KR20220147097A - 레지스트 조성물, 및 레지스트 조성물의 사용 방법 - Google Patents

레지스트 조성물, 및 레지스트 조성물의 사용 방법 Download PDF

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Publication number
KR20220147097A
KR20220147097A KR1020227031037A KR20227031037A KR20220147097A KR 20220147097 A KR20220147097 A KR 20220147097A KR 1020227031037 A KR1020227031037 A KR 1020227031037A KR 20227031037 A KR20227031037 A KR 20227031037A KR 20220147097 A KR20220147097 A KR 20220147097A
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KR
South Korea
Prior art keywords
group
mass
resist composition
resin
structural unit
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KR1020227031037A
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English (en)
Korean (ko)
Inventor
다쿠미 오카다
히데유키 사토
마사유키 가타기리
슈 스즈키
Original Assignee
미쯔비시 가스 케미칼 컴파니, 인코포레이티드
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Publication of KR20220147097A publication Critical patent/KR20220147097A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
    • C07C69/67—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids
    • C07C69/675—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids of saturated hydroxy-carboxylic acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
KR1020227031037A 2020-02-26 2021-02-17 레지스트 조성물, 및 레지스트 조성물의 사용 방법 Ceased KR20220147097A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-030379 2020-02-26
JP2020030379 2020-02-26
PCT/JP2021/005940 WO2021172132A1 (ja) 2020-02-26 2021-02-17 レジスト組成物、及びレジスト組成物の使用方法

Publications (1)

Publication Number Publication Date
KR20220147097A true KR20220147097A (ko) 2022-11-02

Family

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KR1020227031037A Ceased KR20220147097A (ko) 2020-02-26 2021-02-17 레지스트 조성물, 및 레지스트 조성물의 사용 방법

Country Status (6)

Country Link
US (1) US20230096312A1 (https=)
JP (1) JPWO2021172132A1 (https=)
KR (1) KR20220147097A (https=)
CN (1) CN115151863A (https=)
TW (1) TWI853149B (https=)
WO (1) WO2021172132A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023008354A1 (ja) * 2021-07-30 2023-02-02 三菱瓦斯化学株式会社 レジスト組成物、及びそれを用いたレジスト膜形成方法
WO2025105354A1 (ja) * 2023-11-13 2025-05-22 三菱瓦斯化学株式会社 半導体製造用組成物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003241385A (ja) 2001-12-03 2003-08-27 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法

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US4743529A (en) * 1986-11-21 1988-05-10 Eastman Kodak Company Negative working photoresists responsive to shorter visible wavelengths and novel coated articles
JP3619261B2 (ja) * 1993-06-15 2005-02-09 三菱レイヨン株式会社 溶剤組成物
JP2002031899A (ja) * 2000-07-14 2002-01-31 Mitsubishi Gas Chem Co Inc レジスト洗浄剤組成物
JP2007148208A (ja) * 2005-11-30 2007-06-14 Sumitomo Chemical Co Ltd 感放射線性樹脂組成物
US20080187868A1 (en) * 2007-02-07 2008-08-07 Munirathna Padmanaban Photoactive Compounds
US20110039206A1 (en) * 2009-05-20 2011-02-17 Rohm And Haas Electronic Materials Llc Novel resins and photoresist compositions comprising same
CN102574963B (zh) * 2009-09-15 2014-11-19 三菱瓦斯化学株式会社 芳香族烃树脂和光刻用下层膜形成组合物
IL213195A0 (en) * 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
EP2472320A2 (en) * 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Compositions comprising base-reactive component and processes for photolithography
CN104536265A (zh) * 2014-12-31 2015-04-22 浙江永太科技股份有限公司 一种光刻胶组合物
JP6477270B2 (ja) * 2015-06-09 2019-03-06 信越化学工業株式会社 パターン形成方法
EP3348542A4 (en) * 2015-09-10 2019-04-03 Mitsubishi Gas Chemical Company, Inc. COMPOUND, RESIN, RESIST COMPOSITION AND RADIATION SENSITIVE COMPOSITION, METHOD FOR FORMING A RESIST STRUCTURE, METHOD FOR PRODUCING AN AMORPHOUS FILMS, MATERIAL FOR FORMING A lithographic LAYER FILMS, COMPOSITION FOR PRODUCING A lithographic LAYER FILMS, METHOD FOR PRODUCING A CONTROL STRUCTURE AND CLEANING PROCESS
KR102051340B1 (ko) * 2015-09-30 2019-12-03 후지필름 가부시키가이샤 패턴 형성 방법, 전자 디바이스의 제조 방법, 및 적층체
TWI672562B (zh) * 2015-09-30 2019-09-21 南韓商羅門哈斯電子材料韓國公司 光致抗蝕劑組合物及方法
KR20170060902A (ko) * 2015-11-25 2017-06-02 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물 및 이를 이용한 유기 절연막
KR102373044B1 (ko) * 2017-02-20 2022-03-11 후지필름 가부시키가이샤 약액, 약액 수용체, 및 패턴 형성 방법
US10831100B2 (en) * 2017-11-20 2020-11-10 Rohm And Haas Electronic Materials, Llc Iodine-containing photoacid generators and compositions comprising the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003241385A (ja) 2001-12-03 2003-08-27 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法

Also Published As

Publication number Publication date
TWI853149B (zh) 2024-08-21
JPWO2021172132A1 (https=) 2021-09-02
US20230096312A1 (en) 2023-03-30
CN115151863A (zh) 2022-10-04
TW202138916A (zh) 2021-10-16
WO2021172132A1 (ja) 2021-09-02

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