JPWO2022029534A1 - - Google Patents
Info
- Publication number
- JPWO2022029534A1 JPWO2022029534A1 JP2022541319A JP2022541319A JPWO2022029534A1 JP WO2022029534 A1 JPWO2022029534 A1 JP WO2022029534A1 JP 2022541319 A JP2022541319 A JP 2022541319A JP 2022541319 A JP2022541319 A JP 2022541319A JP WO2022029534 A1 JPWO2022029534 A1 JP WO2022029534A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2275—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2259—Cell access
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020131964 | 2020-08-03 | ||
| PCT/IB2021/056525 WO2022029534A1 (ja) | 2020-08-03 | 2021-07-20 | 半導体装置の駆動方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022029534A1 true JPWO2022029534A1 (ja) | 2022-02-10 |
Family
ID=80117208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022541319A Pending JPWO2022029534A1 (ja) | 2020-08-03 | 2021-07-20 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230298650A1 (ja) |
| JP (1) | JPWO2022029534A1 (ja) |
| KR (1) | KR20230043924A (ja) |
| CN (1) | CN115867968A (ja) |
| DE (1) | DE112021004116T5 (ja) |
| WO (1) | WO2022029534A1 (ja) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102742003B (zh) | 2010-01-15 | 2015-01-28 | 株式会社半导体能源研究所 | 半导体器件 |
| US8760907B2 (en) * | 2010-11-30 | 2014-06-24 | Radiant Technologies, Inc. | Analog memories utilizing ferroelectric capacitors |
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2021
- 2021-07-20 DE DE112021004116.9T patent/DE112021004116T5/de active Pending
- 2021-07-20 JP JP2022541319A patent/JPWO2022029534A1/ja active Pending
- 2021-07-20 WO PCT/IB2021/056525 patent/WO2022029534A1/ja active Application Filing
- 2021-07-20 US US18/006,323 patent/US20230298650A1/en active Pending
- 2021-07-20 CN CN202180047447.2A patent/CN115867968A/zh active Pending
- 2021-07-20 KR KR1020237006224A patent/KR20230043924A/ko unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE112021004116T5 (de) | 2023-06-29 |
| KR20230043924A (ko) | 2023-03-31 |
| US20230298650A1 (en) | 2023-09-21 |
| WO2022029534A1 (ja) | 2022-02-10 |
| CN115867968A (zh) | 2023-03-28 |