JP7702411B2 - 半導体装置の駆動方法 - Google Patents

半導体装置の駆動方法 Download PDF

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Publication number
JP7702411B2
JP7702411B2 JP2022541319A JP2022541319A JP7702411B2 JP 7702411 B2 JP7702411 B2 JP 7702411B2 JP 2022541319 A JP2022541319 A JP 2022541319A JP 2022541319 A JP2022541319 A JP 2022541319A JP 7702411 B2 JP7702411 B2 JP 7702411B2
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Prior art keywords
transistor
wiring
circuit
insulator
potential
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JP2022541319A
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English (en)
Japanese (ja)
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JPWO2022029534A5 (https=
JPWO2022029534A1 (https=
Inventor
舜平 山崎
肇 木村
寛司 國武
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2025105432A priority Critical patent/JP2025139598A/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2022541319A 2020-08-03 2021-07-20 半導体装置の駆動方法 Active JP7702411B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025105432A JP2025139598A (ja) 2020-08-03 2025-06-23 半導体装置の駆動方法

Applications Claiming Priority (3)

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JP2020131964 2020-08-03
JP2020131964 2020-08-03
PCT/IB2021/056525 WO2022029534A1 (ja) 2020-08-03 2021-07-20 半導体装置の駆動方法

Related Child Applications (1)

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JP2025105432A Division JP2025139598A (ja) 2020-08-03 2025-06-23 半導体装置の駆動方法

Publications (3)

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JPWO2022029534A1 JPWO2022029534A1 (https=) 2022-02-10
JPWO2022029534A5 JPWO2022029534A5 (https=) 2024-07-26
JP7702411B2 true JP7702411B2 (ja) 2025-07-03

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JP2022541319A Active JP7702411B2 (ja) 2020-08-03 2021-07-20 半導体装置の駆動方法
JP2025105432A Pending JP2025139598A (ja) 2020-08-03 2025-06-23 半導体装置の駆動方法

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JP2025105432A Pending JP2025139598A (ja) 2020-08-03 2025-06-23 半導体装置の駆動方法

Country Status (6)

Country Link
US (2) US12266392B2 (https=)
JP (2) JP7702411B2 (https=)
KR (1) KR20230043924A (https=)
CN (1) CN115867968A (https=)
DE (1) DE112021004116T5 (https=)
WO (1) WO2022029534A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230039668A (ko) 2020-07-17 2023-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
CN116114019A (zh) * 2020-09-22 2023-05-12 株式会社半导体能源研究所 半导体装置及电子设备
WO2024243833A1 (zh) * 2023-05-30 2024-12-05 长江存储科技有限责任公司 半导体器件及其制备方法、存储器系统
KR20250053567A (ko) * 2023-10-13 2025-04-22 삼성전자주식회사 반도체 소자와, 이를 포함하는 메모리 소자 및 전자 장치
KR20250054578A (ko) * 2023-10-16 2025-04-23 삼성전자주식회사 강유전체 전계 효과 트랜지스터, 메모리 장치, 및 뉴럴 네트워크 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014503930A (ja) 2010-11-30 2014-02-13 レイディアント テクノロジーズ，インコーポレイテッド 強誘電体キャパシタを利用するアナログメモリ

Family Cites Families (15)

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US5519234A (en) 1991-02-25 1996-05-21 Symetrix Corporation Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current
JP2692610B2 (ja) * 1994-09-28 1997-12-17 日本電気株式会社 半導体不揮発性メモリセル及びその動作方法
JP3188179B2 (ja) 1995-09-26 2001-07-16 シャープ株式会社 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法
JP2939973B2 (ja) * 1996-06-06 1999-08-25 日本電気株式会社 不揮発性半導体メモリ装置の駆動方法
JP4256670B2 (ja) 2002-12-10 2009-04-22 富士通株式会社 容量素子、半導体装置およびその製造方法
JP4652087B2 (ja) 2004-03-11 2011-03-16 株式会社半導体エネルギー研究所 半導体装置
US7928910B2 (en) 2005-03-31 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Wireless chip and electronic device having wireless chip
CN102742003B (zh) 2010-01-15 2015-01-28 株式会社半导体能源研究所 半导体器件
US9324405B2 (en) 2010-11-30 2016-04-26 Radiant Technologies, Inc. CMOS analog memories utilizing ferroelectric capacitors
US9269416B2 (en) 2010-11-30 2016-02-23 Radiant Technologies, Inc. Non-volatile counter utilizing a ferroelectric capacitor
JP6258672B2 (ja) 2013-11-21 2018-01-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN106105037B (zh) 2014-01-21 2019-03-29 拉迪安特技术公司 利用铁电电容器的非易失性计数器
CN106716539B (zh) 2014-09-26 2020-11-17 拉迪安特技术公司 利用铁电电容器的cmos模拟存储器
US11171115B2 (en) 2019-03-18 2021-11-09 Kepler Computing Inc. Artificial intelligence processor with three-dimensional stacked memory
US11296708B2 (en) 2019-12-27 2022-04-05 Kepler Computing, Inc. Low power ferroelectric based majority logic gate adder

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014503930A (ja) 2010-11-30 2014-02-13 レイディアント テクノロジーズ，インコーポレイテッド 強誘電体キャパシタを利用するアナログメモリ

Also Published As

Publication number Publication date
CN115867968A (zh) 2023-03-28
JP2025139598A (ja) 2025-09-26
US20230298650A1 (en) 2023-09-21
US20250157519A1 (en) 2025-05-15
DE112021004116T5 (de) 2023-06-29
US12266392B2 (en) 2025-04-01
KR20230043924A (ko) 2023-03-31
WO2022029534A1 (ja) 2022-02-10
JPWO2022029534A1 (https=) 2022-02-10

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