JP6883217B2 - 半導体装置及び半導体装置の製造方法、並びに、固体撮像素子及び電子機器 - Google Patents
半導体装置及び半導体装置の製造方法、並びに、固体撮像素子及び電子機器 Download PDFInfo
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- JP6883217B2 JP6883217B2 JP2017566510A JP2017566510A JP6883217B2 JP 6883217 B2 JP6883217 B2 JP 6883217B2 JP 2017566510 A JP2017566510 A JP 2017566510A JP 2017566510 A JP2017566510 A JP 2017566510A JP 6883217 B2 JP6883217 B2 JP 6883217B2
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Description
半導体基板の第1面側に配置された半導体素子、
半導体基板を半導体基板の厚さ方向に貫通して設けられ、半導体素子で得られた電荷を半導体基板の第2面側に導く貫通電極、及び、
貫通電極によって導かれた電荷に基づく電気信号を出力する増幅トランジスタを備えており、
増幅トランジスタは、貫通電極をゲート電極とし、貫通電極の周りにソース領域及びドレイン領域を有する。
半導体基板の第1面側に配置された半導体素子、
半導体基板を半導体基板の厚さ方向に貫通して設けられ、半導体素子で得られた電荷を半導体基板の第2面側に導く貫通電極、及び、
貫通電極によって導かれた電荷に基づく電気信号を出力する増幅トランジスタを備える半導体装置の製造に当たって、
貫通電極を増幅トランジスタのゲート電極とし、貫通電極の周りに増幅トランジスタのソース領域及びドレイン領域を形成する。
半導体基板の第1面側に配置された光電変換素子、
半導体基板を半導体基板の厚さ方向に貫通して設けられ、光電変換素子での光電変換によって得られた電荷を半導体基板の第2面側に導く貫通電極、及び、
貫通電極によって導かれた電荷に基づく電気信号を出力する増幅トランジスタを備えており、
増幅トランジスタは、貫通電極をゲート電極とし、貫通電極の周りにソース領域及びドレイン領域を有する。また、上記の目的を達成するための本開示の電子機器は、上記の構成の固体撮像素子を備える。
1.本開示の半導体装置及びその製造方法、並びに、固体撮像素子及び電子機器、全般に関する説明
2.実施例1(本開示の一態様に係る固体撮像素子)
3.実施例2(実施例1の変形)
4.実施例3(実施例1の変形)
5.実施例4(実施例1の変形)
6.実施例5(実施例1〜実施例4の変形)
7.実施例6(実施例1の固体撮像素子の製造方法)
8.参考例(貫通電極とトランジスタとを混載した場合の基本構成)
9.実施例7(増幅トランジスタのチャネル構造)
10.実施例8(電子変換型の縦方向2色分光の裏面照射型固体撮像素子)
11.実施例9(実施例8の変形)
12.実施例10(実施例9の変形)
13.実施例11(実施例8の変形)
14.実施例12(高性能なトランジスタ動作及び分離特性を有する固体撮像素子)
15.実施例13(実施例12の変形)
16.実施例14(実施例7〜実施例12の変形)
17.実施例15(実施例7〜実施例12の変形)
18.実施例16(実施例1〜実施例12の変形)
19.実施例17(波長変換素子として機能する固体撮像素子)
20.実施例18(実施例17の変形)
21.実施例19(実施例7の固体撮像素子の製造方法)
22.本開示の電子機器(撮像装置の例)
本開示の半導体装置及びその製造方法、並びに、固体撮像素子及び電子機器にあっては、半導体基板について、シリコン基板を用いる構成とすることができる。更に、シリコン材料に限らず、化合物材料や有機半導体材料などの様々な半導体材料を半導体基板の構成材料として用いることができる。また、半導体基板内に、光電変換素子を形成する/形成しない、いずれの構成とすることができる。
実施例1 :本開示の一態様に係る固体撮像素子
増幅トランジスタのソース領域、ドレイン領域の構成
実施例2 :実施例1の変形/増幅トランジスタのソース領域、ドレイン領域の構成
