JPWO2021187422A1 - - Google Patents

Info

Publication number
JPWO2021187422A1
JPWO2021187422A1 JP2022508347A JP2022508347A JPWO2021187422A1 JP WO2021187422 A1 JPWO2021187422 A1 JP WO2021187422A1 JP 2022508347 A JP2022508347 A JP 2022508347A JP 2022508347 A JP2022508347 A JP 2022508347A JP WO2021187422 A1 JPWO2021187422 A1 JP WO2021187422A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022508347A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021187422A1 publication Critical patent/JPWO2021187422A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
JP2022508347A 2020-03-16 2021-03-15 Pending JPWO2021187422A1 (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020045553 2020-03-16
PCT/JP2021/010393 WO2021187422A1 (ja) 2020-03-16 2021-03-15 固体撮像素子及び電子機器

Publications (1)

Publication Number Publication Date
JPWO2021187422A1 true JPWO2021187422A1 (enExample) 2021-09-23

Family

ID=77770980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022508347A Pending JPWO2021187422A1 (enExample) 2020-03-16 2021-03-15

Country Status (6)

Country Link
US (1) US20230197753A1 (enExample)
EP (1) EP4123691A4 (enExample)
JP (1) JPWO2021187422A1 (enExample)
KR (1) KR20220155264A (enExample)
CN (1) CN115053348A (enExample)
WO (1) WO2021187422A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220063830A (ko) * 2020-11-10 2022-05-18 삼성전자주식회사 이미지 센서
US12288796B2 (en) * 2021-01-27 2025-04-29 Samsung Electronics Co., Ltd. Semiconductor device and image sensor including the same
KR20250005224A (ko) * 2022-04-18 2025-01-09 소니 세미컨덕터 솔루션즈 가부시키가이샤 광 검출 장치

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008099841A (ja) * 2006-10-18 2008-05-01 Shizuoka Prefecture 振動型卵子採取装置及び卵子洗浄回収器
JP2014225647A (ja) * 2013-04-01 2014-12-04 オムニヴィジョン テクノロジーズ インコーポレイテッド バイアス深溝分離部を有する高度光子検出装置
JP2016039315A (ja) * 2014-08-08 2016-03-22 株式会社東芝 固体撮像素子
JP2016184624A (ja) * 2015-03-25 2016-10-20 キヤノン株式会社 固体撮像装置及びその製造方法
US20170373108A1 (en) * 2016-06-24 2017-12-28 SK Hynix Inc. Image sensor including transfer gates in deep trenches
WO2018174090A1 (ja) * 2017-03-22 2018-09-27 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び信号処理装置
WO2018207345A1 (ja) * 2017-05-12 2018-11-15 オリンパス株式会社 固体撮像装置
JP2019004090A (ja) * 2017-06-19 2019-01-10 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5651982B2 (ja) * 2010-03-31 2015-01-14 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
US20130334639A1 (en) * 2012-06-18 2013-12-19 Aeroflex Colorado Springs Inc. Photodiode with reduced dead-layer region
KR20180079518A (ko) * 2016-12-30 2018-07-11 삼성전자주식회사 씨모스 이미지 센서
KR102553314B1 (ko) * 2018-08-29 2023-07-10 삼성전자주식회사 이미지 센서
CN114586161A (zh) * 2019-12-09 2022-06-03 索尼半导体解决方案公司 固态摄像元件和电子设备

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008099841A (ja) * 2006-10-18 2008-05-01 Shizuoka Prefecture 振動型卵子採取装置及び卵子洗浄回収器
JP2014225647A (ja) * 2013-04-01 2014-12-04 オムニヴィジョン テクノロジーズ インコーポレイテッド バイアス深溝分離部を有する高度光子検出装置
JP2016039315A (ja) * 2014-08-08 2016-03-22 株式会社東芝 固体撮像素子
JP2016184624A (ja) * 2015-03-25 2016-10-20 キヤノン株式会社 固体撮像装置及びその製造方法
US20170373108A1 (en) * 2016-06-24 2017-12-28 SK Hynix Inc. Image sensor including transfer gates in deep trenches
WO2018174090A1 (ja) * 2017-03-22 2018-09-27 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び信号処理装置
WO2018207345A1 (ja) * 2017-05-12 2018-11-15 オリンパス株式会社 固体撮像装置
JP2019004090A (ja) * 2017-06-19 2019-01-10 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器

Also Published As

Publication number Publication date
US20230197753A1 (en) 2023-06-22
KR20220155264A (ko) 2022-11-22
WO2021187422A1 (ja) 2021-09-23
EP4123691A1 (en) 2023-01-25
EP4123691A4 (en) 2023-11-01
CN115053348A (zh) 2022-09-13

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