JPWO2022097427A1 - - Google Patents
Info
- Publication number
- JPWO2022097427A1 JPWO2022097427A1 JP2022560687A JP2022560687A JPWO2022097427A1 JP WO2022097427 A1 JPWO2022097427 A1 JP WO2022097427A1 JP 2022560687 A JP2022560687 A JP 2022560687A JP 2022560687 A JP2022560687 A JP 2022560687A JP WO2022097427 A1 JPWO2022097427 A1 JP WO2022097427A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
- H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/42—Vias, e.g. via plugs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/44—Conductive materials thereof
- H10W20/4451—Semiconductor materials, e.g. polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
- H10W20/48—Insulating materials thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020186610 | 2020-11-09 | ||
| JP2021131322 | 2021-08-11 | ||
| PCT/JP2021/037502 WO2022097427A1 (ja) | 2020-11-09 | 2021-10-11 | 撮像装置、撮像装置の製造方法及び電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022097427A1 true JPWO2022097427A1 (https=) | 2022-05-12 |
Family
ID=81457148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022560687A Pending JPWO2022097427A1 (https=) | 2020-11-09 | 2021-10-11 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20240006448A1 (https=) |
| EP (1) | EP4243055B1 (https=) |
| JP (1) | JPWO2022097427A1 (https=) |
| KR (1) | KR20230104598A (https=) |
| CN (1) | CN116210076A (https=) |
| TW (1) | TW202236425A (https=) |
| WO (1) | WO2022097427A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024138782A (ja) * | 2023-03-27 | 2024-10-09 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| US20250072148A1 (en) * | 2023-08-23 | 2025-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deep trench isolation structure for image sensor |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04208529A (ja) * | 1990-01-12 | 1992-07-30 | Nec Corp | 半導体装置の製造方法 |
| JP2003526937A (ja) * | 2000-03-10 | 2003-09-09 | チップパック，インク． | フリップチップ接合構造 |
| JP2012506144A (ja) * | 2008-10-15 | 2012-03-08 | オー・アー・セー・マイクロテック・アクチボラゲット | ビア配線を作るための方法 |
| JP2016033972A (ja) * | 2014-07-31 | 2016-03-10 | キヤノン株式会社 | 撮像装置及び撮像システム |
| JP2018117102A (ja) * | 2017-01-20 | 2018-07-26 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置 |
| US20180308895A1 (en) * | 2017-04-24 | 2018-10-25 | SK Hynix Inc. | Stack-type image sensor |
| JP2020004936A (ja) * | 2018-07-02 | 2020-01-09 | 株式会社デンソー | 半導体装置およびその製造方法 |
| WO2020075583A1 (ja) * | 2018-10-12 | 2020-04-16 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、固体撮像素子 |
| JP2020123731A (ja) * | 2014-10-08 | 2020-08-13 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および製造方法、並びに、電子機器 |
| WO2020203141A1 (ja) * | 2019-03-29 | 2020-10-08 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2639355B2 (ja) * | 1994-09-01 | 1997-08-13 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US10361244B2 (en) * | 2014-07-15 | 2019-07-23 | Brillinics Inc. | Solid-state imaging device, method for producing solid-state imaging device, and electronic apparatus |
| JP2018129412A (ja) * | 2017-02-09 | 2018-08-16 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、および半導体装置の製造方法 |
| WO2018186197A1 (ja) * | 2017-04-04 | 2018-10-11 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、及び電子機器 |
| WO2019130702A1 (ja) * | 2017-12-27 | 2019-07-04 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| WO2019150981A1 (ja) * | 2018-02-01 | 2019-08-08 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| TWI890521B (zh) * | 2018-11-21 | 2025-07-11 | 日商索尼半導體解決方案公司 | 固體攝像元件 |
-
2021
- 2021-10-11 JP JP2022560687A patent/JPWO2022097427A1/ja active Pending
- 2021-10-11 EP EP21888980.6A patent/EP4243055B1/en active Active
- 2021-10-11 US US18/251,333 patent/US20240006448A1/en active Pending
- 2021-10-11 KR KR1020237012591A patent/KR20230104598A/ko not_active Ceased
- 2021-10-11 CN CN202180070653.5A patent/CN116210076A/zh active Pending
- 2021-10-11 WO PCT/JP2021/037502 patent/WO2022097427A1/ja not_active Ceased
- 2021-11-02 TW TW110140825A patent/TW202236425A/zh unknown
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04208529A (ja) * | 1990-01-12 | 1992-07-30 | Nec Corp | 半導体装置の製造方法 |
| JP2003526937A (ja) * | 2000-03-10 | 2003-09-09 | チップパック，インク． | フリップチップ接合構造 |
| JP2012506144A (ja) * | 2008-10-15 | 2012-03-08 | オー・アー・セー・マイクロテック・アクチボラゲット | ビア配線を作るための方法 |
| JP2016033972A (ja) * | 2014-07-31 | 2016-03-10 | キヤノン株式会社 | 撮像装置及び撮像システム |
| JP2020123731A (ja) * | 2014-10-08 | 2020-08-13 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および製造方法、並びに、電子機器 |
| JP2018117102A (ja) * | 2017-01-20 | 2018-07-26 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置 |
| US20180308895A1 (en) * | 2017-04-24 | 2018-10-25 | SK Hynix Inc. | Stack-type image sensor |
| JP2020004936A (ja) * | 2018-07-02 | 2020-01-09 | 株式会社デンソー | 半導体装置およびその製造方法 |
| WO2020075583A1 (ja) * | 2018-10-12 | 2020-04-16 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、固体撮像素子 |
| WO2020203141A1 (ja) * | 2019-03-29 | 2020-10-08 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4243055A1 (en) | 2023-09-13 |
| US20240006448A1 (en) | 2024-01-04 |
| TW202236425A (zh) | 2022-09-16 |
| EP4243055B1 (en) | 2026-01-28 |
| EP4243055A4 (en) | 2024-01-10 |
| CN116210076A (zh) | 2023-06-02 |
| KR20230104598A (ko) | 2023-07-10 |
| WO2022097427A1 (ja) | 2022-05-12 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240819 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20251104 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20251203 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20260210 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20260316 |