実施例3 :実施例1の変形/貫通電極の形状
実施例4 :実施例1の変形/他の半導体基板の配置
実施例5 :実施例1〜実施例4の変形/貫通電極の容量の低減
実施例6 :実施例1の固体撮像素子の製造方法
参考例 :貫通電極とトランジスタとを混載した場合の基本構成
実施例7 :増幅トランジスタのチャネル構造
実施例8 :電子変換型の縦方向2色分光の裏面照射型固体撮像素子
実施例9 :実施例8の変形/貫通電極の配線裏面側構造
実施例10:実施例9の変形/貫通電極の配線裏面側構造
実施例11:実施例8の変形/貫通電極の配線不要構造
実施例12:高性能なトランジスタ動作及び分離特性を有する固体撮像素子
実施例13:実施例12の変形/貫通電極の形状
実施例14:実施例7〜実施例12の変形/ソース領域及びドレイン領域の配置
実施例15:実施例7〜実施例12の変形/ソース領域及びドレイン領域の配置
実施例16:実施例1〜実施例12の変形/側面チャネルと表面チャネル型トランジスタ との組み合わせ
実施例17:波長変換素子として機能する固体撮像素子
実施例18:実施例17の変形/貫通電極を挟んでリセットトランジスタを形成する例
実施例19:実施例7の固体撮像素子の製造方法
ここで、本開示の技術を用いずに、貫通電極14と、画素10を構成するトランジスタとを混載した場合の基本構成について参考例として説明する。参考例の固体撮像素子の平面図を図9Aに示し、その側断面図を図9Bに示す。図9Bは、図9AのC−C線に沿った側断面図である。
1.増幅トランジスタ22において、変動する電位の駆動範囲内で安定・良好な増幅動作を行うことができる。この作用、効果は、駆動範囲での動作を行う仕事関数を持つ、増幅トランジスタ22のゲート電極(第1の導電体142A)、高誘電率薄膜から成る上部絶縁膜141A、及び、チャネル形状・濃度の制御、トランジスタ容量変動の抑制によって実現される。
上述した実施例1〜実施例5、実施例7〜実施例19の固体撮像素子は、デジタルスチルカメラやビデオカメラ等の撮像装置や、携帯電話機などの撮像機能を有する携帯端末装置や、画像読取部に固体撮像素子を用いる複写機などの電子機器全般において、その撮像部(画像取込部)として用いることができる。尚、電子機器に搭載される上記モジュール状の形態、即ち、カメラモジュールを撮像装置とする場合もある。
図26は、本開示の電子機器の一例である撮像装置の構成を示すブロック図である。図26に示すように、本例に係る撮像装置100は、レンズ群等を含む光学系101、撮像部102、カメラ信号処理部であるDSP回路103、フレームメモリ104、表示装置105、記録装置106、操作系107、及び、電源系108等を有している。そして、DSP回路103、フレームメモリ104、表示装置105、記録装置106、操作系107、及び、電源系108がバスライン109を介して相互に接続された構成となっている。
[1]半導体基板の第1面側に配置された半導体素子、
半導体基板を半導体基板の厚さ方向に貫通して設けられ、半導体素子で得られた電荷を半導体基板の第2面側に導く貫通電極、及び、
貫通電極によって導かれた電荷に基づく電気信号を出力する増幅トランジスタを備えており、
増幅トランジスタは、貫通電極をゲート電極とし、貫通電極の周りにソース領域及びドレイン領域を有する、
半導体装置。
[2]貫通電極は、半導体基板を貫通して設けられた導電体、及び、導電体と半導体基板との間を電気的に分離する分離層から成る、
上記[1]に記載の半導体装置。
[3]分離層は、導電体の側壁を被覆する絶縁膜によって構成されている、
上記[2]に記載の半導体装置。
[4]絶縁膜の膜厚は、半導体基板の深さ方向の位置に応じて異なる、
上記[2]又は[3]に記載の半導体装置。
[5]増幅トランジスタのソース領域及びドレイン領域は、絶縁膜の近傍に存在し、半導体基板の深さ方向の一部又は全領域に亘って形成された拡散層から成る、
上記[1]〜[4]のいずれかに記載の半導体装置。
[6]半導体基板の平面上に形成された平面トランジスタを備えており、
平面トランジスタのゲート酸化膜の膜厚と、増幅トランジスタのゲート酸化膜の膜厚とが異なる、
上記[1]に記載の半導体装置。
[7]半導体基板の平面上に形成された平面トランジスタを備えており、
