CN115151863A - 抗蚀剂组合物和抗蚀剂组合物的使用方法 - Google Patents

抗蚀剂组合物和抗蚀剂组合物的使用方法 Download PDF

Info

Publication number
CN115151863A
CN115151863A CN202180016481.3A CN202180016481A CN115151863A CN 115151863 A CN115151863 A CN 115151863A CN 202180016481 A CN202180016481 A CN 202180016481A CN 115151863 A CN115151863 A CN 115151863A
Authority
CN
China
Prior art keywords
mass
resist composition
resin
group
structural unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180016481.3A
Other languages
English (en)
Chinese (zh)
Inventor
冈田拓巳
佐藤英之
片桐诚之
铃木周
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Publication of CN115151863A publication Critical patent/CN115151863A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
    • C07C69/67—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids
    • C07C69/675—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids of saturated hydroxy-carboxylic acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
CN202180016481.3A 2020-02-26 2021-02-17 抗蚀剂组合物和抗蚀剂组合物的使用方法 Pending CN115151863A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-030379 2020-02-26
JP2020030379 2020-02-26
PCT/JP2021/005940 WO2021172132A1 (ja) 2020-02-26 2021-02-17 レジスト組成物、及びレジスト組成物の使用方法

Publications (1)

Publication Number Publication Date
CN115151863A true CN115151863A (zh) 2022-10-04

Family

ID=77490973

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180016481.3A Pending CN115151863A (zh) 2020-02-26 2021-02-17 抗蚀剂组合物和抗蚀剂组合物的使用方法

Country Status (6)

Country Link
US (1) US20230096312A1 (https=)
JP (1) JPWO2021172132A1 (https=)
KR (1) KR20220147097A (https=)
CN (1) CN115151863A (https=)
TW (1) TWI853149B (https=)
WO (1) WO2021172132A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023008354A1 (ja) * 2021-07-30 2023-02-02 三菱瓦斯化学株式会社 レジスト組成物、及びそれを用いたレジスト膜形成方法
WO2025105354A1 (ja) * 2023-11-13 2025-05-22 三菱瓦斯化学株式会社 半導体製造用組成物

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102574963A (zh) * 2009-09-15 2012-07-11 三菱瓦斯化学株式会社 芳香族烃树脂和光刻用下层膜形成组合物
CN104536265A (zh) * 2014-12-31 2015-04-22 浙江永太科技股份有限公司 一种光刻胶组合物
CN106556971A (zh) * 2015-09-30 2017-04-05 罗门哈斯电子材料韩国有限公司 光致抗蚀剂组合物和方法
CN108137478A (zh) * 2015-09-10 2018-06-08 三菱瓦斯化学株式会社 化合物、树脂、抗蚀剂组合物或辐射敏感组合物、抗蚀图案形成方法、非晶膜的制造方法、光刻用下层膜形成材料、光刻用下层膜形成用组合物、电路图案的形成方法、以及纯化方法
WO2018151164A1 (ja) * 2017-02-20 2018-08-23 富士フイルム株式会社 薬液、薬液収容体、及び、パターン形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4743529A (en) * 1986-11-21 1988-05-10 Eastman Kodak Company Negative working photoresists responsive to shorter visible wavelengths and novel coated articles
JP3619261B2 (ja) * 1993-06-15 2005-02-09 三菱レイヨン株式会社 溶剤組成物
JP2002031899A (ja) * 2000-07-14 2002-01-31 Mitsubishi Gas Chem Co Inc レジスト洗浄剤組成物
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP2007148208A (ja) * 2005-11-30 2007-06-14 Sumitomo Chemical Co Ltd 感放射線性樹脂組成物
US20080187868A1 (en) * 2007-02-07 2008-08-07 Munirathna Padmanaban Photoactive Compounds
US20110039206A1 (en) * 2009-05-20 2011-02-17 Rohm And Haas Electronic Materials Llc Novel resins and photoresist compositions comprising same
IL213195A0 (en) * 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
EP2472320A2 (en) * 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Compositions comprising base-reactive component and processes for photolithography
JP6477270B2 (ja) * 2015-06-09 2019-03-06 信越化学工業株式会社 パターン形成方法
KR102051340B1 (ko) * 2015-09-30 2019-12-03 후지필름 가부시키가이샤 패턴 형성 방법, 전자 디바이스의 제조 방법, 및 적층체
KR20170060902A (ko) * 2015-11-25 2017-06-02 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물 및 이를 이용한 유기 절연막
US10831100B2 (en) * 2017-11-20 2020-11-10 Rohm And Haas Electronic Materials, Llc Iodine-containing photoacid generators and compositions comprising the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102574963A (zh) * 2009-09-15 2012-07-11 三菱瓦斯化学株式会社 芳香族烃树脂和光刻用下层膜形成组合物
CN104536265A (zh) * 2014-12-31 2015-04-22 浙江永太科技股份有限公司 一种光刻胶组合物
CN108137478A (zh) * 2015-09-10 2018-06-08 三菱瓦斯化学株式会社 化合物、树脂、抗蚀剂组合物或辐射敏感组合物、抗蚀图案形成方法、非晶膜的制造方法、光刻用下层膜形成材料、光刻用下层膜形成用组合物、电路图案的形成方法、以及纯化方法
CN106556971A (zh) * 2015-09-30 2017-04-05 罗门哈斯电子材料韩国有限公司 光致抗蚀剂组合物和方法
WO2018151164A1 (ja) * 2017-02-20 2018-08-23 富士フイルム株式会社 薬液、薬液収容体、及び、パターン形成方法

