KR20220155264A - 고체 촬상 소자 및 전자 기기 - Google Patents

고체 촬상 소자 및 전자 기기 Download PDF

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Publication number
KR20220155264A
KR20220155264A KR1020227027763A KR20227027763A KR20220155264A KR 20220155264 A KR20220155264 A KR 20220155264A KR 1020227027763 A KR1020227027763 A KR 1020227027763A KR 20227027763 A KR20227027763 A KR 20227027763A KR 20220155264 A KR20220155264 A KR 20220155264A
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KR
South Korea
Prior art keywords
solid
state imaging
imaging device
conductor portion
buried conductor
Prior art date
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Abandoned
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KR1020227027763A
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English (en)
Korean (ko)
Inventor
신 이와부치
토모미 이토
아츠시 마사가키
요시하루 쿠도우
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20220155264A publication Critical patent/KR20220155264A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H01L27/14609—
    • H01L27/14625—
    • H01L27/1463—
    • H01L27/14636—
    • H01L27/14643—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

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  • Solid State Image Pick-Up Elements (AREA)
KR1020227027763A 2020-03-16 2021-03-15 고체 촬상 소자 및 전자 기기 Abandoned KR20220155264A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-045553 2020-03-16
JP2020045553 2020-03-16
PCT/JP2021/010393 WO2021187422A1 (ja) 2020-03-16 2021-03-15 固体撮像素子及び電子機器

Publications (1)

Publication Number Publication Date
KR20220155264A true KR20220155264A (ko) 2022-11-22

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Family Applications (1)

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KR1020227027763A Abandoned KR20220155264A (ko) 2020-03-16 2021-03-15 고체 촬상 소자 및 전자 기기

Country Status (6)

Country Link
US (1) US20230197753A1 (enExample)
EP (1) EP4123691A4 (enExample)
JP (1) JPWO2021187422A1 (enExample)
KR (1) KR20220155264A (enExample)
CN (1) CN115053348A (enExample)
WO (1) WO2021187422A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220063830A (ko) * 2020-11-10 2022-05-18 삼성전자주식회사 이미지 센서
KR102898048B1 (ko) * 2021-01-27 2025-12-09 삼성전자주식회사 반도체 장치 및 이를 포함하는 이미지 센서
JPWO2023203811A1 (enExample) * 2022-04-18 2023-10-26

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016039315A (ja) 2014-08-08 2016-03-22 株式会社東芝 固体撮像素子

Family Cites Families (13)

* Cited by examiner, † Cited by third party
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JP2008099841A (ja) * 2006-10-18 2008-05-01 Shizuoka Prefecture 振動型卵子採取装置及び卵子洗浄回収器
JP5651982B2 (ja) * 2010-03-31 2015-01-14 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
US20130334639A1 (en) * 2012-06-18 2013-12-19 Aeroflex Colorado Springs Inc. Photodiode with reduced dead-layer region
US9160949B2 (en) * 2013-04-01 2015-10-13 Omnivision Technologies, Inc. Enhanced photon detection device with biased deep trench isolation
JP6491509B2 (ja) * 2015-03-25 2019-03-27 キヤノン株式会社 固体撮像装置及びその製造方法
KR102546550B1 (ko) * 2016-06-24 2023-06-23 에스케이하이닉스 주식회사 딥 트렌치들 내의 전달 게이트들을 갖는 이미지 센서
KR20180079518A (ko) * 2016-12-30 2018-07-11 삼성전자주식회사 씨모스 이미지 센서
US10777597B2 (en) * 2017-03-22 2020-09-15 Sony Semiconductor Solutions Corporation Imaging device
WO2018207345A1 (ja) * 2017-05-12 2018-11-15 オリンパス株式会社 固体撮像装置
JP6884647B2 (ja) * 2017-06-19 2021-06-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
KR102553314B1 (ko) * 2018-08-29 2023-07-10 삼성전자주식회사 이미지 센서
JP7649754B2 (ja) * 2019-12-09 2025-03-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子機器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016039315A (ja) 2014-08-08 2016-03-22 株式会社東芝 固体撮像素子

Also Published As

Publication number Publication date
US20230197753A1 (en) 2023-06-22
WO2021187422A1 (ja) 2021-09-23
EP4123691A1 (en) 2023-01-25
EP4123691A4 (en) 2023-11-01
JPWO2021187422A1 (enExample) 2021-09-23
CN115053348A (zh) 2022-09-13

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Patent event date: 20220811

Patent event code: PA01051R01D

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Patent event date: 20250327

Patent event code: PE09021S01D

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