TWI579922B - 用於處理基板的方法與裝置 - Google Patents
用於處理基板的方法與裝置 Download PDFInfo
- Publication number
- TWI579922B TWI579922B TW102100951A TW102100951A TWI579922B TW I579922 B TWI579922 B TW I579922B TW 102100951 A TW102100951 A TW 102100951A TW 102100951 A TW102100951 A TW 102100951A TW I579922 B TWI579922 B TW I579922B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- gas
- back side
- processing
- processing chamber
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 192
- 238000012545 processing Methods 0.000 title claims description 111
- 238000000034 method Methods 0.000 title claims description 59
- 239000007789 gas Substances 0.000 claims description 104
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 25
- 239000001301 oxygen Substances 0.000 claims description 25
- 229910052760 oxygen Inorganic materials 0.000 claims description 25
- 238000000137 annealing Methods 0.000 claims description 9
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000002829 reductive effect Effects 0.000 claims description 3
- 238000006073 displacement reaction Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 24
- 238000000859 sublimation Methods 0.000 description 15
- 230000008022 sublimation Effects 0.000 description 15
- 239000012530 fluid Substances 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 11
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000002528 anti-freeze Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000013529 heat transfer fluid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- -1 moisture Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261586186P | 2012-01-13 | 2012-01-13 | |
| US13/737,350 US8980767B2 (en) | 2012-01-13 | 2013-01-09 | Methods and apparatus for processing a substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201335997A TW201335997A (zh) | 2013-09-01 |
| TWI579922B true TWI579922B (zh) | 2017-04-21 |
Family
ID=48780267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102100951A TWI579922B (zh) | 2012-01-13 | 2013-01-10 | 用於處理基板的方法與裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8980767B2 (enExample) |
| JP (1) | JP2015510260A (enExample) |
| KR (3) | KR20200093702A (enExample) |
| CN (1) | CN107464751B (enExample) |
| TW (1) | TWI579922B (enExample) |
| WO (1) | WO2013106552A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6065366B2 (ja) * | 2012-01-30 | 2017-01-25 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| WO2015073185A1 (en) * | 2013-11-12 | 2015-05-21 | Applied Materials, Inc. | Pyrometer background elimination |
| US9881788B2 (en) * | 2014-05-22 | 2018-01-30 | Lam Research Corporation | Back side deposition apparatus and applications |
| CN106298581B (zh) * | 2015-05-13 | 2020-10-13 | 盛美半导体设备(上海)股份有限公司 | 光辐射加热刻蚀装置及方法 |
| US10260149B2 (en) * | 2016-04-28 | 2019-04-16 | Applied Materials, Inc. | Side inject nozzle design for processing chamber |
| KR102528559B1 (ko) * | 2016-07-26 | 2023-05-04 | 삼성전자주식회사 | 대면적 기판 제조 장치 |
| US10851457B2 (en) | 2017-08-31 | 2020-12-01 | Lam Research Corporation | PECVD deposition system for deposition on selective side of the substrate |
| CN110119072B (zh) * | 2018-02-06 | 2021-05-14 | 志圣科技（广州）有限公司 | 曝光组件及曝光装置 |
| JP2022544221A (ja) | 2019-08-16 | 2022-10-17 | ラム リサーチ コーポレーション | ウエハ内の様々な反りを補償するために空間を調整する堆積 |
| JP2023509451A (ja) | 2020-01-03 | 2023-03-08 | ラム リサーチ コーポレーション | 裏面反り補償堆積のステーション間制御 |
| JP7645891B2 (ja) | 2020-01-30 | 2025-03-14 | ラム リサーチ コーポレーション | 局所応力調整のためのｕｖ硬化 |
| US12176242B2 (en) * | 2022-01-21 | 2024-12-24 | Applied Materials, Inc. | Rotatable thermal processing chamber |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040266123A1 (en) * | 2002-05-08 | 2004-12-30 | Applied Materials, Inc. | Electron beam treatment of SixNy films |
| US20080179010A1 (en) * | 2007-01-26 | 2008-07-31 | Lam Research Corporation | Bevel etcher with vacuum chuck |
| US20080280453A1 (en) * | 2007-05-09 | 2008-11-13 | Applied Materials, Inc. | Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber |
| US20100254064A1 (en) * | 2007-09-06 | 2010-10-07 | Kinya Miyashita | Method for manufacturing gas supply structure in electrostatic chuck apparatus, gas supply structure in electrostatic chuck apparatus, and electrostatic chuck apparatus |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100188454B1 (ko) * | 1991-05-28 | 1999-06-01 | 이노우에 아키라 | 기판 처리 장치 |
| US5660472A (en) * | 1994-12-19 | 1997-08-26 | Applied Materials, Inc. | Method and apparatus for measuring substrate temperatures |
