CN115867968A - 半导体装置的驱动方法 - Google Patents

半导体装置的驱动方法 Download PDF

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Publication number
CN115867968A
CN115867968A CN202180047447.2A CN202180047447A CN115867968A CN 115867968 A CN115867968 A CN 115867968A CN 202180047447 A CN202180047447 A CN 202180047447A CN 115867968 A CN115867968 A CN 115867968A
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CN
China
Prior art keywords
transistor
wiring
insulator
circuit
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180047447.2A
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English (en)
Chinese (zh)
Inventor
山崎舜平
木村肇
国武宽司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN115867968A publication Critical patent/CN115867968A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
CN202180047447.2A 2020-08-03 2021-07-20 半导体装置的驱动方法 Pending CN115867968A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020131964 2020-08-03
JP2020-131964 2020-08-03
PCT/IB2021/056525 WO2022029534A1 (ja) 2020-08-03 2021-07-20 半導体装置の駆動方法

Publications (1)

Publication Number Publication Date
CN115867968A true CN115867968A (zh) 2023-03-28

Family

ID=80117208

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180047447.2A Pending CN115867968A (zh) 2020-08-03 2021-07-20 半导体装置的驱动方法

Country Status (6)

Country Link
US (2) US12266392B2 (https=)
JP (2) JP7702411B2 (https=)
KR (1) KR20230043924A (https=)
CN (1) CN115867968A (https=)
DE (1) DE112021004116T5 (https=)
WO (1) WO2022029534A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024243833A1 (zh) * 2023-05-30 2024-12-05 长江存储科技有限责任公司 半导体器件及其制备方法、存储器系统

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230039668A (ko) 2020-07-17 2023-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
CN116114019A (zh) * 2020-09-22 2023-05-12 株式会社半导体能源研究所 半导体装置及电子设备
KR20250053567A (ko) * 2023-10-13 2025-04-22 삼성전자주식회사 반도체 소자와, 이를 포함하는 메모리 소자 및 전자 장치
KR20250054578A (ko) * 2023-10-16 2025-04-23 삼성전자주식회사 강유전체 전계 효과 트랜지스터, 메모리 장치, 및 뉴럴 네트워크 장치

Family Cites Families (16)

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US5519234A (en) 1991-02-25 1996-05-21 Symetrix Corporation Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current
JP2692610B2 (ja) * 1994-09-28 1997-12-17 日本電気株式会社 半導体不揮発性メモリセル及びその動作方法
JP3188179B2 (ja) 1995-09-26 2001-07-16 シャープ株式会社 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法
JP2939973B2 (ja) * 1996-06-06 1999-08-25 日本電気株式会社 不揮発性半導体メモリ装置の駆動方法
JP4256670B2 (ja) 2002-12-10 2009-04-22 富士通株式会社 容量素子、半導体装置およびその製造方法
JP4652087B2 (ja) 2004-03-11 2011-03-16 株式会社半導体エネルギー研究所 半導体装置
US7928910B2 (en) 2005-03-31 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Wireless chip and electronic device having wireless chip
CN102742003B (zh) 2010-01-15 2015-01-28 株式会社半导体能源研究所 半导体器件
US9324405B2 (en) 2010-11-30 2016-04-26 Radiant Technologies, Inc. CMOS analog memories utilizing ferroelectric capacitors
US9269416B2 (en) 2010-11-30 2016-02-23 Radiant Technologies, Inc. Non-volatile counter utilizing a ferroelectric capacitor
US8760907B2 (en) 2010-11-30 2014-06-24 Radiant Technologies, Inc. Analog memories utilizing ferroelectric capacitors
JP6258672B2 (ja) 2013-11-21 2018-01-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN106105037B (zh) 2014-01-21 2019-03-29 拉迪安特技术公司 利用铁电电容器的非易失性计数器
CN106716539B (zh) 2014-09-26 2020-11-17 拉迪安特技术公司 利用铁电电容器的cmos模拟存储器
US11171115B2 (en) 2019-03-18 2021-11-09 Kepler Computing Inc. Artificial intelligence processor with three-dimensional stacked memory
US11296708B2 (en) 2019-12-27 2022-04-05 Kepler Computing, Inc. Low power ferroelectric based majority logic gate adder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024243833A1 (zh) * 2023-05-30 2024-12-05 长江存储科技有限责任公司 半导体器件及其制备方法、存储器系统

Also Published As

Publication number Publication date
JP2025139598A (ja) 2025-09-26
US20230298650A1 (en) 2023-09-21
US20250157519A1 (en) 2025-05-15
DE112021004116T5 (de) 2023-06-29
US12266392B2 (en) 2025-04-01
KR20230043924A (ko) 2023-03-31
WO2022029534A1 (ja) 2022-02-10
JPWO2022029534A1 (https=) 2022-02-10
JP7702411B2 (ja) 2025-07-03

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