KR20230104598A - 촬상 장치, 촬상 장치의 제조 방법 및 전자 기기 - Google Patents

촬상 장치, 촬상 장치의 제조 방법 및 전자 기기 Download PDF

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Publication number
KR20230104598A
KR20230104598A KR1020237012591A KR20237012591A KR20230104598A KR 20230104598 A KR20230104598 A KR 20230104598A KR 1020237012591 A KR1020237012591 A KR 1020237012591A KR 20237012591 A KR20237012591 A KR 20237012591A KR 20230104598 A KR20230104598 A KR 20230104598A
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South Korea
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semiconductor substrate
imaging device
film
insulating film
region
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KR1020237012591A
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Korean (ko)
Inventor
다케야 모치즈키
게이이치 나카자와
신이치 요시다
겐야 니시오
노부토시 후지이
스구루 사이토
마사키 오카모토
료스케 가마타니
유이치 야마모토
가즈타카 이즈카시
유키 미야나미
히로타카 요시오카
히로시 호리코시
다쿠야 구로토리
슌스케 후루세
šœ스케 후루세
다카요시 혼다
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20230104598A publication Critical patent/KR20230104598A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H01L27/14636—
    • H01L23/5226—
    • H01L23/532—
    • H01L27/1462—
    • H01L27/14634—
    • H01L27/14687—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4451—Semiconductor materials, e.g. polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020237012591A 2020-11-09 2021-10-11 촬상 장치, 촬상 장치의 제조 방법 및 전자 기기 Ceased KR20230104598A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2020-186610 2020-11-09
JP2020186610 2020-11-09
JPJP-P-2021-131322 2021-08-11
JP2021131322 2021-08-11
PCT/JP2021/037502 WO2022097427A1 (ja) 2020-11-09 2021-10-11 撮像装置、撮像装置の製造方法及び電子機器

Publications (1)

Publication Number Publication Date
KR20230104598A true KR20230104598A (ko) 2023-07-10

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KR1020237012591A Ceased KR20230104598A (ko) 2020-11-09 2021-10-11 촬상 장치, 촬상 장치의 제조 방법 및 전자 기기

Country Status (7)

Country Link
US (1) US20240006448A1 (https=)
EP (1) EP4243055B1 (https=)
JP (1) JPWO2022097427A1 (https=)
KR (1) KR20230104598A (https=)
CN (1) CN116210076A (https=)
TW (1) TW202236425A (https=)
WO (1) WO2022097427A1 (https=)

Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
JP2024138782A (ja) * 2023-03-27 2024-10-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
US20250072148A1 (en) * 2023-08-23 2025-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench isolation structure for image sensor

Citations (1)

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Publication number Priority date Publication date Assignee Title
WO2019131965A1 (ja) 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像素子

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JP2684846B2 (ja) * 1990-01-12 1997-12-03 日本電気株式会社 半導体装置の製造方法
JP2639355B2 (ja) * 1994-09-01 1997-08-13 日本電気株式会社 半導体装置およびその製造方法
DE60141391D1 (de) * 2000-03-10 2010-04-08 Chippac Inc Flipchip-Verbindungsstruktur und dessen Herstellungsverfahren
JP5654471B2 (ja) * 2008-10-15 2015-01-14 オー・アー・セー・マイクロテック・アクチボラゲット ビア配線を作るための方法
US10361244B2 (en) * 2014-07-15 2019-07-23 Brillinics Inc. Solid-state imaging device, method for producing solid-state imaging device, and electronic apparatus
JP2016033972A (ja) * 2014-07-31 2016-03-10 キヤノン株式会社 撮像装置及び撮像システム
TWI747805B (zh) * 2014-10-08 2021-12-01 日商索尼半導體解決方案公司 攝像裝置及製造方法、以及電子機器
JP2018117102A (ja) * 2017-01-20 2018-07-26 ソニーセミコンダクタソリューションズ株式会社 半導体装置
JP2018129412A (ja) * 2017-02-09 2018-08-16 ソニーセミコンダクタソリューションズ株式会社 半導体装置、および半導体装置の製造方法
WO2018186197A1 (ja) * 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
KR102372748B1 (ko) * 2017-04-24 2022-03-11 에스케이하이닉스 주식회사 적층형 이미지 센서
WO2019150981A1 (ja) * 2018-02-01 2019-08-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2020004936A (ja) * 2018-07-02 2020-01-09 株式会社デンソー 半導体装置およびその製造方法
DE112019005071T5 (de) * 2018-10-12 2021-07-15 Sony Semiconductor Solutions Corporation Halbleitervorrichtung und festkörperbildsensor
TWI890521B (zh) * 2018-11-21 2025-07-11 日商索尼半導體解決方案公司 固體攝像元件
JP7475331B2 (ja) * 2019-03-29 2024-04-26 ソニーセミコンダクタソリューションズ株式会社 撮像装置

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
WO2019131965A1 (ja) 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像素子

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EP4243055A1 (en) 2023-09-13
US20240006448A1 (en) 2024-01-04
TW202236425A (zh) 2022-09-16
JPWO2022097427A1 (https=) 2022-05-12
EP4243055B1 (en) 2026-01-28
EP4243055A4 (en) 2024-01-10
CN116210076A (zh) 2023-06-02
WO2022097427A1 (ja) 2022-05-12

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