TWI853149B - 阻劑組成物、以及阻劑組成物之使用方法 - Google Patents

阻劑組成物、以及阻劑組成物之使用方法 Download PDF

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Publication number
TWI853149B
TWI853149B TW110105905A TW110105905A TWI853149B TW I853149 B TWI853149 B TW I853149B TW 110105905 A TW110105905 A TW 110105905A TW 110105905 A TW110105905 A TW 110105905A TW I853149 B TWI853149 B TW I853149B
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TW
Taiwan
Prior art keywords
mass
resin
resist composition
group
solvent
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TW110105905A
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English (en)
Chinese (zh)
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TW202138916A (zh
Inventor
岡田拓巳
佐藤英之
片桐誠之
鈴木周
Original Assignee
日商三菱瓦斯化學股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
    • C07C69/67—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids
    • C07C69/675—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids of saturated hydroxy-carboxylic acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
TW110105905A 2020-02-26 2021-02-20 阻劑組成物、以及阻劑組成物之使用方法 TWI853149B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-030379 2020-02-26
JP2020030379 2020-02-26

Publications (2)

Publication Number Publication Date
TW202138916A TW202138916A (zh) 2021-10-16
TWI853149B true TWI853149B (zh) 2024-08-21

Family

ID=77490973

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110105905A TWI853149B (zh) 2020-02-26 2021-02-20 阻劑組成物、以及阻劑組成物之使用方法

Country Status (6)

Country Link
US (1) US20230096312A1 (https=)
JP (1) JPWO2021172132A1 (https=)
KR (1) KR20220147097A (https=)
CN (1) CN115151863A (https=)
TW (1) TWI853149B (https=)
WO (1) WO2021172132A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023008354A1 (ja) * 2021-07-30 2023-02-02 三菱瓦斯化学株式会社 レジスト組成物、及びそれを用いたレジスト膜形成方法
WO2025105354A1 (ja) * 2023-11-13 2025-05-22 三菱瓦斯化学株式会社 半導体製造用組成物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201706717A (zh) * 2015-06-09 2017-02-16 信越化學工業股份有限公司 圖案形成方法
TW201714020A (zh) * 2015-09-30 2017-04-16 羅門哈斯電子材料韓國公司 光致抗蝕劑組合物及方法
TW201842138A (zh) * 2017-02-20 2018-12-01 日商富士軟片股份有限公司 藥液、藥液收容體及圖案形成方法

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US4743529A (en) * 1986-11-21 1988-05-10 Eastman Kodak Company Negative working photoresists responsive to shorter visible wavelengths and novel coated articles
JP3619261B2 (ja) * 1993-06-15 2005-02-09 三菱レイヨン株式会社 溶剤組成物
JP2002031899A (ja) * 2000-07-14 2002-01-31 Mitsubishi Gas Chem Co Inc レジスト洗浄剤組成物
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP2007148208A (ja) * 2005-11-30 2007-06-14 Sumitomo Chemical Co Ltd 感放射線性樹脂組成物
US20080187868A1 (en) * 2007-02-07 2008-08-07 Munirathna Padmanaban Photoactive Compounds
US20110039206A1 (en) * 2009-05-20 2011-02-17 Rohm And Haas Electronic Materials Llc Novel resins and photoresist compositions comprising same
CN102574963B (zh) * 2009-09-15 2014-11-19 三菱瓦斯化学株式会社 芳香族烃树脂和光刻用下层膜形成组合物
IL213195A0 (en) * 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
EP2472320A2 (en) * 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Compositions comprising base-reactive component and processes for photolithography
CN104536265A (zh) * 2014-12-31 2015-04-22 浙江永太科技股份有限公司 一种光刻胶组合物
EP3348542A4 (en) * 2015-09-10 2019-04-03 Mitsubishi Gas Chemical Company, Inc. COMPOUND, RESIN, RESIST COMPOSITION AND RADIATION SENSITIVE COMPOSITION, METHOD FOR FORMING A RESIST STRUCTURE, METHOD FOR PRODUCING AN AMORPHOUS FILMS, MATERIAL FOR FORMING A lithographic LAYER FILMS, COMPOSITION FOR PRODUCING A lithographic LAYER FILMS, METHOD FOR PRODUCING A CONTROL STRUCTURE AND CLEANING PROCESS
KR102051340B1 (ko) * 2015-09-30 2019-12-03 후지필름 가부시키가이샤 패턴 형성 방법, 전자 디바이스의 제조 방법, 및 적층체
KR20170060902A (ko) * 2015-11-25 2017-06-02 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물 및 이를 이용한 유기 절연막
US10831100B2 (en) * 2017-11-20 2020-11-10 Rohm And Haas Electronic Materials, Llc Iodine-containing photoacid generators and compositions comprising the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201706717A (zh) * 2015-06-09 2017-02-16 信越化學工業股份有限公司 圖案形成方法
TW201714020A (zh) * 2015-09-30 2017-04-16 羅門哈斯電子材料韓國公司 光致抗蝕劑組合物及方法
TW201842138A (zh) * 2017-02-20 2018-12-01 日商富士軟片股份有限公司 藥液、藥液收容體及圖案形成方法

Also Published As

Publication number Publication date
KR20220147097A (ko) 2022-11-02
JPWO2021172132A1 (https=) 2021-09-02
US20230096312A1 (en) 2023-03-30
CN115151863A (zh) 2022-10-04
TW202138916A (zh) 2021-10-16
WO2021172132A1 (ja) 2021-09-02

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