KR20230052959A - 폴리머, 이 폴리머를 함유하는 레지스트 조성물, 이를 사용한 부재의 제조 방법, 패턴 형성 방법 및 반전 패턴의 형성 방법 - Google Patents

폴리머, 이 폴리머를 함유하는 레지스트 조성물, 이를 사용한 부재의 제조 방법, 패턴 형성 방법 및 반전 패턴의 형성 방법 Download PDF

Info

Publication number
KR20230052959A
KR20230052959A KR1020237009448A KR20237009448A KR20230052959A KR 20230052959 A KR20230052959 A KR 20230052959A KR 1020237009448 A KR1020237009448 A KR 1020237009448A KR 20237009448 A KR20237009448 A KR 20237009448A KR 20230052959 A KR20230052959 A KR 20230052959A
Authority
KR
South Korea
Prior art keywords
group
substituent
carbon atoms
unit
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237009448A
Other languages
English (en)
Korean (ko)
Inventor
사토시 에노모토
타카히로 코자와
코헤이 마치다
Original Assignee
도요 고세이 고교 가부시키가이샤
오사카 유니버시티
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도요 고세이 고교 가부시키가이샤, 오사카 유니버시티 filed Critical 도요 고세이 고교 가부시키가이샤
Publication of KR20230052959A publication Critical patent/KR20230052959A/ko
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/30—Sulfur
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/38—Esters containing sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020237009448A 2020-08-20 2021-08-19 폴리머, 이 폴리머를 함유하는 레지스트 조성물, 이를 사용한 부재의 제조 방법, 패턴 형성 방법 및 반전 패턴의 형성 방법 Pending KR20230052959A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-139195 2020-08-20
JP2020139195 2020-08-20
PCT/JP2021/030330 WO2022039212A1 (ja) 2020-08-20 2021-08-19 ポリマー、該ポリマーを含有するレジスト組成物、それを用いた部材の製造方法、パターン形成方法及び反転パターンの形成方法

Publications (1)

Publication Number Publication Date
KR20230052959A true KR20230052959A (ko) 2023-04-20

Family

ID=80323488

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237009448A Pending KR20230052959A (ko) 2020-08-20 2021-08-19 폴리머, 이 폴리머를 함유하는 레지스트 조성물, 이를 사용한 부재의 제조 방법, 패턴 형성 방법 및 반전 패턴의 형성 방법

Country Status (4)

Country Link
JP (1) JP7747640B2 (https=)
KR (1) KR20230052959A (https=)
TW (1) TWI898021B (https=)
WO (1) WO2022039212A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022196258A1 (ja) * 2021-03-15 2022-09-22 東洋合成工業株式会社 オニウム塩、光酸発生剤、組成物及びそれを用いたデバイスの製造方法
JP2022164586A (ja) * 2021-04-15 2022-10-27 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2022173111A (ja) * 2021-05-06 2022-11-17 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7813190B2 (ja) * 2021-06-18 2026-02-12 住友化学株式会社 酸発生剤、レジスト組成物及びレジストパターンの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0990637A (ja) 1995-07-14 1997-04-04 Fujitsu Ltd レジスト組成物及びレジストパターンの形成方法
JP2010276910A (ja) 2009-05-29 2010-12-09 Shin-Etsu Chemical Co Ltd ネガ型レジスト組成物及びこれを用いたパターン形成方法
JP2011053622A (ja) 2009-09-04 2011-03-17 Fujifilm Corp 感活性光線性または感放射線性組成物およびそれを用いたパターン形成方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5746836B2 (ja) * 2009-07-14 2015-07-08 住友化学株式会社 塩、酸発生剤、重合体及びフォトレジスト組成物
US20110159447A1 (en) * 2009-12-25 2011-06-30 Tokyo Ohka Kogyo Co., Ltd. Developing solution for photolithography, method for forming resist pattern, and method and apparatus for producing developing solution for photolithography
JP5613011B2 (ja) * 2009-12-25 2014-10-22 東京応化工業株式会社 フォトリソグラフィ用濃縮現像液
JP6307940B2 (ja) * 2014-03-05 2018-04-11 住友化学株式会社 樹脂組成物及びレジスト組成物
JP6541508B2 (ja) * 2014-08-25 2019-07-10 住友化学株式会社 塩、樹脂、レジスト組成物及びレジストパターンの製造方法
JP2016108508A (ja) * 2014-12-10 2016-06-20 信越化学工業株式会社 ポリマー、レジスト材料、及びパターン形成方法
JP2016141796A (ja) * 2015-02-05 2016-08-08 信越化学工業株式会社 ポリマー、レジスト材料及びパターン形成方法
JP6274144B2 (ja) * 2015-04-07 2018-02-07 信越化学工業株式会社 ネガ型レジスト組成物及びパターン形成方法
JP6998769B2 (ja) * 2015-10-01 2022-01-18 東洋合成工業株式会社 ポリマー、該ポリマーを含有するレジスト組成物及びそれを用いたデバイスの製造方法
JP2017207532A (ja) * 2016-05-16 2017-11-24 東洋合成工業株式会社 レジスト組成物及びそれを用いたデバイスの製造方法
JP6948879B2 (ja) * 2016-09-07 2021-10-13 住友化学株式会社 塩、酸発生剤、樹脂、レジスト組成物及びレジストパターンの製造方法
KR102906438B1 (ko) * 2019-02-22 2025-12-30 도요 고세이 고교 가부시키가이샤 폴리머, 해당 폴리머를 함유하는 레지스트 조성물, 그것을 이용한 부재의 제조 방법, 패턴 형성 방법 및 반전 패턴의 형성 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0990637A (ja) 1995-07-14 1997-04-04 Fujitsu Ltd レジスト組成物及びレジストパターンの形成方法
JP2010276910A (ja) 2009-05-29 2010-12-09 Shin-Etsu Chemical Co Ltd ネガ型レジスト組成物及びこれを用いたパターン形成方法
JP2011053622A (ja) 2009-09-04 2011-03-17 Fujifilm Corp 感活性光線性または感放射線性組成物およびそれを用いたパターン形成方法