平面トランジスタのゲート酸化膜の構成材料と、増幅トランジスタのゲート酸化膜の構成材料とが異なる、
上記[1]に記載の半導体装置。
[8]貫通電極の頂部に設けられた、導電体から成るキャップ電極を備えており、
キャップ電極は、増幅トランジスタのソース領域、ドレイン領域、もしくはチャネル領域の近傍まで延伸して設けられている、
上記[1]に記載の半導体装置。
[9]導電体は、長さ方向において少なくとも1層から成り、少なくとも1種類の導電体性材料から構成されている、
上記[2]に記載の半導体装置。
[10]導電体は、増幅トランジスタのゲート電極として機能する第1の導電体、及び、第1の導電体に連続する第2の導電体から成る、
上記[9]に記載の半導体装置。
[11]第1の導電体は、増幅トランジスタの動作範囲を所望に設定する仕事関数を有する、
上記[10]に記載の半導体装置。
[12]第1の導電体と半導体基板とを分離する絶縁膜は、第2の導電体と半導体基板とを分離する絶縁膜よりも薄膜でかつ高誘電率材料から成る、
上記[11]に記載の半導体装置。
[13]第2の導電体は、第1の導電体よりも小径でかつ導電性材料から成る、
上記[10]〜[12]のいずれかに記載の半導体装置。
[14]第1の導電体の周りの絶縁膜の膜厚と、第2の導電体の周りの絶縁膜とが異なる、
上記[10]〜[12]のいずれかに記載の半導体装置。
[15]第2の導電体の周りの絶縁膜は、低誘電率絶縁膜から成る、
上記[14]に記載の半導体装置。
[16]第2の導電体の周りの絶縁膜は、第2の導電体との間に介在する空孔と共に、第2の導電体と半導体基板とを電気的に分離する分離構造を構成している、
上記[15]に記載の半導体装置。
[17]第1の導電体の周りの絶縁膜に付与されている固定電荷量と、第2の導電体の周りの絶縁膜に付与されている固定電荷量とを異なる、
上記[16]に記載の半導体装置。
[18]半導体基板の第1面側に配置された半導体素子、
半導体基板を半導体基板の厚さ方向に貫通して設けられ、半導体素子で得られた電荷を半導体基板の第2面側に導く貫通電極、及び、
貫通電極によって導かれた電荷に基づく電気信号を出力する増幅トランジスタを備える半導体装置の製造に当たって、
貫通電極を増幅トランジスタのゲート電極とし、貫通電極の周りに増幅トランジスタのソース領域及びドレイン領域を形成する、
半導体装置の製造方法。
[19]半導体基板の第1面側に配置された光電変換素子、
半導体基板を半導体基板の厚さ方向に貫通して設けられ、光電変換素子での光電変換によって得られた電荷を半導体基板の第2面側に導く貫通電極、及び、
貫通電極によって導かれた電荷に基づく電気信号を出力する増幅トランジスタを備えており、
増幅トランジスタは、貫通電極をゲート電極とし、貫通電極の周りにソース領域及びドレイン領域を有する、
固体撮像素子。
[20]半導体基板の第1面側に配置された光電変換素子、
半導体基板を半導体基板の厚さ方向に貫通して設けられ、光電変換素子での光電変換によって得られた電荷を半導体基板の第2面側に導く貫通電極、及び、
貫通電極によって導かれた電荷に基づく電気信号を出力する増幅トランジスタを備えており、
増幅トランジスタは、貫通電極をゲート電極とし、貫通電極の周りにソース領域及びドレイン領域を有する、
固体撮像素子を備える電子機器。
Claims (19)
- 半導体基板の第1面側に配置された半導体素子、
前記半導体基板を前記半導体基板の厚さ方向に貫通して設けられ、前記半導体素子で得られた電荷を前記半導体基板の第2面側に導く貫通電極、及び、
前記貫通電極によって導かれた電荷に基づく電気信号を出力する増幅トランジスタを備えており、
前記増幅トランジスタは、前記貫通電極をゲート電極とし、前記貫通電極の周りに、前記半導体基板の深さ方向の一部又は全領域に亘って形成された拡散層から成るソース領域及びドレイン領域を有する、
半導体装置。 - 前記貫通電極は、前記半導体基板を貫通して設けられた導電体、及び、前記導電体と前記半導体基板との間を電気的に分離する分離層から成る、
請求項1に記載の半導体装置。 - 前記分離層は、前記導電体の側壁を被覆する絶縁膜によって構成されている、
請求項2に記載の半導体装置。 - 前記絶縁膜の膜厚は、前記半導体基板の深さ方向の位置に応じて異なる、
