方法
JP7577138B2 (ja) 基板処理装置及び基板処理方法
JP7285151B2 (ja) 支持体剥離方法及び支持体剥離システム
JP7690038B2 (ja) 基板処理方法及び基板処理装置
TWI913387B (zh) 基板處理裝置及基板處理方法
JP2023180066A (ja) 基板処理装置及び位置調整方法