KR20200093702A - 기판을 처리하기 위한 방법 및 장치 - Google Patents

기판을 처리하기 위한 방법 및 장치 Download PDF

Info

Publication number
KR20200093702A
KR20200093702A KR1020207021970A KR20207021970A KR20200093702A KR 20200093702 A KR20200093702 A KR 20200093702A KR 1020207021970 A KR1020207021970 A KR 1020207021970A KR 20207021970 A KR20207021970 A KR 20207021970A KR 20200093702 A KR20200093702 A KR 20200093702A
Authority
KR
South Korea
Prior art keywords
substrate
gas
process chamber
back side
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020207021970A
Other languages
English (en)
Korean (ko)
Inventor
매튜 로저스
마틴 리플레이
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Priority to KR2020207000049U priority Critical patent/KR200496202Y1/ko
Publication of KR20200093702A publication Critical patent/KR20200093702A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020207021970A 2012-01-13 2013-01-10 기판을 처리하기 위한 방법 및 장치 Withdrawn KR20200093702A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2020207000049U KR200496202Y1 (ko) 2012-01-13 2013-01-10 기판을 처리하기 위한 방법 및 장치

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261586186P 2012-01-13 2012-01-13
US61/586,186 2012-01-13
US13/737,350 US8980767B2 (en) 2012-01-13 2013-01-09 Methods and apparatus for processing a substrate
US13/737,350 2013-01-09
PCT/US2013/021006 WO2013106552A1 (en) 2012-01-13 2013-01-10 Methods and apparatus for processing a substrate

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020147022262A Division KR20140121833A (ko) 2012-01-13 2013-01-10 기판을 처리하기 위한 방법 및 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR2020207000049U Division KR200496202Y1 (ko) 2012-01-13 2013-01-10 기판을 처리하기 위한 방법 및 장치

Publications (1)

Publication Number Publication Date
KR20200093702A true KR20200093702A (ko) 2020-08-05

Family

ID=48780267

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020147022262A Ceased KR20140121833A (ko) 2012-01-13 2013-01-10 기판을 처리하기 위한 방법 및 장치
KR2020207000049U Expired - Lifetime KR200496202Y1 (ko) 2012-01-13 2013-01-10 기판을 처리하기 위한 방법 및 장치
KR1020207021970A Withdrawn KR20200093702A (ko) 2012-01-13 2013-01-10 기판을 처리하기 위한 방법 및 장치

Family Applications Before (2)

Application Number Title Priority Date Filing Date
KR1020147022262A Ceased KR20140121833A (ko) 2012-01-13 2013-01-10 기판을 처리하기 위한 방법 및 장치
KR2020207000049U Expired - Lifetime KR200496202Y1 (ko) 2012-01-13 2013-01-10 기판을 처리하기 위한 방법 및 장치

Country Status (6)

Country Link
US (2) US8980767B2 (enExample)
JP (1) JP2015510260A (enExample)
KR (3) KR20140121833A (enExample)
CN (1) CN107464751B (enExample)
TW (1) TWI579922B (enExample)
WO (1) WO2013106552A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6065366B2 (ja) * 2012-01-30 2017-01-25 富士通セミコンダクター株式会社 半導体装置の製造方法
KR102535623B1 (ko) 2013-11-12 2023-05-26 어플라이드 머티어리얼스, 인코포레이티드 고온계 배경 제거
US9881788B2 (en) * 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
CN106298581B (zh) * 2015-05-13 2020-10-13 盛美半导体设备(上海)股份有限公司 光辐射加热刻蚀装置及方法
US10260149B2 (en) 2016-04-28 2019-04-16 Applied Materials, Inc. Side inject nozzle design for processing chamber
KR102528559B1 (ko) * 2016-07-26 2023-05-04 삼성전자주식회사 대면적 기판 제조 장치
US10851457B2 (en) 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
CN110119072B (zh) * 2018-02-06 2021-05-14 志圣科技（广州）有限公司 曝光组件及曝光装置
KR102695104B1 (ko) 2019-08-16 2024-08-14 램 리써치 코포레이션 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착 방법 및 장치
JP2023509451A (ja) 2020-01-03 2023-03-08 ラム リサーチ コーポレーション 裏面反り補償堆積のステーション間制御
WO2021154641A1 (en) 2020-01-30 2021-08-05 Lam Research Corporation Uv cure for local stress modulation
US12176242B2 (en) * 2022-01-21 2024-12-24 Applied Materials, Inc. Rotatable thermal processing chamber