請求項3に記載の半導体装置。 - 前記半導体基板の前記第2面側の平面上に形成された平面トランジスタを備えており、
平面トランジスタのゲート酸化膜の膜厚と、前記増幅トランジスタのゲート酸化膜の膜厚とが異なる、
請求項1に記載の半導体装置。 - 前記半導体基板の前記第2面側の平面上に形成された平面トランジスタを備えており、
前記平面トランジスタのゲート酸化膜の構成材料と、前記増幅トランジスタのゲート酸化膜の構成材料とが異なる、
請求項1に記載の半導体装置。 - 前記貫通電極の頂部に設けられた、導電体から成るキャップ電極を備えており、
前記キャップ電極は、平面視で、前記増幅トランジスタのソース領域及びドレイン領域の部位まで延伸して設けられている、
請求項1に記載の半導体装置。 - 前記導電体は、長さ方向において少なくとも1層から成り、少なくとも1種類の導電体性材料から構成されている、
請求項2に記載の半導体装置。 - 前記導電体は、前記増幅トランジスタのゲート電極として機能する第1の導電体、及び、前記第1の導電体に連続する第2の導電体から成る、
請求項8に記載の半導体装置。 - 前記第1の導電体は、前記増幅トランジスタの動作範囲を所望に設定する仕事関数を有する、
請求項9に記載の半導体装置。 - 前記第1の導電体と前記半導体基板とを分離する絶縁膜は、前記第2の導電体と前記半導体基板とを分離する絶縁膜よりも薄膜でかつ高誘電率材料から成る、
請求項10に記載の半導体装置。 - 前記第2の導電体は、前記第1の導電体よりも小径でかつ導電性材料から成る、
請求項9乃至請求項11のいずれか1項に記載の半導体装置。 - 前記第1の導電体の周りの絶縁膜の膜厚と、前記第2の導電体の周りの絶縁膜の膜厚とが異なる、
請求項9乃至請求項11のいずれか1項に記載の半導体装置。 - 前記第2の導電体の周りの絶縁膜は、低誘電率絶縁膜から成る、
請求項13に記載の半導体装置。 - 前記第2の導電体の周りの絶縁膜は、前記第2の導電体との間に介在する空孔と共に、前記第2の導電体と前記半導体基板とを電気的に分離する分離構造を構成している、
請求項14に記載の半導体装置。 - 前記第1の導電体の周りの絶縁膜に付与されている固定電荷量と、前記第2の導電体の周りの絶縁膜に付与されている固定電荷量とが異なる、
請求項15に記載の半導体装置。 - 半導体基板の第1面側に配置された半導体素子、
前記半導体基板を前記半導体基板の厚さ方向に貫通して設けられ、前記半導体素子で得られた電荷を前記半導体基板の第2面側に導く貫通電極、及び、
前記貫通電極によって導かれた電荷に基づく電気信号を出力する増幅トランジスタを備える半導体装置の製造に当たって、
前記貫通電極を前記増幅トランジスタのゲート電極とし、前記貫通電極の周りに、前記半導体基板の深さ方向の一部又は全領域に亘って形成された拡散層から成る前記増幅トランジスタのソース領域及びドレイン領域を形成する、
半導体装置の製造方法。 - 半導体基板の第1面側に配置された光電変換素子、
前記半導体基板を前記半導体基板の厚さ方向に貫通して設けられ、前記光電変換素子での光電変換によって得られた電荷を前記半導体基板の第2面側に導く貫通電極、及び、
前記貫通電極によって導かれた電荷に基づく電気信号を出力する増幅トランジスタを備えており、
前記増幅トランジスタは、前記貫通電極をゲート電極とし、前記貫通電極の周りに、前記半導体基板の深さ方向の一部又は全領域に亘って形成された拡散層から成るソース領域及びドレイン領域を有する、
固体撮像素子。 - 半導体基板の第1面側に配置された光電変換素子、
前記半導体基板を前記半導体基板の厚さ方向に貫通して設けられ、前記光電変換素子での光電変換によって得られた電荷を前記半導体基板の第2面側に導く貫通電極、及び、
前記貫通電極によって導かれた電荷に基づく電気信号を出力する増幅トランジスタを備えており、
前記増幅トランジスタは、前記貫通電極をゲート電極とし、前記貫通電極の周りに、前記半導体基板の深さ方向の一部又は全領域に亘って形成された拡散層から成るソース領域及びドレイン領域を有する、
固体撮像素子を備える電子機器。
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