KR20230043924A - 반도체 장치의 구동 방법 - Google Patents

반도체 장치의 구동 방법 Download PDF

Info

Publication number
KR20230043924A
KR20230043924A KR1020237006224A KR20237006224A KR20230043924A KR 20230043924 A KR20230043924 A KR 20230043924A KR 1020237006224 A KR1020237006224 A KR 1020237006224A KR 20237006224 A KR20237006224 A KR 20237006224A KR 20230043924 A KR20230043924 A KR 20230043924A
Authority
KR
South Korea
Prior art keywords
transistor
wiring
circuit
insulator
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237006224A
Other languages
English (en)
Korean (ko)
Inventor
순페이 야마자키
하지메 키무라
히토시 쿠니타케
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20230043924A publication Critical patent/KR20230043924A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
KR1020237006224A 2020-08-03 2021-07-20 반도체 장치의 구동 방법 Pending KR20230043924A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-131964 2020-08-03
JP2020131964 2020-08-03
PCT/IB2021/056525 WO2022029534A1 (ja) 2020-08-03 2021-07-20 半導体装置の駆動方法

Publications (1)

Publication Number Publication Date
KR20230043924A true KR20230043924A (ko) 2023-03-31

Family

ID=80117208

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237006224A Pending KR20230043924A (ko) 2020-08-03 2021-07-20 반도체 장치의 구동 방법

Country Status (6)

Country Link
US (2) US12266392B2 (https=)
JP (2) JP7702411B2 (https=)
KR (1) KR20230043924A (https=)
CN (1) CN115867968A (https=)
DE (1) DE112021004116T5 (https=)
WO (1) WO2022029534A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230039668A (ko) 2020-07-17 2023-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
CN116114019A (zh) * 2020-09-22 2023-05-12 株式会社半导体能源研究所 半导体装置及电子设备
WO2024243833A1 (zh) * 2023-05-30 2024-12-05 长江存储科技有限责任公司 半导体器件及其制备方法、存储器系统
KR20250053567A (ko) * 2023-10-13 2025-04-22 삼성전자주식회사 반도체 소자와, 이를 포함하는 메모리 소자 및 전자 장치
KR20250054578A (ko) * 2023-10-16 2025-04-23 삼성전자주식회사 강유전체 전계 효과 트랜지스터, 메모리 장치, 및 뉴럴 네트워크 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110176348A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5519234A (en) 1991-02-25 1996-05-21 Symetrix Corporation Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current
JP2692610B2 (ja) * 1994-09-28 1997-12-17 日本電気株式会社 半導体不揮発性メモリセル及びその動作方法
JP3188179B2 (ja) 1995-09-26 2001-07-16 シャープ株式会社 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法
JP2939973B2 (ja) * 1996-06-06 1999-08-25 日本電気株式会社 不揮発性半導体メモリ装置の駆動方法
JP4256670B2 (ja) 2002-12-10 2009-04-22 富士通株式会社 容量素子、半導体装置およびその製造方法
JP4652087B2 (ja) 2004-03-11 2011-03-16 株式会社半導体エネルギー研究所 半導体装置
US7928910B2 (en) 2005-03-31 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Wireless chip and electronic device having wireless chip
US9324405B2 (en) 2010-11-30 2016-04-26 Radiant Technologies, Inc. CMOS analog memories utilizing ferroelectric capacitors
US9269416B2 (en) 2010-11-30 2016-02-23 Radiant Technologies, Inc. Non-volatile counter utilizing a ferroelectric capacitor
US8760907B2 (en) 2010-11-30 2014-06-24 Radiant Technologies, Inc. Analog memories utilizing ferroelectric capacitors
JP6258672B2 (ja) 2013-11-21 2018-01-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN106105037B (zh) 2014-01-21 2019-03-29 拉迪安特技术公司 利用铁电电容器的非易失性计数器
CN106716539B (zh) 2014-09-26 2020-11-17 拉迪安特技术公司 利用铁电电容器的cmos模拟存储器
US11171115B2 (en) 2019-03-18 2021-11-09 Kepler Computing Inc. Artificial intelligence processor with three-dimensional stacked memory
US11296708B2 (en) 2019-12-27 2022-04-05 Kepler Computing, Inc. Low power ferroelectric based majority logic gate adder

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110176348A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
K. Kato et al., "Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium-Gallium-Zinc Oxide," Jpn. J. Appl. Phys., vol. 51, 021201(2012).
S. Amano et al., "Low Power LC Display Using In-Ga-Zn-Oxide TFTs Based on Variable Frame Frequency," SID Symp. Dig. Papers, vol.41, pp.626-629(2010).
S. Yamazaki et al., "Properties of crystalline In-Ga-Zn-oxide semiconductor and its transistor characteristics," Jpn. J. Appl. Phys., vol. 53, 04ED18(2014).
T. Ishizu et al., "Embedded Oxide Semiconductor Memories: A Key Enabler for Low-Power ULSI," ECS Tran., vol. 79, pp. 149-156(2017).

Also Published As

Publication number Publication date
CN115867968A (zh) 2023-03-28
JP2025139598A (ja) 2025-09-26
US20230298650A1 (en) 2023-09-21
US20250157519A1 (en) 2025-05-15
DE112021004116T5 (de) 2023-06-29
US12266392B2 (en) 2025-04-01
WO2022029534A1 (ja) 2022-02-10
JPWO2022029534A1 (https=) 2022-02-10
JP7702411B2 (ja) 2025-07-03

Similar Documents

Publication Publication Date Title
US12266392B2 (en) Driving method of semiconductor device
JP7514240B2 (ja) 記憶装置、半導体装置、及び電子機器
US12354636B2 (en) Semiconductor device and electronic device
US20210383881A1 (en) Semiconductor device and electronic device
KR20240052666A (ko) 반도체 장치
CN115769221A (zh) 半导体装置及电子设备
KR20220158241A (ko) 기억 장치 및 전자 기기
JP2026032141A (ja) 半導体装置
JP7711071B2 (ja) 半導体装置、及び電子機器
JP2025118931A (ja) 記憶装置
US20250131949A1 (en) Storage Device
JP7723677B2 (ja) 半導体装置、及び電子機器
US12573439B2 (en) Semiconductor device and operation method thereof with non-polarizing reading operation
WO2023148580A1 (ja) 半導体装置の動作方法
WO2022064304A1 (ja) 半導体装置の駆動方法
JP7730833B2 (ja) 半導体装置、および半導体装置の駆動方法
JP7854098B2 (ja) 半導体装置
WO2020099983A1 (ja) 半導体装置、及び電子機器
WO2023144653A1 (ja) 記憶装置
JP2026067874A (ja) 半導体装置

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20230222

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20240717

Comment text: Request for Examination of Application