JPWO2022029534A1 - - Google Patents
Info
- Publication number
- JPWO2022029534A1 JPWO2022029534A1 JP2022541319A JP2022541319A JPWO2022029534A1 JP WO2022029534 A1 JPWO2022029534 A1 JP WO2022029534A1 JP 2022541319 A JP2022541319 A JP 2022541319A JP 2022541319 A JP2022541319 A JP 2022541319A JP WO2022029534 A1 JPWO2022029534 A1 JP WO2022029534A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2275—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2259—Cell access
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025105432A JP2025139598A (ja) | 2020-08-03 | 2025-06-23 | 半導体装置の駆動方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020131964 | 2020-08-03 | ||
| JP2020131964 | 2020-08-03 | ||
| PCT/IB2021/056525 WO2022029534A1 (ja) | 2020-08-03 | 2021-07-20 | 半導体装置の駆動方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025105432A Division JP2025139598A (ja) | 2020-08-03 | 2025-06-23 | 半導体装置の駆動方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022029534A1 true JPWO2022029534A1 (https=) | 2022-02-10 |
| JPWO2022029534A5 JPWO2022029534A5 (https=) | 2024-07-26 |
| JP7702411B2 JP7702411B2 (ja) | 2025-07-03 |
Family
ID=80117208
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022541319A Active JP7702411B2 (ja) | 2020-08-03 | 2021-07-20 | 半導体装置の駆動方法 |
| JP2025105432A Pending JP2025139598A (ja) | 2020-08-03 | 2025-06-23 | 半導体装置の駆動方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025105432A Pending JP2025139598A (ja) | 2020-08-03 | 2025-06-23 | 半導体装置の駆動方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US12266392B2 (https=) |
| JP (2) | JP7702411B2 (https=) |
| KR (1) | KR20230043924A (https=) |
| CN (1) | CN115867968A (https=) |
| DE (1) | DE112021004116T5 (https=) |
| WO (1) | WO2022029534A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230039668A (ko) | 2020-07-17 | 2023-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| CN116114019A (zh) * | 2020-09-22 | 2023-05-12 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
| WO2024243833A1 (zh) * | 2023-05-30 | 2024-12-05 | 长江存储科技有限责任公司 | 半导体器件及其制备方法、存储器系统 |
| KR20250053567A (ko) * | 2023-10-13 | 2025-04-22 | 삼성전자주식회사 | 반도체 소자와, 이를 포함하는 메모리 소자 및 전자 장치 |
| KR20250054578A (ko) * | 2023-10-16 | 2025-04-23 | 삼성전자주식회사 | 강유전체 전계 효과 트랜지스터, 메모리 장치, 및 뉴럴 네트워크 장치 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0897386A (ja) * | 1994-09-28 | 1996-04-12 | Nec Corp | 半導体不揮発性メモリセル及びその動作方法 |
| JPH09326196A (ja) * | 1996-06-06 | 1997-12-16 | Nec Corp | 不揮発性半導体メモリ装置の駆動方法 |
| JP2014503930A (ja) * | 2010-11-30 | 2014-02-13 | レイディアント テクノロジーズ，インコーポレイテッド | 強誘電体キャパシタを利用するアナログメモリ |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5519234A (en) | 1991-02-25 | 1996-05-21 | Symetrix Corporation | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current |
| JP3188179B2 (ja) | 1995-09-26 | 2001-07-16 | シャープ株式会社 | 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法 |
| JP4256670B2 (ja) | 2002-12-10 | 2009-04-22 | 富士通株式会社 | 容量素子、半導体装置およびその製造方法 |
| JP4652087B2 (ja) | 2004-03-11 | 2011-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US7928910B2 (en) | 2005-03-31 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Wireless chip and electronic device having wireless chip |
| CN102742003B (zh) | 2010-01-15 | 2015-01-28 | 株式会社半导体能源研究所 | 半导体器件 |
| US9324405B2 (en) | 2010-11-30 | 2016-04-26 | Radiant Technologies, Inc. | CMOS analog memories utilizing ferroelectric capacitors |
| US9269416B2 (en) | 2010-11-30 | 2016-02-23 | Radiant Technologies, Inc. | Non-volatile counter utilizing a ferroelectric capacitor |
| JP6258672B2 (ja) | 2013-11-21 | 2018-01-10 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| CN106105037B (zh) | 2014-01-21 | 2019-03-29 | 拉迪安特技术公司 | 利用铁电电容器的非易失性计数器 |
| CN106716539B (zh) | 2014-09-26 | 2020-11-17 | 拉迪安特技术公司 | 利用铁电电容器的cmos模拟存储器 |
| US11171115B2 (en) | 2019-03-18 | 2021-11-09 | Kepler Computing Inc. | Artificial intelligence processor with three-dimensional stacked memory |
| US11296708B2 (en) | 2019-12-27 | 2022-04-05 | Kepler Computing, Inc. | Low power ferroelectric based majority logic gate adder |
-
2021
- 2021-07-20 CN CN202180047447.2A patent/CN115867968A/zh active Pending
- 2021-07-20 DE DE112021004116.9T patent/DE112021004116T5/de active Pending
- 2021-07-20 KR KR1020237006224A patent/KR20230043924A/ko active Pending
- 2021-07-20 JP JP2022541319A patent/JP7702411B2/ja active Active
- 2021-07-20 US US18/006,323 patent/US12266392B2/en active Active
- 2021-07-20 WO PCT/IB2021/056525 patent/WO2022029534A1/ja not_active Ceased
-
2025
- 2025-01-14 US US19/019,968 patent/US20250157519A1/en active Pending
- 2025-06-23 JP JP2025105432A patent/JP2025139598A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0897386A (ja) * | 1994-09-28 | 1996-04-12 | Nec Corp | 半導体不揮発性メモリセル及びその動作方法 |
| JPH09326196A (ja) * | 1996-06-06 | 1997-12-16 | Nec Corp | 不揮発性半導体メモリ装置の駆動方法 |
| JP2014503930A (ja) * | 2010-11-30 | 2014-02-13 | レイディアント テクノロジーズ，インコーポレイテッド | 強誘電体キャパシタを利用するアナログメモリ |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115867968A (zh) | 2023-03-28 |
| JP2025139598A (ja) | 2025-09-26 |
| US20230298650A1 (en) | 2023-09-21 |
| US20250157519A1 (en) | 2025-05-15 |
| DE112021004116T5 (de) | 2023-06-29 |
| US12266392B2 (en) | 2025-04-01 |
| KR20230043924A (ko) | 2023-03-31 |
| WO2022029534A1 (ja) | 2022-02-10 |
| JP7702411B2 (ja) | 2025-07-03 |
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