Also Published As

Publication number Publication date
KR20220147097A (ko) 2022-11-02
TWI853149B (zh) 2024-08-21
JPWO2021172132A1 (https=) 2021-09-02
US20230096312A1 (en) 2023-03-30
TW202138916A (zh) 2021-10-16
WO2021172132A1 (ja) 2021-09-02

Similar Documents

Publication Publication Date Title
JP7212449B2 (ja) 化合物及びその製造方法、並びに、組成物、光学部品形成用組成物、リソグラフィー用膜形成組成物、レジスト組成物、レジストパターンの形成方法、感放射線性組成物、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜の製造方法、レジストパターン形成方法、回路パターン形成方法、及び、精製方法
KR20240037877A (ko) 레지스트 조성물, 및 그것을 이용한 레지스트막 형성 방법
KR20180099681A (ko) 화합물, 수지, 조성물, 레지스트 패턴 형성방법, 및, 회로 패턴 형성방법
KR20190039990A (ko) 환경적으로 안정한 후막성 화학증폭형 레지스트
WO2019098338A1 (ja) リソグラフィー用膜形成用組成物、リソグラフィー用膜、レジストパターン形成方法、及び回路パターン形成方法
KR20170131636A (ko) 감방사선성 조성물, 아몰퍼스막 및 레지스트패턴 형성방법
KR20180034427A (ko) 신규 (메트)아크릴로일 화합물 및 그 제조방법
KR20170131668A (ko) 감방사선성 조성물
CN115151863A (zh) 抗蚀剂组合物和抗蚀剂组合物的使用方法
JP7216897B2 (ja) 化合物、樹脂、組成物、パターン形成方法及び精製方法
CN111630111A (zh) 组合物、以及抗蚀剂图案的形成方法和绝缘膜的形成方法
CN119422108A (zh) 抗蚀剂组合物和使用其的抗蚀剂膜形成方法
WO2023008355A1 (ja) レジスト補助膜組成物、及び該組成物を用いたパターンの形成方法
US6730769B2 (en) Novolak resin, production process thereof and positive photoresist composition using the novolak resin
TWI409586B (zh) 液晶元件製造用正型光阻組成物及光阻圖型之形成方法
CN117716290A (zh) 抗蚀剂组合物和使用该抗蚀剂组合物的抗蚀剂膜形成方法
JP5678747B2 (ja) Ｅｕｖ光露光用レジスト組成物並びにこれを用いたレジストパターン形成方法
CN117769684A (zh) 抗蚀剂辅助膜组合物和使用该组合物的图案形成方法
WO2024014330A1 (ja) レジスト補助膜組成物、及び該組成物を用いたパターンの形成方法
JP7145415B2 (ja) 化合物、樹脂、組成物、パターン形成方法及び精製方法
JP2000352823A (ja) ポジ型感放射線レジスト組成物およびこれを用いたレジストパターンの製造法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination