CN107464751B - 用于处理基板的方法和设备 - Google Patents

用于处理基板的方法和设备 Download PDF

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Publication number
CN107464751B
CN107464751B CN201610946323.9A CN201610946323A CN107464751B CN 107464751 B CN107464751 B CN 107464751B CN 201610946323 A CN201610946323 A CN 201610946323A CN 107464751 B CN107464751 B CN 107464751B
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China
Prior art keywords
substrate
gas
processing
processing chamber
backside
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CN201610946323.9A
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Chinese (zh)
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CN107464751A (zh
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马修·罗杰斯
马丁·里普利
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from CN201380004591.3A external-priority patent/CN104025280B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
CN201610946323.9A 2012-01-13 2013-01-10 用于处理基板的方法和设备 Active CN107464751B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261586186P 2012-01-13 2012-01-13
US61/586,186 2012-01-13
US13/737,350 2013-01-09
US13/737,350 US8980767B2 (en) 2012-01-13 2013-01-09 Methods and apparatus for processing a substrate
CN201380004591.3A CN104025280B (zh) 2012-01-13 2013-01-10 用于处理基板的方法和设备

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201380004591.3A Division CN104025280B (zh) 2012-01-13 2013-01-10 用于处理基板的方法和设备

Publications (2)

Publication Number Publication Date
CN107464751A CN107464751A (zh) 2017-12-12
CN107464751B true CN107464751B (zh) 2020-09-11

Family

ID=48780267

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Application Number Title Priority Date Filing Date
CN201610946323.9A Active CN107464751B (zh) 2012-01-13 2013-01-10 用于处理基板的方法和设备

Country Status (6)

Country Link
US (2) US8980767B2 (enExample)
JP (1) JP2015510260A (enExample)
KR (3) KR20200093702A (enExample)
CN (1) CN107464751B (enExample)
TW (1) TWI579922B (enExample)
WO (1) WO2013106552A1 (enExample)

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JP6065366B2 (ja) * 2012-01-30 2017-01-25 富士通セミコンダクター株式会社 半導体装置の製造方法
WO2015073185A1 (en) * 2013-11-12 2015-05-21 Applied Materials, Inc. Pyrometer background elimination
US9881788B2 (en) * 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
CN106298581B (zh) * 2015-05-13 2020-10-13 盛美半导体设备(上海)股份有限公司 光辐射加热刻蚀装置及方法
US10260149B2 (en) * 2016-04-28 2019-04-16 Applied Materials, Inc. Side inject nozzle design for processing chamber
KR102528559B1 (ko) * 2016-07-26 2023-05-04 삼성전자주식회사 대면적 기판 제조 장치
US10851457B2 (en) 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
CN110119072B (zh) * 2018-02-06 2021-05-14 志圣科技（广州）有限公司 曝光组件及曝光装置
JP2022544221A (ja) 2019-08-16 2022-10-17 ラム リサーチ コーポレーション ウエハ内の様々な反りを補償するために空間を調整する堆積
JP2023509451A (ja) 2020-01-03 2023-03-08 ラム リサーチ コーポレーション 裏面反り補償堆積のステーション間制御
JP7645891B2 (ja) 2020-01-30 2025-03-14 ラム リサーチ コーポレーション 局所応力調整のためのｕｖ硬化
US12176242B2 (en) * 2022-01-21 2024-12-24 Applied Materials, Inc. Rotatable thermal processing chamber

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US5660472A (en) * 1994-12-19 1997-08-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US6465043B1 (en) * 1996-02-09 2002-10-15 Applied Materials, Inc. Method and apparatus for reducing particle contamination in a substrate processing chamber
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5879128A (en) * 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US5920797A (en) * 1996-12-03 1999-07-06 Applied Materials, Inc. Method for gaseous substrate support
US6413871B2 (en) * 1999-06-22 2002-07-02 Applied Materials, Inc. Nitrogen treatment of polished halogen-doped silicon glass
US6803546B1 (en) * 1999-07-08 2004-10-12 Applied Materials, Inc. Thermally processing a substrate
US6375748B1 (en) * 1999-09-01 2002-04-23 Applied Materials, Inc. Method and apparatus for preventing edge deposition
JP2001102321A (ja) * 1999-09-17 2001-04-13 Applied Materials Inc 半導体製造装置における基板加熱方法及び半導体製造装置
EP1124252A2 (en) * 2000-02-10 2001-08-16 Applied Materials, Inc. Apparatus and process for processing substrates
JP2002057209A (ja) * 2000-06-01 2002-02-22 Tokyo Electron Ltd 枚葉式処理装置および枚葉式処理方法
JP2004503108A (ja) * 2000-07-06 2004-01-29 アプライド　マテリアルズ　インコーポレイテッド 半導体基板の熱処理
US6521292B1 (en) 2000-08-04 2003-02-18 Applied Materials, Inc. Substrate support including purge ring having inner edge aligned to wafer edge
JP3494435B2 (ja) * 2001-02-27 2004-02-09 東京エレクトロン株式会社 基板処理装置
JP2003077851A (ja) * 2001-08-28 2003-03-14 Applied Materials Inc 熱処理方法及び装置
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Also Published As

Publication number Publication date
KR20200093702A (ko) 2020-08-05
TW201335997A (zh) 2013-09-01
US8980767B2 (en) 2015-03-17
KR20200001978U (ko) 2020-09-08
WO2013106552A1 (en) 2013-07-18
US20130183834A1 (en) 2013-07-18
JP2015510260A (ja) 2015-04-02
CN107464751A (zh) 2017-12-12
TWI579922B (zh) 2017-04-21
KR200496202Y1 (ko) 2022-11-29
US20150206721A1 (en) 2015-07-23
KR20140121833A (ko) 2014-10-16
CN104025280A (zh) 2014-09-03

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