JP2020123731A - 半導体装置および製造方法、並びに、電子機器 - Google Patents
半導体装置および製造方法、並びに、電子機器 Download PDFInfo
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Abstract
Description
(1)
少なくとも2層以上で積層される複数の基板のうちの一方の基板に形成される第1の金属層と、
前記一方の基板に対して積層される他方の基板に形成される第2の金属層と
を備え、
前記第1の金属層と前記第2の金属層とを接合して電位固定することによって、前記一方の基板と前記他方の基板との間で電磁波を遮断する電磁波シールド構造を構成する
積層型デバイス。
(2)
前記第1の金属層は、前記一方の基板を前記他方の基板に接合する接合面に露出するように形成され、
前記第2の金属層は、前記他方の基板を前記一方の基板に接合する接合面に露出するように形成される
上記(1)に記載の積層型デバイス。
(3)
前記第1の金属層および前記第2の金属層は、所定間隔で独立して配置された複数のパッドにより、それぞれ構成される
上記(1)または(2)に記載の積層型デバイス。
(4)
前記第1の金属層および前記第2の金属層それぞれを構成する複数の前記パッドの少なくとも一部は、前記第1の金属層および前記第2の金属層それぞれと同一層に形成される連結配線によって電気的に接続される
上記(3)に記載の積層型デバイス。
(5)
前記第1の金属層を構成する複数の前記パッドと、前記第2の金属層を構成する複数の前記パッドとは、互いに全面または一部で接合される
上記(3)または(4)のいずれかに記載の積層型デバイス。
(6)
前記第1の金属層および前記第2の金属層それぞれを構成する複数の前記パッドの少なくとも一部は、前記第1の金属層および前記第2の金属層とは異なる別層の配線を介して電気的に接続される
上記(3)に記載の積層型デバイス。
(7)
前記第1の金属層および前記第2の金属層は、前記一方の基板と前記他方の基板との間で電気的な接続を行う接合部以外の全面に形成され、
前記第1の金属層と前記接合部との間、および、前記第2の金属層と前記接合部との間にスリットが形成される
上記(1)または(2)に記載の積層型デバイス。
(8)
前記電磁波シールド構造は、前記一方の基板および前記他方の基板の接合面の全面に配置される
上記(1)から(7)までのいずれかに記載の積層型デバイス。
(9)
前記電磁波シールド構造は、前記一方の基板および前記他方の基板の接合面における、前記一方の基板から前記他方の基板の動作に悪影響を与える電磁波を発生する領域、または、前記他方の基板において発生する電磁波により前記一方の基板において悪影響を受ける領域のうち、少なくともいずれか一方の領域に配置される
上記(1)から(7)までのいずれかに記載の積層型デバイス。
(10)
少なくとも2層以上で積層される複数の基板のうちの一方の基板に第1の金属層を形成し、
前記一方の基板に対して積層される他方の基板に第2の金属層を形成し、
前記第1の金属層と前記第2の金属層とを接合して電位固定することによって、前記一方の基板と前記他方の基板との間で電磁波を遮断する電磁波シールド構造を構成する
ステップを含む積層型デバイスの製造方法。
(11)
少なくとも2層以上で積層される複数の基板のうちの一方の基板に形成される第1の金属層と、
前記一方の基板に対して積層される他方の基板に形成される第2の金属層と
を有し、
前記第1の金属層と前記第2の金属層とを接合して電位固定することによって、前記一方の基板と前記他方の基板との間で電磁波を遮断する電磁波シールド構造を構成する
積層型デバイスを備える電子機器。
Claims (11)
- 少なくとも2層以上で積層される複数の基板のうちの一方の基板に形成される第1の金属層と、
前記一方の基板に対して積層される他方の基板に形成される第2の金属層と
を備え、
前記第1の金属層と前記第2の金属層とを接合して電位固定することによって、前記一方の基板と前記他方の基板との間で電磁波を遮断する電磁波シールド構造を構成する
積層型デバイス。 - 前記第1の金属層は、前記一方の基板を前記他方の基板に接合する接合面に露出するように形成され、
前記第2の金属層は、前記他方の基板を前記一方の基板に接合する接合面に露出するように形成される
請求項1に記載の積層型デバイス。 - 前記第1の金属層および前記第2の金属層は、所定間隔で独立して配置された複数のパッドにより、それぞれ構成される
請求項2に記載の積層型デバイス。 - 前記第1の金属層および前記第2の金属層それぞれを構成する複数の前記パッドの少なくとも一部は、前記第1の金属層および前記第2の金属層それぞれと同一層に形成される連結配線によって電気的に接続される
請求項3に記載の積層型デバイス。 - 前記第1の金属層を構成する複数の前記パッドと、前記第2の金属層を構成する複数の前記パッドとは、互いに全面または一部で接合される
請求項3に記載の積層型デバイス。 - 前記第1の金属層および前記第2の金属層それぞれを構成する複数の前記パッドの少なくとも一部は、前記第1の金属層および前記第2の金属層とは異なる別層の配線を介して電気的に接続される
請求項3に記載の積層型デバイス。 - 前記第1の金属層および前記第2の金属層は、前記一方の基板と前記他方の基板との間で電気的な接続を行う接合部以外の全面に形成され、
前記第1の金属層と前記接合部との間、および、前記第2の金属層と前記接合部との間にスリットが形成される
請求項2に記載の積層型デバイス。 - 前記電磁波シールド構造は、前記一方の基板および前記他方の基板の接合面の全面に配置される
請求項1に記載の積層型デバイス。 - 前記電磁波シールド構造は、前記一方の基板および前記他方の基板の接合面における、前記一方の基板から前記他方の基板の動作に悪影響を与える電磁波を発生する領域、または、前記他方の基板において発生する電磁波により前記一方の基板において悪影響を受ける領域のうち、少なくともいずれか一方の領域に配置される
請求項1に記載の積層型デバイス。 - 少なくとも2層以上で積層される複数の基板のうちの一方の基板に第1の金属層を形成し、
前記一方の基板に対して積層される他方の基板に第2の金属層を形成し、
前記第1の金属層と前記第2の金属層とを接合して電位固定することによって、前記一方の基板と前記他方の基板との間で電磁波を遮断する電磁波シールド構造を構成する
ステップを含む積層型デバイスの製造方法。 - 少なくとも2層以上で積層される複数の基板のうちの一方の基板に形成される第1の金属層と、
前記一方の基板に対して積層される他方の基板に形成される第2の金属層と
を有し、
前記第1の金属層と前記第2の金属層とを接合して電位固定することによって、前記一方の基板と前記他方の基板との間で電磁波を遮断する電磁波シールド構造を構成する
積層型デバイスを備える電子機器。
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