JP7607678B2 - 基板処理装置、基板処理方法及び基板製造方法 - Google Patents

基板処理装置、基板処理方法及び基板製造方法 Download PDF

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Publication number
JP7607678B2
JP7607678B2 JP2022575531A JP2022575531A JP7607678B2 JP 7607678 B2 JP7607678 B2 JP 7607678B2 JP 2022575531 A JP2022575531 A JP 2022575531A JP 2022575531 A JP2022575531 A JP 2022575531A JP 7607678 B2 JP7607678 B2 JP 7607678B2
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Japan
Prior art keywords
laser
substrate
pitch
laser light
wafer
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JP2022575531A
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Japanese (ja)
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JPWO2022153886A1 (https=
JPWO2022153886A5 (https=
Inventor
隼斗 田之上
健人 荒木
陽平 山下
豪介 白石
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
JP2022575531A 2021-01-15 2022-01-04 基板処理装置、基板処理方法及び基板製造方法 Active JP7607678B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021005325 2021-01-15
JP2021005325 2021-01-15
PCT/JP2022/000014 WO2022153886A1 (ja) 2021-01-15 2022-01-04 基板処理装置、基板処理方法及び基板製造方法

Publications (3)

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JPWO2022153886A1 JPWO2022153886A1 (https=) 2022-07-21
JPWO2022153886A5 JPWO2022153886A5 (https=) 2023-09-26
JP7607678B2 true JP7607678B2 (ja) 2024-12-27

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Country Link
US (1) US20240312804A1 (https=)
JP (1) JP7607678B2 (https=)
KR (1) KR20230130074A (https=)
CN (1) CN116802770A (https=)
TW (1) TWI903011B (https=)
WO (1) WO2022153886A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI903011B (zh) * 2021-01-15 2025-11-01 日商東京威力科創股份有限公司 基板處理裝置、基板處理方法及基板製造方法
JP7719633B2 (ja) * 2021-06-02 2025-08-06 株式会社ディスコ ウェーハの加工方法
WO2025216062A1 (ja) * 2024-04-09 2025-10-16 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体

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JP2012015150A (ja) 2010-06-29 2012-01-19 Ushio Inc レーザリフトオフ方法及びレーザリフトオフ装置
JP2012182278A (ja) 2011-03-01 2012-09-20 Ushio Inc レーザリフトオフ装置およびレーザリフトオフ方法
JP2015516672A (ja) 2012-02-26 2015-06-11 ソレクセル、インコーポレイテッド レーザ分割及び装置層移設のためのシステム及び方法
JP2016525801A (ja) 2013-08-01 2016-08-25 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 中波長赤外線アブレーションを用いるウェハ剥離
JP2019126844A (ja) 2018-01-19 2019-08-01 パナソニック株式会社 レーザスライス装置、及びレーザスライス方法

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WO2002084631A1 (en) * 2001-04-11 2002-10-24 Sony Corporation Element transfer method, element arrangmenet method using the same, and image display apparatus production method
JP4565804B2 (ja) * 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
US7534498B2 (en) * 2002-06-03 2009-05-19 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
WO2005024908A2 (en) * 2003-09-05 2005-03-17 Si2 Technologies, Inc. Laser transfer articles and method of making
JP2007220749A (ja) 2006-02-14 2007-08-30 Seiko Epson Corp 半導体装置の製造方法
JP2009135448A (ja) * 2007-11-01 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法及び半導体装置の作製方法
US8003483B2 (en) * 2008-03-18 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP2010222233A (ja) * 2009-02-27 2010-10-07 Central Glass Co Ltd 断熱合わせガラス
JP5257314B2 (ja) * 2009-09-29 2013-08-07 大日本印刷株式会社 積層体、準備用支持体、積層体の製造方法、及びデバイスの製造方法
JP5802106B2 (ja) * 2010-11-15 2015-10-28 東京応化工業株式会社 積層体、および分離方法
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TWI903011B (zh) * 2021-01-15 2025-11-01 日商東京威力科創股份有限公司 基板處理裝置、基板處理方法及基板製造方法
TW202236925A (zh) * 2021-01-15 2022-09-16 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
CN116723910A (zh) * 2021-01-15 2023-09-08 东京毅力科创株式会社 基板处理装置和基板处理方法
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JP2012015150A (ja) 2010-06-29 2012-01-19 Ushio Inc レーザリフトオフ方法及びレーザリフトオフ装置
JP2012182278A (ja) 2011-03-01 2012-09-20 Ushio Inc レーザリフトオフ装置およびレーザリフトオフ方法
JP2015516672A (ja) 2012-02-26 2015-06-11 ソレクセル、インコーポレイテッド レーザ分割及び装置層移設のためのシステム及び方法
JP2016525801A (ja) 2013-08-01 2016-08-25 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 中波長赤外線アブレーションを用いるウェハ剥離
JP2019126844A (ja) 2018-01-19 2019-08-01 パナソニック株式会社 レーザスライス装置、及びレーザスライス方法

Also Published As

Publication number Publication date
TWI903011B (zh) 2025-11-01
JPWO2022153886A1 (https=) 2022-07-21
KR20230130074A (ko) 2023-09-11
US20240312804A1 (en) 2024-09-19
WO2022153886A1 (ja) 2022-07-21
TW202234508A (zh) 2022-09-01
CN116802770A (zh) 2023-09-22

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