Also Published As

Publication number Publication date
JP7747640B2 (ja) 2025-10-01
JPWO2022039212A1 (https=) 2022-02-24
TW202219088A (zh) 2022-05-16
TWI898021B (zh) 2025-09-21
WO2022039212A1 (ja) 2022-02-24

Similar Documents

Publication Publication Date Title
KR102906438B1 (ko) 폴리머, 해당 폴리머를 함유하는 레지스트 조성물, 그것을 이용한 부재의 제조 방법, 패턴 형성 방법 및 반전 패턴의 형성 방법
KR20230052959A (ko) 폴리머, 이 폴리머를 함유하는 레지스트 조성물, 이를 사용한 부재의 제조 방법, 패턴 형성 방법 및 반전 패턴의 형성 방법
JP6847121B2 (ja) 組成物及びそれを用いたデバイスの製造方法
JP5115560B2 (ja) チオピラン誘導体、重合体、及びレジスト組成物、並びに、前記レジスト組成物を用いた半導体装置の製造方法
JP6998769B2 (ja) ポリマー、該ポリマーを含有するレジスト組成物及びそれを用いたデバイスの製造方法
JP6820233B2 (ja) ポリマー、該ポリマーを含有するレジスト組成物及びそれを用いたデバイスの製造方法
JP2017207532A (ja) レジスト組成物及びそれを用いたデバイスの製造方法
TW202130778A (zh) 含碘的光酸產生劑及包括其的組合物
JP7555951B2 (ja) スルホニウム塩、酸発生剤、レジスト組成物、及びデバイスの製造方法
WO2022196258A1 (ja) オニウム塩、光酸発生剤、組成物及びそれを用いたデバイスの製造方法
JP7079647B2 (ja) 組成物及びそれを用いたデバイスの製造方法
JP7249198B2 (ja) オニウム塩、組成物及びそれを用いたデバイスの製造方法
JP2018172640A (ja) 酸開裂性モノマー及びこれを含むポリマー
TWI751249B (zh) 光酸產生劑及抗蝕劑組成物、以及使用該抗蝕劑組成物的裝置的製造方法
TW201827444A (zh) 含金屬的鎓鹽化合物、光分解性鹼和抗蝕劑組成物、以及使用該抗蝕劑組成物的裝置的製造方法
JP6887394B2 (ja) スルホニウム塩、光酸発生剤、それを含む組成物、及び、デバイスの製造方法
JP2023122060A (ja) ポリマー、該ポリマーを含有するレジスト組成物、それを用いたデバイスの製造方法。
JP2025128965A (ja) オニウム塩、レジスト組成物及びそれを用いたデバイスの製造方法
KR20250069650A (ko) 폴리머, 이 폴리머를 함유하는 레지스트 조성물, 그것을 사용한 부재의 제조 방법 및 패턴 형성 방법
JP2021179544A (ja) 組成物、それを用いて得られる硬化物、光学デバイス、及び、デバイスの製造方法
WO2025182419A1 (ja) 組成物

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13 Pre-grant limitation requested

Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000