KR20230062883A - 패턴 산출 장치, 패턴 산출 방법, 마스크, 노광 장치, 디바이스 제조 방법, 컴퓨터 프로그램, 및, 기록 매체 - Google Patents

패턴 산출 장치, 패턴 산출 방법, 마스크, 노광 장치, 디바이스 제조 방법, 컴퓨터 프로그램, 및, 기록 매체 Download PDF

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Publication number
KR20230062883A
KR20230062883A KR1020237013989A KR20237013989A KR20230062883A KR 20230062883 A KR20230062883 A KR 20230062883A KR 1020237013989 A KR1020237013989 A KR 1020237013989A KR 20237013989 A KR20237013989 A KR 20237013989A KR 20230062883 A KR20230062883 A KR 20230062883A
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KR
South Korea
Prior art keywords
mask pattern
exposure
mask
pattern
area
Prior art date
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KR1020237013989A
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English (en)
Korean (ko)
Inventor
마사키 가토
마나부 도구치
Original Assignee
가부시키가이샤 니콘
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Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20230062883A publication Critical patent/KR20230062883A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Optical Record Carriers (AREA)
KR1020237013989A 2017-03-31 2018-03-30 패턴 산출 장치, 패턴 산출 방법, 마스크, 노광 장치, 디바이스 제조 방법, 컴퓨터 프로그램, 및, 기록 매체 KR20230062883A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2017-073024 2017-03-31
JP2017073024 2017-03-31
KR1020217042410A KR20220000929A (ko) 2017-03-31 2018-03-30 패턴 산출 장치, 패턴 산출 방법, 마스크, 노광 장치, 디바이스 제조 방법, 컴퓨터 프로그램, 및, 기록 매체
PCT/JP2018/013852 WO2018181985A1 (ja) 2017-03-31 2018-03-30 パターン算出装置、パターン算出方法、マスク、露光装置、デバイス製造方法、コンピュータプログラム、及び、記録媒体

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020217042410A Division KR20220000929A (ko) 2017-03-31 2018-03-30 패턴 산출 장치, 패턴 산출 방법, 마스크, 노광 장치, 디바이스 제조 방법, 컴퓨터 프로그램, 및, 기록 매체

Publications (1)

Publication Number Publication Date
KR20230062883A true KR20230062883A (ko) 2023-05-09

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ID=63678035

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020237013989A KR20230062883A (ko) 2017-03-31 2018-03-30 패턴 산출 장치, 패턴 산출 방법, 마스크, 노광 장치, 디바이스 제조 방법, 컴퓨터 프로그램, 및, 기록 매체
KR1020197030978A KR102345078B1 (ko) 2017-03-31 2018-03-30 패턴 산출 장치, 패턴 산출 방법, 마스크, 노광 장치, 디바이스 제조 방법, 컴퓨터 프로그램, 및, 기록 매체
KR1020217042410A KR20220000929A (ko) 2017-03-31 2018-03-30 패턴 산출 장치, 패턴 산출 방법, 마스크, 노광 장치, 디바이스 제조 방법, 컴퓨터 프로그램, 및, 기록 매체

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020197030978A KR102345078B1 (ko) 2017-03-31 2018-03-30 패턴 산출 장치, 패턴 산출 방법, 마스크, 노광 장치, 디바이스 제조 방법, 컴퓨터 프로그램, 및, 기록 매체
KR1020217042410A KR20220000929A (ko) 2017-03-31 2018-03-30 패턴 산출 장치, 패턴 산출 방법, 마스크, 노광 장치, 디바이스 제조 방법, 컴퓨터 프로그램, 및, 기록 매체

Country Status (5)

Country Link
JP (2) JP6915680B2 (ja)
KR (3) KR20230062883A (ja)
CN (1) CN110476121A (ja)
TW (2) TWI808078B (ja)
WO (1) WO2018181985A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020109440A (ja) * 2019-01-04 2020-07-16 株式会社Ｊｏｌｅｄ フォトマスクの製造方法、表示パネルの製造方法、および、フォトマスク