| US6465043B1 (en) * | 1996-02-09 | 2002-10-15 | Applied Materials, Inc. | Method and apparatus for reducing particle contamination in a substrate processing chamber |
| US5960555A (en) * | 1996-07-24 | 1999-10-05 | Applied Materials, Inc. | Method and apparatus for purging the back side of a substrate during chemical vapor processing |
| US5879128A (en) * | 1996-07-24 | 1999-03-09 | Applied Materials, Inc. | Lift pin and support pin apparatus for a processing chamber |
| US5920797A (en) * | 1996-12-03 | 1999-07-06 | Applied Materials, Inc. | Method for gaseous substrate support |
| US6413871B2 (en) * | 1999-06-22 | 2002-07-02 | Applied Materials, Inc. | Nitrogen treatment of polished halogen-doped silicon glass |
| US6803546B1 (en) * | 1999-07-08 | 2004-10-12 | Applied Materials, Inc. | Thermally processing a substrate |
| US6375748B1 (en) * | 1999-09-01 | 2002-04-23 | Applied Materials, Inc. | Method and apparatus for preventing edge deposition |
| JP2001102321A (ja) * | 1999-09-17 | 2001-04-13 | Applied Materials Inc | 半導体製造装置における基板加熱方法及び半導体製造装置 |
| EP1124252A2 (en) * | 2000-02-10 | 2001-08-16 | Applied Materials, Inc. | Apparatus and process for processing substrates |
| JP2002057209A (ja) * | 2000-06-01 | 2002-02-22 | Tokyo Electron Ltd | 枚葉式処理装置および枚葉式処理方法 |
| JP2004503108A (ja) * | 2000-07-06 | 2004-01-29 | アプライド マテリアルズ インコーポレイテッド | 半導体基板の熱処理 |
| US6521292B1 (en) | 2000-08-04 | 2003-02-18 | Applied Materials, Inc. | Substrate support including purge ring having inner edge aligned to wafer edge |
| JP3494435B2 (ja) * | 2001-02-27 | 2004-02-09 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP2003077851A (ja) * | 2001-08-28 | 2003-03-14 | Applied Materials Inc | 熱処理方法及び装置 |
| JP4186536B2 (ja) * | 2002-07-18 | 2008-11-26 | 松下電器産業株式会社 | プラズマ処理装置 |
| JP4765328B2 (ja) | 2004-04-16 | 2011-09-07 | 東京エレクトロン株式会社 | 被処理体の処理装置 |
| US7860379B2 (en) * | 2007-01-15 | 2010-12-28 | Applied Materials, Inc. | Temperature measurement and control of wafer support in thermal processing chamber |
| KR101586211B1 (ko) | 2007-12-20 | 2016-01-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 향상된 가스 유동 분포를 가진 열 반응기 |
| JP2009231401A (ja) * | 2008-03-21 | 2009-10-08 | Tokyo Electron Ltd | 載置台構造及び熱処理装置 |
| EP2289095B1 (en) * | 2008-05-02 | 2019-07-03 | Applied Materials, Inc. | System for non radial temperature control for rotating substrates |
| US8254767B2 (en) * | 2008-08-29 | 2012-08-28 | Applied Materials, Inc. | Method and apparatus for extended temperature pyrometry |
| TWM478017U (zh) * | 2013-09-05 | 2014-05-11 | Sankitai Co Ltd | 料件回吹分離裝置 |
-
2013
- 2013-01-09 US US13/737,350 patent/US8980767B2/en active Active
- 2013-01-10 KR KR1020207021970A patent/KR20200093702A/ko not_active Withdrawn
- 2013-01-10 TW TW102100951A patent/TWI579922B/zh active
- 2013-01-10 WO PCT/US2013/021006 patent/WO2013106552A1/en not_active Ceased
- 2013-01-10 CN CN201610946323.9A patent/CN107464751B/zh active Active
- 2013-01-10 KR KR1020147022262A patent/KR20140121833A/ko not_active Ceased
- 2013-01-10 KR KR2020207000049U patent/KR200496202Y1/ko not_active Expired - Lifetime
- 2013-01-10 JP JP2014552295A patent/JP2015510260A/ja active Pending
-
2015
- 2015-03-16 US US14/658,732 patent/US20150206721A1/en not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040266123A1 (en) * | 2002-05-08 | 2004-12-30 | Applied Materials, Inc. | Electron beam treatment of SixNy films |
| US20080179010A1 (en) * | 2007-01-26 | 2008-07-31 | Lam Research Corporation | Bevel etcher with vacuum chuck |
| US20080280453A1 (en) * | 2007-05-09 | 2008-11-13 | Applied Materials, Inc. | Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber |
| US20100254064A1 (en) * | 2007-09-06 | 2010-10-07 | Kinya Miyashita | Method for manufacturing gas supply structure in electrostatic chuck apparatus, gas supply structure in electrostatic chuck apparatus, and electrostatic chuck apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200093702A (ko) | 2020-08-05 |
| TW201335997A (zh) | 2013-09-01 |
| US8980767B2 (en) | 2015-03-17 |
| KR20200001978U (ko) | 2020-09-08 |
| WO2013106552A1 (en) | 2013-07-18 |
| US20130183834A1 (en) | 2013-07-18 |
| JP2015510260A (ja) | 2015-04-02 |
| CN107464751A (zh) | 2017-12-12 |
| CN107464751B (zh) | 2020-09-11 |
| KR200496202Y1 (ko) | 2022-11-29 |
| US20150206721A1 (en) | 2015-07-23 |
| KR20140121833A (ko) | 2014-10-16 |
| CN104025280A (zh) | 2014-09-03 |
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