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5267607A (en) * 1991-05-28 1993-12-07 Tokyo Electron Limited Substrate processing apparatus
US5660472A (en) * 1994-12-19 1997-08-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US6465043B1 (en) * 1996-02-09 2002-10-15 Applied Materials, Inc. Method and apparatus for reducing particle contamination in a substrate processing chamber
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5879128A (en) * 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US5920797A (en) * 1996-12-03 1999-07-06 Applied Materials, Inc. Method for gaseous substrate support
US6413871B2 (en) * 1999-06-22 2002-07-02 Applied Materials, Inc. Nitrogen treatment of polished halogen-doped silicon glass
US6803546B1 (en) * 1999-07-08 2004-10-12 Applied Materials, Inc. Thermally processing a substrate
US6375748B1 (en) * 1999-09-01 2002-04-23 Applied Materials, Inc. Method and apparatus for preventing edge deposition
JP2001102321A (ja) * 1999-09-17 2001-04-13 Applied Materials Inc 半導体製造装置における基板加熱方法及び半導体製造装置
EP1124252A2 (en) * 2000-02-10 2001-08-16 Applied Materials, Inc. Apparatus and process for processing substrates
JP2002057209A (ja) * 2000-06-01 2002-02-22 Tokyo Electron Ltd 枚葉式処理装置および枚葉式処理方法
JP2004503108A (ja) * 2000-07-06 2004-01-29 アプライド　マテリアルズ　インコーポレイテッド 半導体基板の熱処理
US6521292B1 (en) 2000-08-04 2003-02-18 Applied Materials, Inc. Substrate support including purge ring having inner edge aligned to wafer edge
JP3494435B2 (ja) * 2001-02-27 2004-02-09 東京エレクトロン株式会社 基板処理装置
JP2003077851A (ja) * 2001-08-28 2003-03-14 Applied Materials Inc 熱処理方法及び装置
US20040266123A1 (en) 2002-05-08 2004-12-30 Applied Materials, Inc. Electron beam treatment of SixNy films
JP4186536B2 (ja) * 2002-07-18 2008-11-26 松下電器産業株式会社 プラズマ処理装置
JP4765328B2 (ja) 2004-04-16 2011-09-07 東京エレクトロン株式会社 被処理体の処理装置
US7860379B2 (en) * 2007-01-15 2010-12-28 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
US8580078B2 (en) * 2007-01-26 2013-11-12 Lam Research Corporation Bevel etcher with vacuum chuck
US8057602B2 (en) * 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
US8051548B2 (en) 2007-09-06 2011-11-08 Creative Technology Corporation Method of manufacturing an electrostatic chuck
JP5226082B2 (ja) * 2007-12-20 2013-07-03 アプライド マテリアルズ インコーポレイテッド ガス流分布が改善された熱反応器
JP2009231401A (ja) 2008-03-21 2009-10-08 Tokyo Electron Ltd 載置台構造及び熱処理装置
US8249436B2 (en) * 2008-05-02 2012-08-21 Applied Materials, Inc. System for non radial temperature control for rotating substrates
US8254767B2 (en) * 2008-08-29 2012-08-28 Applied Materials, Inc. Method and apparatus for extended temperature pyrometry
TWM478017U (zh) * 2013-09-05 2014-05-11 Sankitai Co Ltd 料件回吹分離裝置

Also Published As

Publication number Publication date
KR20200001978U (ko) 2020-09-08
TWI579922B (zh) 2017-04-21
CN104025280A (zh) 2014-09-03
US20130183834A1 (en) 2013-07-18
CN107464751A (zh) 2017-12-12
US8980767B2 (en) 2015-03-17
JP2015510260A (ja) 2015-04-02
CN107464751B (zh) 2020-09-11
TW201335997A (zh) 2013-09-01
KR200496202Y1 (ko) 2022-11-29
US20150206721A1 (en) 2015-07-23
WO2013106552A1 (en) 2013-07-18
KR20140121833A (ko) 2014-10-16

Similar Documents

Publication Publication Date Title
KR200496202Y1 (ko) 기판을 처리하기 위한 방법 및 장치
CN103151290B (zh) 用以在处理腔室内支撑、定位及旋转基板的设备与方法
US9735009B2 (en) Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel
JP5077018B2 (ja) 熱処理装置
US7745762B2 (en) Optimizing the thermal budget during a pulsed heating process
US8821643B2 (en) In-situ chamber cleaning for an RTP chamber
KR20120084807A (ko) 방사성 가열된 기판들의 냉각을 개선하기 위한 장치 및 방법
US20060228818A1 (en) Edge temperature compensation in thermal processing particularly useful for SOI wafers
EP1886339A1 (en) Method and apparatus for hydrogenation of thin film silicon on glass
CN102473641B (zh) 热处理设备以及半导体装置制造方法
TWI492305B (zh) 製造半導體裝置之方法及設備
US8172950B2 (en) Substrate processing apparatus and semiconductor device producing method
CN104025280B (zh) 用于处理基板的方法和设备
JP2005259902A (ja) 基板処理装置
JP2005123284A (ja) 半導体製造装置
JP2007073865A (ja) 熱処理装置
WO2005017988A1 (ja) 基板処理装置および半導体デバイスの製造方法
JPH11140651A (ja) Ｃｖｄ装置およびｃｖｄ処理方法
JP2005197542A (ja) 基板処理装置
JP2006332705A (ja) 基板保持部及び熱処理装置
JP2013201333A (ja) 基板処理装置、半導体装置の製造方法及び基板処理方法
JP2006012985A (ja) 基板処理装置
JP2005012141A (ja) 基板処理装置
JP2005019832A (ja) 基板処理装置
AU2006254734A1 (en) Method and apparatus for hydrogenation of thin film silicon on glass

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20200728

Application number text: 1020147022262

Filing date: 20140808

PG1501 Laying open of application
PC1205 Withdrawal of application forming a basis of a converted application

Application number text: 1020147022262

Filing date: 20140808