Citations (1)

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US20100266961A1 (en) 2009-04-21 2010-10-21 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method

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US5437946A (en) * 1994-03-03 1995-08-01 Nikon Precision Inc. Multiple reticle stitching for scanning exposure system
JPH08297692A (ja) * 1994-09-16 1996-11-12 Mitsubishi Electric Corp 光近接補正装置及び方法並びにパタン形成方法
JP2001068398A (ja) * 1999-08-27 2001-03-16 Hitachi Ltd 半導体集積回路装置の製造方法およびマスクの製造方法
JP2003043667A (ja) * 2001-07-30 2003-02-13 Ricoh Opt Ind Co Ltd 濃度分布マスクの製造方法
JP2004233861A (ja) * 2003-01-31 2004-08-19 Nikon Corp マスク、露光方法及びデバイス製造方法
JP4886169B2 (ja) * 2003-02-21 2012-02-29 キヤノン株式会社 マスク及びその設計方法、露光方法、並びに、デバイス製造方法
JP2004303951A (ja) 2003-03-31 2004-10-28 Nikon Corp 露光装置及び露光方法
JP4514427B2 (ja) * 2003-10-03 2010-07-28 リコー光学株式会社 稠密構造物品の製造方法及びそこで用いる露光用マスク、並びにマイクロレンズアレイ
JP2006171113A (ja) * 2004-12-13 2006-06-29 Toshiba Corp マスクデータ作成装置、マスクデータ作成方法、露光マスク、半導体装置の製造方法及びマスクデータ作成プログラム
US20070031764A1 (en) * 2005-08-03 2007-02-08 Meng-Chi Liou Exposure process
JP4984810B2 (ja) * 2006-02-16 2012-07-25 株式会社ニコン 露光方法、露光装置及びフォトマスク
JP2007049208A (ja) 2006-11-21 2007-02-22 Nikon Corp 露光装置、露光方法及びデバイス製造方法
JP2008185908A (ja) * 2007-01-31 2008-08-14 Nikon Corp マスクの製造方法、露光方法、露光装置、および電子デバイスの製造方法
US20080299499A1 (en) * 2007-05-30 2008-12-04 Naomasa Shiraishi Exposure method, method of manufacturing plate for flat panel display, and exposure apparatus
JP5077656B2 (ja) * 2007-06-18 2012-11-21 株式会社ニコン パターンデータ処理方法及びシステム、並びに露光方法及び装置
JP2009170832A (ja) * 2008-01-21 2009-07-30 Seiko Epson Corp レイアウトパターンの演算方法、フォトマスク、半導体装置の製造方法、半導体装置、並びに電子機器
JP2012054302A (ja) * 2010-08-31 2012-03-15 V Technology Co Ltd 露光方法及び露光装置
JP2013195583A (ja) * 2012-03-16 2013-09-30 Nikon Corp マスク、露光方法、露光装置およびデバイス製造方法
JP5677356B2 (ja) * 2012-04-04 2015-02-25 キヤノン株式会社 マスクパターンの生成方法
JP6108693B2 (ja) * 2012-06-08 2017-04-05 キヤノン株式会社 パターン作成方法
JP6136354B2 (ja) * 2013-02-22 2017-05-31 大日本印刷株式会社 露光マスク製造方法、露光マスクを用いた露光方法、露光マスクを製造するために用いられる基準マスク、および露光マスク

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Also Published As

Publication number Publication date
KR102345078B1 (ko) 2021-12-29
JP2021167972A (ja) 2021-10-21
WO2018181985A1 (ja) 2018-10-04
TW201903515A (zh) 2019-01-16
KR20220000929A (ko) 2022-01-04
TWI808078B (zh) 2023-07-11
JP6915680B2 (ja) 2021-08-04
CN110476121A (zh) 2019-11-19
JP2023052499A (ja) 2023-04-11
KR20190124799A (ko) 2019-11-05
JP7215528B2 (ja) 2023-01-31
JPWO2018181985A1 (ja) 2019-12-26
TW202340854A (zh) 2023-10-16

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